Patent
US 10,184,175METHOD FOR SYNTHESIZING MULTILAYER GRAPHENE
Moon-Ho HAM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,184,175Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a multilayer graphene, comprising: forming a catalytic metal layer on a substrate; forming a pattern of asperities on a surface of the catalytic metal layer by subjecting the catalytic metal layer to a heat treatment by supplying methane gas,, wherein the pattern of asperities formed on the surface of the catalytic metal layer acts as a seed capable of growing the multilayer graphene; and depositing the multilayer graphene onto the surface of the catalytic metal layer having the pattern of asperities, comprising heat treating the catalytic metal layer in a gas comprising, a carbon source, hydrogen and argon for a time according to a number of layer of the multilayer graphene to be formed. Currently amended
The method for synthesizing a multilayer graphene according to claim 1, wherein the catalytic metal layer includes one or more selected from the group consisting of copper (Cu), nickel (Ni), iron (Fe), platinum (Pt), aluminum (Al), cobalt (Co), ruthenium (Ru), palladium (Pd), chromium (Cr), magnesium (Mg), manganese (Mn), gold (Au), silver (Ag), molybdenum (Mo), rhodium (Rh), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), zirconium (Zr), and iridium (Ir), brass, bronze, and stainless steel. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein the step of forming a catalytic metal layer on a substrate is performed using one or more methods selected from the group consisting of an electron-beam evaporation deposition method, a thermal evaporation deposition method, a laser molecular beam epitaxy (L- M BE), a pulsed laser deposition (PLD), an electro-plating method and a sputtering method. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein subjecting the catalytic metal layer to the heat treatment comprises heating the substrate at a temperature ranging from 800 0 C to 1100 0 C for 10 to 120 minutes. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein depositing the multilayer graphene onto the surface of the catalytic metal layer comprises: supplying a reaction gas comprising a carbon source onto the surface having the pattern of asperities of the catalytic metal layer to form the multilayer graphene; causing the deposition of the multilayer graphene on the surface of the catalytic metal at a temperature ranging from a room temperature to 1200 0 C; and cooling the multilayer graphene. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein, in the stage of synthesizing the multilayer graphene, the number of layer of the multilayer graphene is controlled by changing the synthesis time of the multilayer graphene. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein depositing the multilayer graphene onto the surface of the catalytic metal layer comprises performing deposition of the multilayer graphene for a time ranging from 10 minutes to 20 minutes, and wherein the multilayer graphene is a bilayer
The method according to claim 1, wherein comprises forming the catalytic metal layer directly Previously presented
The method according to claim 1, wherein the metal selected from the group consisting of aluminum chromium (Cr), magnesium (Mg), manganese (Mn), tantalum (Ta), titanium (Ti), tungsten (W), uranium iridium (Ir). Previously presented
Canceled graphene. Previously presented forming the catalytic metal layer on the substrate on a substrate of an electronic device. catalytic metal layer comprises at least one (Al), ruthenium (Ru), palladium (Pd), silver (Ag), molybdenum (Mo), rhodium (Rh), (U), vanadium (V), zirconium (Zr), and
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
Multilayer graphene synthesized on a catalytic metal layer. The catalytic metal layer was pre-heat-treated with methane gas to form a pattern of asperities as seeds for multilayer graphene growth. Graphene was then deposited by CVD with varying synthesis times to control the number of graphene layers. Results were characterized by SEM, optical microscopy, digital camera, Raman spectroscopy, Raman mapping, TEM, and sheet resistance measurements. Bilayer graphene was formed at 20 minutes synthesis time.
Materials described outside the worked examples.
catalytic metal layer
carbon source (various)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–20 minutes | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,184,175Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a multilayer graphene, comprising: forming a catalytic metal layer on a substrate; forming a pattern of asperities on a surface of the catalytic metal layer by subjecting the catalytic metal layer to a heat treatment by supplying methane gas,, wherein the pattern of asperities formed on the surface of the catalytic metal layer acts as a seed capable of growing the multilayer graphene; and depositing the multilayer graphene onto the surface of the catalytic metal layer having the pattern of asperities, comprising heat treating the catalytic metal layer in a gas comprising, a carbon source, hydrogen and argon for a time according to a number of layer of the multilayer graphene to be formed. Currently amended
The method for synthesizing a multilayer graphene according to claim 1, wherein the catalytic metal layer includes one or more selected from the group consisting of copper (Cu), nickel (Ni), iron (Fe), platinum (Pt), aluminum (Al), cobalt (Co), ruthenium (Ru), palladium (Pd), chromium (Cr), magnesium (Mg), manganese (Mn), gold (Au), silver (Ag), molybdenum (Mo), rhodium (Rh), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), zirconium (Zr), and iridium (Ir), brass, bronze, and stainless steel. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein the step of forming a catalytic metal layer on a substrate is performed using one or more methods selected from the group consisting of an electron-beam evaporation deposition method, a thermal evaporation deposition method, a laser molecular beam epitaxy (L- M BE), a pulsed laser deposition (PLD), an electro-plating method and a sputtering method. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein subjecting the catalytic metal layer to the heat treatment comprises heating the substrate at a temperature ranging from 800 0 C to 1100 0 C for 10 to 120 minutes. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein depositing the multilayer graphene onto the surface of the catalytic metal layer comprises: supplying a reaction gas comprising a carbon source onto the surface having the pattern of asperities of the catalytic metal layer to form the multilayer graphene; causing the deposition of the multilayer graphene on the surface of the catalytic metal at a temperature ranging from a room temperature to 1200 0 C; and cooling the multilayer graphene. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein, in the stage of synthesizing the multilayer graphene, the number of layer of the multilayer graphene is controlled by changing the synthesis time of the multilayer graphene. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein depositing the multilayer graphene onto the surface of the catalytic metal layer comprises performing deposition of the multilayer graphene for a time ranging from 10 minutes to 20 minutes, and wherein the multilayer graphene is a bilayer
The method according to claim 1, wherein comprises forming the catalytic metal layer directly Previously presented
The method according to claim 1, wherein the metal selected from the group consisting of aluminum chromium (Cr), magnesium (Mg), manganese (Mn), tantalum (Ta), titanium (Ti), tungsten (W), uranium iridium (Ir). Previously presented
Canceled graphene. Previously presented forming the catalytic metal layer on the substrate on a substrate of an electronic device. catalytic metal layer comprises at least one (Al), ruthenium (Ru), palladium (Pd), silver (Ag), molybdenum (Mo), rhodium (Rh), (U), vanadium (V), zirconium (Zr), and
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
Multilayer graphene synthesized on a catalytic metal layer. The catalytic metal layer was pre-heat-treated with methane gas to form a pattern of asperities as seeds for multilayer graphene growth. Graphene was then deposited by CVD with varying synthesis times to control the number of graphene layers. Results were characterized by SEM, optical microscopy, digital camera, Raman spectroscopy, Raman mapping, TEM, and sheet resistance measurements. Bilayer graphene was formed at 20 minutes synthesis time.
Materials described outside the worked examples.
catalytic metal layer
carbon source (various)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–20 minutes | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,184,175Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a multilayer graphene, comprising: forming a catalytic metal layer on a substrate; forming a pattern of asperities on a surface of the catalytic metal layer by subjecting the catalytic metal layer to a heat treatment by supplying methane gas,, wherein the pattern of asperities formed on the surface of the catalytic metal layer acts as a seed capable of growing the multilayer graphene; and depositing the multilayer graphene onto the surface of the catalytic metal layer having the pattern of asperities, comprising heat treating the catalytic metal layer in a gas comprising, a carbon source, hydrogen and argon for a time according to a number of layer of the multilayer graphene to be formed. Currently amended
The method for synthesizing a multilayer graphene according to claim 1, wherein the catalytic metal layer includes one or more selected from the group consisting of copper (Cu), nickel (Ni), iron (Fe), platinum (Pt), aluminum (Al), cobalt (Co), ruthenium (Ru), palladium (Pd), chromium (Cr), magnesium (Mg), manganese (Mn), gold (Au), silver (Ag), molybdenum (Mo), rhodium (Rh), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), zirconium (Zr), and iridium (Ir), brass, bronze, and stainless steel. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein the step of forming a catalytic metal layer on a substrate is performed using one or more methods selected from the group consisting of an electron-beam evaporation deposition method, a thermal evaporation deposition method, a laser molecular beam epitaxy (L- M BE), a pulsed laser deposition (PLD), an electro-plating method and a sputtering method. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein subjecting the catalytic metal layer to the heat treatment comprises heating the substrate at a temperature ranging from 800 0 C to 1100 0 C for 10 to 120 minutes. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein depositing the multilayer graphene onto the surface of the catalytic metal layer comprises: supplying a reaction gas comprising a carbon source onto the surface having the pattern of asperities of the catalytic metal layer to form the multilayer graphene; causing the deposition of the multilayer graphene on the surface of the catalytic metal at a temperature ranging from a room temperature to 1200 0 C; and cooling the multilayer graphene. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein, in the stage of synthesizing the multilayer graphene, the number of layer of the multilayer graphene is controlled by changing the synthesis time of the multilayer graphene. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein depositing the multilayer graphene onto the surface of the catalytic metal layer comprises performing deposition of the multilayer graphene for a time ranging from 10 minutes to 20 minutes, and wherein the multilayer graphene is a bilayer
The method according to claim 1, wherein comprises forming the catalytic metal layer directly Previously presented
The method according to claim 1, wherein the metal selected from the group consisting of aluminum chromium (Cr), magnesium (Mg), manganese (Mn), tantalum (Ta), titanium (Ti), tungsten (W), uranium iridium (Ir). Previously presented
Canceled graphene. Previously presented forming the catalytic metal layer on the substrate on a substrate of an electronic device. catalytic metal layer comprises at least one (Al), ruthenium (Ru), palladium (Pd), silver (Ag), molybdenum (Mo), rhodium (Rh), (U), vanadium (V), zirconium (Zr), and
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
Multilayer graphene synthesized on a catalytic metal layer. The catalytic metal layer was pre-heat-treated with methane gas to form a pattern of asperities as seeds for multilayer graphene growth. Graphene was then deposited by CVD with varying synthesis times to control the number of graphene layers. Results were characterized by SEM, optical microscopy, digital camera, Raman spectroscopy, Raman mapping, TEM, and sheet resistance measurements. Bilayer graphene was formed at 20 minutes synthesis time.
Materials described outside the worked examples.
catalytic metal layer
carbon source (various)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–20 minutes | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,184,175Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a multilayer graphene, comprising: forming a catalytic metal layer on a substrate; forming a pattern of asperities on a surface of the catalytic metal layer by subjecting the catalytic metal layer to a heat treatment by supplying methane gas,, wherein the pattern of asperities formed on the surface of the catalytic metal layer acts as a seed capable of growing the multilayer graphene; and depositing the multilayer graphene onto the surface of the catalytic metal layer having the pattern of asperities, comprising heat treating the catalytic metal layer in a gas comprising, a carbon source, hydrogen and argon for a time according to a number of layer of the multilayer graphene to be formed. Currently amended
The method for synthesizing a multilayer graphene according to claim 1, wherein the catalytic metal layer includes one or more selected from the group consisting of copper (Cu), nickel (Ni), iron (Fe), platinum (Pt), aluminum (Al), cobalt (Co), ruthenium (Ru), palladium (Pd), chromium (Cr), magnesium (Mg), manganese (Mn), gold (Au), silver (Ag), molybdenum (Mo), rhodium (Rh), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), zirconium (Zr), and iridium (Ir), brass, bronze, and stainless steel. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein the step of forming a catalytic metal layer on a substrate is performed using one or more methods selected from the group consisting of an electron-beam evaporation deposition method, a thermal evaporation deposition method, a laser molecular beam epitaxy (L- M BE), a pulsed laser deposition (PLD), an electro-plating method and a sputtering method. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein subjecting the catalytic metal layer to the heat treatment comprises heating the substrate at a temperature ranging from 800 0 C to 1100 0 C for 10 to 120 minutes. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein depositing the multilayer graphene onto the surface of the catalytic metal layer comprises: supplying a reaction gas comprising a carbon source onto the surface having the pattern of asperities of the catalytic metal layer to form the multilayer graphene; causing the deposition of the multilayer graphene on the surface of the catalytic metal at a temperature ranging from a room temperature to 1200 0 C; and cooling the multilayer graphene. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein, in the stage of synthesizing the multilayer graphene, the number of layer of the multilayer graphene is controlled by changing the synthesis time of the multilayer graphene. Previously presented
The method for synthesizing a multilayer graphene according to claim 1, wherein depositing the multilayer graphene onto the surface of the catalytic metal layer comprises performing deposition of the multilayer graphene for a time ranging from 10 minutes to 20 minutes, and wherein the multilayer graphene is a bilayer
The method according to claim 1, wherein comprises forming the catalytic metal layer directly Previously presented
The method according to claim 1, wherein the metal selected from the group consisting of aluminum chromium (Cr), magnesium (Mg), manganese (Mn), tantalum (Ta), titanium (Ti), tungsten (W), uranium iridium (Ir). Previously presented
Canceled graphene. Previously presented forming the catalytic metal layer on the substrate on a substrate of an electronic device. catalytic metal layer comprises at least one (Al), ruthenium (Ru), palladium (Pd), silver (Ag), molybdenum (Mo), rhodium (Rh), (U), vanadium (V), zirconium (Zr), and
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
Multilayer graphene synthesized on a catalytic metal layer. The catalytic metal layer was pre-heat-treated with methane gas to form a pattern of asperities as seeds for multilayer graphene growth. Graphene was then deposited by CVD with varying synthesis times to control the number of graphene layers. Results were characterized by SEM, optical microscopy, digital camera, Raman spectroscopy, Raman mapping, TEM, and sheet resistance measurements. Bilayer graphene was formed at 20 minutes synthesis time.
Materials described outside the worked examples.
catalytic metal layer
carbon source (various)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 10–20 minutes | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
bilayer graphene
| — |
SEMICONDUCTOR DEVICE INCLUDING CATALYST LAYER AND GRAPHENE LAYER THEREON AND METHOD FOR MANUFACTURING THE SAME
bilayer graphene
| — |
SEMICONDUCTOR DEVICE INCLUDING CATALYST LAYER AND GRAPHENE LAYER THEREON AND METHOD FOR MANUFACTURING THE SAME
bilayer graphene
| — |
SEMICONDUCTOR DEVICE INCLUDING CATALYST LAYER AND GRAPHENE LAYER THEREON AND METHOD FOR MANUFACTURING THE SAME
bilayer graphene
| — |
SEMICONDUCTOR DEVICE INCLUDING CATALYST LAYER AND GRAPHENE LAYER THEREON AND METHOD FOR MANUFACTURING THE SAME