Patent
US 9,825,182METHOD OF INTERCALATING INSULATING LAYER BETWEEN METAL AND GRAPHENE LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE INTERCALATION METHOD
Insu JEON
US
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Patent
Atlas literature
Patent
US 9,825,182Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 F are cross-sectional views for explaining a process of intercalating an insulating layer between a metal substrate and a graphene layer, …
FIGS. 2A and 2B are cross-sectional views for explaining a process of additionally forming an insulating layer on the graphene layer after the insulating layer …
FIGS. 3A through 3 C are cross-sectional views for explaining a process of additionally intercalating the insulating layer between the metal substrate and the …
FIGS. 4A through 4 C are cross-sectional views for explaining a process of intercalating the insulating layer between the metal substrate and the graphene …
FIGS. 5A through 5 C are cross-sectional views for explaining a process of further intercalating an additional insulating layer between the metal substrate and …
FIGS. 6A through 6 C are cross-sectional views for explaining a process of further intercalating the additional insulating layer between the metal substrate …
FIG. 7 is a cross- sectional view illustrating a structure of a transistor that is fabricated by using a stacked structure that is formed by using a method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: growing a graphene layer on a metal layer; depositing a first material on a surface of the graphene layer; intercalating the first material between the graphene layer and the metal layer by heating the first material at a first pressure and a first temperature; depositing a second material over the surface of the graphene layer; and intercalating the second material between the graphene layer and the metal layer by heating the second material at a second pressure different from the first pressure and a second temperature different from the first temperature to fo rm a first insulating layer between the metal layer and the graphene layer, the first material and the second material being chemically bonded to each other, wherein the first pressure is lower than the second pressure, and the first temperature is higher than the second temperature.
The method of claim 1, wherein the depositing a first material deposits the first material including at least one of silicon (Si), aluminum (A l), hafnium (Hf), zirconium (Zr), and lanthanum (La).
The method of claim 1, wherein Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 3 the depositing a second material deposits the second material including at least one of oxygen (O) and nitrogen (N), and the intercalating the second material forms the first insulating layer including one of an oxide insulator and a nitride insulator.
The method of claim 1, wherein the intercalating the first material and the intercalating the second material are sequentially and repeatedly performed. Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 4
The method of claim 1, wherein the intercalating the second material is continuously and repeatedly performed at least twice after the intercalating the first material is continuously and repeatedly perfor ni ed at least twice.
The method of claim 1, wherein after the intercalating the first material, the method further comprising: depositing a third material on the surface of the graphene layer, the third material being different from the first material and the second material; intercalating the third material between the graphene layer and the metal layer by heating the third material at the first pressure and the first temperature after the intercalating the first material prior to the intercalating the second material; and for u ing a second insulating layer between the metal layer and the graphene layer after the intercalating the second material, the third material and the second material being chemically bonded to each other.
The method of claim 1, after the intercalating the second material, the method further comprising: depositing a third material, on the surface of the graphene layer, the third material being different from the first material and the second material; and Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 5 intercalating the third material between the graphene layer and the metal layer by heating the third material at the first pressure and the first temperature to form a second insulating layer between the metal layer and the graphene layer, the third material and the second material being chemically bonded to each other.
The method of claim 1, further comprising: patterning the graphene layer after the growing.
The method of claim 1, wherein the metal layer includes at least one of copper (Cu), nickel (Ni), platinum (Pt), cobalt (Co), ruthenium (Ru), aluminum (A l), iron (Fe), gold (Au), magnesium (Mg), chromium (Cr), manganese (Mn), rhodium (Rh), tantalum (Ta), titanium (Ti), iridium (Ir), uranium (U), vanadium (V), and tungsten (W).
canceled
The method of claim [[5]] SVG 15051270.04-26-2017.J₂₉₁RLAKRXEAPX0.CLM.2.12.1716.1693.1758.1734.svg 0.137 0.14 Chemistry Black and white wherein the first pressure is equal to or lower than 10-9 torr and the first temperature ranges from about 500 * C to about 550 *C, and the second pressure ranges from 2x 10-7 torr to 8x 10- 7 torr and the second temperature ranges from about 340 ° C to about 400 *C.
A method of fabricating a transistor, the method comprising: growing a graphene layer on a metal layer; patterning the graphene layer; depositing a first material on a surface of the graphene layer; intercalating the first material between the graphene layer and the metal layer by heating the first material at a first pressure and a first temperature; depositing a second material over the surface of the graphene layer; Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 6 intercalating the second material between the graphene layer and the metal layer by heating the second material at a second pressure different from the first pressure and a second temperature different from the first temperature to form an insulating layer between the metal layer and the graphene layer, the first material and the second material being chemically bonded to each other; and for m ing a first electrode contacting one side of the graphene layer and a second electrode contacting another side of the graphene layer s wherein the first pressure is lower than the second pressure, and the first temperature is higher than the second temperature.
The method of claim 14, wherein the depositing a first material deposits the first material including at least one of silicon (Si), aluminum (Al), hafnium (Hf), zirconium (Zr), and lanthanum (La).
The method of claim 14, wherein the depositing a second material deposits the second material including at least one of oxygen (O) and nitrogen (N), and the intercalating the second material forms the insulating layer including one of an oxide insulator and a nitride insulator.
canceled
The method of claim [[17]] SVG 15051270.04-26-2017.J₂₉₁RLAKRXEAPX0.CLM.5.22.1747.2874.1819.2915.svg 0.137 0.24 Chemistry Black and white wherein Attorney Docket No: 2557SI-002364-US U. S. Patent Application No.: 15/051, 270 Page 7 the first pressure is equal to or lower than 10- 9 torr and the first temperature ranges from about 500 * C to about 550 0C, and the second pressure ranges from 2x 10- 7 to rr to 8x 10- 7 torr and the second temperature ranges from about 340 *C to about 400 *C.
A stacked structure comprising: a crystalline insulating layer on a metal layer, the crystalline insulating layer including a first material and a second material different from the first material, the first material and the second material being chemically bonded to each other, the second material including at least one of oxygen (O) and insulating layer. withdrawn
The stacked structure of claim 19, further layer and the insulating layer, the compound layer material and a metal of the metal layer. *** END nitrogen (N); and a graphene layer on the comprising: a compound layer between the metal including a reaction product of the first CLAIM LISTING *** withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
stacked structure with intercalated insulating layer
graphene transistor
Materials described outside the worked examples.
graphene layer
metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a cross- sectional view illustrating a structure of a transistor that is fabricated by using a stacked structure that is formed by using a method of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0–9 torr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,825,182Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 F are cross-sectional views for explaining a process of intercalating an insulating layer between a metal substrate and a graphene layer, …
FIGS. 2A and 2B are cross-sectional views for explaining a process of additionally forming an insulating layer on the graphene layer after the insulating layer …
FIGS. 3A through 3 C are cross-sectional views for explaining a process of additionally intercalating the insulating layer between the metal substrate and the …
FIGS. 4A through 4 C are cross-sectional views for explaining a process of intercalating the insulating layer between the metal substrate and the graphene …
FIGS. 5A through 5 C are cross-sectional views for explaining a process of further intercalating an additional insulating layer between the metal substrate and …
FIGS. 6A through 6 C are cross-sectional views for explaining a process of further intercalating the additional insulating layer between the metal substrate …
FIG. 7 is a cross- sectional view illustrating a structure of a transistor that is fabricated by using a stacked structure that is formed by using a method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: growing a graphene layer on a metal layer; depositing a first material on a surface of the graphene layer; intercalating the first material between the graphene layer and the metal layer by heating the first material at a first pressure and a first temperature; depositing a second material over the surface of the graphene layer; and intercalating the second material between the graphene layer and the metal layer by heating the second material at a second pressure different from the first pressure and a second temperature different from the first temperature to fo rm a first insulating layer between the metal layer and the graphene layer, the first material and the second material being chemically bonded to each other, wherein the first pressure is lower than the second pressure, and the first temperature is higher than the second temperature.
The method of claim 1, wherein the depositing a first material deposits the first material including at least one of silicon (Si), aluminum (A l), hafnium (Hf), zirconium (Zr), and lanthanum (La).
The method of claim 1, wherein Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 3 the depositing a second material deposits the second material including at least one of oxygen (O) and nitrogen (N), and the intercalating the second material forms the first insulating layer including one of an oxide insulator and a nitride insulator.
The method of claim 1, wherein the intercalating the first material and the intercalating the second material are sequentially and repeatedly performed. Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 4
The method of claim 1, wherein the intercalating the second material is continuously and repeatedly performed at least twice after the intercalating the first material is continuously and repeatedly perfor ni ed at least twice.
The method of claim 1, wherein after the intercalating the first material, the method further comprising: depositing a third material on the surface of the graphene layer, the third material being different from the first material and the second material; intercalating the third material between the graphene layer and the metal layer by heating the third material at the first pressure and the first temperature after the intercalating the first material prior to the intercalating the second material; and for u ing a second insulating layer between the metal layer and the graphene layer after the intercalating the second material, the third material and the second material being chemically bonded to each other.
The method of claim 1, after the intercalating the second material, the method further comprising: depositing a third material, on the surface of the graphene layer, the third material being different from the first material and the second material; and Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 5 intercalating the third material between the graphene layer and the metal layer by heating the third material at the first pressure and the first temperature to form a second insulating layer between the metal layer and the graphene layer, the third material and the second material being chemically bonded to each other.
The method of claim 1, further comprising: patterning the graphene layer after the growing.
The method of claim 1, wherein the metal layer includes at least one of copper (Cu), nickel (Ni), platinum (Pt), cobalt (Co), ruthenium (Ru), aluminum (A l), iron (Fe), gold (Au), magnesium (Mg), chromium (Cr), manganese (Mn), rhodium (Rh), tantalum (Ta), titanium (Ti), iridium (Ir), uranium (U), vanadium (V), and tungsten (W).
canceled
The method of claim [[5]] SVG 15051270.04-26-2017.J₂₉₁RLAKRXEAPX0.CLM.2.12.1716.1693.1758.1734.svg 0.137 0.14 Chemistry Black and white wherein the first pressure is equal to or lower than 10-9 torr and the first temperature ranges from about 500 * C to about 550 *C, and the second pressure ranges from 2x 10-7 torr to 8x 10- 7 torr and the second temperature ranges from about 340 ° C to about 400 *C.
A method of fabricating a transistor, the method comprising: growing a graphene layer on a metal layer; patterning the graphene layer; depositing a first material on a surface of the graphene layer; intercalating the first material between the graphene layer and the metal layer by heating the first material at a first pressure and a first temperature; depositing a second material over the surface of the graphene layer; Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 6 intercalating the second material between the graphene layer and the metal layer by heating the second material at a second pressure different from the first pressure and a second temperature different from the first temperature to form an insulating layer between the metal layer and the graphene layer, the first material and the second material being chemically bonded to each other; and for m ing a first electrode contacting one side of the graphene layer and a second electrode contacting another side of the graphene layer s wherein the first pressure is lower than the second pressure, and the first temperature is higher than the second temperature.
The method of claim 14, wherein the depositing a first material deposits the first material including at least one of silicon (Si), aluminum (Al), hafnium (Hf), zirconium (Zr), and lanthanum (La).
The method of claim 14, wherein the depositing a second material deposits the second material including at least one of oxygen (O) and nitrogen (N), and the intercalating the second material forms the insulating layer including one of an oxide insulator and a nitride insulator.
canceled
The method of claim [[17]] SVG 15051270.04-26-2017.J₂₉₁RLAKRXEAPX0.CLM.5.22.1747.2874.1819.2915.svg 0.137 0.24 Chemistry Black and white wherein Attorney Docket No: 2557SI-002364-US U. S. Patent Application No.: 15/051, 270 Page 7 the first pressure is equal to or lower than 10- 9 torr and the first temperature ranges from about 500 * C to about 550 0C, and the second pressure ranges from 2x 10- 7 to rr to 8x 10- 7 torr and the second temperature ranges from about 340 *C to about 400 *C.
A stacked structure comprising: a crystalline insulating layer on a metal layer, the crystalline insulating layer including a first material and a second material different from the first material, the first material and the second material being chemically bonded to each other, the second material including at least one of oxygen (O) and insulating layer. withdrawn
The stacked structure of claim 19, further layer and the insulating layer, the compound layer material and a metal of the metal layer. *** END nitrogen (N); and a graphene layer on the comprising: a compound layer between the metal including a reaction product of the first CLAIM LISTING *** withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
stacked structure with intercalated insulating layer
graphene transistor
Materials described outside the worked examples.
graphene layer
metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a cross- sectional view illustrating a structure of a transistor that is fabricated by using a stacked structure that is formed by using a method of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0–9 torr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,825,182Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 F are cross-sectional views for explaining a process of intercalating an insulating layer between a metal substrate and a graphene layer, …
FIGS. 2A and 2B are cross-sectional views for explaining a process of additionally forming an insulating layer on the graphene layer after the insulating layer …
FIGS. 3A through 3 C are cross-sectional views for explaining a process of additionally intercalating the insulating layer between the metal substrate and the …
FIGS. 4A through 4 C are cross-sectional views for explaining a process of intercalating the insulating layer between the metal substrate and the graphene …
FIGS. 5A through 5 C are cross-sectional views for explaining a process of further intercalating an additional insulating layer between the metal substrate and …
FIGS. 6A through 6 C are cross-sectional views for explaining a process of further intercalating the additional insulating layer between the metal substrate …
FIG. 7 is a cross- sectional view illustrating a structure of a transistor that is fabricated by using a stacked structure that is formed by using a method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: growing a graphene layer on a metal layer; depositing a first material on a surface of the graphene layer; intercalating the first material between the graphene layer and the metal layer by heating the first material at a first pressure and a first temperature; depositing a second material over the surface of the graphene layer; and intercalating the second material between the graphene layer and the metal layer by heating the second material at a second pressure different from the first pressure and a second temperature different from the first temperature to fo rm a first insulating layer between the metal layer and the graphene layer, the first material and the second material being chemically bonded to each other, wherein the first pressure is lower than the second pressure, and the first temperature is higher than the second temperature.
The method of claim 1, wherein the depositing a first material deposits the first material including at least one of silicon (Si), aluminum (A l), hafnium (Hf), zirconium (Zr), and lanthanum (La).
The method of claim 1, wherein Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 3 the depositing a second material deposits the second material including at least one of oxygen (O) and nitrogen (N), and the intercalating the second material forms the first insulating layer including one of an oxide insulator and a nitride insulator.
The method of claim 1, wherein the intercalating the first material and the intercalating the second material are sequentially and repeatedly performed. Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 4
The method of claim 1, wherein the intercalating the second material is continuously and repeatedly performed at least twice after the intercalating the first material is continuously and repeatedly perfor ni ed at least twice.
The method of claim 1, wherein after the intercalating the first material, the method further comprising: depositing a third material on the surface of the graphene layer, the third material being different from the first material and the second material; intercalating the third material between the graphene layer and the metal layer by heating the third material at the first pressure and the first temperature after the intercalating the first material prior to the intercalating the second material; and for u ing a second insulating layer between the metal layer and the graphene layer after the intercalating the second material, the third material and the second material being chemically bonded to each other.
The method of claim 1, after the intercalating the second material, the method further comprising: depositing a third material, on the surface of the graphene layer, the third material being different from the first material and the second material; and Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 5 intercalating the third material between the graphene layer and the metal layer by heating the third material at the first pressure and the first temperature to form a second insulating layer between the metal layer and the graphene layer, the third material and the second material being chemically bonded to each other.
The method of claim 1, further comprising: patterning the graphene layer after the growing.
The method of claim 1, wherein the metal layer includes at least one of copper (Cu), nickel (Ni), platinum (Pt), cobalt (Co), ruthenium (Ru), aluminum (A l), iron (Fe), gold (Au), magnesium (Mg), chromium (Cr), manganese (Mn), rhodium (Rh), tantalum (Ta), titanium (Ti), iridium (Ir), uranium (U), vanadium (V), and tungsten (W).
canceled
The method of claim [[5]] SVG 15051270.04-26-2017.J₂₉₁RLAKRXEAPX0.CLM.2.12.1716.1693.1758.1734.svg 0.137 0.14 Chemistry Black and white wherein the first pressure is equal to or lower than 10-9 torr and the first temperature ranges from about 500 * C to about 550 *C, and the second pressure ranges from 2x 10-7 torr to 8x 10- 7 torr and the second temperature ranges from about 340 ° C to about 400 *C.
A method of fabricating a transistor, the method comprising: growing a graphene layer on a metal layer; patterning the graphene layer; depositing a first material on a surface of the graphene layer; intercalating the first material between the graphene layer and the metal layer by heating the first material at a first pressure and a first temperature; depositing a second material over the surface of the graphene layer; Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 6 intercalating the second material between the graphene layer and the metal layer by heating the second material at a second pressure different from the first pressure and a second temperature different from the first temperature to form an insulating layer between the metal layer and the graphene layer, the first material and the second material being chemically bonded to each other; and for m ing a first electrode contacting one side of the graphene layer and a second electrode contacting another side of the graphene layer s wherein the first pressure is lower than the second pressure, and the first temperature is higher than the second temperature.
The method of claim 14, wherein the depositing a first material deposits the first material including at least one of silicon (Si), aluminum (Al), hafnium (Hf), zirconium (Zr), and lanthanum (La).
The method of claim 14, wherein the depositing a second material deposits the second material including at least one of oxygen (O) and nitrogen (N), and the intercalating the second material forms the insulating layer including one of an oxide insulator and a nitride insulator.
canceled
The method of claim [[17]] SVG 15051270.04-26-2017.J₂₉₁RLAKRXEAPX0.CLM.5.22.1747.2874.1819.2915.svg 0.137 0.24 Chemistry Black and white wherein Attorney Docket No: 2557SI-002364-US U. S. Patent Application No.: 15/051, 270 Page 7 the first pressure is equal to or lower than 10- 9 torr and the first temperature ranges from about 500 * C to about 550 0C, and the second pressure ranges from 2x 10- 7 to rr to 8x 10- 7 torr and the second temperature ranges from about 340 *C to about 400 *C.
A stacked structure comprising: a crystalline insulating layer on a metal layer, the crystalline insulating layer including a first material and a second material different from the first material, the first material and the second material being chemically bonded to each other, the second material including at least one of oxygen (O) and insulating layer. withdrawn
The stacked structure of claim 19, further layer and the insulating layer, the compound layer material and a metal of the metal layer. *** END nitrogen (N); and a graphene layer on the comprising: a compound layer between the metal including a reaction product of the first CLAIM LISTING *** withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
stacked structure with intercalated insulating layer
graphene transistor
Materials described outside the worked examples.
graphene layer
metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a cross- sectional view illustrating a structure of a transistor that is fabricated by using a stacked structure that is formed by using a method of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0–9 torr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,825,182Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 F are cross-sectional views for explaining a process of intercalating an insulating layer between a metal substrate and a graphene layer, …
FIGS. 2A and 2B are cross-sectional views for explaining a process of additionally forming an insulating layer on the graphene layer after the insulating layer …
FIGS. 3A through 3 C are cross-sectional views for explaining a process of additionally intercalating the insulating layer between the metal substrate and the …
FIGS. 4A through 4 C are cross-sectional views for explaining a process of intercalating the insulating layer between the metal substrate and the graphene …
FIGS. 5A through 5 C are cross-sectional views for explaining a process of further intercalating an additional insulating layer between the metal substrate and …
FIGS. 6A through 6 C are cross-sectional views for explaining a process of further intercalating the additional insulating layer between the metal substrate …
FIG. 7 is a cross- sectional view illustrating a structure of a transistor that is fabricated by using a stacked structure that is formed by using a method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: growing a graphene layer on a metal layer; depositing a first material on a surface of the graphene layer; intercalating the first material between the graphene layer and the metal layer by heating the first material at a first pressure and a first temperature; depositing a second material over the surface of the graphene layer; and intercalating the second material between the graphene layer and the metal layer by heating the second material at a second pressure different from the first pressure and a second temperature different from the first temperature to fo rm a first insulating layer between the metal layer and the graphene layer, the first material and the second material being chemically bonded to each other, wherein the first pressure is lower than the second pressure, and the first temperature is higher than the second temperature.
The method of claim 1, wherein the depositing a first material deposits the first material including at least one of silicon (Si), aluminum (A l), hafnium (Hf), zirconium (Zr), and lanthanum (La).
The method of claim 1, wherein Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 3 the depositing a second material deposits the second material including at least one of oxygen (O) and nitrogen (N), and the intercalating the second material forms the first insulating layer including one of an oxide insulator and a nitride insulator.
The method of claim 1, wherein the intercalating the first material and the intercalating the second material are sequentially and repeatedly performed. Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 4
The method of claim 1, wherein the intercalating the second material is continuously and repeatedly performed at least twice after the intercalating the first material is continuously and repeatedly perfor ni ed at least twice.
The method of claim 1, wherein after the intercalating the first material, the method further comprising: depositing a third material on the surface of the graphene layer, the third material being different from the first material and the second material; intercalating the third material between the graphene layer and the metal layer by heating the third material at the first pressure and the first temperature after the intercalating the first material prior to the intercalating the second material; and for u ing a second insulating layer between the metal layer and the graphene layer after the intercalating the second material, the third material and the second material being chemically bonded to each other.
The method of claim 1, after the intercalating the second material, the method further comprising: depositing a third material, on the surface of the graphene layer, the third material being different from the first material and the second material; and Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 5 intercalating the third material between the graphene layer and the metal layer by heating the third material at the first pressure and the first temperature to form a second insulating layer between the metal layer and the graphene layer, the third material and the second material being chemically bonded to each other.
The method of claim 1, further comprising: patterning the graphene layer after the growing.
The method of claim 1, wherein the metal layer includes at least one of copper (Cu), nickel (Ni), platinum (Pt), cobalt (Co), ruthenium (Ru), aluminum (A l), iron (Fe), gold (Au), magnesium (Mg), chromium (Cr), manganese (Mn), rhodium (Rh), tantalum (Ta), titanium (Ti), iridium (Ir), uranium (U), vanadium (V), and tungsten (W).
canceled
The method of claim [[5]] SVG 15051270.04-26-2017.J₂₉₁RLAKRXEAPX0.CLM.2.12.1716.1693.1758.1734.svg 0.137 0.14 Chemistry Black and white wherein the first pressure is equal to or lower than 10-9 torr and the first temperature ranges from about 500 * C to about 550 *C, and the second pressure ranges from 2x 10-7 torr to 8x 10- 7 torr and the second temperature ranges from about 340 ° C to about 400 *C.
A method of fabricating a transistor, the method comprising: growing a graphene layer on a metal layer; patterning the graphene layer; depositing a first material on a surface of the graphene layer; intercalating the first material between the graphene layer and the metal layer by heating the first material at a first pressure and a first temperature; depositing a second material over the surface of the graphene layer; Attorney Docket No: 2557SI-002364-US U.S. Patent Application No.: 15/051,270 Page 6 intercalating the second material between the graphene layer and the metal layer by heating the second material at a second pressure different from the first pressure and a second temperature different from the first temperature to form an insulating layer between the metal layer and the graphene layer, the first material and the second material being chemically bonded to each other; and for m ing a first electrode contacting one side of the graphene layer and a second electrode contacting another side of the graphene layer s wherein the first pressure is lower than the second pressure, and the first temperature is higher than the second temperature.
The method of claim 14, wherein the depositing a first material deposits the first material including at least one of silicon (Si), aluminum (Al), hafnium (Hf), zirconium (Zr), and lanthanum (La).
The method of claim 14, wherein the depositing a second material deposits the second material including at least one of oxygen (O) and nitrogen (N), and the intercalating the second material forms the insulating layer including one of an oxide insulator and a nitride insulator.
canceled
The method of claim [[17]] SVG 15051270.04-26-2017.J₂₉₁RLAKRXEAPX0.CLM.5.22.1747.2874.1819.2915.svg 0.137 0.24 Chemistry Black and white wherein Attorney Docket No: 2557SI-002364-US U. S. Patent Application No.: 15/051, 270 Page 7 the first pressure is equal to or lower than 10- 9 torr and the first temperature ranges from about 500 * C to about 550 0C, and the second pressure ranges from 2x 10- 7 to rr to 8x 10- 7 torr and the second temperature ranges from about 340 *C to about 400 *C.
A stacked structure comprising: a crystalline insulating layer on a metal layer, the crystalline insulating layer including a first material and a second material different from the first material, the first material and the second material being chemically bonded to each other, the second material including at least one of oxygen (O) and insulating layer. withdrawn
The stacked structure of claim 19, further layer and the insulating layer, the compound layer material and a metal of the metal layer. *** END nitrogen (N); and a graphene layer on the comprising: a compound layer between the metal including a reaction product of the first CLAIM LISTING *** withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
stacked structure with intercalated insulating layer
graphene transistor
Materials described outside the worked examples.
graphene layer
metal layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7 is a cross- sectional view illustrating a structure of a transistor that is fabricated by using a stacked structure that is formed by using a method of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0–9 torr | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
first material
second material
silicon
Si
aluminum
Al
hafnium
Hf
zirconium
Zr
lanthanum
La
oxygen
O
nitrogen
N
oxide insulator
nitride insulator
third material
metal layer (Cu, Ni, Pt, Co, Ru, Al, Fe, Au, Mg, Cr, Mn, Rh, Ta, Ti, Ir, U, V, W)
compound layer (reaction product of first material and metal layer metal)
| 1e-9 torr |
| — |
first material
second material
silicon
Si
aluminum
Al
hafnium
Hf
zirconium
Zr
lanthanum
La
oxygen
O
nitrogen
N
oxide insulator
nitride insulator
third material
metal layer (Cu, Ni, Pt, Co, Ru, Al, Fe, Au, Mg, Cr, Mn, Rh, Ta, Ti, Ir, U, V, W)
compound layer (reaction product of first material and metal layer metal)
| 1e-9 torr |
| — |
first material
second material
silicon
Si
aluminum
Al
hafnium
Hf
zirconium
Zr
lanthanum
La
oxygen
O
nitrogen
N
oxide insulator
nitride insulator
third material
metal layer (Cu, Ni, Pt, Co, Ru, Al, Fe, Au, Mg, Cr, Mn, Rh, Ta, Ti, Ir, U, V, W)
compound layer (reaction product of first material and metal layer metal)
| 1e-9 torr |
| — |
first material
second material
silicon
Si
aluminum
Al
hafnium
Hf
zirconium
Zr
lanthanum
La
oxygen
O
nitrogen
N
oxide insulator
nitride insulator
third material
metal layer (Cu, Ni, Pt, Co, Ru, Al, Fe, Au, Mg, Cr, Mn, Rh, Ta, Ti, Ir, U, V, W)
compound layer (reaction product of first material and metal layer metal)
| 1e-9 torr |
| — |