Patent
US 8,174,024FABRICATING A GALLIUM NITRIDE DEVICE WITH A DIAMOND LAYER
Ralph Korenstein, Steven D. Bernstein, Stephen J. Pereira
US
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US 8,174,024Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and I B, in one example, a structure 10 for use in fonning a 15 device (e.g., a high frequency device, a high electron mobility transistor (HEMT), a …
FIG. 2.
FIGS. 3A to 3 D are diagrams corresponding to the process of
FIGS. 4 and 5A to 5 H, another process to fabricate a GaN layer with a first diamond layer and a second diamond layer is a process 200. GaN 16 is grown on a …
FIGS. 5A to 5H are diagrams corresponding to the process of
FIG. 6.
FIGS. 7A to 7F are diagrams corresponding to the process of
FIG. 8 and 9A to 9 D, a still further process to fabricate a GaN layer with diamond layers is a process 370. A silicon carbide/GaN structure 380 (
FIGS. 9A to 9 D are diagrams corresponding to the process of
FIG. 10, the diamond/GaN/diamond/diamond structure 360 may be used to fabricate devices such as a high frequency device, a high electron mobility transistor …
FIGS. 11 and 12, a device 400' is similar to the device 400 with the GaN layer 16 including an A l GaN layer 412 and a pure GaN layer 416. Other GaN-type …
FIG. 12 is a graph depicting thermal performance with diamond coatings. DETAILED DESCRIPTION Hot filament chemical vapor deposition (CVD) processes have been …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a gallium nitride (GaN) layer; a first diamond layer disposed on the GaN layer; and a gate structure disposed in contact with the GaN layer and the f i rst diamond layer; and a second diamond layer having a first thermal conductivity and dis p osed on a second surface-of the GaN layer, wherein the gate and the first diamond layer are disposed on a first surface of the GaN la y er opposite the second surface of the GaN layer.
The device of claim 1 [[2]], further comprising a third diamond layer having a second thermal conductivity greater than the first thermal conductivity and disposed on the second diamond layer.
Applicants Ralph Korenstein, et al. Attorney Docket No.: RTN-328AUS Serial No.: 13/157,653 Filed: Page: 4 of 8 4. The device of claim 1, further comprising an interlayer disposed between the second diamond layer and the GaN layer.
The device of claim 1 wherein the second diamond layer is greater than 2 mils and the first diamond layer less than 1 m il.
The device of claim 1 wherein the device is one of a high frequency device, a high electron mobility transistor (HEMT) or a microwave device.
The device of claim 1 wherein the GaN layer comprises at least one of undoped GaN, doped GaN or GaN combined with another element.
A device, comprising: a gallium nitride (GaN) layer; a first diamond layer disposed on the GaN layer; a gate structure disposed in contact with the GaN layer and the first diamond layer; and a second diamond layer having a first thermal conductivity and disposed on a second surface of the GaN layer; and an interlayer disposed between the second diamond layer and the GaN layer, wherein the gate and the first diamond layer are disposed on a first surface of the GaN layer opposite the second surface of the GaN layer, wherein the GaN layer comprises at least one of undoped GaN, doped GaN or GaN combined with another element.
Applicants: Ralph Korenstein, et al. Attorney Docket No.: RTN-32 8 AUS Serial No.: 13/157,653 Filed: Page: 5 of 8 9. The device of claim 8, further comprising a third diamond layer having a second thermal conductivity greater than the first thermal conductivity and disposed on the second diamond layer.
The device of claim 8 wherein the second diamond layer is greater than 2 mils and the first diamond layer less than 1 m il.
The device of claim 8 wherein the device is one of a high frequency device, a high electron mobility transistor (HEMT) or a microwave device.
Layer stacks claimed or described, ordered top of device to substrate.
GaN device with dual diamond layers and gate
GaN device with dual diamond layers, interlayer and gate
Materials described outside the worked examples.
gallium nitride
GaN
first diamond layer
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 A and I B, in one example, a structure 10 for use in fonning a 15 device (e.g., a high frequency device, a high electron mobility transistor (HEMT), a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal conductivity of hot filament CVD diamond | 800–1000 W/m-K | C |
thermal conductivity of microwave plasma CVD diamond (greater than 1500 W/m-K) | ≥ 1500 W/m-K |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,174,024Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and I B, in one example, a structure 10 for use in fonning a 15 device (e.g., a high frequency device, a high electron mobility transistor (HEMT), a …
FIG. 2.
FIGS. 3A to 3 D are diagrams corresponding to the process of
FIGS. 4 and 5A to 5 H, another process to fabricate a GaN layer with a first diamond layer and a second diamond layer is a process 200. GaN 16 is grown on a …
FIGS. 5A to 5H are diagrams corresponding to the process of
FIG. 6.
FIGS. 7A to 7F are diagrams corresponding to the process of
FIG. 8 and 9A to 9 D, a still further process to fabricate a GaN layer with diamond layers is a process 370. A silicon carbide/GaN structure 380 (
FIGS. 9A to 9 D are diagrams corresponding to the process of
FIG. 10, the diamond/GaN/diamond/diamond structure 360 may be used to fabricate devices such as a high frequency device, a high electron mobility transistor …
FIGS. 11 and 12, a device 400' is similar to the device 400 with the GaN layer 16 including an A l GaN layer 412 and a pure GaN layer 416. Other GaN-type …
FIG. 12 is a graph depicting thermal performance with diamond coatings. DETAILED DESCRIPTION Hot filament chemical vapor deposition (CVD) processes have been …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a gallium nitride (GaN) layer; a first diamond layer disposed on the GaN layer; and a gate structure disposed in contact with the GaN layer and the f i rst diamond layer; and a second diamond layer having a first thermal conductivity and dis p osed on a second surface-of the GaN layer, wherein the gate and the first diamond layer are disposed on a first surface of the GaN la y er opposite the second surface of the GaN layer.
The device of claim 1 [[2]], further comprising a third diamond layer having a second thermal conductivity greater than the first thermal conductivity and disposed on the second diamond layer.
Applicants Ralph Korenstein, et al. Attorney Docket No.: RTN-328AUS Serial No.: 13/157,653 Filed: Page: 4 of 8 4. The device of claim 1, further comprising an interlayer disposed between the second diamond layer and the GaN layer.
The device of claim 1 wherein the second diamond layer is greater than 2 mils and the first diamond layer less than 1 m il.
The device of claim 1 wherein the device is one of a high frequency device, a high electron mobility transistor (HEMT) or a microwave device.
The device of claim 1 wherein the GaN layer comprises at least one of undoped GaN, doped GaN or GaN combined with another element.
A device, comprising: a gallium nitride (GaN) layer; a first diamond layer disposed on the GaN layer; a gate structure disposed in contact with the GaN layer and the first diamond layer; and a second diamond layer having a first thermal conductivity and disposed on a second surface of the GaN layer; and an interlayer disposed between the second diamond layer and the GaN layer, wherein the gate and the first diamond layer are disposed on a first surface of the GaN layer opposite the second surface of the GaN layer, wherein the GaN layer comprises at least one of undoped GaN, doped GaN or GaN combined with another element.
Applicants: Ralph Korenstein, et al. Attorney Docket No.: RTN-32 8 AUS Serial No.: 13/157,653 Filed: Page: 5 of 8 9. The device of claim 8, further comprising a third diamond layer having a second thermal conductivity greater than the first thermal conductivity and disposed on the second diamond layer.
The device of claim 8 wherein the second diamond layer is greater than 2 mils and the first diamond layer less than 1 m il.
The device of claim 8 wherein the device is one of a high frequency device, a high electron mobility transistor (HEMT) or a microwave device.
Layer stacks claimed or described, ordered top of device to substrate.
GaN device with dual diamond layers and gate
GaN device with dual diamond layers, interlayer and gate
Materials described outside the worked examples.
gallium nitride
GaN
first diamond layer
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 A and I B, in one example, a structure 10 for use in fonning a 15 device (e.g., a high frequency device, a high electron mobility transistor (HEMT), a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal conductivity of hot filament CVD diamond | 800–1000 W/m-K | C |
thermal conductivity of microwave plasma CVD diamond (greater than 1500 W/m-K) | ≥ 1500 W/m-K |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,174,024Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and I B, in one example, a structure 10 for use in fonning a 15 device (e.g., a high frequency device, a high electron mobility transistor (HEMT), a …
FIG. 2.
FIGS. 3A to 3 D are diagrams corresponding to the process of
FIGS. 4 and 5A to 5 H, another process to fabricate a GaN layer with a first diamond layer and a second diamond layer is a process 200. GaN 16 is grown on a …
FIGS. 5A to 5H are diagrams corresponding to the process of
FIG. 6.
FIGS. 7A to 7F are diagrams corresponding to the process of
FIG. 8 and 9A to 9 D, a still further process to fabricate a GaN layer with diamond layers is a process 370. A silicon carbide/GaN structure 380 (
FIGS. 9A to 9 D are diagrams corresponding to the process of
FIG. 10, the diamond/GaN/diamond/diamond structure 360 may be used to fabricate devices such as a high frequency device, a high electron mobility transistor …
FIGS. 11 and 12, a device 400' is similar to the device 400 with the GaN layer 16 including an A l GaN layer 412 and a pure GaN layer 416. Other GaN-type …
FIG. 12 is a graph depicting thermal performance with diamond coatings. DETAILED DESCRIPTION Hot filament chemical vapor deposition (CVD) processes have been …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a gallium nitride (GaN) layer; a first diamond layer disposed on the GaN layer; and a gate structure disposed in contact with the GaN layer and the f i rst diamond layer; and a second diamond layer having a first thermal conductivity and dis p osed on a second surface-of the GaN layer, wherein the gate and the first diamond layer are disposed on a first surface of the GaN la y er opposite the second surface of the GaN layer.
The device of claim 1 [[2]], further comprising a third diamond layer having a second thermal conductivity greater than the first thermal conductivity and disposed on the second diamond layer.
Applicants Ralph Korenstein, et al. Attorney Docket No.: RTN-328AUS Serial No.: 13/157,653 Filed: Page: 4 of 8 4. The device of claim 1, further comprising an interlayer disposed between the second diamond layer and the GaN layer.
The device of claim 1 wherein the second diamond layer is greater than 2 mils and the first diamond layer less than 1 m il.
The device of claim 1 wherein the device is one of a high frequency device, a high electron mobility transistor (HEMT) or a microwave device.
The device of claim 1 wherein the GaN layer comprises at least one of undoped GaN, doped GaN or GaN combined with another element.
A device, comprising: a gallium nitride (GaN) layer; a first diamond layer disposed on the GaN layer; a gate structure disposed in contact with the GaN layer and the first diamond layer; and a second diamond layer having a first thermal conductivity and disposed on a second surface of the GaN layer; and an interlayer disposed between the second diamond layer and the GaN layer, wherein the gate and the first diamond layer are disposed on a first surface of the GaN layer opposite the second surface of the GaN layer, wherein the GaN layer comprises at least one of undoped GaN, doped GaN or GaN combined with another element.
Applicants: Ralph Korenstein, et al. Attorney Docket No.: RTN-32 8 AUS Serial No.: 13/157,653 Filed: Page: 5 of 8 9. The device of claim 8, further comprising a third diamond layer having a second thermal conductivity greater than the first thermal conductivity and disposed on the second diamond layer.
The device of claim 8 wherein the second diamond layer is greater than 2 mils and the first diamond layer less than 1 m il.
The device of claim 8 wherein the device is one of a high frequency device, a high electron mobility transistor (HEMT) or a microwave device.
Layer stacks claimed or described, ordered top of device to substrate.
GaN device with dual diamond layers and gate
GaN device with dual diamond layers, interlayer and gate
Materials described outside the worked examples.
gallium nitride
GaN
first diamond layer
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 A and I B, in one example, a structure 10 for use in fonning a 15 device (e.g., a high frequency device, a high electron mobility transistor (HEMT), a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal conductivity of hot filament CVD diamond | 800–1000 W/m-K | C |
thermal conductivity of microwave plasma CVD diamond (greater than 1500 W/m-K) | ≥ 1500 W/m-K |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,174,024Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and I B, in one example, a structure 10 for use in fonning a 15 device (e.g., a high frequency device, a high electron mobility transistor (HEMT), a …
FIG. 2.
FIGS. 3A to 3 D are diagrams corresponding to the process of
FIGS. 4 and 5A to 5 H, another process to fabricate a GaN layer with a first diamond layer and a second diamond layer is a process 200. GaN 16 is grown on a …
FIGS. 5A to 5H are diagrams corresponding to the process of
FIG. 6.
FIGS. 7A to 7F are diagrams corresponding to the process of
FIG. 8 and 9A to 9 D, a still further process to fabricate a GaN layer with diamond layers is a process 370. A silicon carbide/GaN structure 380 (
FIGS. 9A to 9 D are diagrams corresponding to the process of
FIG. 10, the diamond/GaN/diamond/diamond structure 360 may be used to fabricate devices such as a high frequency device, a high electron mobility transistor …
FIGS. 11 and 12, a device 400' is similar to the device 400 with the GaN layer 16 including an A l GaN layer 412 and a pure GaN layer 416. Other GaN-type …
FIG. 12 is a graph depicting thermal performance with diamond coatings. DETAILED DESCRIPTION Hot filament chemical vapor deposition (CVD) processes have been …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a gallium nitride (GaN) layer; a first diamond layer disposed on the GaN layer; and a gate structure disposed in contact with the GaN layer and the f i rst diamond layer; and a second diamond layer having a first thermal conductivity and dis p osed on a second surface-of the GaN layer, wherein the gate and the first diamond layer are disposed on a first surface of the GaN la y er opposite the second surface of the GaN layer.
The device of claim 1 [[2]], further comprising a third diamond layer having a second thermal conductivity greater than the first thermal conductivity and disposed on the second diamond layer.
Applicants Ralph Korenstein, et al. Attorney Docket No.: RTN-328AUS Serial No.: 13/157,653 Filed: Page: 4 of 8 4. The device of claim 1, further comprising an interlayer disposed between the second diamond layer and the GaN layer.
The device of claim 1 wherein the second diamond layer is greater than 2 mils and the first diamond layer less than 1 m il.
The device of claim 1 wherein the device is one of a high frequency device, a high electron mobility transistor (HEMT) or a microwave device.
The device of claim 1 wherein the GaN layer comprises at least one of undoped GaN, doped GaN or GaN combined with another element.
A device, comprising: a gallium nitride (GaN) layer; a first diamond layer disposed on the GaN layer; a gate structure disposed in contact with the GaN layer and the first diamond layer; and a second diamond layer having a first thermal conductivity and disposed on a second surface of the GaN layer; and an interlayer disposed between the second diamond layer and the GaN layer, wherein the gate and the first diamond layer are disposed on a first surface of the GaN layer opposite the second surface of the GaN layer, wherein the GaN layer comprises at least one of undoped GaN, doped GaN or GaN combined with another element.
Applicants: Ralph Korenstein, et al. Attorney Docket No.: RTN-32 8 AUS Serial No.: 13/157,653 Filed: Page: 5 of 8 9. The device of claim 8, further comprising a third diamond layer having a second thermal conductivity greater than the first thermal conductivity and disposed on the second diamond layer.
The device of claim 8 wherein the second diamond layer is greater than 2 mils and the first diamond layer less than 1 m il.
The device of claim 8 wherein the device is one of a high frequency device, a high electron mobility transistor (HEMT) or a microwave device.
Layer stacks claimed or described, ordered top of device to substrate.
GaN device with dual diamond layers and gate
GaN device with dual diamond layers, interlayer and gate
Materials described outside the worked examples.
gallium nitride
GaN
first diamond layer
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 A and I B, in one example, a structure 10 for use in fonning a 15 device (e.g., a high frequency device, a high electron mobility transistor (HEMT), a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal conductivity of hot filament CVD diamond | 800–1000 W/m-K | C |
thermal conductivity of microwave plasma CVD diamond (greater than 1500 W/m-K) | ≥ 1500 W/m-K |
Related documents with shared materials, methods, properties, or citations.
interlayer
FIG. 10, the diamond/GaN/diamond/diamond structure 360 may be used to fabricate devices such as a high frequency device, a high electron mobility transistor …
Thickness | 5–20 µm | — |
— | ≥ 1500 W | — |
Temperature | ≥ 25 °C | — |
interlayer
FIG. 10, the diamond/GaN/diamond/diamond structure 360 may be used to fabricate devices such as a high frequency device, a high electron mobility transistor …
Thickness | 5–20 µm | — |
— | ≥ 1500 W | — |
Temperature | ≥ 25 °C | — |
interlayer
FIG. 10, the diamond/GaN/diamond/diamond structure 360 may be used to fabricate devices such as a high frequency device, a high electron mobility transistor …
Thickness | 5–20 µm | — |
— | ≥ 1500 W | — |
Temperature | ≥ 25 °C | — |
interlayer
FIG. 10, the diamond/GaN/diamond/diamond structure 360 may be used to fabricate devices such as a high frequency device, a high electron mobility transistor …
Thickness | 5–20 µm | — |
— | ≥ 1500 W | — |
Temperature | ≥ 25 °C | — |