Patent
US 9,595,632METHOD FOR PRODUCING GaN-BASED CRYSTAL AND SEMICONDUCTOR DEVICE
Kazutaka TERASHIMA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,595,632Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view showing a post-crystal growth state in each of examples 1 through 4 according to the present invention; 25
FIG. 2 is a cross-sectional view showing a post-crystal growth state in example 5 according to the present invention;
FIG. 3 is a graph showing the dependence of the defect density of a GaN-based crystal layer on the off-angle of a Si substrate in the examples 4 …
FIG. 4 is a cross-sectional view of a semiconductor laser device using a GaN-based crystal grown by a method according to the present invention;
FIG. 5 is a cross-sectional view showing a method for producing a 5 high-luminance light emitting diode using a GaN-based crystal grown by a method according …
FIG. 6 is a cross-sectional view showing the method for producing the high-luminance light emitting diode using the GaN-based crystal grown by the method …
FIG. 7 is a cross-sectional view showing the method for producing the high- luminance light emitting diode using the GaN-based crystal grown by the method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a GaN-based crystal, comprising: forming a BP crystal layer of a Zinc-blende type structure on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blende type structure; and forming a first GaN-based crystal layer of the Zinc-blende type structure on the In- containing layer;and forming a second GaN-based crystal layer of the Zinc-blende type structure on the first GaN-based cr y stal la y er, thereby a double-heteroiunction is formed.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is a metallic In layer having a thickness of 4 atom layers or less.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is an InGaN layer having a thickness of 2 nm or less.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is an InA l mixture layer having a thickness of 4 atom layers or less and contains Al at a content of 10 % or less. 2 Application No. 14/629,063 Attorney Docket No. 05200003U S Response to Office Action of
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is an A l InGaN layer having a thickness of 2 nm or less and contains Al at a content of 10 % or less.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is a super-lattice layer obtained by repeatedly stacking A lxIn y Gai-x- y N and A lx'In y 'Gai-x'-y' N layers.
The method for producing a GaN-based crystal according to claim 1, wherein the Si substrate has an off-angle of 3 ° or greater and 23 0 or less with respect to a (100) plane.
The method for producing a GaN-based crystal according to claim 1, wherein the BP crystal layer has a Si concentration of 10 17 cm⁻³ or greater and 10 21 cm⁻³ or less.
A light emitting device, comprising: the first GaN-based crystal produced by the method according to claim 1; and a double-heterojunction formed on the GaN-based crystal.
A method for producing a light emitting device according to claim 1, comprising: removing,
A method for producing a GaN-based crystal, comprising: forming a BP crystal layer of a Zinc-blende type structure that has a Si concentration of 101 7 cm⁻³ or greater and 10 2 1 cm⁻³ or less on a Si substrate; and forming a first GaN-based crystal layer of the Zinc-blende type structure at a position above the BP crystal layer: and forming a second GaN-based crystal laver of the Zinc-blende type structure on the first GaN-based cr y stal la y er, thereby a double-heteroiunction is formed. 3 Application No. 14/629,063 Attorney Docket No. 05200003U S Response to Office Action of
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials3 process steps
A P-doped n-type Si(100) substrate with 6-degree off-angle toward <110> is used. A BP crystal film of 500 nm thickness is formed at 1000°C using PH₃ and B₂H₆ for ~1 hour, resulting in a Si concentration of ~10¹⁸ cm⁻³ in the BP film. The substrate is transferred under nitrogen atmosphere to another reactor, heated to 1100°C, and surface-treated with hydrogen for 5 min. Temperature is lowered to 650°C and trimethylindium is flowed for 1 second to deposit a metallic In film of ~1 atom layer (~0.5 nm). Then monomethylhydrazine and trimethylgallium are flowed for ~1500 s to deposit a 20 nm GaN film, followed by raising temperature to 730°C and flowing both gases for ~3600 s to deposit ~1 µm GaN film. The resulting GaN film has a zinc-blende crystal structure and dislocation density of ~10⁶ cm⁻².
4 materials2 process steps
A BP crystal film of 500 nm is formed on a P-doped n-type Si(100) substrate as in Example 1. The substrate is transferred under nitrogen atmosphere to another reactor, heated to 1100°C, surface-treated with hydrogen for 5 min, then cooled to 650°C. Monomethylhydrazine, trimethylgallium, and trimethylindium are flowed for 10 seconds to deposit an InGaN film of ~0.5 to 2 nm thickness (1 to several atom layers). Subsequently GaN films are deposited similarly to Example 1.
Layer stacks claimed or described, ordered top of device to substrate.
zinc-blende GaN-based double-heterojunction structure on Si
light emitting device with double-heterojunction on GaN-based crystal
Materials described outside the worked examples.
InAl mixture layer
InAl
AlInGaN layer
AlInGaN
super-lattice In-containing layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph showing the dependence of the defect density of a GaN-based crystal layer on the off-angle of a Si substrate in the examples 4 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density | 1000000 cm⁻² | AlxInyGa(1-x-y)N |
Thickness | 0.5–2 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,595,632Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view showing a post-crystal growth state in each of examples 1 through 4 according to the present invention; 25
FIG. 2 is a cross-sectional view showing a post-crystal growth state in example 5 according to the present invention;
FIG. 3 is a graph showing the dependence of the defect density of a GaN-based crystal layer on the off-angle of a Si substrate in the examples 4 …
FIG. 4 is a cross-sectional view of a semiconductor laser device using a GaN-based crystal grown by a method according to the present invention;
FIG. 5 is a cross-sectional view showing a method for producing a 5 high-luminance light emitting diode using a GaN-based crystal grown by a method according …
FIG. 6 is a cross-sectional view showing the method for producing the high-luminance light emitting diode using the GaN-based crystal grown by the method …
FIG. 7 is a cross-sectional view showing the method for producing the high- luminance light emitting diode using the GaN-based crystal grown by the method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a GaN-based crystal, comprising: forming a BP crystal layer of a Zinc-blende type structure on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blende type structure; and forming a first GaN-based crystal layer of the Zinc-blende type structure on the In- containing layer;and forming a second GaN-based crystal layer of the Zinc-blende type structure on the first GaN-based cr y stal la y er, thereby a double-heteroiunction is formed.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is a metallic In layer having a thickness of 4 atom layers or less.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is an InGaN layer having a thickness of 2 nm or less.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is an InA l mixture layer having a thickness of 4 atom layers or less and contains Al at a content of 10 % or less. 2 Application No. 14/629,063 Attorney Docket No. 05200003U S Response to Office Action of
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is an A l InGaN layer having a thickness of 2 nm or less and contains Al at a content of 10 % or less.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is a super-lattice layer obtained by repeatedly stacking A lxIn y Gai-x- y N and A lx'In y 'Gai-x'-y' N layers.
The method for producing a GaN-based crystal according to claim 1, wherein the Si substrate has an off-angle of 3 ° or greater and 23 0 or less with respect to a (100) plane.
The method for producing a GaN-based crystal according to claim 1, wherein the BP crystal layer has a Si concentration of 10 17 cm⁻³ or greater and 10 21 cm⁻³ or less.
A light emitting device, comprising: the first GaN-based crystal produced by the method according to claim 1; and a double-heterojunction formed on the GaN-based crystal.
A method for producing a light emitting device according to claim 1, comprising: removing,
A method for producing a GaN-based crystal, comprising: forming a BP crystal layer of a Zinc-blende type structure that has a Si concentration of 101 7 cm⁻³ or greater and 10 2 1 cm⁻³ or less on a Si substrate; and forming a first GaN-based crystal layer of the Zinc-blende type structure at a position above the BP crystal layer: and forming a second GaN-based crystal laver of the Zinc-blende type structure on the first GaN-based cr y stal la y er, thereby a double-heteroiunction is formed. 3 Application No. 14/629,063 Attorney Docket No. 05200003U S Response to Office Action of
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials3 process steps
A P-doped n-type Si(100) substrate with 6-degree off-angle toward <110> is used. A BP crystal film of 500 nm thickness is formed at 1000°C using PH₃ and B₂H₆ for ~1 hour, resulting in a Si concentration of ~10¹⁸ cm⁻³ in the BP film. The substrate is transferred under nitrogen atmosphere to another reactor, heated to 1100°C, and surface-treated with hydrogen for 5 min. Temperature is lowered to 650°C and trimethylindium is flowed for 1 second to deposit a metallic In film of ~1 atom layer (~0.5 nm). Then monomethylhydrazine and trimethylgallium are flowed for ~1500 s to deposit a 20 nm GaN film, followed by raising temperature to 730°C and flowing both gases for ~3600 s to deposit ~1 µm GaN film. The resulting GaN film has a zinc-blende crystal structure and dislocation density of ~10⁶ cm⁻².
4 materials2 process steps
A BP crystal film of 500 nm is formed on a P-doped n-type Si(100) substrate as in Example 1. The substrate is transferred under nitrogen atmosphere to another reactor, heated to 1100°C, surface-treated with hydrogen for 5 min, then cooled to 650°C. Monomethylhydrazine, trimethylgallium, and trimethylindium are flowed for 10 seconds to deposit an InGaN film of ~0.5 to 2 nm thickness (1 to several atom layers). Subsequently GaN films are deposited similarly to Example 1.
Layer stacks claimed or described, ordered top of device to substrate.
zinc-blende GaN-based double-heterojunction structure on Si
light emitting device with double-heterojunction on GaN-based crystal
Materials described outside the worked examples.
InAl mixture layer
InAl
AlInGaN layer
AlInGaN
super-lattice In-containing layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph showing the dependence of the defect density of a GaN-based crystal layer on the off-angle of a Si substrate in the examples 4 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density | 1000000 cm⁻² | AlxInyGa(1-x-y)N |
Thickness | 0.5–2 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,595,632Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view showing a post-crystal growth state in each of examples 1 through 4 according to the present invention; 25
FIG. 2 is a cross-sectional view showing a post-crystal growth state in example 5 according to the present invention;
FIG. 3 is a graph showing the dependence of the defect density of a GaN-based crystal layer on the off-angle of a Si substrate in the examples 4 …
FIG. 4 is a cross-sectional view of a semiconductor laser device using a GaN-based crystal grown by a method according to the present invention;
FIG. 5 is a cross-sectional view showing a method for producing a 5 high-luminance light emitting diode using a GaN-based crystal grown by a method according …
FIG. 6 is a cross-sectional view showing the method for producing the high-luminance light emitting diode using the GaN-based crystal grown by the method …
FIG. 7 is a cross-sectional view showing the method for producing the high- luminance light emitting diode using the GaN-based crystal grown by the method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a GaN-based crystal, comprising: forming a BP crystal layer of a Zinc-blende type structure on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blende type structure; and forming a first GaN-based crystal layer of the Zinc-blende type structure on the In- containing layer;and forming a second GaN-based crystal layer of the Zinc-blende type structure on the first GaN-based cr y stal la y er, thereby a double-heteroiunction is formed.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is a metallic In layer having a thickness of 4 atom layers or less.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is an InGaN layer having a thickness of 2 nm or less.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is an InA l mixture layer having a thickness of 4 atom layers or less and contains Al at a content of 10 % or less. 2 Application No. 14/629,063 Attorney Docket No. 05200003U S Response to Office Action of
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is an A l InGaN layer having a thickness of 2 nm or less and contains Al at a content of 10 % or less.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is a super-lattice layer obtained by repeatedly stacking A lxIn y Gai-x- y N and A lx'In y 'Gai-x'-y' N layers.
The method for producing a GaN-based crystal according to claim 1, wherein the Si substrate has an off-angle of 3 ° or greater and 23 0 or less with respect to a (100) plane.
The method for producing a GaN-based crystal according to claim 1, wherein the BP crystal layer has a Si concentration of 10 17 cm⁻³ or greater and 10 21 cm⁻³ or less.
A light emitting device, comprising: the first GaN-based crystal produced by the method according to claim 1; and a double-heterojunction formed on the GaN-based crystal.
A method for producing a light emitting device according to claim 1, comprising: removing,
A method for producing a GaN-based crystal, comprising: forming a BP crystal layer of a Zinc-blende type structure that has a Si concentration of 101 7 cm⁻³ or greater and 10 2 1 cm⁻³ or less on a Si substrate; and forming a first GaN-based crystal layer of the Zinc-blende type structure at a position above the BP crystal layer: and forming a second GaN-based crystal laver of the Zinc-blende type structure on the first GaN-based cr y stal la y er, thereby a double-heteroiunction is formed. 3 Application No. 14/629,063 Attorney Docket No. 05200003U S Response to Office Action of
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials3 process steps
A P-doped n-type Si(100) substrate with 6-degree off-angle toward <110> is used. A BP crystal film of 500 nm thickness is formed at 1000°C using PH₃ and B₂H₆ for ~1 hour, resulting in a Si concentration of ~10¹⁸ cm⁻³ in the BP film. The substrate is transferred under nitrogen atmosphere to another reactor, heated to 1100°C, and surface-treated with hydrogen for 5 min. Temperature is lowered to 650°C and trimethylindium is flowed for 1 second to deposit a metallic In film of ~1 atom layer (~0.5 nm). Then monomethylhydrazine and trimethylgallium are flowed for ~1500 s to deposit a 20 nm GaN film, followed by raising temperature to 730°C and flowing both gases for ~3600 s to deposit ~1 µm GaN film. The resulting GaN film has a zinc-blende crystal structure and dislocation density of ~10⁶ cm⁻².
4 materials2 process steps
A BP crystal film of 500 nm is formed on a P-doped n-type Si(100) substrate as in Example 1. The substrate is transferred under nitrogen atmosphere to another reactor, heated to 1100°C, surface-treated with hydrogen for 5 min, then cooled to 650°C. Monomethylhydrazine, trimethylgallium, and trimethylindium are flowed for 10 seconds to deposit an InGaN film of ~0.5 to 2 nm thickness (1 to several atom layers). Subsequently GaN films are deposited similarly to Example 1.
Layer stacks claimed or described, ordered top of device to substrate.
zinc-blende GaN-based double-heterojunction structure on Si
light emitting device with double-heterojunction on GaN-based crystal
Materials described outside the worked examples.
InAl mixture layer
InAl
AlInGaN layer
AlInGaN
super-lattice In-containing layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph showing the dependence of the defect density of a GaN-based crystal layer on the off-angle of a Si substrate in the examples 4 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density | 1000000 cm⁻² | AlxInyGa(1-x-y)N |
Thickness | 0.5–2 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,595,632Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view showing a post-crystal growth state in each of examples 1 through 4 according to the present invention; 25
FIG. 2 is a cross-sectional view showing a post-crystal growth state in example 5 according to the present invention;
FIG. 3 is a graph showing the dependence of the defect density of a GaN-based crystal layer on the off-angle of a Si substrate in the examples 4 …
FIG. 4 is a cross-sectional view of a semiconductor laser device using a GaN-based crystal grown by a method according to the present invention;
FIG. 5 is a cross-sectional view showing a method for producing a 5 high-luminance light emitting diode using a GaN-based crystal grown by a method according …
FIG. 6 is a cross-sectional view showing the method for producing the high-luminance light emitting diode using the GaN-based crystal grown by the method …
FIG. 7 is a cross-sectional view showing the method for producing the high- luminance light emitting diode using the GaN-based crystal grown by the method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a GaN-based crystal, comprising: forming a BP crystal layer of a Zinc-blende type structure on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blende type structure; and forming a first GaN-based crystal layer of the Zinc-blende type structure on the In- containing layer;and forming a second GaN-based crystal layer of the Zinc-blende type structure on the first GaN-based cr y stal la y er, thereby a double-heteroiunction is formed.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is a metallic In layer having a thickness of 4 atom layers or less.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is an InGaN layer having a thickness of 2 nm or less.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is an InA l mixture layer having a thickness of 4 atom layers or less and contains Al at a content of 10 % or less. 2 Application No. 14/629,063 Attorney Docket No. 05200003U S Response to Office Action of
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is an A l InGaN layer having a thickness of 2 nm or less and contains Al at a content of 10 % or less.
The method for producing a GaN-based crystal according to claim 1, wherein the In-containing layer is a super-lattice layer obtained by repeatedly stacking A lxIn y Gai-x- y N and A lx'In y 'Gai-x'-y' N layers.
The method for producing a GaN-based crystal according to claim 1, wherein the Si substrate has an off-angle of 3 ° or greater and 23 0 or less with respect to a (100) plane.
The method for producing a GaN-based crystal according to claim 1, wherein the BP crystal layer has a Si concentration of 10 17 cm⁻³ or greater and 10 21 cm⁻³ or less.
A light emitting device, comprising: the first GaN-based crystal produced by the method according to claim 1; and a double-heterojunction formed on the GaN-based crystal.
A method for producing a light emitting device according to claim 1, comprising: removing,
A method for producing a GaN-based crystal, comprising: forming a BP crystal layer of a Zinc-blende type structure that has a Si concentration of 101 7 cm⁻³ or greater and 10 2 1 cm⁻³ or less on a Si substrate; and forming a first GaN-based crystal layer of the Zinc-blende type structure at a position above the BP crystal layer: and forming a second GaN-based crystal laver of the Zinc-blende type structure on the first GaN-based cr y stal la y er, thereby a double-heteroiunction is formed. 3 Application No. 14/629,063 Attorney Docket No. 05200003U S Response to Office Action of
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials3 process steps
A P-doped n-type Si(100) substrate with 6-degree off-angle toward <110> is used. A BP crystal film of 500 nm thickness is formed at 1000°C using PH₃ and B₂H₆ for ~1 hour, resulting in a Si concentration of ~10¹⁸ cm⁻³ in the BP film. The substrate is transferred under nitrogen atmosphere to another reactor, heated to 1100°C, and surface-treated with hydrogen for 5 min. Temperature is lowered to 650°C and trimethylindium is flowed for 1 second to deposit a metallic In film of ~1 atom layer (~0.5 nm). Then monomethylhydrazine and trimethylgallium are flowed for ~1500 s to deposit a 20 nm GaN film, followed by raising temperature to 730°C and flowing both gases for ~3600 s to deposit ~1 µm GaN film. The resulting GaN film has a zinc-blende crystal structure and dislocation density of ~10⁶ cm⁻².
4 materials2 process steps
A BP crystal film of 500 nm is formed on a P-doped n-type Si(100) substrate as in Example 1. The substrate is transferred under nitrogen atmosphere to another reactor, heated to 1100°C, surface-treated with hydrogen for 5 min, then cooled to 650°C. Monomethylhydrazine, trimethylgallium, and trimethylindium are flowed for 10 seconds to deposit an InGaN film of ~0.5 to 2 nm thickness (1 to several atom layers). Subsequently GaN films are deposited similarly to Example 1.
Layer stacks claimed or described, ordered top of device to substrate.
zinc-blende GaN-based double-heterojunction structure on Si
light emitting device with double-heterojunction on GaN-based crystal
Materials described outside the worked examples.
InAl mixture layer
InAl
AlInGaN layer
AlInGaN
super-lattice In-containing layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph showing the dependence of the defect density of a GaN-based crystal layer on the off-angle of a Si substrate in the examples 4 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density | 1000000 cm⁻² | AlxInyGa(1-x-y)N |
Thickness | 0.5–2 nm |
Related documents with shared materials, methods, properties, or citations.
AlxInyGa(1-x-y)N / Alx'Iny'Ga(1-x'-y')N superlattice
| — |
Thickness | 1–3 nm | — |
AlxInyGa(1-x-y)N / Alx'Iny'Ga(1-x'-y')N superlattice
| — |
Thickness | 1–3 nm | — |
AlxInyGa(1-x-y)N / Alx'Iny'Ga(1-x'-y')N superlattice
| — |
Thickness | 1–3 nm | — |
AlxInyGa(1-x-y)N / Alx'Iny'Ga(1-x'-y')N superlattice
| — |
Thickness | 1–3 nm | — |