. A method comprising: implanting ions in a diamond substrate to provide a top compliant layer to form a top compliant surface on the diamond substrate; and addini g bonding a layer of wide bandgap material on the top compliant surface of the ion implanted diamond substrate such that the compliant layer reduces a lattice mismatch between the substrate and the layer of g rown bonded wide bandgap material.

4.

5.

The method of claim [[5]] 2 wherein bonding the layer of cubic boron nitride to the top compliant surfaces is done using optical bonding.

A method comprising: forming a top compliant layer in [[a]] an ion i m planted diamond substrate to form a top compliant surface on the diamond substrate; and addini g bonding a layer of wide ban dgap mater ial cubic boron nitride on the top compliant surface of the ion implanted diamond substrate such that the compliant layer reduces a lattice mismatch between the substrate and the layer of adde d4wide ban d gap bonded cubic boron nitride material.

13.

14.

(Currentl y Amended) The method of claim [[14]] 12 wherein bondi ng the lay er of cubic boron nitride to the top compliant surfaces is done using optical bonding.

A method comprising: implanting hydrogen ions in a diamond substrate to provide a top compliant layer to form a top compliant surface on the diamond substrate; and addin g bonding a layer of cubic boron nitride on the top compliant surface of the hydrogen implanted diamond substrate such that the compliant layer reduces a lattice mismatch between the substrate and the layer of cubic boron nitride.

20.

21.

(Currentl y Amended) The method of claim [[21]] 19 wherein bondi ng the lay er of cubic boron nitride to the top compliant surfaces is done using optical bonding.

AMENDMENT AND RESPONSE UNDER 37 C.F.R § 1.111 Serial Number: 13/410,693 Page 12 Filing Date: Dkt: 1914.021US₂ Title: GALLIUM NITRIDE LIGHT EMITTING DEVICES ON DIAMOND 27. A method comprising: implanting H₂ in a diamond substrate to provide a top compliant layer; grewiin g bonding a layer of p or n doped cubic boron nitride on the H₂ implanted diamond substrate; growing a layer of diamond on the layer of p or n doped cubic boron nitride; implanting H₂ in the grown diamond layer; and growing a layer of n or p doped cubic boron nitride on the H₂ implanted grown diamond layer.

. A method comprising: implanting ions in a diamond substrate to provide a top compliant layer to form a top compliant surface on the diamond substrate; and addini g bonding a layer of wide bandgap material on the top compliant surface of the ion implanted diamond substrate such that the compliant layer reduces a lattice mismatch between the substrate and the layer of g rown bonded wide bandgap material.

4.

5.

The method of claim [[5]] 2 wherein bonding the layer of cubic boron nitride to the top compliant surfaces is done using optical bonding.

A method comprising: forming a top compliant layer in [[a]] an ion i m planted diamond substrate to form a top compliant surface on the diamond substrate; and addini g bonding a layer of wide ban dgap mater ial cubic boron nitride on the top compliant surface of the ion implanted diamond substrate such that the compliant layer reduces a lattice mismatch between the substrate and the layer of adde d4wide ban d gap bonded cubic boron nitride material.

13.

14.

(Currentl y Amended) The method of claim [[14]] 12 wherein bondi ng the lay er of cubic boron nitride to the top compliant surfaces is done using optical bonding.

A method comprising: implanting hydrogen ions in a diamond substrate to provide a top compliant layer to form a top compliant surface on the diamond substrate; and addin g bonding a layer of cubic boron nitride on the top compliant surface of the hydrogen implanted diamond substrate such that the compliant layer reduces a lattice mismatch between the substrate and the layer of cubic boron nitride.

20.

21.

(Currentl y Amended) The method of claim [[21]] 19 wherein bondi ng the lay er of cubic boron nitride to the top compliant surfaces is done using optical bonding.

AMENDMENT AND RESPONSE UNDER 37 C.F.R § 1.111 Serial Number: 13/410,693 Page 12 Filing Date: Dkt: 1914.021US₂ Title: GALLIUM NITRIDE LIGHT EMITTING DEVICES ON DIAMOND 27. A method comprising: implanting H₂ in a diamond substrate to provide a top compliant layer; grewiin g bonding a layer of p or n doped cubic boron nitride on the H₂ implanted diamond substrate; growing a layer of diamond on the layer of p or n doped cubic boron nitride; implanting H₂ in the grown diamond layer; and growing a layer of n or p doped cubic boron nitride on the H₂ implanted grown diamond layer.

. A method comprising: implanting ions in a diamond substrate to provide a top compliant layer to form a top compliant surface on the diamond substrate; and addini g bonding a layer of wide bandgap material on the top compliant surface of the ion implanted diamond substrate such that the compliant layer reduces a lattice mismatch between the substrate and the layer of g rown bonded wide bandgap material.

4.

5.

The method of claim [[5]] 2 wherein bonding the layer of cubic boron nitride to the top compliant surfaces is done using optical bonding.

A method comprising: forming a top compliant layer in [[a]] an ion i m planted diamond substrate to form a top compliant surface on the diamond substrate; and addini g bonding a layer of wide ban dgap mater ial cubic boron nitride on the top compliant surface of the ion implanted diamond substrate such that the compliant layer reduces a lattice mismatch between the substrate and the layer of adde d4wide ban d gap bonded cubic boron nitride material.

13.

14.

(Currentl y Amended) The method of claim [[14]] 12 wherein bondi ng the lay er of cubic boron nitride to the top compliant surfaces is done using optical bonding.

A method comprising: implanting hydrogen ions in a diamond substrate to provide a top compliant layer to form a top compliant surface on the diamond substrate; and addin g bonding a layer of cubic boron nitride on the top compliant surface of the hydrogen implanted diamond substrate such that the compliant layer reduces a lattice mismatch between the substrate and the layer of cubic boron nitride.

20.

21.

(Currentl y Amended) The method of claim [[21]] 19 wherein bondi ng the lay er of cubic boron nitride to the top compliant surfaces is done using optical bonding.

AMENDMENT AND RESPONSE UNDER 37 C.F.R § 1.111 Serial Number: 13/410,693 Page 12 Filing Date: Dkt: 1914.021US₂ Title: GALLIUM NITRIDE LIGHT EMITTING DEVICES ON DIAMOND 27. A method comprising: implanting H₂ in a diamond substrate to provide a top compliant layer; grewiin g bonding a layer of p or n doped cubic boron nitride on the H₂ implanted diamond substrate; growing a layer of diamond on the layer of p or n doped cubic boron nitride; implanting H₂ in the grown diamond layer; and growing a layer of n or p doped cubic boron nitride on the H₂ implanted grown diamond layer.

. A method comprising: implanting ions in a diamond substrate to provide a top compliant layer to form a top compliant surface on the diamond substrate; and addini g bonding a layer of wide bandgap material on the top compliant surface of the ion implanted diamond substrate such that the compliant layer reduces a lattice mismatch between the substrate and the layer of g rown bonded wide bandgap material.

4.

5.

The method of claim [[5]] 2 wherein bonding the layer of cubic boron nitride to the top compliant surfaces is done using optical bonding.

A method comprising: forming a top compliant layer in [[a]] an ion i m planted diamond substrate to form a top compliant surface on the diamond substrate; and addini g bonding a layer of wide ban dgap mater ial cubic boron nitride on the top compliant surface of the ion implanted diamond substrate such that the compliant layer reduces a lattice mismatch between the substrate and the layer of adde d4wide ban d gap bonded cubic boron nitride material.

13.

14.

(Currentl y Amended) The method of claim [[14]] 12 wherein bondi ng the lay er of cubic boron nitride to the top compliant surfaces is done using optical bonding.

A method comprising: implanting hydrogen ions in a diamond substrate to provide a top compliant layer to form a top compliant surface on the diamond substrate; and addin g bonding a layer of cubic boron nitride on the top compliant surface of the hydrogen implanted diamond substrate such that the compliant layer reduces a lattice mismatch between the substrate and the layer of cubic boron nitride.

20.

21.

(Currentl y Amended) The method of claim [[21]] 19 wherein bondi ng the lay er of cubic boron nitride to the top compliant surfaces is done using optical bonding.

AMENDMENT AND RESPONSE UNDER 37 C.F.R § 1.111 Serial Number: 13/410,693 Page 12 Filing Date: Dkt: 1914.021US₂ Title: GALLIUM NITRIDE LIGHT EMITTING DEVICES ON DIAMOND 27. A method comprising: implanting H₂ in a diamond substrate to provide a top compliant layer; grewiin g bonding a layer of p or n doped cubic boron nitride on the H₂ implanted diamond substrate; growing a layer of diamond on the layer of p or n doped cubic boron nitride; implanting H₂ in the grown diamond layer; and growing a layer of n or p doped cubic boron nitride on the H₂ implanted grown diamond layer.