Patent
US 8,945,966SEMICONDUCTOR DEVICES HAVING GALLIUM NITRIDE EPILAYERS ON DIAMOND SUBSTRATES
Daniel Francis
US
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US 8,945,966Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 7C. The surface 708 of the layered structure 702 is now 25 revealed. The new structure is denoted with 740. 26 Figure 7E shows the fifth step D₅ of Method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
CLAIMS 1 Claims 1-31 canceled
1 32. A method of manufacturing a semiconductor device comprising the steps of: 2 (a) providing a first layered structure layer, said first layered structure layer 3 including at least one layer including a wide-gap semiconductor material; 4 (b) depositing a nucleating layer over at least a portion of said first layered 5 structure layer, wherein said nucleating layer is formed from a material 6 selected from the group consisting of polycrystalline material, amorphous 7 material, and mixtures thereof; 8 (c) depositing a synthetic diamond layer over said nucleating layer; and 9 (d) depositing a second layered structure layer over said first layered structur c 10 layer, said second layered structure layer including at least one layer 11 including said wide-gap semiconductor mat e rial.
1 33. The method of claim 32, wherein said first layered structure layer has a first 2 growth direction, said second layered structure layer has a second growth direction opposite to 3 the first growth direction, and said synthetic diamond layer has the first growth direction.
1 35. The method of claim 32, wherein said nucleating layer includes silicon nitride.
1 36. The method of claim 32, wherein said nucleating layer includes atoms selected 2 from the group consisting of silicon, nitrogen, carbon, and aluminum.
1 38. The method of claim 32, wherein said nucleating layer includes atoms selected 2 from the group consisting of silicon, nitrogen, carbon, and aluminum.
1 53. The method of claim 32, wherein said nucleating layer is polycrystalline silicon. 703799942 v1
1 41. A method of manufacturing a semiconductor device comprising the steps of: 2 (a) providing a wafer including a substrate layer and a fi rst layered structure 3 layer disposed over said substrate layer, said f irst layered structure layer 4 including at least one layer including a wide-gap semiconductor material; 5 (b) depositing a nucleating layer over said first layered structure layer, 6 wherein said nucleating layer is formed from a material selected from the 7 group consisting of polycrystalline material, amorphous material, and 8 mixtures thereof; 9 (c) depositing a synthetic diamond layer over said nucleating layer; and 10 (d) removing said substrate layer.
1 42. The method of claim 41, wherein said nucleating layer includes silicon nitride.
1 43. The method of claim 41, wherein said nucleating layer includes polycrys t alline 2 silicon.
1 46. The method of claim 41, wherein said nucleating layer includes atoms selected 2 from the group consisting of silicon, nitrogen, carbon, and aluminum.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with wide-gap semiconductor and synthetic diamond layer
high-electron mobility transistor (HEMT)
No layer stack recorded.
super-luminescent diode
No layer stack recorded.
laser diode
No layer stack recorded.
light-emitting diode
No layer stack recorded.
Materials described outside the worked examples.
wide-gap semiconductor material
nucleating layer material (polycrystalline/amorphous, Si/N/C/Al atoms)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 1 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,945,966Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 7C. The surface 708 of the layered structure 702 is now 25 revealed. The new structure is denoted with 740. 26 Figure 7E shows the fifth step D₅ of Method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
CLAIMS 1 Claims 1-31 canceled
1 32. A method of manufacturing a semiconductor device comprising the steps of: 2 (a) providing a first layered structure layer, said first layered structure layer 3 including at least one layer including a wide-gap semiconductor material; 4 (b) depositing a nucleating layer over at least a portion of said first layered 5 structure layer, wherein said nucleating layer is formed from a material 6 selected from the group consisting of polycrystalline material, amorphous 7 material, and mixtures thereof; 8 (c) depositing a synthetic diamond layer over said nucleating layer; and 9 (d) depositing a second layered structure layer over said first layered structur c 10 layer, said second layered structure layer including at least one layer 11 including said wide-gap semiconductor mat e rial.
1 33. The method of claim 32, wherein said first layered structure layer has a first 2 growth direction, said second layered structure layer has a second growth direction opposite to 3 the first growth direction, and said synthetic diamond layer has the first growth direction.
1 35. The method of claim 32, wherein said nucleating layer includes silicon nitride.
1 36. The method of claim 32, wherein said nucleating layer includes atoms selected 2 from the group consisting of silicon, nitrogen, carbon, and aluminum.
1 38. The method of claim 32, wherein said nucleating layer includes atoms selected 2 from the group consisting of silicon, nitrogen, carbon, and aluminum.
1 53. The method of claim 32, wherein said nucleating layer is polycrystalline silicon. 703799942 v1
1 41. A method of manufacturing a semiconductor device comprising the steps of: 2 (a) providing a wafer including a substrate layer and a fi rst layered structure 3 layer disposed over said substrate layer, said f irst layered structure layer 4 including at least one layer including a wide-gap semiconductor material; 5 (b) depositing a nucleating layer over said first layered structure layer, 6 wherein said nucleating layer is formed from a material selected from the 7 group consisting of polycrystalline material, amorphous material, and 8 mixtures thereof; 9 (c) depositing a synthetic diamond layer over said nucleating layer; and 10 (d) removing said substrate layer.
1 42. The method of claim 41, wherein said nucleating layer includes silicon nitride.
1 43. The method of claim 41, wherein said nucleating layer includes polycrys t alline 2 silicon.
1 46. The method of claim 41, wherein said nucleating layer includes atoms selected 2 from the group consisting of silicon, nitrogen, carbon, and aluminum.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with wide-gap semiconductor and synthetic diamond layer
high-electron mobility transistor (HEMT)
No layer stack recorded.
super-luminescent diode
No layer stack recorded.
laser diode
No layer stack recorded.
light-emitting diode
No layer stack recorded.
Materials described outside the worked examples.
wide-gap semiconductor material
nucleating layer material (polycrystalline/amorphous, Si/N/C/Al atoms)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 1 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,945,966Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 7C. The surface 708 of the layered structure 702 is now 25 revealed. The new structure is denoted with 740. 26 Figure 7E shows the fifth step D₅ of Method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
CLAIMS 1 Claims 1-31 canceled
1 32. A method of manufacturing a semiconductor device comprising the steps of: 2 (a) providing a first layered structure layer, said first layered structure layer 3 including at least one layer including a wide-gap semiconductor material; 4 (b) depositing a nucleating layer over at least a portion of said first layered 5 structure layer, wherein said nucleating layer is formed from a material 6 selected from the group consisting of polycrystalline material, amorphous 7 material, and mixtures thereof; 8 (c) depositing a synthetic diamond layer over said nucleating layer; and 9 (d) depositing a second layered structure layer over said first layered structur c 10 layer, said second layered structure layer including at least one layer 11 including said wide-gap semiconductor mat e rial.
1 33. The method of claim 32, wherein said first layered structure layer has a first 2 growth direction, said second layered structure layer has a second growth direction opposite to 3 the first growth direction, and said synthetic diamond layer has the first growth direction.
1 35. The method of claim 32, wherein said nucleating layer includes silicon nitride.
1 36. The method of claim 32, wherein said nucleating layer includes atoms selected 2 from the group consisting of silicon, nitrogen, carbon, and aluminum.
1 38. The method of claim 32, wherein said nucleating layer includes atoms selected 2 from the group consisting of silicon, nitrogen, carbon, and aluminum.
1 53. The method of claim 32, wherein said nucleating layer is polycrystalline silicon. 703799942 v1
1 41. A method of manufacturing a semiconductor device comprising the steps of: 2 (a) providing a wafer including a substrate layer and a fi rst layered structure 3 layer disposed over said substrate layer, said f irst layered structure layer 4 including at least one layer including a wide-gap semiconductor material; 5 (b) depositing a nucleating layer over said first layered structure layer, 6 wherein said nucleating layer is formed from a material selected from the 7 group consisting of polycrystalline material, amorphous material, and 8 mixtures thereof; 9 (c) depositing a synthetic diamond layer over said nucleating layer; and 10 (d) removing said substrate layer.
1 42. The method of claim 41, wherein said nucleating layer includes silicon nitride.
1 43. The method of claim 41, wherein said nucleating layer includes polycrys t alline 2 silicon.
1 46. The method of claim 41, wherein said nucleating layer includes atoms selected 2 from the group consisting of silicon, nitrogen, carbon, and aluminum.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with wide-gap semiconductor and synthetic diamond layer
high-electron mobility transistor (HEMT)
No layer stack recorded.
super-luminescent diode
No layer stack recorded.
laser diode
No layer stack recorded.
light-emitting diode
No layer stack recorded.
Materials described outside the worked examples.
wide-gap semiconductor material
nucleating layer material (polycrystalline/amorphous, Si/N/C/Al atoms)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 1 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,945,966Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 7C. The surface 708 of the layered structure 702 is now 25 revealed. The new structure is denoted with 740. 26 Figure 7E shows the fifth step D₅ of Method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
CLAIMS 1 Claims 1-31 canceled
1 32. A method of manufacturing a semiconductor device comprising the steps of: 2 (a) providing a first layered structure layer, said first layered structure layer 3 including at least one layer including a wide-gap semiconductor material; 4 (b) depositing a nucleating layer over at least a portion of said first layered 5 structure layer, wherein said nucleating layer is formed from a material 6 selected from the group consisting of polycrystalline material, amorphous 7 material, and mixtures thereof; 8 (c) depositing a synthetic diamond layer over said nucleating layer; and 9 (d) depositing a second layered structure layer over said first layered structur c 10 layer, said second layered structure layer including at least one layer 11 including said wide-gap semiconductor mat e rial.
1 33. The method of claim 32, wherein said first layered structure layer has a first 2 growth direction, said second layered structure layer has a second growth direction opposite to 3 the first growth direction, and said synthetic diamond layer has the first growth direction.
1 35. The method of claim 32, wherein said nucleating layer includes silicon nitride.
1 36. The method of claim 32, wherein said nucleating layer includes atoms selected 2 from the group consisting of silicon, nitrogen, carbon, and aluminum.
1 38. The method of claim 32, wherein said nucleating layer includes atoms selected 2 from the group consisting of silicon, nitrogen, carbon, and aluminum.
1 53. The method of claim 32, wherein said nucleating layer is polycrystalline silicon. 703799942 v1
1 41. A method of manufacturing a semiconductor device comprising the steps of: 2 (a) providing a wafer including a substrate layer and a fi rst layered structure 3 layer disposed over said substrate layer, said f irst layered structure layer 4 including at least one layer including a wide-gap semiconductor material; 5 (b) depositing a nucleating layer over said first layered structure layer, 6 wherein said nucleating layer is formed from a material selected from the 7 group consisting of polycrystalline material, amorphous material, and 8 mixtures thereof; 9 (c) depositing a synthetic diamond layer over said nucleating layer; and 10 (d) removing said substrate layer.
1 42. The method of claim 41, wherein said nucleating layer includes silicon nitride.
1 43. The method of claim 41, wherein said nucleating layer includes polycrys t alline 2 silicon.
1 46. The method of claim 41, wherein said nucleating layer includes atoms selected 2 from the group consisting of silicon, nitrogen, carbon, and aluminum.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with wide-gap semiconductor and synthetic diamond layer
high-electron mobility transistor (HEMT)
No layer stack recorded.
super-luminescent diode
No layer stack recorded.
laser diode
No layer stack recorded.
light-emitting diode
No layer stack recorded.
Materials described outside the worked examples.
wide-gap semiconductor material
nucleating layer material (polycrystalline/amorphous, Si/N/C/Al atoms)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 1 nm | — |
Related documents with shared materials, methods, properties, or citations.
semiconductor laser
No layer stack recorded.
synthetic diamond
C
silicon nitride
Si₃N₄
gallium nitride
GaN
polycrystalline silicon
Si
aluminum nitride
AlN
silicon carbide
SiC
zinc oxide
ZnO
semiconductor laser
No layer stack recorded.
synthetic diamond
C
silicon nitride
Si₃N₄
gallium nitride
GaN
polycrystalline silicon
Si
aluminum nitride
AlN
silicon carbide
SiC
zinc oxide
ZnO
semiconductor laser
No layer stack recorded.
synthetic diamond
C
silicon nitride
Si₃N₄
gallium nitride
GaN
polycrystalline silicon
Si
aluminum nitride
AlN
silicon carbide
SiC
zinc oxide
ZnO
semiconductor laser
No layer stack recorded.
synthetic diamond
C
silicon nitride
Si₃N₄
gallium nitride
GaN
polycrystalline silicon
Si
aluminum nitride
AlN
silicon carbide
SiC
zinc oxide
ZnO