Patent
US 8,575,657DIRECT GROWTH OF DIAMOND IN BACKSIDE VIAS FOR GaN HEMT DEVICES
Vincent Gambin
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,575,657Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a cross-sectional profile view of a portion of a wafer including GaN HEMT devices each having a diamond via extending completely through a substrate of the wafer;
Figure 2 is a cross-sectional profile view of a GaN HEMT device including a diamond via extending partially through a substrate of the device;
Figure 3 is a cross-sectional profile view of a GaN HEMT device including a diamond via extending through a substrate and into one or more epitaxial layers of the device; and
Figure 4 is a cross-sectional profile view of a GaN HEMT device including a diamond layer formed in a via in a substrate of the device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate, wherein diamond is provided at least partially within the via in the substrate; a plurality of GaN epitaxial layers pr o vided grown directly on the top surface of the substrate; and a plurality of device layers provided grown on the epitaxial layers.
The device according to claim 1 wherein the diamond is provided only within the via.
The device according to claim 1 wherein the diamond is provided as a layer on the bottom surface of the substrate.
The device according to claim 1 wherein the diamond completely fills the via.
The device according to claim 1 wherein the diamond only partially fills the via.
The device according to claim 1 wherein the via extends completely through the substrate.
The device according to claim 1 wherein the via extends only partially through the substrate.
The device according to claim 1 wherein the device is a GaN high electron mobility transistor device and the substrate is a silicon carbide substrate.
The device according to claim 1 wherein the diamond is multiple diamond layers of different diamond purity where the highest purity diamond layers are closest to the top surface of the substrate.
The device according to claim 1 wherein the diamond is a graded diamond layer that is graded by diamond purity where the highest purity diamond is closest to the top surface of the substrate.
The device according to claim 1 wherein the via has a width about the same size as a width of the device layers.
The device according to claim 1 wherein the diamond is a polycrystalline diamond.
canceled
A GaN high electron mobility transistor (HEMT) device comprising: a silicon carbide substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate; a plurality of Ga N epitaxial layers p Feyi ded g rown directly on the top surface of the substrate; a plurality of device layers p Fev ided grown on the epitaxial layers; and a diamond layer provided within the via.
The device according to claim 14 wherein the via has a width about the same size as a width of the device layers.
The device according to claim 14 wherein the diamond layer is a polycrystalline diamond layer.
The device according to claim 14 wherein the diamond layer is provided only within the via.
The device according to claim 14 wherein the diamond layer is provided as a layer on the bottom surface of the substrate.
The device according to claim 14 wherein the diamond layer completely fills the via.
The device according to claim 14 wherein the diamond layer only partially fills the via.
A semiconductor device comprising: a substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate, wherein diamond is provided within the via in the substrate; a plurality of GaN epitaxial layers grown directly on the top surface of the substrate, wherein the via extends completely through the substrate and into at least one of the epitaxial layers; and a plurality of device layers grown on the epitaxial layers.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with diamond-filled via
GaN HEMT device with diamond-filled via
Materials described outside the worked examples.
diamond
C
GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,575,657Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a cross-sectional profile view of a portion of a wafer including GaN HEMT devices each having a diamond via extending completely through a substrate of the wafer;
Figure 2 is a cross-sectional profile view of a GaN HEMT device including a diamond via extending partially through a substrate of the device;
Figure 3 is a cross-sectional profile view of a GaN HEMT device including a diamond via extending through a substrate and into one or more epitaxial layers of the device; and
Figure 4 is a cross-sectional profile view of a GaN HEMT device including a diamond layer formed in a via in a substrate of the device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate, wherein diamond is provided at least partially within the via in the substrate; a plurality of GaN epitaxial layers pr o vided grown directly on the top surface of the substrate; and a plurality of device layers provided grown on the epitaxial layers.
The device according to claim 1 wherein the diamond is provided only within the via.
The device according to claim 1 wherein the diamond is provided as a layer on the bottom surface of the substrate.
The device according to claim 1 wherein the diamond completely fills the via.
The device according to claim 1 wherein the diamond only partially fills the via.
The device according to claim 1 wherein the via extends completely through the substrate.
The device according to claim 1 wherein the via extends only partially through the substrate.
The device according to claim 1 wherein the device is a GaN high electron mobility transistor device and the substrate is a silicon carbide substrate.
The device according to claim 1 wherein the diamond is multiple diamond layers of different diamond purity where the highest purity diamond layers are closest to the top surface of the substrate.
The device according to claim 1 wherein the diamond is a graded diamond layer that is graded by diamond purity where the highest purity diamond is closest to the top surface of the substrate.
The device according to claim 1 wherein the via has a width about the same size as a width of the device layers.
The device according to claim 1 wherein the diamond is a polycrystalline diamond.
canceled
A GaN high electron mobility transistor (HEMT) device comprising: a silicon carbide substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate; a plurality of Ga N epitaxial layers p Feyi ded g rown directly on the top surface of the substrate; a plurality of device layers p Fev ided grown on the epitaxial layers; and a diamond layer provided within the via.
The device according to claim 14 wherein the via has a width about the same size as a width of the device layers.
The device according to claim 14 wherein the diamond layer is a polycrystalline diamond layer.
The device according to claim 14 wherein the diamond layer is provided only within the via.
The device according to claim 14 wherein the diamond layer is provided as a layer on the bottom surface of the substrate.
The device according to claim 14 wherein the diamond layer completely fills the via.
The device according to claim 14 wherein the diamond layer only partially fills the via.
A semiconductor device comprising: a substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate, wherein diamond is provided within the via in the substrate; a plurality of GaN epitaxial layers grown directly on the top surface of the substrate, wherein the via extends completely through the substrate and into at least one of the epitaxial layers; and a plurality of device layers grown on the epitaxial layers.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with diamond-filled via
GaN HEMT device with diamond-filled via
Materials described outside the worked examples.
diamond
C
GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,575,657Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a cross-sectional profile view of a portion of a wafer including GaN HEMT devices each having a diamond via extending completely through a substrate of the wafer;
Figure 2 is a cross-sectional profile view of a GaN HEMT device including a diamond via extending partially through a substrate of the device;
Figure 3 is a cross-sectional profile view of a GaN HEMT device including a diamond via extending through a substrate and into one or more epitaxial layers of the device; and
Figure 4 is a cross-sectional profile view of a GaN HEMT device including a diamond layer formed in a via in a substrate of the device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate, wherein diamond is provided at least partially within the via in the substrate; a plurality of GaN epitaxial layers pr o vided grown directly on the top surface of the substrate; and a plurality of device layers provided grown on the epitaxial layers.
The device according to claim 1 wherein the diamond is provided only within the via.
The device according to claim 1 wherein the diamond is provided as a layer on the bottom surface of the substrate.
The device according to claim 1 wherein the diamond completely fills the via.
The device according to claim 1 wherein the diamond only partially fills the via.
The device according to claim 1 wherein the via extends completely through the substrate.
The device according to claim 1 wherein the via extends only partially through the substrate.
The device according to claim 1 wherein the device is a GaN high electron mobility transistor device and the substrate is a silicon carbide substrate.
The device according to claim 1 wherein the diamond is multiple diamond layers of different diamond purity where the highest purity diamond layers are closest to the top surface of the substrate.
The device according to claim 1 wherein the diamond is a graded diamond layer that is graded by diamond purity where the highest purity diamond is closest to the top surface of the substrate.
The device according to claim 1 wherein the via has a width about the same size as a width of the device layers.
The device according to claim 1 wherein the diamond is a polycrystalline diamond.
canceled
A GaN high electron mobility transistor (HEMT) device comprising: a silicon carbide substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate; a plurality of Ga N epitaxial layers p Feyi ded g rown directly on the top surface of the substrate; a plurality of device layers p Fev ided grown on the epitaxial layers; and a diamond layer provided within the via.
The device according to claim 14 wherein the via has a width about the same size as a width of the device layers.
The device according to claim 14 wherein the diamond layer is a polycrystalline diamond layer.
The device according to claim 14 wherein the diamond layer is provided only within the via.
The device according to claim 14 wherein the diamond layer is provided as a layer on the bottom surface of the substrate.
The device according to claim 14 wherein the diamond layer completely fills the via.
The device according to claim 14 wherein the diamond layer only partially fills the via.
A semiconductor device comprising: a substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate, wherein diamond is provided within the via in the substrate; a plurality of GaN epitaxial layers grown directly on the top surface of the substrate, wherein the via extends completely through the substrate and into at least one of the epitaxial layers; and a plurality of device layers grown on the epitaxial layers.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with diamond-filled via
GaN HEMT device with diamond-filled via
Materials described outside the worked examples.
diamond
C
GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,575,657Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a cross-sectional profile view of a portion of a wafer including GaN HEMT devices each having a diamond via extending completely through a substrate of the wafer;
Figure 2 is a cross-sectional profile view of a GaN HEMT device including a diamond via extending partially through a substrate of the device;
Figure 3 is a cross-sectional profile view of a GaN HEMT device including a diamond via extending through a substrate and into one or more epitaxial layers of the device; and
Figure 4 is a cross-sectional profile view of a GaN HEMT device including a diamond layer formed in a via in a substrate of the device.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate, wherein diamond is provided at least partially within the via in the substrate; a plurality of GaN epitaxial layers pr o vided grown directly on the top surface of the substrate; and a plurality of device layers provided grown on the epitaxial layers.
The device according to claim 1 wherein the diamond is provided only within the via.
The device according to claim 1 wherein the diamond is provided as a layer on the bottom surface of the substrate.
The device according to claim 1 wherein the diamond completely fills the via.
The device according to claim 1 wherein the diamond only partially fills the via.
The device according to claim 1 wherein the via extends completely through the substrate.
The device according to claim 1 wherein the via extends only partially through the substrate.
The device according to claim 1 wherein the device is a GaN high electron mobility transistor device and the substrate is a silicon carbide substrate.
The device according to claim 1 wherein the diamond is multiple diamond layers of different diamond purity where the highest purity diamond layers are closest to the top surface of the substrate.
The device according to claim 1 wherein the diamond is a graded diamond layer that is graded by diamond purity where the highest purity diamond is closest to the top surface of the substrate.
The device according to claim 1 wherein the via has a width about the same size as a width of the device layers.
The device according to claim 1 wherein the diamond is a polycrystalline diamond.
canceled
A GaN high electron mobility transistor (HEMT) device comprising: a silicon carbide substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate; a plurality of Ga N epitaxial layers p Feyi ded g rown directly on the top surface of the substrate; a plurality of device layers p Fev ided grown on the epitaxial layers; and a diamond layer provided within the via.
The device according to claim 14 wherein the via has a width about the same size as a width of the device layers.
The device according to claim 14 wherein the diamond layer is a polycrystalline diamond layer.
The device according to claim 14 wherein the diamond layer is provided only within the via.
The device according to claim 14 wherein the diamond layer is provided as a layer on the bottom surface of the substrate.
The device according to claim 14 wherein the diamond layer completely fills the via.
The device according to claim 14 wherein the diamond layer only partially fills the via.
A semiconductor device comprising: a substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate, wherein diamond is provided within the via in the substrate; a plurality of GaN epitaxial layers grown directly on the top surface of the substrate, wherein the via extends completely through the substrate and into at least one of the epitaxial layers; and a plurality of device layers grown on the epitaxial layers.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with diamond-filled via
GaN HEMT device with diamond-filled via
Materials described outside the worked examples.
diamond
C
GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
semiconductor device with diamond-filled via extending into epitaxial layers
GaN HEMT device (detailed description embodiment)
substrate
silicon carbide
SiC
AlN nucleation layer
AlN
AlGaN barrier layer
AlGaN
silicon nitride
SiN
AlN BUFFER N-POLAR GaN HEMT PROFILE
semiconductor device with diamond-filled via extending into epitaxial layers
GaN HEMT device (detailed description embodiment)
substrate
silicon carbide
SiC
AlN nucleation layer
AlN
AlGaN barrier layer
AlGaN
silicon nitride
SiN
AlN BUFFER N-POLAR GaN HEMT PROFILE
semiconductor device with diamond-filled via extending into epitaxial layers
GaN HEMT device (detailed description embodiment)
substrate
silicon carbide
SiC
AlN nucleation layer
AlN
AlGaN barrier layer
AlGaN
silicon nitride
SiN
AlN BUFFER N-POLAR GaN HEMT PROFILE
semiconductor device with diamond-filled via extending into epitaxial layers
GaN HEMT device (detailed description embodiment)
substrate
silicon carbide
SiC
AlN nucleation layer
AlN
AlGaN barrier layer
AlGaN
silicon nitride
SiN