AlN BUFFER N-POLAR GaN HEMT PROFILE

Vincent Gambin

Patent

Atlas literature

Patent

US 8,710,511

AlN BUFFER N-POLAR GaN HEMT PROFILE

Vincent Gambin, Xing Gu, Benjamin Heying

2014-04-29·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 17 dependent

1
IndependentGaNbuffer layer including aluminumbarrier layer including aluminumsubstrateN-face GaN semiconductor device
An N-face GaN semiconductor device comprising: a substrate; a buﬀer layer including aluminum deposited on the substrate; a barrier layer including aluminum deposited on the buﬀer layer; and a GaN channel layer deposited on the barrier layer, where the channel layer, the barrier layer and the buﬀer layer create a two-dimensional electron gas (2-DEG) layer at a transition between the channel layer and the barrier layer.
1. 2
  Dependent← claim 1AlNN-face GaN semiconductor device
  The device according to claim 1 wherein the buﬀer layer is an AIN buﬀer layer.
2. 3
  Dependent← claim 1AlGaNN-face GaN semiconductor device
  The device according to claim 1 wherein the buﬀer layer is an AIGaN buﬀer layer.
3. 4
  Dependent← claim 1AlGaNN-face GaN semiconductor device
  The device according to claim 1 wherein the barrier layer is an AIGaN barrier layer.
4. 6
  Dependent← claim 1AlNN-face GaN semiconductor device
  The device according to claim 1 wherein the barrier layer is an 2 Serial No. 13/194,213 Docket No. NGC-00135(004878-804) AIN barrier layer.
5. 7
  Dependent← claim 1N-face GaN high electron mobility transistor (HEMT)
  The device according to claim 1 wherein the semiconductor device is a high electron mobility transistor (HEMT) device.
6. 8
  Dependent← claim 1SiCN-face GaN semiconductor device
  The device according to claim 1 wherein the substrate is a silicon carbide (SiC) substrate.
9
IndependentGaNbuffer layer including aluminumbarrier layer including aluminumsubstrateSiCN-face GaN high electron mobility transistor (HEMT)
An N-face GaN high electron mobility transistor (HE MT) device comprising: a silicon carbide (SiC) substrate; a buﬀer layer including aluminum deposited on the substrate; a barrier layer including aluminum deposited on the buﬀer layer; and a GaN channel layer deposited on the barrier layer, where the channel layer, the barrier layer and the buﬀer layer create a two-dimensional electron gas (2-DEG) layer at a transition between the channel layer and the barrier layer.
1. 10
  Dependent← claim 9AlNN-face GaN high electron mobility transistor (HEMT)
  The device according to claim 9 wherein the buﬀer layer is an AIN buﬀer layer.
2. 11
  Dependent← claim 9AlGaNN-face GaN high electron mobility transistor (HEMT)
  The device according to claim 9 wherein the buﬀer layer is an AIGaN buﬀer layer.
3. 12
  Dependent← claim 9AlGaNN-face GaN high electron mobility transistor (HEMT)
  The device according to claim 9 wherein the barrier layer is an AIGaN barrier layer.
4. 14
  Dependent← claim 9AlNN-face GaN high electron mobility transistor (HEMT)
  The device according to claim 9 wherein the barrier layer is an AIN barrier layer.
15
IndependentGaNbuffer layer including aluminumbarrier layer including aluminumsubstrateN-face GaN semiconductor device
A method for forming an N-face GaN semiconductor device, said method comprising: providing a substrate; SVG 13194213.12-12-2013.HP₄JUYXGPXXIFW3.CLM.1.svg 0.16 5.5 Black and white creates an N-face oriented device where the buﬀer layer includes aluminum; SVG 13194213.12-12-2013.HP₄JUYXGPXXIFW3.CLM.2.svg 0.16 5.51 Black and white layer; and SVG 13194213.12-12-2013.HP₄JUYXGPXXIFW3.CLM.3.svg 0.16 5.5 Black and white the channel layer, the barrier layer and the buﬀer layer create a two-dimensional electron gas (2-DEG) layer at a transition between the channel layer and the barrier layer.
1. 16
  Dependent← claim 15
  The method according to claim 15 wherein SVG 13194213.12-12-2013.HP₄JUYXGPXXIFW3.CLM.4.svg 0.17 6.49 Black and white buﬀered layer.
2. 17
  Dependent← claim 15AlGaN
  17. The method according to claim 15 wherein SVG 13194213.12-12-2013.HP₄JUYXGPXXIFW3.CLM.5.svg 0.17 6.56 Black and white AIGaN buﬀer layer.
3. 18
  Dependent← claim 15AlGaN
  The method according to claim 15 wherein SVG 13194213.12-12-2013.HP₄JUYXGPXXIFW3.CLM.6.svg 0.16 6.5 Black and white AI GaN barrier layer.
4. 19
  Dependent← claim 15AlN
  The method according to claim 15 wherein SVG 13194213.12-12-2013.HP₄JUYXGPXXIFW3.CLM.7.svg 0.18 6.5 Black and white AI N barrier layer.
5. 20
  Dependent← claim 15N-face GaN high electron mobility transistor (HEMT)
  The method according to claim 15 wherein the semiconductor device is a high electron mobility transistor (HEMT) device.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

N-face GaN semiconductor device

GaNchannel

barrier layer including aluminumbarrier

buffer layer including aluminumbuffer

substratesubstrate

N-face GaN high electron mobility transistor (HEMT)

GaNchannel

Materials

Materials described outside the worked examples.

GaN channel layer

GaN

Channel

buffer layer including aluminum

Buffer

Why these are connected

Related documents with shared materials, methods, properties, or citations.

AlN BUFFER N-POLAR GaN HEMT PROFILE | Matter42 Literature