Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural view of a material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave devices according to …
FIG. 2 is a schematic structural view of another material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave devices …
FIG. 3 is a schematic structural view of still another material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave devices …
FIG. 4 is a schematic structural view of even still another 60 material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave …
FIG. 5 is a schematic flowchart of a manufacturing method of a material structure for low thermal resistance 65 silicon-based GaN microwave and millimeter-wave …
FIG. 6t are schematic structural views associated with a process of a manufacturing method of a material structure for low thermal resistance silicon-based GaN …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A material structure for silicon-based gallium nitride microwave and millimeter-wave devices, comprising: a silicon substrate; a dielectric layer, disposed on an upper surface of the silicon substrate, wherein an uneven first patterned interface is formed between the dielectric layer and the silicon substrate; a buffer layer, disposed on an upper surface of the dielectric layer, wherein an uneven second patterned interface is formed between the buffer layer and the dielectric layer; a channel layer, disposed on an upper surface of the buffer layer; and a composite barrier layer, disposed on an upper surface of the channel layer; wherein a surface of the silicon substrate disposed with the dielectric layer defines a plurality of first grooves to form the uneven first patterned interface, and the dielectric layer is filled into the plurality of first grooves and in contact with sides and bottoms of the plurality of first grooves; and a surface of the buffer layer provided with the dielectric layer defines a plurality of second grooves to form the uneven second patterned interface, and the dielectric layer is filled into the plurality of second grooves and in contact with sides and bottoms of the plurality of second grooves; and wherein the dielectric layer is a bi-layered structure, and comprises: a first portion and a second portion which are made from a same material and bonded together by wafer bonding; and a side of the first portion is in contact with the surface of the buffer layer, an opposite side of the first portion is in contact with a side of the second portion, and an opposite side of the second portion is in contact with the surface of the silicon substrate.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein a material of the dielectric layer comprises aluminum nitride, boron nitride, silicon carbide or diamond; and a thickness of the dielectric layer is in a range of 20 to 20000 nm.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein a ratio of an area of the plurality of first grooves to an area of the surface of the silicon substrate disposed with the dielectric layer is in a range of 1% to 99%; and a ratio of an area of the plurality of second grooves to an area of the surface of the buffer layer disposed with the dielectric layer is in a range of 1% to 99%.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein a material of the buffer layer comprises gallium nitride, aluminum gallium nitride, or aluminum nitride; a thickness of the buffer layer is in a range of 100 to 5000 nm, a material of the channel layer is gallium nitride, and a thickness of the channel layer is in a range of 10 to 1000 nm.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the composite barrier layer comprises: an isolation layer, disposed on the upper surface of the channel layer; a core barrier layer, disposed on an upper surface of the isolation layer; and a capping layer, disposed on an upper surface of the capping layer.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the composite barrier layer comprises: a core barrier layer, disposed on the upper surface of the channel layer; and 30 a capping layer, disposed on an upper surface of the core barrier layer.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the side of the first portion is filled into the plurality of second grooves to be in contact with the sides and the bottoms of the plurality of second grooves of the buffer layer, and the opposite side of the second portion is filled into the plurality of first grooves to be in contact with the sides and the bottoms of the plurality of first grooves of the silicon substrate.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the buffer layer is an iron (Fe) doped buffer layer, a dislocation density of the buffer layer is 11×109 cm⁻², and a resistivity of the buffer layer is 1 MΩ·cm; the channel layer is an unintentionally doped GaN channel layer, and a thickness of the channel layer is 300 nm; and a size of the silicon substrate is 8 inches, a thickness of the silicon substrate is 725 µm, a resistivity of the silicone substrate is 5000 Ω·cm, and a target crystal orientation of the silicon substrate is [111].
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein shapes of the plurality of first and second grooves each are a rectangle, a depth of the rectangle is 500 nm, and a width of the rectangle is 1 µm; and a ratio of an area of the plurality of first grooves to an area of the surface of the silicon substrate disposed with the dielectric layer is 50%; and a ratio of an area of the plurality of second grooves to an area of the surface of the buffer layer disposed with the dielectric layer is 50%.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the composite barrier layer comprises: an isolation layer, disposed on the upper surface of the channel layer; and a core barrier layer, disposed on an upper surface of the isolation layer.
A material structure for silicon-based gallium nitride microwave and millimeter-wave devices, comprising: a silicon substrate; a dielectric layer, comprising a lower surface and an opposite upper surface, wherein the lower surface is in contact with the silicon substrate; a buffer layer, disposed in contact with the upper surface of the dielectric layer; a channel layer, disposed in contact with the buffer layer; and a composite barrier layer, disposed in contact with the channel layer, and whereby the channel layer is located between the buffer layer and the composite barrier layer; wherein the lower surface of the dielectric layer contact-ing with the silicon substrate and the upper surface of the dielectric layer contacting with the buffer layer both are uneven surfaces, and each of the uneven surfaces is a surface formed with a plurality of grooves; the silicon substrate is filled into the plurality of grooves of the lower surface of the dielectric layer, and in direct contact with side walls and bottoms of the plurality of grooves of the lower surface of the dielectric layer; and the buffer layer is filled into the plurality of grooves of the upper surface of the dielectric layer, and in direct contact with side walls and bottoms of the plurality of grooves of the upper surface of the dielectric layer; and wherein the dielectric layer is a bi-layered structure, and comprises: a first portion and a second portion, which are made from a same material and bonded together by wafer bonding; the lower surface of the dielectric layer is a lower surface of the second portion, and the upper surface of the dielectric layer is an upper surface of the first portion; and an upper surface of the second portion is in contact with a lower surface of the first portion.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 13, wherein the buffer layer is filled into the plurality of grooves of the upper surface of the first portion to be in contact with the side walls and the bottoms of the plurality of grooves of the upper surface of the first portion; and the silicon substrate is filled into the plurality of grooves of the lower surface of the second portion to be in contact with the side walls and the bottoms of the plurality of grooves of the lower surface of the second portion.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 13, wherein the buffer layer is an iron (Fe) doped buffer layer, a dislocation density of the buffer layer is 11×109 cm⁻², and a resistivity of the buffer layer is 1 MΩ·cm; the channel layer is an unintentionally doped GaN channel layer, and a thickness of the channel layer is 300 nm; and a size of the silicon substrate is 8 inches, a thickness of the silicon substrate is 725 µm, a resistivity of the silicone substrate is 5000 Ω·cm, and a target crystal orientation of the silicon substrate is [111].
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 13, wherein a shape of each of the plurality of grooves is a rectangle, a depth of the rectangle is 500 nm, and a width of the rectangle is 1 µm; and a ratio of an area of the plurality of grooves of the lower surface of the dielectric layer to an area of the lower surface of the dielectric layer is 50%; and a ratio of an area of the plurality of grooves of the upper surface of the dielectric layer to the upper surface of the dielectric layer is 50%. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
silicon-based GaN HEMT material structure for microwave and millimeter-wave devices
Materials described outside the worked examples.
silicon substrate
Si
buffer layer
GaN channel layer
GaN
dielectric layer
aluminum nitride
AlN
boron nitride
BN
silicon carbide
SiC
diamond
C
aluminum gallium nitride buffer layer
AlGaN
Fe-doped buffer layer
composite barrier layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
buffer layer resistivity | 1 MΩ·cm | Fe-doped buffer layer |
buffer layer dislocation density | 11000000000 cm⁻² | Fe-doped buffer layer |
silicon substrate resistivity | 5000 Ω·cm | Si |
Thickness | 10–10000 nm | — |
Thickness | 10–30 nm | — |
Thickness | 10–2000 nm | — |
Thickness | 100–5000 nm | — |
Thickness | 10–1000 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Cited non-patent literature · 3
Related documents with shared materials, methods, properties, or citations.
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural view of a material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave devices according to …
FIG. 2 is a schematic structural view of another material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave devices …
FIG. 3 is a schematic structural view of still another material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave devices …
FIG. 4 is a schematic structural view of even still another 60 material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave …
FIG. 5 is a schematic flowchart of a manufacturing method of a material structure for low thermal resistance 65 silicon-based GaN microwave and millimeter-wave …
FIG. 6t are schematic structural views associated with a process of a manufacturing method of a material structure for low thermal resistance silicon-based GaN …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A material structure for silicon-based gallium nitride microwave and millimeter-wave devices, comprising: a silicon substrate; a dielectric layer, disposed on an upper surface of the silicon substrate, wherein an uneven first patterned interface is formed between the dielectric layer and the silicon substrate; a buffer layer, disposed on an upper surface of the dielectric layer, wherein an uneven second patterned interface is formed between the buffer layer and the dielectric layer; a channel layer, disposed on an upper surface of the buffer layer; and a composite barrier layer, disposed on an upper surface of the channel layer; wherein a surface of the silicon substrate disposed with the dielectric layer defines a plurality of first grooves to form the uneven first patterned interface, and the dielectric layer is filled into the plurality of first grooves and in contact with sides and bottoms of the plurality of first grooves; and a surface of the buffer layer provided with the dielectric layer defines a plurality of second grooves to form the uneven second patterned interface, and the dielectric layer is filled into the plurality of second grooves and in contact with sides and bottoms of the plurality of second grooves; and wherein the dielectric layer is a bi-layered structure, and comprises: a first portion and a second portion which are made from a same material and bonded together by wafer bonding; and a side of the first portion is in contact with the surface of the buffer layer, an opposite side of the first portion is in contact with a side of the second portion, and an opposite side of the second portion is in contact with the surface of the silicon substrate.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein a material of the dielectric layer comprises aluminum nitride, boron nitride, silicon carbide or diamond; and a thickness of the dielectric layer is in a range of 20 to 20000 nm.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein a ratio of an area of the plurality of first grooves to an area of the surface of the silicon substrate disposed with the dielectric layer is in a range of 1% to 99%; and a ratio of an area of the plurality of second grooves to an area of the surface of the buffer layer disposed with the dielectric layer is in a range of 1% to 99%.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein a material of the buffer layer comprises gallium nitride, aluminum gallium nitride, or aluminum nitride; a thickness of the buffer layer is in a range of 100 to 5000 nm, a material of the channel layer is gallium nitride, and a thickness of the channel layer is in a range of 10 to 1000 nm.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the composite barrier layer comprises: an isolation layer, disposed on the upper surface of the channel layer; a core barrier layer, disposed on an upper surface of the isolation layer; and a capping layer, disposed on an upper surface of the capping layer.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the composite barrier layer comprises: a core barrier layer, disposed on the upper surface of the channel layer; and 30 a capping layer, disposed on an upper surface of the core barrier layer.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the side of the first portion is filled into the plurality of second grooves to be in contact with the sides and the bottoms of the plurality of second grooves of the buffer layer, and the opposite side of the second portion is filled into the plurality of first grooves to be in contact with the sides and the bottoms of the plurality of first grooves of the silicon substrate.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the buffer layer is an iron (Fe) doped buffer layer, a dislocation density of the buffer layer is 11×109 cm⁻², and a resistivity of the buffer layer is 1 MΩ·cm; the channel layer is an unintentionally doped GaN channel layer, and a thickness of the channel layer is 300 nm; and a size of the silicon substrate is 8 inches, a thickness of the silicon substrate is 725 µm, a resistivity of the silicone substrate is 5000 Ω·cm, and a target crystal orientation of the silicon substrate is [111].
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein shapes of the plurality of first and second grooves each are a rectangle, a depth of the rectangle is 500 nm, and a width of the rectangle is 1 µm; and a ratio of an area of the plurality of first grooves to an area of the surface of the silicon substrate disposed with the dielectric layer is 50%; and a ratio of an area of the plurality of second grooves to an area of the surface of the buffer layer disposed with the dielectric layer is 50%.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the composite barrier layer comprises: an isolation layer, disposed on the upper surface of the channel layer; and a core barrier layer, disposed on an upper surface of the isolation layer.
A material structure for silicon-based gallium nitride microwave and millimeter-wave devices, comprising: a silicon substrate; a dielectric layer, comprising a lower surface and an opposite upper surface, wherein the lower surface is in contact with the silicon substrate; a buffer layer, disposed in contact with the upper surface of the dielectric layer; a channel layer, disposed in contact with the buffer layer; and a composite barrier layer, disposed in contact with the channel layer, and whereby the channel layer is located between the buffer layer and the composite barrier layer; wherein the lower surface of the dielectric layer contact-ing with the silicon substrate and the upper surface of the dielectric layer contacting with the buffer layer both are uneven surfaces, and each of the uneven surfaces is a surface formed with a plurality of grooves; the silicon substrate is filled into the plurality of grooves of the lower surface of the dielectric layer, and in direct contact with side walls and bottoms of the plurality of grooves of the lower surface of the dielectric layer; and the buffer layer is filled into the plurality of grooves of the upper surface of the dielectric layer, and in direct contact with side walls and bottoms of the plurality of grooves of the upper surface of the dielectric layer; and wherein the dielectric layer is a bi-layered structure, and comprises: a first portion and a second portion, which are made from a same material and bonded together by wafer bonding; the lower surface of the dielectric layer is a lower surface of the second portion, and the upper surface of the dielectric layer is an upper surface of the first portion; and an upper surface of the second portion is in contact with a lower surface of the first portion.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 13, wherein the buffer layer is filled into the plurality of grooves of the upper surface of the first portion to be in contact with the side walls and the bottoms of the plurality of grooves of the upper surface of the first portion; and the silicon substrate is filled into the plurality of grooves of the lower surface of the second portion to be in contact with the side walls and the bottoms of the plurality of grooves of the lower surface of the second portion.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 13, wherein the buffer layer is an iron (Fe) doped buffer layer, a dislocation density of the buffer layer is 11×109 cm⁻², and a resistivity of the buffer layer is 1 MΩ·cm; the channel layer is an unintentionally doped GaN channel layer, and a thickness of the channel layer is 300 nm; and a size of the silicon substrate is 8 inches, a thickness of the silicon substrate is 725 µm, a resistivity of the silicone substrate is 5000 Ω·cm, and a target crystal orientation of the silicon substrate is [111].
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 13, wherein a shape of each of the plurality of grooves is a rectangle, a depth of the rectangle is 500 nm, and a width of the rectangle is 1 µm; and a ratio of an area of the plurality of grooves of the lower surface of the dielectric layer to an area of the lower surface of the dielectric layer is 50%; and a ratio of an area of the plurality of grooves of the upper surface of the dielectric layer to the upper surface of the dielectric layer is 50%. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
silicon-based GaN HEMT material structure for microwave and millimeter-wave devices
Materials described outside the worked examples.
silicon substrate
Si
buffer layer
GaN channel layer
GaN
dielectric layer
aluminum nitride
AlN
boron nitride
BN
silicon carbide
SiC
diamond
C
aluminum gallium nitride buffer layer
AlGaN
Fe-doped buffer layer
composite barrier layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
buffer layer resistivity | 1 MΩ·cm | Fe-doped buffer layer |
buffer layer dislocation density | 11000000000 cm⁻² | Fe-doped buffer layer |
silicon substrate resistivity | 5000 Ω·cm | Si |
Thickness | 10–10000 nm | — |
Thickness | 10–30 nm | — |
Thickness | 10–2000 nm | — |
Thickness | 100–5000 nm | — |
Thickness | 10–1000 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Cited non-patent literature · 3
Related documents with shared materials, methods, properties, or citations.
SELF-ALIGNED GALLIUM NITRIDE FINFET AND METHOD OF FABRICATING THE SAME
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural view of a material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave devices according to …
FIG. 2 is a schematic structural view of another material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave devices …
FIG. 3 is a schematic structural view of still another material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave devices …
FIG. 4 is a schematic structural view of even still another 60 material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave …
FIG. 5 is a schematic flowchart of a manufacturing method of a material structure for low thermal resistance 65 silicon-based GaN microwave and millimeter-wave …
FIG. 6t are schematic structural views associated with a process of a manufacturing method of a material structure for low thermal resistance silicon-based GaN …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A material structure for silicon-based gallium nitride microwave and millimeter-wave devices, comprising: a silicon substrate; a dielectric layer, disposed on an upper surface of the silicon substrate, wherein an uneven first patterned interface is formed between the dielectric layer and the silicon substrate; a buffer layer, disposed on an upper surface of the dielectric layer, wherein an uneven second patterned interface is formed between the buffer layer and the dielectric layer; a channel layer, disposed on an upper surface of the buffer layer; and a composite barrier layer, disposed on an upper surface of the channel layer; wherein a surface of the silicon substrate disposed with the dielectric layer defines a plurality of first grooves to form the uneven first patterned interface, and the dielectric layer is filled into the plurality of first grooves and in contact with sides and bottoms of the plurality of first grooves; and a surface of the buffer layer provided with the dielectric layer defines a plurality of second grooves to form the uneven second patterned interface, and the dielectric layer is filled into the plurality of second grooves and in contact with sides and bottoms of the plurality of second grooves; and wherein the dielectric layer is a bi-layered structure, and comprises: a first portion and a second portion which are made from a same material and bonded together by wafer bonding; and a side of the first portion is in contact with the surface of the buffer layer, an opposite side of the first portion is in contact with a side of the second portion, and an opposite side of the second portion is in contact with the surface of the silicon substrate.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein a material of the dielectric layer comprises aluminum nitride, boron nitride, silicon carbide or diamond; and a thickness of the dielectric layer is in a range of 20 to 20000 nm.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein a ratio of an area of the plurality of first grooves to an area of the surface of the silicon substrate disposed with the dielectric layer is in a range of 1% to 99%; and a ratio of an area of the plurality of second grooves to an area of the surface of the buffer layer disposed with the dielectric layer is in a range of 1% to 99%.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein a material of the buffer layer comprises gallium nitride, aluminum gallium nitride, or aluminum nitride; a thickness of the buffer layer is in a range of 100 to 5000 nm, a material of the channel layer is gallium nitride, and a thickness of the channel layer is in a range of 10 to 1000 nm.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the composite barrier layer comprises: an isolation layer, disposed on the upper surface of the channel layer; a core barrier layer, disposed on an upper surface of the isolation layer; and a capping layer, disposed on an upper surface of the capping layer.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the composite barrier layer comprises: a core barrier layer, disposed on the upper surface of the channel layer; and 30 a capping layer, disposed on an upper surface of the core barrier layer.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the side of the first portion is filled into the plurality of second grooves to be in contact with the sides and the bottoms of the plurality of second grooves of the buffer layer, and the opposite side of the second portion is filled into the plurality of first grooves to be in contact with the sides and the bottoms of the plurality of first grooves of the silicon substrate.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the buffer layer is an iron (Fe) doped buffer layer, a dislocation density of the buffer layer is 11×109 cm⁻², and a resistivity of the buffer layer is 1 MΩ·cm; the channel layer is an unintentionally doped GaN channel layer, and a thickness of the channel layer is 300 nm; and a size of the silicon substrate is 8 inches, a thickness of the silicon substrate is 725 µm, a resistivity of the silicone substrate is 5000 Ω·cm, and a target crystal orientation of the silicon substrate is [111].
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein shapes of the plurality of first and second grooves each are a rectangle, a depth of the rectangle is 500 nm, and a width of the rectangle is 1 µm; and a ratio of an area of the plurality of first grooves to an area of the surface of the silicon substrate disposed with the dielectric layer is 50%; and a ratio of an area of the plurality of second grooves to an area of the surface of the buffer layer disposed with the dielectric layer is 50%.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the composite barrier layer comprises: an isolation layer, disposed on the upper surface of the channel layer; and a core barrier layer, disposed on an upper surface of the isolation layer.
A material structure for silicon-based gallium nitride microwave and millimeter-wave devices, comprising: a silicon substrate; a dielectric layer, comprising a lower surface and an opposite upper surface, wherein the lower surface is in contact with the silicon substrate; a buffer layer, disposed in contact with the upper surface of the dielectric layer; a channel layer, disposed in contact with the buffer layer; and a composite barrier layer, disposed in contact with the channel layer, and whereby the channel layer is located between the buffer layer and the composite barrier layer; wherein the lower surface of the dielectric layer contact-ing with the silicon substrate and the upper surface of the dielectric layer contacting with the buffer layer both are uneven surfaces, and each of the uneven surfaces is a surface formed with a plurality of grooves; the silicon substrate is filled into the plurality of grooves of the lower surface of the dielectric layer, and in direct contact with side walls and bottoms of the plurality of grooves of the lower surface of the dielectric layer; and the buffer layer is filled into the plurality of grooves of the upper surface of the dielectric layer, and in direct contact with side walls and bottoms of the plurality of grooves of the upper surface of the dielectric layer; and wherein the dielectric layer is a bi-layered structure, and comprises: a first portion and a second portion, which are made from a same material and bonded together by wafer bonding; the lower surface of the dielectric layer is a lower surface of the second portion, and the upper surface of the dielectric layer is an upper surface of the first portion; and an upper surface of the second portion is in contact with a lower surface of the first portion.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 13, wherein the buffer layer is filled into the plurality of grooves of the upper surface of the first portion to be in contact with the side walls and the bottoms of the plurality of grooves of the upper surface of the first portion; and the silicon substrate is filled into the plurality of grooves of the lower surface of the second portion to be in contact with the side walls and the bottoms of the plurality of grooves of the lower surface of the second portion.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 13, wherein the buffer layer is an iron (Fe) doped buffer layer, a dislocation density of the buffer layer is 11×109 cm⁻², and a resistivity of the buffer layer is 1 MΩ·cm; the channel layer is an unintentionally doped GaN channel layer, and a thickness of the channel layer is 300 nm; and a size of the silicon substrate is 8 inches, a thickness of the silicon substrate is 725 µm, a resistivity of the silicone substrate is 5000 Ω·cm, and a target crystal orientation of the silicon substrate is [111].
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 13, wherein a shape of each of the plurality of grooves is a rectangle, a depth of the rectangle is 500 nm, and a width of the rectangle is 1 µm; and a ratio of an area of the plurality of grooves of the lower surface of the dielectric layer to an area of the lower surface of the dielectric layer is 50%; and a ratio of an area of the plurality of grooves of the upper surface of the dielectric layer to the upper surface of the dielectric layer is 50%. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
silicon-based GaN HEMT material structure for microwave and millimeter-wave devices
Materials described outside the worked examples.
silicon substrate
Si
buffer layer
GaN channel layer
GaN
dielectric layer
aluminum nitride
AlN
boron nitride
BN
silicon carbide
SiC
diamond
C
aluminum gallium nitride buffer layer
AlGaN
Fe-doped buffer layer
composite barrier layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
buffer layer resistivity | 1 MΩ·cm | Fe-doped buffer layer |
buffer layer dislocation density | 11000000000 cm⁻² | Fe-doped buffer layer |
silicon substrate resistivity | 5000 Ω·cm | Si |
Thickness | 10–10000 nm | — |
Thickness | 10–30 nm | — |
Thickness | 10–2000 nm | — |
Thickness | 100–5000 nm | — |
Thickness | 10–1000 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Cited non-patent literature · 3
Related documents with shared materials, methods, properties, or citations.
SELF-ALIGNED GALLIUM NITRIDE FINFET AND METHOD OF FABRICATING THE SAME
METHODS OF FABRICATING THICK SEMI-INSULATING OR INSULATING EPITAXIAL GALLIUM NITRIDE LAYERS
Thermal Transport of GaN/Substrate Heterostructures under Non-Uniform Heat Source
Method and Apparatus for Forming Device Quality Gallium Nitride Layers on Silicon Substrates
GALLIUM NITRIDE DEVICES HAVING LOW OHMIC CONTACT RESISTANCE
Transistor Structure Including a Scandium Gallium Nitride Back-barrier Layer
GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
AlN BUFFER N-POLAR GaN HEMT PROFILE
GALLIUM-NITRIDE-BASED MODULE WITH ENHANCED ELECTRICAL PERFORMANCE AND PROCESS FOR MAKING THE SAME
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING GALLIUM NITRIDE EPILAYERS ON DIAMOND SUBSTRATES USING INTERMEDIATE NUCLEATING LAYER
GaN SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF FABRICATION BY SUBSTRATE REPLACEMENT
Low-Dimensional Solid-State Single-Photon Emitters
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural view of a material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave devices according to …
FIG. 2 is a schematic structural view of another material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave devices …
FIG. 3 is a schematic structural view of still another material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave devices …
FIG. 4 is a schematic structural view of even still another 60 material structure for low thermal resistance silicon-based GaN microwave and millimeter-wave …
FIG. 5 is a schematic flowchart of a manufacturing method of a material structure for low thermal resistance 65 silicon-based GaN microwave and millimeter-wave …
FIG. 6t are schematic structural views associated with a process of a manufacturing method of a material structure for low thermal resistance silicon-based GaN …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A material structure for silicon-based gallium nitride microwave and millimeter-wave devices, comprising: a silicon substrate; a dielectric layer, disposed on an upper surface of the silicon substrate, wherein an uneven first patterned interface is formed between the dielectric layer and the silicon substrate; a buffer layer, disposed on an upper surface of the dielectric layer, wherein an uneven second patterned interface is formed between the buffer layer and the dielectric layer; a channel layer, disposed on an upper surface of the buffer layer; and a composite barrier layer, disposed on an upper surface of the channel layer; wherein a surface of the silicon substrate disposed with the dielectric layer defines a plurality of first grooves to form the uneven first patterned interface, and the dielectric layer is filled into the plurality of first grooves and in contact with sides and bottoms of the plurality of first grooves; and a surface of the buffer layer provided with the dielectric layer defines a plurality of second grooves to form the uneven second patterned interface, and the dielectric layer is filled into the plurality of second grooves and in contact with sides and bottoms of the plurality of second grooves; and wherein the dielectric layer is a bi-layered structure, and comprises: a first portion and a second portion which are made from a same material and bonded together by wafer bonding; and a side of the first portion is in contact with the surface of the buffer layer, an opposite side of the first portion is in contact with a side of the second portion, and an opposite side of the second portion is in contact with the surface of the silicon substrate.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein a material of the dielectric layer comprises aluminum nitride, boron nitride, silicon carbide or diamond; and a thickness of the dielectric layer is in a range of 20 to 20000 nm.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein a ratio of an area of the plurality of first grooves to an area of the surface of the silicon substrate disposed with the dielectric layer is in a range of 1% to 99%; and a ratio of an area of the plurality of second grooves to an area of the surface of the buffer layer disposed with the dielectric layer is in a range of 1% to 99%.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein a material of the buffer layer comprises gallium nitride, aluminum gallium nitride, or aluminum nitride; a thickness of the buffer layer is in a range of 100 to 5000 nm, a material of the channel layer is gallium nitride, and a thickness of the channel layer is in a range of 10 to 1000 nm.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the composite barrier layer comprises: an isolation layer, disposed on the upper surface of the channel layer; a core barrier layer, disposed on an upper surface of the isolation layer; and a capping layer, disposed on an upper surface of the capping layer.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the composite barrier layer comprises: a core barrier layer, disposed on the upper surface of the channel layer; and 30 a capping layer, disposed on an upper surface of the core barrier layer.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the side of the first portion is filled into the plurality of second grooves to be in contact with the sides and the bottoms of the plurality of second grooves of the buffer layer, and the opposite side of the second portion is filled into the plurality of first grooves to be in contact with the sides and the bottoms of the plurality of first grooves of the silicon substrate.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the buffer layer is an iron (Fe) doped buffer layer, a dislocation density of the buffer layer is 11×109 cm⁻², and a resistivity of the buffer layer is 1 MΩ·cm; the channel layer is an unintentionally doped GaN channel layer, and a thickness of the channel layer is 300 nm; and a size of the silicon substrate is 8 inches, a thickness of the silicon substrate is 725 µm, a resistivity of the silicone substrate is 5000 Ω·cm, and a target crystal orientation of the silicon substrate is [111].
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein shapes of the plurality of first and second grooves each are a rectangle, a depth of the rectangle is 500 nm, and a width of the rectangle is 1 µm; and a ratio of an area of the plurality of first grooves to an area of the surface of the silicon substrate disposed with the dielectric layer is 50%; and a ratio of an area of the plurality of second grooves to an area of the surface of the buffer layer disposed with the dielectric layer is 50%.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 1, wherein the composite barrier layer comprises: an isolation layer, disposed on the upper surface of the channel layer; and a core barrier layer, disposed on an upper surface of the isolation layer.
A material structure for silicon-based gallium nitride microwave and millimeter-wave devices, comprising: a silicon substrate; a dielectric layer, comprising a lower surface and an opposite upper surface, wherein the lower surface is in contact with the silicon substrate; a buffer layer, disposed in contact with the upper surface of the dielectric layer; a channel layer, disposed in contact with the buffer layer; and a composite barrier layer, disposed in contact with the channel layer, and whereby the channel layer is located between the buffer layer and the composite barrier layer; wherein the lower surface of the dielectric layer contact-ing with the silicon substrate and the upper surface of the dielectric layer contacting with the buffer layer both are uneven surfaces, and each of the uneven surfaces is a surface formed with a plurality of grooves; the silicon substrate is filled into the plurality of grooves of the lower surface of the dielectric layer, and in direct contact with side walls and bottoms of the plurality of grooves of the lower surface of the dielectric layer; and the buffer layer is filled into the plurality of grooves of the upper surface of the dielectric layer, and in direct contact with side walls and bottoms of the plurality of grooves of the upper surface of the dielectric layer; and wherein the dielectric layer is a bi-layered structure, and comprises: a first portion and a second portion, which are made from a same material and bonded together by wafer bonding; the lower surface of the dielectric layer is a lower surface of the second portion, and the upper surface of the dielectric layer is an upper surface of the first portion; and an upper surface of the second portion is in contact with a lower surface of the first portion.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 13, wherein the buffer layer is filled into the plurality of grooves of the upper surface of the first portion to be in contact with the side walls and the bottoms of the plurality of grooves of the upper surface of the first portion; and the silicon substrate is filled into the plurality of grooves of the lower surface of the second portion to be in contact with the side walls and the bottoms of the plurality of grooves of the lower surface of the second portion.
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 13, wherein the buffer layer is an iron (Fe) doped buffer layer, a dislocation density of the buffer layer is 11×109 cm⁻², and a resistivity of the buffer layer is 1 MΩ·cm; the channel layer is an unintentionally doped GaN channel layer, and a thickness of the channel layer is 300 nm; and a size of the silicon substrate is 8 inches, a thickness of the silicon substrate is 725 µm, a resistivity of the silicone substrate is 5000 Ω·cm, and a target crystal orientation of the silicon substrate is [111].
The material structure for silicon-based gallium nitride microwave and millimeter-wave devices as claimed in claim 13, wherein a shape of each of the plurality of grooves is a rectangle, a depth of the rectangle is 500 nm, and a width of the rectangle is 1 µm; and a ratio of an area of the plurality of grooves of the lower surface of the dielectric layer to an area of the lower surface of the dielectric layer is 50%; and a ratio of an area of the plurality of grooves of the upper surface of the dielectric layer to the upper surface of the dielectric layer is 50%. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
silicon-based GaN HEMT material structure for microwave and millimeter-wave devices
Materials described outside the worked examples.
silicon substrate
Si
buffer layer
GaN channel layer
GaN
dielectric layer
aluminum nitride
AlN
boron nitride
BN
silicon carbide
SiC
diamond
C
aluminum gallium nitride buffer layer
AlGaN
Fe-doped buffer layer
composite barrier layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
buffer layer resistivity | 1 MΩ·cm | Fe-doped buffer layer |
buffer layer dislocation density | 11000000000 cm⁻² | Fe-doped buffer layer |
silicon substrate resistivity | 5000 Ω·cm | Si |
Thickness | 10–10000 nm | — |
Thickness | 10–30 nm | — |
Thickness | 10–2000 nm | — |
Thickness | 100–5000 nm | — |
Thickness | 10–1000 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Cited non-patent literature · 3
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