GALLIUM-NITRIDE-BASED MODULE WITH ENHANCED ELECTRICAL PERFORMANCE AND PROCESS FOR MAKING THE SAME

Julio C. Costa; Michael Carroll

Patent

Atlas literature

Patent

US 12,062,701 B2

GALLIUM-NITRIDE-BASED MODULE WITH ENHANCED ELECTRICAL PERFORMANCE AND PROCESS FOR MAKING THE SAME

Julio C. Costa, Michael Carroll

Qorvo US, Inc., Greensboro, NC (US)·Aug. 13, 2024·US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1. It will be understood that for clear illustrations,

FIG. 2

FIG. 2 shows an exemplary GaN based module with a thermally conductive ﬁlm.

FIG. 3

FIG. 3 shows an alternative GaN based module according to one embodiment of the present disclosure.

FIG. 4

FIGS. 4-9 provide exemplary steps that illustrate a pro- cess to fabricate the exemplary GaN based module shown in

FIG. 5

FIG. 5. The ﬁrst mold compound 18 may be applied by various proce- dures, such as sheet molding, overmolding, compression molding, transfer molding, dam ﬁll …

FIG. 6

FIG. 6. The thinning procedure may be done with a mechanical grinding process. Since the CMOS controller die 16 has a lower height than the switch die 14F, the …

FIG. 7

FIG. 7. The removal of the silicon switch substrate 66 from the switch die 14F provides the thinned switch die 14 and forms the opening 54 that is within the …

FIG. 8

FIG. 8. The second mold compound 20 may be applied by various procedures, such as sheet mold- ing, overmolding, compression molding, transfer molding, dam ﬁll …

FIG. 9

FIG. 9. Each individual 20 GaN based module 10 at least includes the thinned switch die 14, the CMOS controller die 16 and the module substrate 12. Those …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 10 dependent

1
IndependentAlGaNGaNfirst mold compoundsecond mold compoundSiGaN-based switch die (thinned)
A method comprising: providing a precursor package having a plurality of switch dies, a package substrate, and a ﬁrst mold compound, wherein: the package substrate includes a plurality of module substrates, wherein an inter-module area is in between two adjacent module substrates of the plu-rality of module substrates; each of the plurality of switch dies resides over a corresponding module substrate, and comprises an electrode region, a plurality of switch interconnects extending from a bottom surface of the electrode region to the corresponding module substrate, an aluminium gallium nitride (AlGaN) barrier layer over a top surface of the electrode region, a gallium nitride (GaN) buffer layer over the AlGaN barrier layer, a lateral two-dimensional electron gas (2DEG) layer realized at a heterojunction of the AlGaN barrier layer and the GaN buffer layer, and a silicon switch substrate over the GaN buffer layer; and the ﬁrst mold compound encapsulates side surfaces of each of the plurality of switch dies, wherein a top surface of the silicon switch substrate of each of the plurality of switch dies is exposed; removing substantially the silicon switch substrate of each of the plurality of switch dies to provide a plurality of thinned switch dies and form an opening over each of the plurality of thinned switch dies, wherein a top surface of each of the plurality of thinned switch dies is exposed at a bottom of the opening; applying a second mold compound to substantially ﬁll each opening to form a GaN based package; and B₂ singulating the GaN based package at each inter-module area to provide a plurality of GaN based modules, wherein each of the plurality of GaN based modules includes one module substrate and at least one thinned switch die.
1. 2
  Dependent← claim 1SiGaN-based module with controller die
  The method of claim 1 wherein the precursor package further comprises a plurality of controller dies, wherein: each of the plurality of controller dies resides over the corresponding module substrate and is conﬁgured to control operations of a corresponding switch die; each of the plurality of controller dies comprises a device layer, a plurality of controller interconnects extending from a bottom surface of the device layer to the corresponding module substrate, and a silicon control-ler substrate over a top surface of the device layer; and the ﬁrst mold compound fully encapsulates each of the plurality of controller dies.
2. 4
  Dependent← claim 1second mold compound
  The method of claim 1 wherein the second mold compound has an electrical resistivity greater that 1E₆ Ohm-cm.
3. 5
  Dependent← claim 1second mold compound
  The method of claim 1 wherein the second mold compound has a thermal conductivity greater than 2 W/m·K.
4. 6
  Dependent← claim 1first mold compoundsecond mold compound
  The method of claim 1 wherein the ﬁrst mold com-pound and the second mold compound are formed from different materials.
5. 7
  Dependent← claim 1first mold compoundsecond mold compound
  The method of claim 1 wherein the ﬁrst mold com-pound is formed from a same material as the second mold compound.
6. 8
  Dependent← claim 1GaNsecond mold compound
  The method of claim 1 wherein the second mold compound is in contact with the GaN buffer layer of each of the plurality of thinned switch dies.
7. 11
  Dependent← claim 1Si
  The method of claim 1 wherein the silicon switch substrate of each of the plurality of switch dies is removed by an etching process with an etchant chemistry, which is at least one of a group consisting of TMAH, KOH, NaOH, ACH, and XeF2. ∗ ∗ ∗ ∗ ∗

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based switch die (thinned)

second mold compoundsecond mold compound fill

first mold compoundfirst mold compound surround

2DEG_heterojunction2DEG heterojunction

GaNGaN buffer layer

AlGaNAlGaN barrier layer

electrode_region_w

Materials

Materials described outside the worked examples.

aluminium gallium nitride (AlGaN) barrier layer

AlGaN

Barrier Layer

gallium nitride (GaN) buffer layer

GaN

Process steps

Additional fabrication and treatment steps described in the patent.

Substrate Removal Etching

Step 1

Process details

note:At least one etchant from the listed group used to remove silicon switch substrate

etchant chemistry:TMAH, KOH, NaOH, ACH, XeF₂

Materials:Si

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
electrical_resistivity_second_mold_compound	≥ 1000000 Ohm-cm	second mold compound
thermal_conductivity_second_mold_compound	≥ 2 W/m·K

Cited prior art

Patents and literature cited by this patent (applicant and examiner references).

Cited patents · 426

US 4,093,562 A4,093,562 A 6/1978 Kishimoto
US 4,366,202 A4,366,202 A 12/1982 Borovsky
CN 1256300 ACN 1256300 A 6/2000
CN 1696231 ACN 1696231 A 11/2005
US 5,013,681 A5,013,681 A 5/1991 Godbey et al.
US 5,061,663 A5,061,663 A 10/1991 Bolt et al.
US 5,069,626 A5,069,626 A 12/1991 Patterson et al.

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GALLIUM-NITRIDE-BASED MODULE WITH ENHANCED ELECTRICAL PERFORMANCE AND PROCESS FOR MAKING THE SAME | Matter42 Literature

Cited non-patent literature · 31

US 10,896,908 B2, 01/2021, Costa et al. (withdrawn)
RF SOI CMOS Technology on Commercial Trap-Rich High Resistivity SOI Wafer. Ali, K. Ben et al., “RF SOI CMOS Technology on Commercial Trap-Rich High Resistivity SOI Wafer,” 2012 IEEE International SOI Conference (SOI), Oct. 1-4, 2012, Napa, California, IEEE, 2 pages. Anderson, D.R., “Thermal Conductivity of Polymers,” Sandia Cor- poration, Mar. 8, 1966, pp. 677-690. Author Unknown, “96% Alumina, thick-ﬁlm, as ﬁred,” MatWeb, Date Unknown, date accessed Apr. 6, 2016, 2 pages, http://www. matweb.com/search/DataSheet.aspx?MatGUID= 3996a734395a4870a9739076918c4297&ckck=1. Author Unknown, “CoolPoly D5108 Thermally Conductive Polyphenylene Sulﬁde (PPS),” Cool Polymers, Inc., Aug. 8, 2007, 2 pages. Author Unknown, “CoolPoly D5506 Thermally Conductive Liquid Crystalline Polymer (LCP),” Cool Polymers, Inc., Dec. 12, 2013, 2 pages. Author Unknown, “CoolPoly D-Series—Thermally Conductive Dielec- tric Plastics,” Cool Polymers, Retrieved Jun. 24, 2013, http://coolpolymers.com/dseries.asp, 1 page. Author Unknown, “CoolPoly E2 Thermally Conductive Liquid Crystalline Polymer (LCP),” Cool Polymers, Inc., Aug. 8, 2007, http://www.coolpolymers.com/Files/DS/Datasheet_e2.pdf, 1 page.
CoolPoly E3605Thermally Conductive Polyamide 4,6 (PA 4,6). Author Unknown, “CoolPoly E3605Thermally Conductive Polyamide 4,6 (PA 4,6),” Cool Polymers, Inc., Aug. 4, 2007, 1 page, http://www.coolpolymers.com/Files/DS/Datasheet_e3605.pdf. Author Unknown, “CoolPoly E5101 Thermally Conductive Polyphenylene Sulﬁde (PPS),” Cool Polymers, Inc., Aug. 27, 2007, 1 page, http://www.coolpolymers.com/Files/DS/Datasheet_e5101. pdf. Author Unknown, “CoolPoly E5107 Thermally Conductive Polyphenylene Sulﬁde (PPS),” Cool Polymers, Inc., Aug. 8, 2007, 1 page, http://coolpolymers.com/Files/DS/Datasheet_e5107.pdf. Author Unknown, “CoolPoly Selection Tool,” Cool Polymers, Inc., 2006, 1 page, http://www.coolpolymers.com/select.asp?Application= Substrates+%26+Electcronic_Packaging. Author Unknown, “CoolPoly Thermally Conductive Plastics for Dielectric Heat Plates,” Cool Polymers, Inc., 2006, 2 pages, http://www.coolpolymers.com/heatplate.asp. Author Unknown, “CoolPoly Thermally Conductive Plastics for Substrates and Electronic Packaging,” Cool Polymers, Inc., 2005, 1 page. Author Unknown, “Electrical Properties of Plastic Materials,” Pro- fessional Plastics, Oct. 28, 2011, http://www.professionalplastics. com/professionalplastics/ElectricalPropertiesofPlastics.pdf, accessed Dec. 18, 2014, 4 pages. Author Unknown, “Fully Sintered Ferrite Powders,” Powder Pro- cessing and Technology, LLC, Date Unknown, 1 page. Author Unknown, “Heat Transfer,” Cool Polymers, Inc., 2006, http://www.coolpolymers.com/heattrans.html, 2 pages. Author Unknown, “Hysol UF3808,” Henkel Corporation, Technical Data Sheet, May 2013, 2 pages. Author Unknown, “PolyOne Therma-Tech™LC-5000C TC LCP,”
Sapphire substrate. MatWeb, Date Unknown, date accessed Apr. 6, 2016, 2 pages, http://www.matweb.com/search/datasheettext.aspx?matguid= 89754e8bb26148d083c5ebb05a0cbff1. Author Unknown, “Sapphire substrate,” from CRC Handbook of Chemistry and Physics, Date Unknown, 1 page. Author Unknown, “Thermal Properties of Plastic Materials,” Pro- fessional Plastics, Aug. 21, 2010, http://www.professionalplastics. com/professionalplastics/ThermalPropertiesofPlasticMaterials.pdf, accessed Dec. 18, 2014, 4 pages. Author Unknown, “Thermal Properties of Solids,” PowerPoint Presentation, No Date, 28 slides, http://www.phys.huji.ac.il/Phys_ Hug/Lectures/77602/PHONONS_2_thermal.pdf. Author Unknown, “Thermal Resistance & Thermal Conductance,” C-Therm Technologies Ltd., accessed Sep. 19, 2013, 4 pages, http://www.ctherm.com/products/tci_thermal_conductivity/helpful_ links_tools/thermal_resistance_thermal_conductance/. Author Unknown, “The Technology: Akhan’s Approach and Solu- tion: The Miraj Diamond™Platform,” 2015, accessed Oct. 9, 2016, http://www.akhansemi.com/technology.html#the-miraj-diamond- platform, 5 pages. Beck, D., et al., “CMOS on FZ-High Resistivity substrate for Monolithic Integration of SiGe-RF-Circuitry and Readout Electron- ics,” IEEE Transactions on Electron Devices, vol. 44, No. 7, Jul. 1997, pp. 1091-1101. Botula, A., et al., “A Thin-Film SOI 180nm CMOS RF Switch Technology,” IEEE Topical Meeting on Silicon Monolithic Inte- grated Circuits in RF Systems, (SiRF ’09), Jan. 2009, pp. 1-4. Carroll, M., et al., “High-Resistivity SOI CMOS Cellular Antenna Switches,” Annual IEEE Compound Semiconductor Integrated Cir- cuit Symposium, (CISC 2009), Oct. 2009, pp. 1-4. Colinge, J.P., et al., “A Low-Voltage, Low-Power Microwave SOI MOSFET,” Proceedings of 1996 IEEE International SOI Confer- ence, Oct. 1996, pp. 128-129. Costa, J. et al., “Integrated MEMS Switch Technology on SOI- CMOS,” Proceedings of Hilton Head Workshop: A Solid-State
Silicon RFCMOS SOI Technology with Above-IC MEMS Integration for Front End Wireless Applications. Sensors, Actuators and Microsystems Workshop, Jun. 1-5, 2008, Hilton Head Island, SC, IEEE, pp. 900-903. Costa, J. et al., “Silicon RFCMOS SOI Technology with Above-IC MEMS Integration for Front End Wireless Applications,” Bipolar/BiCMOS Circuits and Technology Meeting, 2008, BCTM 2008, IEEE, pp. 204-207. Costa, J., “RFCMOS SOI Technology for 4G Reconﬁgurable RF Solutions,” Session WEC1-2, Proceedings of the 2013 IEEE Inter- national Microwave Symposium, 4 pages.
RF Non-Linearities from Si-Based Substrates. Esfeh, Babak Kazemi et al., “RF Non-Linearities from Si-Based Substrates,” 2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Apr. 2-4, 2014, IEEE, 3 pages. Finne, R. M. et al., “A Water-Amine-Complexing Agent System for Etching Silicon,” Journal of the Electrochemical Society, vol. 114, No. 9, Sep. 1967, pp. 965-970. Gamble, H. S. et al., “Low-Loss CPW Lines on surface Stabilized High-Resistivity Silicon,” IEEE Microwave and Guided Wave Letters, vol. 9, No. 10, Oct. 1999, pp. 395-397.
A Review of Dielectric Polymer Composites with High Thermal Conductivity. Huang, Xingyi, et al., “A Review of Dielectric Polymer Composites with High Thermal Conductivity,” IEEE Electrical Insulation Maga- zine, vol. 27, No. 4, Jul./Aug. 2011, pp. 8-16. Joshi, V. et al., “MEMS Solutions in RF Applications,” 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Uniﬁed Con- ference (S3S), Oct. 2013, IEEE, 2 pages.
Study of FCMBGA with Low CTE Core substrate. Jung, Boo Yang, et al., “Study of FCMBGA with Low CTE Core substrate,” 2009 Electronic Components and Technology Confer- ence, May 2009, pp. 301-304. Kerr, D.C., et al., “Identiﬁcation of RF Harmonic Distortion on Si Substrates and Its Reduction Using a Trap-Rich Layer,” IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, (SiRF 2008), Jan. 2008, pp. 151-154. Lederer, D., et al., “New substrate Passivation Method Dedicated to HR SOI Wafer Fabrication with Increased substrate Resistivity,” IEEE Electron Device Letters, vol. 26, No. 11, Nov. 2005, pp. 805-807.
Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers. Lederer, Dimitri et al., “Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers,” Solid-State Electronics, vol. 47, No. 11, Nov. 2003, pp. 1927-1936.
Integration of III-V materials and Si- CMOS through double layer transfer process. Lee, Kwang Hong et al., “Integration of III-V materials and Si- CMOS through double layer transfer process,” Japanese Journal of Applied Physics, vol. 54, Jan. 2015, pp. 030209-1 to 030209-5.
Modeling of SOI FET for RF Switch Applications. Lee, Tzung-Yin, et al., “Modeling of SOI FET for RF Switch Applications,” IEEE Radio Frequency Integrated Circuits Sympo- sium, May 23-25, 2010, Anaheim, CA, IEEE, pp. 479-482. Lu, J.Q., et al., “Evaluation Procedures for Wafer Bonding and Thinning of Interconnect Test Structures for 3D ICs,” Proceedings of the IEEE 2003 International Interconnect Technology Confer- ence, Jun. 2-4, 2003, pp. 74-76. Mamunya, Ye.P., et al., “Electrical and Thermal Conductivity of Polymers Filled with Metal Powders,” European Polymer Journal, vol. 38, 2002, pp. 1887-1897.
RF MEMS-CMOS Device Integration. Mansour, Raafat R., “RF MEMS-CMOS Device Integration,” IEEE Microwave Magazine, vol. 14, No. 1, Jan. 2013, pp. 39-56. Mazure´, C. et al., “Advanced SOI Substrate Manufacturing,” 2004 IEEE International Conference on Integrated Circuit Design and Technology, 2004, IEEE, pp. 105-111. Micak, R. et al., “Photo-Assisted Electrochemical Machining of Micromechanical Structures,” Proceedings of Micro Electro Mechani- cal Systems, Feb. 7-10, 1993, Fort Lauderdale, FL, IEEE, pp. 225-229.
Monolithic Integration of RF-MEMS within CMOS. Morris, Art, “Monolithic Integration of RF-MEMS within CMOS,” 2015 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 27-29, 2015, IEEE, 2 pages. Niklaus, F., et al., “Adhesive Wafer Bonding,” Journal of Applied Physics, vol. 99, No. 3, 031101 (2006), 28 pages. Parthasarathy, S., et al., “RF SOI Switch FET Design and Modeling Tradeoffs for GSM Applications,” 2010 23rd International Confer- ence on VLSI Design, (VLSID ’10), Jan. 2010, pp. 194-199. Raskin, J.P., et al., “Coupling Effects in High-Resistivity SIMOX Substrates for VHF and Microwave Applications,” Proceedings of 1995 IEEE International SOI Conference, Oct. 1995, pp. 62-63. Non-Final Office Action for U.S. Appl. No. 16/426,527, dated Feb. 16, 2022, 9 pages.
Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Mar. 9, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Mar. 31, 2022, 3 pages. Non-Final Office Action for U.S. Appl. No. 16/678,586, dated Mar. 3, 2022, 14 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Feb. 2, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Mar. 9, 2022, 4 pages. Non-Final Office Action for U.S. Appl. No. 16/844,406, dated Mar. 14, 2022, 16 pages. Non-Final Office Action for U.S. Appl. No. 17/102,957, dated Feb. 17, 2022, 9 pages. Summons to Attend for European Patent Application No. 16751791. 1, mailed Feb. 28, 2022, 10 pages. Decision to Grant for Japanese Patent Application No. 2019507765, dated Feb. 10, 2022, 6 pages. Decision to Grant for Japanese Patent Application No. 2019507768, dated Feb. 10, 2022, 6 pages. Office Letter for Taiwanese Patent Application No. 108140788, dated Jan. 5, 2022, 16 pages. Advisory Action for U.S. Appl. No. 16/427,019, dated Aug. 2, 2021, 3 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/034699, dated Aug. 5, 2021, 9 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014662, dated Aug. 5, 2021, 11 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014665, dated Aug. 5, 2021, 10 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014666, dated Aug. 5, 2021, 11 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014667, dated Aug. 5, 2021, 8 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014669, dated Aug. 5, 2021, 9 pages. Notice of Allowance for U.S. Appl. No. 15/287,273, dated Jun. 30, 2017, 8 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/287,273, dated Jul. 21, 2017, 5 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Sep. 7, 2017, 5 pages. Extended European Search Report for European Patent Application No. 15184861.1, dated Jan. 25, 2016, 6 pages. Office Action of the Intellectual Property Office for Taiwanese Patent Application No. 104130224, dated Jun. 15, 2016, 9 pages. Non-Final Office Action for U.S. Appl. No. 14/885,202, dated Apr. 14, 2016, 5 pages. Final Office Action for U.S. Appl. No. 14/885,202, dated Sep. 27, 2016, 7 pages. Advisory Action for U.S. Appl. No. 14/885,202, dated Nov. 29, 2016, 3 pages. Notice of Allowance for U.S. Appl. No. 14/885,202, dated Jan. 27, 2017, 7 pages. Notice of Allowance for U.S. Appl. No. 14/885,202, dated Jul. 24, 2017, 8 pages. Notice of Allowance for U.S. Appl. No. 14/885,243, dated Aug. 31, 2016, 8 pages. Non-Final Office Action for U.S. Appl. No. 12/906,689, dated May 27, 2011, 13 pages. Non-Final Office Action for U.S. Appl. No. 12/906,689, dated Nov. 4, 2011, 20 pages. Search Report for Japanese Patent Application No. 2011-229152, dated Feb. 22, 2013, 58 pages. Office Action for Japanese Patent Application No. 2011-229152, drafted May 10, 2013, 7 pages. Final Rejection for Japanese Patent Application No. 2011-229152, drafted Oct. 25, 2013, 2 pages. International Search Report and Written Opinion for PCT/US2016/045809, dated Oct. 7, 2016, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/652,867, dated Oct. 10, 2017, 5 pages.
Chapter 9: Lamination. Bernheim et al., “Chapter 9: Lamination,” Tools and Manufacturing Engineers Handbook (book), Apr. 1, 1996, Society of Manufactur- ing Engineers, p. 9-1. Fillion R. et al., “Development of a Plastic Encapsulated Multichip Technology for High Volume, Low Cost Commercial Electronics,” Electronic Components and Technology Conference, vol. 1, May 1994, IEEE, 5 pages.
New Thermoplastic Polymer Sub- strate for Microstrip Antennas at 60 GHz. Henawy, Mahmoud Al et al., “New Thermoplastic Polymer Sub- strate for Microstrip Antennas at 60 GHz,” German Microwave Conference, Mar. 15-17, 2010, Berlin, Germany, IEEE, pp. 5-8. International Search Report and Written Opinion for PCT/US2017/046744, dated Nov. 27, 2017, 17 pages. International Search Report and Written Opinion for PCT/US2017/046758, dated Nov. 16, 2017, 19 pages. International Search Report and Written Opinion for PCT/US2017/046779, dated Nov. 29, 2017, 17 pages. Non-Final Office Action for U.S. Appl. No. 15/616,109, dated Oct. 23, 2017, 16 pages. Corrected Notice of Allowability for U.S. Appl. No. 14/851,652, dated Oct. 20, 2017, 5 pages. Final Office Action for U.S. Appl. No. 15/262,457, dated Dec. 19, 2017, 12 pages. Supplemental Notice of Allowability and Applicant-Initiated Inter- view Summary for U.S. Appl. No. 15/287,273, dated Oct. 18, 2017, 6 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Nov. 2, 2017, 5 pages. Non-Final Office Action for U.S. Appl. No. 15/491,064, dated Jan. 2, 2018, 9 pages. Notice of Allowance for U.S. Appl. No. 14/872,910, dated Nov. 17, 2017, 11 pages. Notice of Allowance for U.S. Appl. No. 15/648,082, dated Nov. 29, 2017, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/652,826, dated Nov. 3, 2017, 5 pages. Notice of Allowance for U.S. Appl. No. 15/229,780, dated Oct. 3, 2017, 7 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Jan. 17, 2018, 5 pages. Notice of Allowance for U.S. Appl. No. 15/498,040, dated Feb. 20, 2018, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/387,855, dated Jan. 16, 2018, 7 pages. Non-Final Office Action for U.S. Appl. No. 15/795,915, dated Feb. 23, 2018, 6 pages. International Preliminary Report on Patentability for PCT/US2016/045809, dated Feb. 22, 2018, 8 pages. Advisory Action and Applicant-Initiated Interview Summary for U.S. Appl. No. 15/262,457, dated Feb. 28, 2018, 5 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Feb. 23, 2018, 5 pages. Non-Final Office Action for U.S. Appl. No. 15/676,415, dated Mar. 27, 2018, 14 page. Non-Final Office Action for U.S. Appl. No. 15/676,621, dated Mar. 26, 2018, 16 pages. Notice of Allowance for U.S. Appl. No. 15/795,915, dated Jun. 15, 2018, 7 pages. Final Office Action for U.S. Appl. No. 15/387,855, dated May 24, 2018, 9 pages. Non-Final Office Action for U.S. Appl. No. 15/262,457, dated Apr. 19, 2018, 10 pages. Notice of Allowance for U.S. Appl. No. 15/491,064, dated Apr. 30, 2018, 9 pages.
Non-Final Office Action for U.S. Appl. No. 15/601,858, dated Jun. 26, 2018, 12 pages. Notice of Allowance for U.S. Appl. No. 15/616,109, dated Jul. 2, 2018, 7 pages. Notice of Allowance for U.S. Appl. No. 15/676,621, dated Jun. 5, 2018, 8 pages.
Substrate Crosstalk Reduction Using SOI Technology. Raskin, Jean-Pierre et al., “Substrate Crosstalk Reduction Using SOI Technology,” IEEE Transactions on Electron Devices, vol. 44, No. 12, Dec. 1997, pp. 2252-2261. Rong, B., et al., “Surface-Passivated High-Resistivity Silicon Sub- strates for RFICs,” IEEE Electron Device Letters, vol. 25, No. 4, Apr. 2004, pp. 176-178.
Plastics that Conduct Heat. Sherman, Lilli M., “Plastics that Conduct Heat,” Plastics Technol- ogy Online, Jun. 2001, Retrieved May 17, 2016, http://www.ptonline. com/articles/plastics-that-conduct-heat, Gardner Business Media, Inc., 5 pages. Tombak, A., et al., “High-Efficiency Cellular Power Ampliﬁers Based on a Modiﬁed LDMOS Process on Bulk Silicon and Silicon- On-Insulator Substrates with Integrated Power Management Cir- cuitry,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, No. 6, Jun. 2012, pp. 1862-1869. Yamanaka, A., et al., “Thermal Conductivity of High-Strength Polyetheylene Fiber and Applications for Cryogenic Use,” Interna- tional Scholarly Research Network, ISRN Materials Science, vol. 2011, Article ID 718761, May 25, 2011, 10 pages. Non-Final Office Action for U.S. Appl. No. 13/852,648, dated Jul. 18, 2013, 20 pages. Final Office Action for U.S. Appl. No. 13/852,648, dated Nov. 26, 2013, 21 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 13/852,648, dated Jan. 27, 2014, 4 pages. Advisory Action for U.S. Appl. No. 13/852,648, dated Mar. 7, 2014, 4 pages. Notice of Allowance for U.S. Appl. No. 13/852,648, dated Jun. 16, 2014, 9 pages. Notice of Allowance for U.S. Appl. No. 13/852,648, dated Sep. 26, 2014, 8 pages. Notice of Allowance for U.S. Appl. No. 13/852,648, dated Jan. 22, 2015, 8 pages. Non-Final Office Action for U.S. Appl. No. 13/852,648, dated Jun. 24, 2015, 20 pages. Final Office Action for U.S. Appl. No. 13/852,648, dated Oct. 22, 2015, 20 pages. Non-Final Office Action for U.S. Appl. No. 13/852,648, dated Feb. 19, 2016, 12 pages. Final Office Action for U.S. Appl. No. 13/852,648, dated Jul. 20, 2016, 14 pages. Non-Final Office Action for U.S. Appl. No. 14/315,765, dated Jan. 2, 2015, 6 pages. Final Office Action for U.S. Appl. No. 14/315,765, dated May 11, 2015, 17 pages. Advisory Action for U.S. Appl. No. 14/315,765, dated Jul. 22, 2015, 3 pages. Non-Final Office Action for U.S. Appl. No. 14/260,909, dated Mar. 20, 2015, 20 pages. Final Office Action for U.S. Appl. No. 14/260,909, dated Aug. 12, 2015, 18 pages. Non-Final Office Action for U.S. Appl. No. 14/261,029, dated Dec. 5, 2014, 15 pages. Notice of Allowance for U.S. Appl. No. 14/261,029, dated Apr. 27, 2015, 10 pages. Corrected Notice of Allowability for U.S. Appl. No. 14/261,029, dated Nov. 17, 2015, 5 pages. Non-Final Office Action for U.S. Appl. No. 14/529,870, dated Feb. 12, 2016, 14 pages. Notice of Allowance for U.S. Appl. No. 14/529,870, dated Jul. 15, 2016, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/293,947, dated Apr. 7, 2017, 12 pages. Notice of Allowance for U.S. Appl. No. 15/293,947, dated Aug. 14, 2017, 7 pages. Non-Final Office Action for U.S. Appl. No. 14/715,830, dated Apr. 13, 2016, 16 pages. Final Office Action for U.S. Appl. No. 14/715,830, dated Sep. 6, 2016, 13 pages. Advisory Action for U.S. Appl. No. 14/715,830, dated Oct. 31, 2016, 6 pages. Notice of Allowance for U.S. Appl. No. 14/715,830, dated Feb. 10, 2017, 8 pages. Notice of Allowance for U.S. Appl. No. 14/715,830, dated Mar. 2, 2017, 8 pages. Non-Final Office Action for U.S. Appl. No. 14/851,652, dated Oct. 7, 2016, 10 pages. Notice of Allowance for U.S. Appl. No. 14/851,652, dated Apr. 11, 2017, 9 pages. Corrected Notice of Allowance for U.S. Appl. No. 14/851,652, dated Jul. 24, 2017, 6 pages. Corrected Notice of Allowance for U.S. Appl. No. 14/851,652, dated Sep. 6, 2017, 5 pages. Notice of Allowance for U.S. Appl. No. 14/959,129, dated Oct. 11, 2016, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/173,037, dated Jan. 10, 2017, 8 pages. Final Office Action for U.S. Appl. No. 15/173,037, dated May 2, 2017, 13 pages. Advisory Action for U.S. Appl. No. 15/173,037, dated Jul. 20, 2017, 3 pages. Notice of Allowance for U.S. Appl. No. 15/173,037, dated Aug. 9, 2017, 7 pages. Non-Final Office Action for U.S. Appl. No. 15/085,185, dated Feb. 15, 2017, 10 pages. Non-Final Office Action for U.S. Appl. No. 15/085,185, dated Jun. 6, 2017, 5 pages. Non-Final Office Action for U.S. Appl. No. 15/229,780, dated Jun. 30, 2017, 12 pages. Non-Final Office Action for U.S. Appl. No. 15/262,457, dated Aug. 7, 2017, 10 pages. Notice of Allowance for U.S. Appl. No. 15/408,560, dated Sep. 25, 2017, 8 pages. Notice of Allowance for U.S. Appl. No. 15/287,202, dated Aug. 25, 2017, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/353,346, dated May 23, 2017, 15 pages. Notice of Allowance for U.S. Appl. No. 15/353,346, dated Sep. 25, 2017, 9 pages. Notice of Allowance for U.S. Appl. No. 16/427,019, dated Mar. 10, 2023, 10 pages. Non-Final Office Action for U.S. Appl. No. 16/678,551, dated Mar. 28, 2023, 14 pages. Notice of Allowance for U.S. Appl. No. 17/573,112, dated Mar. 8, 2023, 8 pages. Notice of Allowance for U.S. Appl. No. 17/554,477, dated Mar. 7, 2023, 8 pages. Final Office Action for U.S. Appl. No. 16/844,406, dated Mar. 6, 2023, 13 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Mar. 1, 2023, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Apr. 12, 2023, 4 pages. Non-Final Office Action for U.S. Appl. No. 17/121,194, dated May 9, 2023, 22 pages. Non-Final Office Action for U.S. Appl. No. 17/102,957, dated Apr. 13, 2023, 24 pages. Non-Final Office Action for U.S. Appl. No. 17/389,977, dated Mar. 28, 2023, 10 pages. Written Decision on Registration for Korean Patent Application No. 10-2018-7006660, dated Feb. 24, 2023, 8 pages. Decision to Grant for Japanese Patent Application No. 2022032477, dated Mar. 14, 2023, 5 pages. Decision of Rejection for Chinese Patent Application No. 201780058052.6, dated Mar. 30, 2023, 16 pages.
Office Action for Taiwanese Patent Application No. 109102892, dated Apr. 14, 2023, 18 pages. Advisory Action for U.S. Appl. No. 16/844,406, dated May 12, 2023, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Apr. 11, 2022, 3 pages. Final Office Action for U.S. Appl. No. 16/844,406, dated Jun. 24, 2022, 17 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, dated Aug. 17, 2022, 7 pages. Non-Final Office Action for U.S. Appl. No. 16/427,019, dated Aug. 15, 2022, 17 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Jul. 14, 2022, 3 pages. Final Office Action for U.S. Appl. No. 16/678,586, dated Sep. 1, 2022, 7 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Jul. 14, 2022, 4 pages. Advisory Action for U.S. Appl. No. 16/844,406, dated Jul. 26, 2022, 3 pages. Corrected Notice of Allowability U.S. Appl. No. 17/109,935, dated Jul. 1, 2022, 4 pages. Corrected Notice of Allowability U.S. Appl. No. 17/109,935, dated Jul. 27, 2022, 4 pages. Final Office Action for U.S. Appl. No. 17/102,957, dated Aug. 18, 2022, 12 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/063094, dated Aug. 9, 2022, 24 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Sep. 2, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Sep. 2, 2022, 4 pages. Notice of Allowance for U.S. Appl. No. 16/390,496, dated Oct. 27, 2022, 21 pages. Notice of Allowance for U.S. Appl. No. 16/204,214, dated Oct. 28, 2022, 11 pages. Final Office Action for U.S. Appl. No. 16/427,019, dated Dec. 12, 2022, 19 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Oct. 4, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Nov. 2, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Dec. 7, 2022, 3 pages. Non-Final Office Action for U.S. Appl. No. 17/573,112, dated Dec. 9, 2022, 6 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Nov. 14, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Dec. 9, 2022, 4 pages. Non-Final Office Action for U.S. Appl. No. 17/554,477, dated Nov. 25, 2022, 6 pages. Notice of Allowance for U.S. Appl. No. 17/109,935, dated Oct. 28, 2022, 7 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Nov. 10, 2022, 4 pages. First OfficeAction for Chinese PatentApplication No. 201780062516. 0, dated Nov. 2, 2022, 10 pages. Notice of Reasons for Rejection for Japanese PatentApplication No. 2022032477, dated Oct. 3, 2022, 4 pages. First OfficeAction for Chinese PatentApplication No. 201780058052. 6, dated Nov. 2, 2022, 22 pages. Notice of Allowance for U.S. Appl. No. 17/330,787, dated Dec. 15, 2022, 7 pages. Non-Final Office Action for U.S. Appl. No. 15/676,693, dated May 3, 2018, 14 pages. Notice of Allowance for U.S. Appl. No. 15/789,107, dated May 18, 2018, 8 pages. Final Office Action for U.S. Appl. No. 15/616,109, dated Apr. 19, 2018, 18 pages. Notice of Allowance for U.S. Appl. No. 15/676,693, dated Jul. 20, 2018, 8 pages. Notice of Allowance for U.S. Appl. No. 15/695,629, dated Jul. 11, 2018, 12 pages. Notice of Allowance for U.S. Appl. No. 15/387,855, dated Aug. 10, 2018, 7 pages. Notice of Allowance for U.S. Appl. No. 15/914,538, dated Aug. 1, 2018, 9 pages. Notice of Allowance and Applicant-Initiated Interview Summary for U.S. Appl. No. 15/262,457, dated Sep. 28, 2018, 16 pages. Corrected Notice of Allowance for U.S. Appl. No. 15/676,693, dated Aug. 29, 2018, 5 pages. Final Office Action for U.S. Appl. No. 15/601,858, dated Nov. 26, 2018, 16 pages. Non-Final Office Action for U.S. Appl. No. 15/945,418, dated Nov. 1, 2018, 13 pages. First OfficeAction for Chinese PatentApplication No. 201510746323. X, dated Nov. 2, 2018, 12 pages. Advisory Action for U.S. Appl. No. 15/601,858, dated Jan. 22, 2019, 3 pages. Notice of Allowance for U.S. Appl. No. 16/038,879, dated Jan. 9, 2019, 8 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated Jan. 11, 2019, 8 pages. International Preliminary Report on Patentability for PCT/US2017/046744, dated Feb. 21, 2019, 11 pages. International Preliminary Report on Patentability for PCT/US2017/046758, dated Feb. 21, 2019, 11 pages. International Preliminary Report on Patentability for PCT/US2017/046779, dated Feb. 21, 2019, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/992,613, dated Feb. 27, 2019, 15 pages. Non-Final Office Action for U.S. Appl. No. 15/695,579, dated Jan. 28, 2019, 8 pages. Notice of Allowance for U.S. Appl. No. 15/992,639, dated May 9, 2019, 7 pages. Notice of Allowance for U.S. Appl. No. 15/695,579, dated Mar. 20, 2019, 8 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated May 13, 2019, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/601,858, dated Apr. 17, 2019, 9 pages.
Smart GaN platform; Performance & Challenges. Tsai, Chun-Lin, et al., “Smart GaN platform; Performance & Challenges,” IEEE International Electron Devices Meeting, 2017, 4 pages.
Performance Enhancement of Flip-Chip Packaged AlGAaN/GaN HEMTs by Strain Engineering Design. Tsai, Szu-Ping., et al., “Performance Enhancement of Flip-Chip Packaged AlGAaN/GaN HEMTs by Strain Engineering Design,” IEEE Transcations on Electron Devices, vol. 63, Issue 10, Oct. 2016, pp. 3876-3881. Final Office Action for U.S. Appl. No. 15/992,613, dated May 24, 2019, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/873,152, dated May 24, 2019, 11 pages. Notice of Allowance for U.S. Appl. No. 16/168,327, dated Jun. 28, 2019, 7 pages.
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application. Lin, Yueh, Chin, et al., “Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application,” IEEE Elec- tronic Device Letters, vol. 38, Issue 8, 2017, 4 pages.
GaN-on-Si Switched Mode RF Power Ampliﬁers for Non-Constant Envelope Signals. Shukla, Shishir, et al., “GaN-on-Si Switched Mode RF Power Ampliﬁers for Non-Constant Envelope Signals,” IEEE Topical Conference on RF/Microwave Power Ampliﬁers for Radio and Wireless Applications, 2017, pp. 88-91. International Search Report and Written Opinion for International Patent Application No. PCT/US19/25591, dated Jun. 21, 2019, 7 pages. Notice of Reasons for Refusal for Japanese Patent Application No. 2015-180657, dated Jul. 9, 2019, 4 pages. Notice of Allowance for U.S. Appl. No. 15/601,858, dated Aug. 16, 2019, 8 pages. Advisory Action for U.S. Appl. No. 15/992,613, dated Jul. 29, 2019, 3 pages.
Detailed Simulation Study of a Reverse Embedded- SiGE Strained-Silicon MOSFET. Final Office Action for U.S. Appl. No. 15/873,152, dated Aug. 8, 2019, 13 pages. Notice of Allowance for U.S. Appl. No. 15/975,230, dated Jul. 22, 2019, 7 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated Aug. 28, 2019, 8 pages. Fiorenza, et al., “Detailed Simulation Study of a Reverse Embedded- SiGE Strained-Silicon MOSFET,” IEEE Transactions on Electron Devices, vol. 55, Issue 2, Feb. 2008, pp. 640-648. Fiorenza, et al., “Systematic study of thick strained silicon NMOSFETs for digital applications,” International SiGE Technology and Device Meeting, May 2006, IEEE, 2 pages. Huang, et al., “Carrier Mobility Enhancement in Strained Si-On- Insulator Fabricated by Wafer Bonding,” Symposium on VLSI
Effect of Germanium content on mobility enhancement for strained silicon FET. Technology, Digest of Technical Papers, 2001, pp. 57-58. Nan, et al., “Effect of Germanium content on mobility enhancement for strained silicon FET,” Student Conference on Research and Development, Dec. 2017, IEEE, pp. 154-157.
Performance Enhancement of Strained-Si MOSFETs Fabricated on a Chemical-Mechanical-Polished SiGE Substrate. Sugii, Nobuyuki, et al., “Performance Enhancement of Strained-Si MOSFETs Fabricated on a Chemical-Mechanical-Polished SiGE Substrate,” IEEE Transactions on Electron Devices, vol. 49, Issue 12, Dec. 2002, pp. 2237-2243.
Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers. Yin, Haizhou, et al., “Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers,” International Electron Devices Meeting, Dec. 2003, San Francisco, California, IEEE, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/695,579, dated Feb. 5, 2020, 5 pages. Notice of Allowance for U.S. Appl. No. 15/992,613, dated Sep. 23, 2019, 7 pages. Non-Final Office Action for U.S. Appl. No. 16/204,214, dated Oct. 9, 2019, 15 pages. Non-Final Office Action for U.S. Appl. No. 15/816,637, dated Oct. 31, 2019, 10 pages. Advisory Action for U.S. Appl. No. 15/873,152, dated Oct. 11, 2019, 3 pages. Notice of Allowance for U.S. Appl. No. 15/873,152, dated Dec. 10, 2019, 9 pages. Final Office Action for U.S. Appl. No. 16/426,527, dated May 25, 2023, 9 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, dated Jun. 22, 2023, 8 pages. Final Office Action for U.S. Appl. No. 16/678,551, dated May 26, 2023, 16 pages. Non-Final Office Action for U.S. Appl. No. 16/844,406, dated Jun. 23, 2023, 18 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102894, dated Apr. 7, 2023, 20 pages. Non-Final Office Action for U.S. Appl. No. 16/527,702, dated Jan. 10, 2020, 10 pages. Office Action for Japanese Patent Application No. 2018-526613, dated Nov. 5, 2019, 8 pages. Intention to Grant for European Patent Application No. 17757646.9, dated Feb. 27, 2020, 55 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/034645, dated Sep. 19, 2019, 14 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/063460, dated Feb. 25, 2020, 14 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/055317, dated Feb. 6, 2020, 17 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/055321, dated Jan. 27, 2020, 23 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/034699, dated Oct. 29, 2019, 13 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/695,579, dated Apr. 1, 2020, 4 pages. Final Office Action for U.S. Appl. No. 16/204,214, dated Mar. 6, 2020, 14 pages. Notice of Allowance for U.S. Appl. No. 15/816,637, dated Apr. 2, 2020, 8 pages. Notice of Allowance for U.S. Appl. No. 16/527,702, dated Apr. 9, 2020, 8 pages. Decision of Rejection for Japanese Patent Application No. 2015- 180657, dated Mar. 17, 2020, 4 pages. Dhar, S. et al., “Electron Mobility Model for Strained-Si Devices,” IEEE Transactions on Electron Devices, vol. 52, No. 4, Apr. 2005, IEEE, pp. 527-533. Notice of Allowance for U.S. Appl. No. 16/038,879, dated Apr. 15, 2020, 9 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated Apr. 30, 2020, 8 pages. Advisory Action for U.S. Appl. No. 16/204,214, dated Apr. 15, 2020, 3 pages. Examination Report for European PatentApplication No. 16751791. 1, dated Apr. 30, 2020, 15 pages. Notiﬁcation of Reasons for Refusal for Japanese Patent Application No. 2018-526613, dated May 11, 2020, 5 pages. Notice of Allowance for U.S. Appl. No. 15/873,152, dated May 11, 2020, 8 pages. Non-Final Office Action for U.S. Appl. No. 16/454,687, dated May 15, 2020, 14 pages. Welser, J. et al., “Electron Mobility Enhancement in Strained-Si N-Type Metal-Oxide-Semiconductor Field-Effect Transistors,” IEEE Electron Device Letters, vol. 15, No. 3, Mar. 1994, IEEE, pp. 100-102. Zeng, X. et al., “A Combination of Boron Nitride Nanotubes and Cellulose Nanoﬁbers for the Preparation of a Nanocomposite with High Thermal Conductivity,” ACS Nano, vol. 11, No. 5, 2017, American Chemical Society, pp. 5167-5178. Quayle Action for U.S. Appl. No. 16/703,251, mailed Jun. 26, 2020, 5 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/695,579, dated May 20, 2020, 4 pages. Notice of Allowability for U.S. Appl. No. 15/695,579, dated Jun. 25, 2020, 4 pages. Notice of Allowance for U.S. Appl. No. 16/368,210, dated Jun. 17, 2020, 10 pages. Non-Final Office Action for U.S. Appl. No. 16/374,125, dated Jun. 26, 2020, 12 pages. Non-Final Office Action for U.S. Appl. No. 16/390,496, dated Jul. 10, 2020, 17 pages. Non-Final Office Action for U.S. Appl. No. 16/204,214, dated May 19, 2020, 15 pages. Non-Final Office Action for U.S. Appl. No. 16/454,809, dated May 15, 2020, 12 pages. Examination Report for Singapore Patent Application No. 11201901193U, dated May 26, 2020, 6 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014662, dated May 7, 2020, 18 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014665, dated May 13, 2020, 17 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014666, dated Jun. 4, 2020, 18 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014667, dated May 18, 2020, 14 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014669, dated Jun. 4, 2020, 15 pages. Notice of Allowance for U.S. Appl. No. 16/454,687, dated Aug. 14, 2020, 7 pages. Decision to Grant for Japanese Patent Application No. 2018- 526613, dated Aug. 17, 2020, 5 pages.
Hybrid Bonding: From Concept to Commercializa- tion. Final Office Action for U.S. Appl. No. 16/454,809, dated Aug. 21, 2020, 12 pages. Von Trapp, F., “Hybrid Bonding: From Concept to Commercializa- tion,” Apr. 2, 2018, 3D InCities, https://www.3dincites.com/2018/04/hybrid-bonding-from-concept-to-commercialization/, 10 pages. Notice of Allowance for U.S. Appl. No. 16/703,251, dated Aug. 27, 2020, 8 pages. Notice of Allowance for U.S. Appl. No. 16/527,702, dated Nov. 13, 2020, 8 pages. Notice of Allowance for U.S. Appl. No. 16/374,125, dated Dec. 16, 2020, 9 pages. Final Office Action for U.S. Appl. No. 16/390,496, dated Dec. 24, 2020, 21 pages. Non-Final Office Action for U.S. Appl. No. 16/426,527, dated Nov. 20, 2020, 7 pages. Final Office Action for U.S. Appl. No. 16/204,214, dated Nov. 30, 2020, 15 pages. Notice of Allowance for U.S. Appl. No. 16/204,214, dated Feb. 17, 2021, 11 pages. Advisory Action for U.S. Appl. No. 16/454,809, dated Oct. 23, 2020, 3 pages. QuayleAction for U.S.Appl. No. 16/426,527, mailed May 26, 2022, 5 pages. Final Office Action for U.S. Appl. No. 16/427,019, dated Apr. 12, 2022, 15 pages. Advisory Action for U.S. Appl. No. 16/427,019, dated Jun. 2, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated May 13, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Jun. 15, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated May 6, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Jun. 10, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Apr. 8, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated May 13, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Jun. 10, 2022, 4 pages. Notice of Allowance for U.S. Appl. No. 17/109,935, dated Apr. 20, 2022, 15 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/063093, dated May 4, 2022, 15 pages. Invitation to Pay Additional Fees and Partial International Search for International PatentApplication No. PCT/US2021/063094, dated Apr. 19, 2022, 15 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/062509, dated Mar. 29, 2022, 20 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/426,527, dated Aug. 18, 2021, 4 pages. Advisory Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,551, dated Sep. 13, 2021, 3 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,551, dated Oct. 21, 2021, 8 pages. Advisory Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,573, dated Sep. 10, 2021, 3 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,573, dated Oct. 21, 2021, 7 pages. Non-Final Office Action for U.S. Appl. No. 16/678,586, dated Aug. 12, 2021, 16 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,602, dated Aug. 12, 2021, 11 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Aug. 26, 2021, 4 pages. Decision to Grant for Japanese Patent Application No. 2020119130, dated Sep. 7, 2021, 4 pages. SecondOfficeActionforChinesePatentApplicationNo.201680058198. 6, dated Sep. 8, 2021, 8 pages. First OfficeAction for Chinese PatentApplication No. 201980079375. 2, dated May 5, 2023, 17 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102895, dated May 30, 2023, 18 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102896, dated Jul. 4, 2023, 19 pages. Notice of Allowance for U.S. Appl. No. 16/454,809, dated Nov. 25, 2020, 8 pages. Non-Final Office Action for U.S. Appl. No. 16/427,019, dated Nov. 19, 2020, 19 pages. Non-Final Office Action for U.S. Appl. No. 16/678,573, dated Feb. 19, 2021, 11 pages. Non-Final Office Action for U.S. Appl. No. 16/678,602, dated Feb. 19, 2021, 10 pages. First OfficeAction for Chinese PatentApplication No. 201680058198. 6, dated Dec. 29, 2020, 14 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/025591, dated Oct. 15, 2020, 6 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/034645, dated Jan. 14, 2021, 9 pages. Advisory Action for U.S. Appl. No. 16/390,496, dated Mar. 1, 2021, 3 pages. Notice of Allowance for U.S. Appl. No. 16/390,496, dated Apr. 5, 2021, 7 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, dated May 14, 2021, 9 pages. Final Office Action for U.S. Appl. No. 16/427,019, dated May 21, 2021, 16 pages. Non-Final Office Action for U.S. Appl. No. 16/678,551, dated Apr. 7, 2021, 9 pages. Final Office Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,551, dated Jun. 28, 2021, 9 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 16/678,573, dated May 7, 2021, 2 pages. Final Office Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,573, dated Jun. 28, 2021, 10 pages. Notice of Allowance for U.S. Appl. No. 16/678,619, dated Jul. 8, 2021, 10 pages. Final Office Action for U.S. Appl. No. 16/678,602, dated Jun. 1, 2021, 9 pages. Notice of Reasons for Refusal for Japanese Patent Application No. 2020119130, dated Jun. 29, 2021, 4 pages. Notice of Reasons for Rejection for Japanese PatentApplication No. 2019507765, dated Jun. 28, 2021, 4 pages. Search Report for Japanese Patent Application No. 2019507768, dated Jul. 15, 2021, 42 pages. Notice of Reasons for Refusal for Japanese Patent Application No. 2019507768, dated Jul. 26, 2021, 4 pages. Supplementary Examination Report for Singapore Patent Applica- tion No. 11201901194S, dated Mar. 10, 2021, 3 pages. Reasons for Rejection for Japanese PatentApplication No. 2019507767, dated Jun. 25, 2021, 5 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/063460, dated Jun. 10, 2021, 9 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/055317, dated Apr. 22, 2021, 11 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/055321, dated Apr. 22, 2021, 14 pages. Office Action for Taiwanese Patent Application No. 108140788, dated Mar. 25, 2021, 18 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Jan. 10, 2023, 4 pages. First OfficeAction for Chinese PatentApplication No. 201780063121. 2, dated Nov. 23, 2022, 12 pages.
Control of Selectivity between SiGe and Si in Isotropic Etching Processes. Preliminary Examination Report for Taiwanese Patent Application No. 108140788, dated Dec. 9, 2022, 13 pages. Non-Final Office Action for U.S. Appl. No. 16/426,527, dated Feb. 9, 2023, 9 pages. Non-Final Office Action for U.S. Appl. No. 17/330,787, dated Oct. 17, 2022, 10 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,586, dated Sep. 13, 2022, 11 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Oct. 5, 2022, 4 pages. Non-Final Office Action for U.S. Appl. No. 16/844,406, dated Oct. 6, 2022, 17 pages. Corrected Notice of Allowability U.S. Appl. No. 17/109,935, dated Sep. 14, 2022, 4 pages. Notice of Preliminary Rejection for Korean Patent Application No. 10-2018-7006660, dated Sep. 3, 2022, 6 pages. Advisory Action for U.S. Appl. No. 17/102,957, dated Oct. 27, 2022, 7 pages. Borel, S. et al., “Control of Selectivity between SiGe and Si in Isotropic Etching Processes,” Japanese Journal of Applied Physics, vol. 43, No. 6B, 2004, pp. 3964-3966. Non-Final Office Action for U.S. Appl. No. 16/427,019, dated Dec. 2, 2021, 17 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Nov. 24, 2021, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Jan. 27, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Nov. 24, 2021, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Jan. 27, 2022, 3 pages. Final Office Action for U.S. Appl. No. 16/678,586, dated Nov. 22, 2021, 15 pages. Advisory Action for U.S. Appl. No. 16/678,586, dated Jan. 26, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Nov. 24, 2021, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Dec. 30, 2021, 4 pages. Decision of Rejection for Chinese Patent Application No. 201680058198.6, dated Nov. 12, 2021, 6 pages. Examination Report for European PatentApplication No. 17755402. 9, dated Dec. 20, 2021, 12 pages. Examination Report for European PatentApplication No. 17755403. 7, dated Dec. 20, 2021, 13 pages. Notice ofAllowance for Japanese PatentApplication No. 2019507767, dated Jan. 19, 2021, 6 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/043968, dated Nov. 19, 2021, 15 pages. Notice of Allowance for U.S. Appl. No. 16/390,496, mailed Aug. 24, 2023, 24 pages. Notice of Allowance for U.S. Appl. No. 17/970,078, mailed Aug. 25, 2023, 10 pages. Advisory Action for U.S. Appl. No. 16/678,551, mailed Jul. 28, 2023, 3 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 16/678,551, mailed Aug. 22, 2023, 7 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 16/844,406, mailed Sep. 13, 2023, 2 pages. Final Office Action for U.S. Appl. No. 16/844,406, mailed Sep. 28, 2023, 7 pages. Final Office Action for U.S. Appl. No. 17/121,194, mailed Sep. 7, 2023, 24 pages. Notice of Allowance for U.S. Appl. No. 17/389,977, mailed Aug. 16, 2023, 8 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/389,977, mailed Sep. 20, 2023, 5 pages. Office Action for Taiwanese Patent Application No. 108119536, mailed Jul. 13, 2023, 6 pages. First OfficeAction for Chinese PatentApplication No. 201980077328. 4, mailed Aug. 28, 2023, 15 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026777, mailed Jul. 28, 2023, 12 pages. Quayle Action for U.S. Appl. No. 16/678,551, mailed Oct. 4, 2023, 6 pages. Non-Final Office Action for U.S. Appl. No. 16/678,602, mailed Oct. 6, 2023, 18 pages. Notice of Allowance for U.S. Appl. No. 17/121,194, mailed Oct. 23, 2023, 8 pages. Final Office Action for U.S. Appl. No. 17/102,957, mailed Oct. 26, 2023, 27 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/389,977, mailed Oct. 25, 2023, 5 pages. Board Opinion for Chinese Patent Application No. 201780058052. 6, mailed Oct. 8, 2023, 15 pages. First OfficeAction for Chinese PatentApplication No. 201980050433. 9, mailed Sep. 4, 2023, 20 pages. First OfficeAction for Chinese PatentApplication No. 201980090320. 1, mailed Sep. 5, 2023, 11 pages. Office Action for Taiwanese Patent Application No. 109102892, mailed Sep. 13, 2023, 18 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102893, mailed Sep. 7, 2023, 10 pages. Notice of Allowance for for U.S. Appl. No. 16/844,406, mailed, Nov. 16, 2023, 11 pages. Notice of Allowance for U.S. Appl. No. 16/678,551, mailed Dec. 7, 2023, 9 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/389,977, mailed Nov. 24, 2023, 5 pages. Office Action for Taiwanese Patent Application No. 108119536, mailed Nov. 24, 2023, 22 pages. Preliminary Examination Report for Taiwanese Patent Application No. 108143149, mailed Oct. 18, 2023, 30 pages. SecondOfficeActionforChinesePatentApplicationNo.201980079375. 2, mailed Nov. 21, 2023, 17 pages. Office Action for Taiwanese Patent Application No. 109102895, dated Nov. 30, 2023, 16 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, mailed Jan. 22, 2024, 10 pages. Non-Final Office Action for U.S. Appl. No. 18/306,599, mailed Jan. 22, 2024, 11 pages. Notice of Allowance for U.S. Appl. No. 17/389,977, mailed Jan. 18, 2024, 17 pages. Board Opinion for Chinese Patent Application No. 201780058052. 6, mailed Jan. 15, 2024, 28 pages. Reasons for Rejection forTaiwanese PatentApplication No. 109102896, mailed Dec. 13, 2023, 17 pages. Notice of Allowance for U.S. Appl. No. 18/306,599, mailed Apr. 10, 2024, 8 pages. Notice of Allowance and Applicant-Initiated Interview Summary for U.S. Appl. No. 16/678,602, mailed Mar. 7, 2024, 14 pages. Notice ofAllowance forTaiwanese PatentApplication No. 108119536, mailed Apr. 30, 2024, 4 pages. SecondOfficeActionforChinesePatentApplicationNo.201980077328. 4, mailed Mar. 29, 2024, 14 pages. Office Action for Taiwanese Patent Application No. 113110397, mailed May 7, 2024, 10 pages. Notice of Prelimiary Rejection for Korean Patent Application No. 1020217026747, mailed May 1, 2024, 5 pages. Notice ofAllowance for U.S.Appl. No. 18/151,235, mailed May 29, 2024, 22 pages. Notice of Allowance for U.S. Appl. No. 17/102,957, mailed Jun. 25, 2024, 11 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026777, mailed Apr. 23, 2024, 15 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026784, mailed May 28, 2024, 13 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026776, mailed May 20, 2024, 4 pages.
Notice of Preliminary Rejection for Korean Patent Application No. 1020217026748, mailed May 22, 2024, 15 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026781, mailed May 29, 2024, 13 pages.

Cited non-patent literature · 31

US 10,896,908 B2, 01/2021, Costa et al. (withdrawn)
RF SOI CMOS Technology on Commercial Trap-Rich High Resistivity SOI Wafer. Ali, K. Ben et al., “RF SOI CMOS Technology on Commercial Trap-Rich High Resistivity SOI Wafer,” 2012 IEEE International SOI Conference (SOI), Oct. 1-4, 2012, Napa, California, IEEE, 2 pages. Anderson, D.R., “Thermal Conductivity of Polymers,” Sandia Cor- poration, Mar. 8, 1966, pp. 677-690. Author Unknown, “96% Alumina, thick-ﬁlm, as ﬁred,” MatWeb, Date Unknown, date accessed Apr. 6, 2016, 2 pages, http://www. matweb.com/search/DataSheet.aspx?MatGUID= 3996a734395a4870a9739076918c4297&ckck=1. Author Unknown, “CoolPoly D5108 Thermally Conductive Polyphenylene Sulﬁde (PPS),” Cool Polymers, Inc., Aug. 8, 2007, 2 pages. Author Unknown, “CoolPoly D5506 Thermally Conductive Liquid Crystalline Polymer (LCP),” Cool Polymers, Inc., Dec. 12, 2013, 2 pages. Author Unknown, “CoolPoly D-Series—Thermally Conductive Dielec- tric Plastics,” Cool Polymers, Retrieved Jun. 24, 2013, http://coolpolymers.com/dseries.asp, 1 page. Author Unknown, “CoolPoly E2 Thermally Conductive Liquid Crystalline Polymer (LCP),” Cool Polymers, Inc., Aug. 8, 2007, http://www.coolpolymers.com/Files/DS/Datasheet_e2.pdf, 1 page.
CoolPoly E3605Thermally Conductive Polyamide 4,6 (PA 4,6). Author Unknown, “CoolPoly E3605Thermally Conductive Polyamide 4,6 (PA 4,6),” Cool Polymers, Inc., Aug. 4, 2007, 1 page, http://www.coolpolymers.com/Files/DS/Datasheet_e3605.pdf. Author Unknown, “CoolPoly E5101 Thermally Conductive Polyphenylene Sulﬁde (PPS),” Cool Polymers, Inc., Aug. 27, 2007, 1 page, http://www.coolpolymers.com/Files/DS/Datasheet_e5101. pdf. Author Unknown, “CoolPoly E5107 Thermally Conductive Polyphenylene Sulﬁde (PPS),” Cool Polymers, Inc., Aug. 8, 2007, 1 page, http://coolpolymers.com/Files/DS/Datasheet_e5107.pdf. Author Unknown, “CoolPoly Selection Tool,” Cool Polymers, Inc., 2006, 1 page, http://www.coolpolymers.com/select.asp?Application= Substrates+%26+Electcronic_Packaging. Author Unknown, “CoolPoly Thermally Conductive Plastics for Dielectric Heat Plates,” Cool Polymers, Inc., 2006, 2 pages, http://www.coolpolymers.com/heatplate.asp. Author Unknown, “CoolPoly Thermally Conductive Plastics for Substrates and Electronic Packaging,” Cool Polymers, Inc., 2005, 1 page. Author Unknown, “Electrical Properties of Plastic Materials,” Pro- fessional Plastics, Oct. 28, 2011, http://www.professionalplastics. com/professionalplastics/ElectricalPropertiesofPlastics.pdf, accessed Dec. 18, 2014, 4 pages. Author Unknown, “Fully Sintered Ferrite Powders,” Powder Pro- cessing and Technology, LLC, Date Unknown, 1 page. Author Unknown, “Heat Transfer,” Cool Polymers, Inc., 2006, http://www.coolpolymers.com/heattrans.html, 2 pages. Author Unknown, “Hysol UF3808,” Henkel Corporation, Technical Data Sheet, May 2013, 2 pages. Author Unknown, “PolyOne Therma-Tech™LC-5000C TC LCP,”
Sapphire substrate. MatWeb, Date Unknown, date accessed Apr. 6, 2016, 2 pages, http://www.matweb.com/search/datasheettext.aspx?matguid= 89754e8bb26148d083c5ebb05a0cbff1. Author Unknown, “Sapphire substrate,” from CRC Handbook of Chemistry and Physics, Date Unknown, 1 page. Author Unknown, “Thermal Properties of Plastic Materials,” Pro- fessional Plastics, Aug. 21, 2010, http://www.professionalplastics. com/professionalplastics/ThermalPropertiesofPlasticMaterials.pdf, accessed Dec. 18, 2014, 4 pages. Author Unknown, “Thermal Properties of Solids,” PowerPoint Presentation, No Date, 28 slides, http://www.phys.huji.ac.il/Phys_ Hug/Lectures/77602/PHONONS_2_thermal.pdf. Author Unknown, “Thermal Resistance & Thermal Conductance,” C-Therm Technologies Ltd., accessed Sep. 19, 2013, 4 pages, http://www.ctherm.com/products/tci_thermal_conductivity/helpful_ links_tools/thermal_resistance_thermal_conductance/. Author Unknown, “The Technology: Akhan’s Approach and Solu- tion: The Miraj Diamond™Platform,” 2015, accessed Oct. 9, 2016, http://www.akhansemi.com/technology.html#the-miraj-diamond- platform, 5 pages. Beck, D., et al., “CMOS on FZ-High Resistivity substrate for Monolithic Integration of SiGe-RF-Circuitry and Readout Electron- ics,” IEEE Transactions on Electron Devices, vol. 44, No. 7, Jul. 1997, pp. 1091-1101. Botula, A., et al., “A Thin-Film SOI 180nm CMOS RF Switch Technology,” IEEE Topical Meeting on Silicon Monolithic Inte- grated Circuits in RF Systems, (SiRF ’09), Jan. 2009, pp. 1-4. Carroll, M., et al., “High-Resistivity SOI CMOS Cellular Antenna Switches,” Annual IEEE Compound Semiconductor Integrated Cir- cuit Symposium, (CISC 2009), Oct. 2009, pp. 1-4. Colinge, J.P., et al., “A Low-Voltage, Low-Power Microwave SOI MOSFET,” Proceedings of 1996 IEEE International SOI Confer- ence, Oct. 1996, pp. 128-129. Costa, J. et al., “Integrated MEMS Switch Technology on SOI- CMOS,” Proceedings of Hilton Head Workshop: A Solid-State
Silicon RFCMOS SOI Technology with Above-IC MEMS Integration for Front End Wireless Applications. Sensors, Actuators and Microsystems Workshop, Jun. 1-5, 2008, Hilton Head Island, SC, IEEE, pp. 900-903. Costa, J. et al., “Silicon RFCMOS SOI Technology with Above-IC MEMS Integration for Front End Wireless Applications,” Bipolar/BiCMOS Circuits and Technology Meeting, 2008, BCTM 2008, IEEE, pp. 204-207. Costa, J., “RFCMOS SOI Technology for 4G Reconﬁgurable RF Solutions,” Session WEC1-2, Proceedings of the 2013 IEEE Inter- national Microwave Symposium, 4 pages.
RF Non-Linearities from Si-Based Substrates. Esfeh, Babak Kazemi et al., “RF Non-Linearities from Si-Based Substrates,” 2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Apr. 2-4, 2014, IEEE, 3 pages. Finne, R. M. et al., “A Water-Amine-Complexing Agent System for Etching Silicon,” Journal of the Electrochemical Society, vol. 114, No. 9, Sep. 1967, pp. 965-970. Gamble, H. S. et al., “Low-Loss CPW Lines on surface Stabilized High-Resistivity Silicon,” IEEE Microwave and Guided Wave Letters, vol. 9, No. 10, Oct. 1999, pp. 395-397.
A Review of Dielectric Polymer Composites with High Thermal Conductivity. Huang, Xingyi, et al., “A Review of Dielectric Polymer Composites with High Thermal Conductivity,” IEEE Electrical Insulation Maga- zine, vol. 27, No. 4, Jul./Aug. 2011, pp. 8-16. Joshi, V. et al., “MEMS Solutions in RF Applications,” 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Uniﬁed Con- ference (S3S), Oct. 2013, IEEE, 2 pages.
Study of FCMBGA with Low CTE Core substrate. Jung, Boo Yang, et al., “Study of FCMBGA with Low CTE Core substrate,” 2009 Electronic Components and Technology Confer- ence, May 2009, pp. 301-304. Kerr, D.C., et al., “Identiﬁcation of RF Harmonic Distortion on Si Substrates and Its Reduction Using a Trap-Rich Layer,” IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, (SiRF 2008), Jan. 2008, pp. 151-154. Lederer, D., et al., “New substrate Passivation Method Dedicated to HR SOI Wafer Fabrication with Increased substrate Resistivity,” IEEE Electron Device Letters, vol. 26, No. 11, Nov. 2005, pp. 805-807.
Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers. Lederer, Dimitri et al., “Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers,” Solid-State Electronics, vol. 47, No. 11, Nov. 2003, pp. 1927-1936.
Integration of III-V materials and Si- CMOS through double layer transfer process. Lee, Kwang Hong et al., “Integration of III-V materials and Si- CMOS through double layer transfer process,” Japanese Journal of Applied Physics, vol. 54, Jan. 2015, pp. 030209-1 to 030209-5.
Modeling of SOI FET for RF Switch Applications. Lee, Tzung-Yin, et al., “Modeling of SOI FET for RF Switch Applications,” IEEE Radio Frequency Integrated Circuits Sympo- sium, May 23-25, 2010, Anaheim, CA, IEEE, pp. 479-482. Lu, J.Q., et al., “Evaluation Procedures for Wafer Bonding and Thinning of Interconnect Test Structures for 3D ICs,” Proceedings of the IEEE 2003 International Interconnect Technology Confer- ence, Jun. 2-4, 2003, pp. 74-76. Mamunya, Ye.P., et al., “Electrical and Thermal Conductivity of Polymers Filled with Metal Powders,” European Polymer Journal, vol. 38, 2002, pp. 1887-1897.
RF MEMS-CMOS Device Integration. Mansour, Raafat R., “RF MEMS-CMOS Device Integration,” IEEE Microwave Magazine, vol. 14, No. 1, Jan. 2013, pp. 39-56. Mazure´, C. et al., “Advanced SOI Substrate Manufacturing,” 2004 IEEE International Conference on Integrated Circuit Design and Technology, 2004, IEEE, pp. 105-111. Micak, R. et al., “Photo-Assisted Electrochemical Machining of Micromechanical Structures,” Proceedings of Micro Electro Mechani- cal Systems, Feb. 7-10, 1993, Fort Lauderdale, FL, IEEE, pp. 225-229.
Monolithic Integration of RF-MEMS within CMOS. Morris, Art, “Monolithic Integration of RF-MEMS within CMOS,” 2015 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 27-29, 2015, IEEE, 2 pages. Niklaus, F., et al., “Adhesive Wafer Bonding,” Journal of Applied Physics, vol. 99, No. 3, 031101 (2006), 28 pages. Parthasarathy, S., et al., “RF SOI Switch FET Design and Modeling Tradeoffs for GSM Applications,” 2010 23rd International Confer- ence on VLSI Design, (VLSID ’10), Jan. 2010, pp. 194-199. Raskin, J.P., et al., “Coupling Effects in High-Resistivity SIMOX Substrates for VHF and Microwave Applications,” Proceedings of 1995 IEEE International SOI Conference, Oct. 1995, pp. 62-63. Non-Final Office Action for U.S. Appl. No. 16/426,527, dated Feb. 16, 2022, 9 pages.
Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Mar. 9, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Mar. 31, 2022, 3 pages. Non-Final Office Action for U.S. Appl. No. 16/678,586, dated Mar. 3, 2022, 14 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Feb. 2, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Mar. 9, 2022, 4 pages. Non-Final Office Action for U.S. Appl. No. 16/844,406, dated Mar. 14, 2022, 16 pages. Non-Final Office Action for U.S. Appl. No. 17/102,957, dated Feb. 17, 2022, 9 pages. Summons to Attend for European Patent Application No. 16751791. 1, mailed Feb. 28, 2022, 10 pages. Decision to Grant for Japanese Patent Application No. 2019507765, dated Feb. 10, 2022, 6 pages. Decision to Grant for Japanese Patent Application No. 2019507768, dated Feb. 10, 2022, 6 pages. Office Letter for Taiwanese Patent Application No. 108140788, dated Jan. 5, 2022, 16 pages. Advisory Action for U.S. Appl. No. 16/427,019, dated Aug. 2, 2021, 3 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/034699, dated Aug. 5, 2021, 9 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014662, dated Aug. 5, 2021, 11 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014665, dated Aug. 5, 2021, 10 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014666, dated Aug. 5, 2021, 11 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014667, dated Aug. 5, 2021, 8 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014669, dated Aug. 5, 2021, 9 pages. Notice of Allowance for U.S. Appl. No. 15/287,273, dated Jun. 30, 2017, 8 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/287,273, dated Jul. 21, 2017, 5 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Sep. 7, 2017, 5 pages. Extended European Search Report for European Patent Application No. 15184861.1, dated Jan. 25, 2016, 6 pages. Office Action of the Intellectual Property Office for Taiwanese Patent Application No. 104130224, dated Jun. 15, 2016, 9 pages. Non-Final Office Action for U.S. Appl. No. 14/885,202, dated Apr. 14, 2016, 5 pages. Final Office Action for U.S. Appl. No. 14/885,202, dated Sep. 27, 2016, 7 pages. Advisory Action for U.S. Appl. No. 14/885,202, dated Nov. 29, 2016, 3 pages. Notice of Allowance for U.S. Appl. No. 14/885,202, dated Jan. 27, 2017, 7 pages. Notice of Allowance for U.S. Appl. No. 14/885,202, dated Jul. 24, 2017, 8 pages. Notice of Allowance for U.S. Appl. No. 14/885,243, dated Aug. 31, 2016, 8 pages. Non-Final Office Action for U.S. Appl. No. 12/906,689, dated May 27, 2011, 13 pages. Non-Final Office Action for U.S. Appl. No. 12/906,689, dated Nov. 4, 2011, 20 pages. Search Report for Japanese Patent Application No. 2011-229152, dated Feb. 22, 2013, 58 pages. Office Action for Japanese Patent Application No. 2011-229152, drafted May 10, 2013, 7 pages. Final Rejection for Japanese Patent Application No. 2011-229152, drafted Oct. 25, 2013, 2 pages. International Search Report and Written Opinion for PCT/US2016/045809, dated Oct. 7, 2016, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/652,867, dated Oct. 10, 2017, 5 pages.
Chapter 9: Lamination. Bernheim et al., “Chapter 9: Lamination,” Tools and Manufacturing Engineers Handbook (book), Apr. 1, 1996, Society of Manufactur- ing Engineers, p. 9-1. Fillion R. et al., “Development of a Plastic Encapsulated Multichip Technology for High Volume, Low Cost Commercial Electronics,” Electronic Components and Technology Conference, vol. 1, May 1994, IEEE, 5 pages.
New Thermoplastic Polymer Sub- strate for Microstrip Antennas at 60 GHz. Henawy, Mahmoud Al et al., “New Thermoplastic Polymer Sub- strate for Microstrip Antennas at 60 GHz,” German Microwave Conference, Mar. 15-17, 2010, Berlin, Germany, IEEE, pp. 5-8. International Search Report and Written Opinion for PCT/US2017/046744, dated Nov. 27, 2017, 17 pages. International Search Report and Written Opinion for PCT/US2017/046758, dated Nov. 16, 2017, 19 pages. International Search Report and Written Opinion for PCT/US2017/046779, dated Nov. 29, 2017, 17 pages. Non-Final Office Action for U.S. Appl. No. 15/616,109, dated Oct. 23, 2017, 16 pages. Corrected Notice of Allowability for U.S. Appl. No. 14/851,652, dated Oct. 20, 2017, 5 pages. Final Office Action for U.S. Appl. No. 15/262,457, dated Dec. 19, 2017, 12 pages. Supplemental Notice of Allowability and Applicant-Initiated Inter- view Summary for U.S. Appl. No. 15/287,273, dated Oct. 18, 2017, 6 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Nov. 2, 2017, 5 pages. Non-Final Office Action for U.S. Appl. No. 15/491,064, dated Jan. 2, 2018, 9 pages. Notice of Allowance for U.S. Appl. No. 14/872,910, dated Nov. 17, 2017, 11 pages. Notice of Allowance for U.S. Appl. No. 15/648,082, dated Nov. 29, 2017, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/652,826, dated Nov. 3, 2017, 5 pages. Notice of Allowance for U.S. Appl. No. 15/229,780, dated Oct. 3, 2017, 7 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Jan. 17, 2018, 5 pages. Notice of Allowance for U.S. Appl. No. 15/498,040, dated Feb. 20, 2018, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/387,855, dated Jan. 16, 2018, 7 pages. Non-Final Office Action for U.S. Appl. No. 15/795,915, dated Feb. 23, 2018, 6 pages. International Preliminary Report on Patentability for PCT/US2016/045809, dated Feb. 22, 2018, 8 pages. Advisory Action and Applicant-Initiated Interview Summary for U.S. Appl. No. 15/262,457, dated Feb. 28, 2018, 5 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Feb. 23, 2018, 5 pages. Non-Final Office Action for U.S. Appl. No. 15/676,415, dated Mar. 27, 2018, 14 page. Non-Final Office Action for U.S. Appl. No. 15/676,621, dated Mar. 26, 2018, 16 pages. Notice of Allowance for U.S. Appl. No. 15/795,915, dated Jun. 15, 2018, 7 pages. Final Office Action for U.S. Appl. No. 15/387,855, dated May 24, 2018, 9 pages. Non-Final Office Action for U.S. Appl. No. 15/262,457, dated Apr. 19, 2018, 10 pages. Notice of Allowance for U.S. Appl. No. 15/491,064, dated Apr. 30, 2018, 9 pages.
Non-Final Office Action for U.S. Appl. No. 15/601,858, dated Jun. 26, 2018, 12 pages. Notice of Allowance for U.S. Appl. No. 15/616,109, dated Jul. 2, 2018, 7 pages. Notice of Allowance for U.S. Appl. No. 15/676,621, dated Jun. 5, 2018, 8 pages.
Substrate Crosstalk Reduction Using SOI Technology. Raskin, Jean-Pierre et al., “Substrate Crosstalk Reduction Using SOI Technology,” IEEE Transactions on Electron Devices, vol. 44, No. 12, Dec. 1997, pp. 2252-2261. Rong, B., et al., “Surface-Passivated High-Resistivity Silicon Sub- strates for RFICs,” IEEE Electron Device Letters, vol. 25, No. 4, Apr. 2004, pp. 176-178.
Plastics that Conduct Heat. Sherman, Lilli M., “Plastics that Conduct Heat,” Plastics Technol- ogy Online, Jun. 2001, Retrieved May 17, 2016, http://www.ptonline. com/articles/plastics-that-conduct-heat, Gardner Business Media, Inc., 5 pages. Tombak, A., et al., “High-Efficiency Cellular Power Ampliﬁers Based on a Modiﬁed LDMOS Process on Bulk Silicon and Silicon- On-Insulator Substrates with Integrated Power Management Cir- cuitry,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, No. 6, Jun. 2012, pp. 1862-1869. Yamanaka, A., et al., “Thermal Conductivity of High-Strength Polyetheylene Fiber and Applications for Cryogenic Use,” Interna- tional Scholarly Research Network, ISRN Materials Science, vol. 2011, Article ID 718761, May 25, 2011, 10 pages. Non-Final Office Action for U.S. Appl. No. 13/852,648, dated Jul. 18, 2013, 20 pages. Final Office Action for U.S. Appl. No. 13/852,648, dated Nov. 26, 2013, 21 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 13/852,648, dated Jan. 27, 2014, 4 pages. Advisory Action for U.S. Appl. No. 13/852,648, dated Mar. 7, 2014, 4 pages. Notice of Allowance for U.S. Appl. No. 13/852,648, dated Jun. 16, 2014, 9 pages. Notice of Allowance for U.S. Appl. No. 13/852,648, dated Sep. 26, 2014, 8 pages. Notice of Allowance for U.S. Appl. No. 13/852,648, dated Jan. 22, 2015, 8 pages. Non-Final Office Action for U.S. Appl. No. 13/852,648, dated Jun. 24, 2015, 20 pages. Final Office Action for U.S. Appl. No. 13/852,648, dated Oct. 22, 2015, 20 pages. Non-Final Office Action for U.S. Appl. No. 13/852,648, dated Feb. 19, 2016, 12 pages. Final Office Action for U.S. Appl. No. 13/852,648, dated Jul. 20, 2016, 14 pages. Non-Final Office Action for U.S. Appl. No. 14/315,765, dated Jan. 2, 2015, 6 pages. Final Office Action for U.S. Appl. No. 14/315,765, dated May 11, 2015, 17 pages. Advisory Action for U.S. Appl. No. 14/315,765, dated Jul. 22, 2015, 3 pages. Non-Final Office Action for U.S. Appl. No. 14/260,909, dated Mar. 20, 2015, 20 pages. Final Office Action for U.S. Appl. No. 14/260,909, dated Aug. 12, 2015, 18 pages. Non-Final Office Action for U.S. Appl. No. 14/261,029, dated Dec. 5, 2014, 15 pages. Notice of Allowance for U.S. Appl. No. 14/261,029, dated Apr. 27, 2015, 10 pages. Corrected Notice of Allowability for U.S. Appl. No. 14/261,029, dated Nov. 17, 2015, 5 pages. Non-Final Office Action for U.S. Appl. No. 14/529,870, dated Feb. 12, 2016, 14 pages. Notice of Allowance for U.S. Appl. No. 14/529,870, dated Jul. 15, 2016, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/293,947, dated Apr. 7, 2017, 12 pages. Notice of Allowance for U.S. Appl. No. 15/293,947, dated Aug. 14, 2017, 7 pages. Non-Final Office Action for U.S. Appl. No. 14/715,830, dated Apr. 13, 2016, 16 pages. Final Office Action for U.S. Appl. No. 14/715,830, dated Sep. 6, 2016, 13 pages. Advisory Action for U.S. Appl. No. 14/715,830, dated Oct. 31, 2016, 6 pages. Notice of Allowance for U.S. Appl. No. 14/715,830, dated Feb. 10, 2017, 8 pages. Notice of Allowance for U.S. Appl. No. 14/715,830, dated Mar. 2, 2017, 8 pages. Non-Final Office Action for U.S. Appl. No. 14/851,652, dated Oct. 7, 2016, 10 pages. Notice of Allowance for U.S. Appl. No. 14/851,652, dated Apr. 11, 2017, 9 pages. Corrected Notice of Allowance for U.S. Appl. No. 14/851,652, dated Jul. 24, 2017, 6 pages. Corrected Notice of Allowance for U.S. Appl. No. 14/851,652, dated Sep. 6, 2017, 5 pages. Notice of Allowance for U.S. Appl. No. 14/959,129, dated Oct. 11, 2016, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/173,037, dated Jan. 10, 2017, 8 pages. Final Office Action for U.S. Appl. No. 15/173,037, dated May 2, 2017, 13 pages. Advisory Action for U.S. Appl. No. 15/173,037, dated Jul. 20, 2017, 3 pages. Notice of Allowance for U.S. Appl. No. 15/173,037, dated Aug. 9, 2017, 7 pages. Non-Final Office Action for U.S. Appl. No. 15/085,185, dated Feb. 15, 2017, 10 pages. Non-Final Office Action for U.S. Appl. No. 15/085,185, dated Jun. 6, 2017, 5 pages. Non-Final Office Action for U.S. Appl. No. 15/229,780, dated Jun. 30, 2017, 12 pages. Non-Final Office Action for U.S. Appl. No. 15/262,457, dated Aug. 7, 2017, 10 pages. Notice of Allowance for U.S. Appl. No. 15/408,560, dated Sep. 25, 2017, 8 pages. Notice of Allowance for U.S. Appl. No. 15/287,202, dated Aug. 25, 2017, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/353,346, dated May 23, 2017, 15 pages. Notice of Allowance for U.S. Appl. No. 15/353,346, dated Sep. 25, 2017, 9 pages. Notice of Allowance for U.S. Appl. No. 16/427,019, dated Mar. 10, 2023, 10 pages. Non-Final Office Action for U.S. Appl. No. 16/678,551, dated Mar. 28, 2023, 14 pages. Notice of Allowance for U.S. Appl. No. 17/573,112, dated Mar. 8, 2023, 8 pages. Notice of Allowance for U.S. Appl. No. 17/554,477, dated Mar. 7, 2023, 8 pages. Final Office Action for U.S. Appl. No. 16/844,406, dated Mar. 6, 2023, 13 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Mar. 1, 2023, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Apr. 12, 2023, 4 pages. Non-Final Office Action for U.S. Appl. No. 17/121,194, dated May 9, 2023, 22 pages. Non-Final Office Action for U.S. Appl. No. 17/102,957, dated Apr. 13, 2023, 24 pages. Non-Final Office Action for U.S. Appl. No. 17/389,977, dated Mar. 28, 2023, 10 pages. Written Decision on Registration for Korean Patent Application No. 10-2018-7006660, dated Feb. 24, 2023, 8 pages. Decision to Grant for Japanese Patent Application No. 2022032477, dated Mar. 14, 2023, 5 pages. Decision of Rejection for Chinese Patent Application No. 201780058052.6, dated Mar. 30, 2023, 16 pages.
Office Action for Taiwanese Patent Application No. 109102892, dated Apr. 14, 2023, 18 pages. Advisory Action for U.S. Appl. No. 16/844,406, dated May 12, 2023, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Apr. 11, 2022, 3 pages. Final Office Action for U.S. Appl. No. 16/844,406, dated Jun. 24, 2022, 17 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, dated Aug. 17, 2022, 7 pages. Non-Final Office Action for U.S. Appl. No. 16/427,019, dated Aug. 15, 2022, 17 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Jul. 14, 2022, 3 pages. Final Office Action for U.S. Appl. No. 16/678,586, dated Sep. 1, 2022, 7 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Jul. 14, 2022, 4 pages. Advisory Action for U.S. Appl. No. 16/844,406, dated Jul. 26, 2022, 3 pages. Corrected Notice of Allowability U.S. Appl. No. 17/109,935, dated Jul. 1, 2022, 4 pages. Corrected Notice of Allowability U.S. Appl. No. 17/109,935, dated Jul. 27, 2022, 4 pages. Final Office Action for U.S. Appl. No. 17/102,957, dated Aug. 18, 2022, 12 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/063094, dated Aug. 9, 2022, 24 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Sep. 2, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Sep. 2, 2022, 4 pages. Notice of Allowance for U.S. Appl. No. 16/390,496, dated Oct. 27, 2022, 21 pages. Notice of Allowance for U.S. Appl. No. 16/204,214, dated Oct. 28, 2022, 11 pages. Final Office Action for U.S. Appl. No. 16/427,019, dated Dec. 12, 2022, 19 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Oct. 4, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Nov. 2, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Dec. 7, 2022, 3 pages. Non-Final Office Action for U.S. Appl. No. 17/573,112, dated Dec. 9, 2022, 6 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Nov. 14, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Dec. 9, 2022, 4 pages. Non-Final Office Action for U.S. Appl. No. 17/554,477, dated Nov. 25, 2022, 6 pages. Notice of Allowance for U.S. Appl. No. 17/109,935, dated Oct. 28, 2022, 7 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Nov. 10, 2022, 4 pages. First OfficeAction for Chinese PatentApplication No. 201780062516. 0, dated Nov. 2, 2022, 10 pages. Notice of Reasons for Rejection for Japanese PatentApplication No. 2022032477, dated Oct. 3, 2022, 4 pages. First OfficeAction for Chinese PatentApplication No. 201780058052. 6, dated Nov. 2, 2022, 22 pages. Notice of Allowance for U.S. Appl. No. 17/330,787, dated Dec. 15, 2022, 7 pages. Non-Final Office Action for U.S. Appl. No. 15/676,693, dated May 3, 2018, 14 pages. Notice of Allowance for U.S. Appl. No. 15/789,107, dated May 18, 2018, 8 pages. Final Office Action for U.S. Appl. No. 15/616,109, dated Apr. 19, 2018, 18 pages. Notice of Allowance for U.S. Appl. No. 15/676,693, dated Jul. 20, 2018, 8 pages. Notice of Allowance for U.S. Appl. No. 15/695,629, dated Jul. 11, 2018, 12 pages. Notice of Allowance for U.S. Appl. No. 15/387,855, dated Aug. 10, 2018, 7 pages. Notice of Allowance for U.S. Appl. No. 15/914,538, dated Aug. 1, 2018, 9 pages. Notice of Allowance and Applicant-Initiated Interview Summary for U.S. Appl. No. 15/262,457, dated Sep. 28, 2018, 16 pages. Corrected Notice of Allowance for U.S. Appl. No. 15/676,693, dated Aug. 29, 2018, 5 pages. Final Office Action for U.S. Appl. No. 15/601,858, dated Nov. 26, 2018, 16 pages. Non-Final Office Action for U.S. Appl. No. 15/945,418, dated Nov. 1, 2018, 13 pages. First OfficeAction for Chinese PatentApplication No. 201510746323. X, dated Nov. 2, 2018, 12 pages. Advisory Action for U.S. Appl. No. 15/601,858, dated Jan. 22, 2019, 3 pages. Notice of Allowance for U.S. Appl. No. 16/038,879, dated Jan. 9, 2019, 8 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated Jan. 11, 2019, 8 pages. International Preliminary Report on Patentability for PCT/US2017/046744, dated Feb. 21, 2019, 11 pages. International Preliminary Report on Patentability for PCT/US2017/046758, dated Feb. 21, 2019, 11 pages. International Preliminary Report on Patentability for PCT/US2017/046779, dated Feb. 21, 2019, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/992,613, dated Feb. 27, 2019, 15 pages. Non-Final Office Action for U.S. Appl. No. 15/695,579, dated Jan. 28, 2019, 8 pages. Notice of Allowance for U.S. Appl. No. 15/992,639, dated May 9, 2019, 7 pages. Notice of Allowance for U.S. Appl. No. 15/695,579, dated Mar. 20, 2019, 8 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated May 13, 2019, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/601,858, dated Apr. 17, 2019, 9 pages.
Smart GaN platform; Performance & Challenges. Tsai, Chun-Lin, et al., “Smart GaN platform; Performance & Challenges,” IEEE International Electron Devices Meeting, 2017, 4 pages.
Performance Enhancement of Flip-Chip Packaged AlGAaN/GaN HEMTs by Strain Engineering Design. Tsai, Szu-Ping., et al., “Performance Enhancement of Flip-Chip Packaged AlGAaN/GaN HEMTs by Strain Engineering Design,” IEEE Transcations on Electron Devices, vol. 63, Issue 10, Oct. 2016, pp. 3876-3881. Final Office Action for U.S. Appl. No. 15/992,613, dated May 24, 2019, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/873,152, dated May 24, 2019, 11 pages. Notice of Allowance for U.S. Appl. No. 16/168,327, dated Jun. 28, 2019, 7 pages.
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application. Lin, Yueh, Chin, et al., “Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application,” IEEE Elec- tronic Device Letters, vol. 38, Issue 8, 2017, 4 pages.
GaN-on-Si Switched Mode RF Power Ampliﬁers for Non-Constant Envelope Signals. Shukla, Shishir, et al., “GaN-on-Si Switched Mode RF Power Ampliﬁers for Non-Constant Envelope Signals,” IEEE Topical Conference on RF/Microwave Power Ampliﬁers for Radio and Wireless Applications, 2017, pp. 88-91. International Search Report and Written Opinion for International Patent Application No. PCT/US19/25591, dated Jun. 21, 2019, 7 pages. Notice of Reasons for Refusal for Japanese Patent Application No. 2015-180657, dated Jul. 9, 2019, 4 pages. Notice of Allowance for U.S. Appl. No. 15/601,858, dated Aug. 16, 2019, 8 pages. Advisory Action for U.S. Appl. No. 15/992,613, dated Jul. 29, 2019, 3 pages.
Detailed Simulation Study of a Reverse Embedded- SiGE Strained-Silicon MOSFET. Final Office Action for U.S. Appl. No. 15/873,152, dated Aug. 8, 2019, 13 pages. Notice of Allowance for U.S. Appl. No. 15/975,230, dated Jul. 22, 2019, 7 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated Aug. 28, 2019, 8 pages. Fiorenza, et al., “Detailed Simulation Study of a Reverse Embedded- SiGE Strained-Silicon MOSFET,” IEEE Transactions on Electron Devices, vol. 55, Issue 2, Feb. 2008, pp. 640-648. Fiorenza, et al., “Systematic study of thick strained silicon NMOSFETs for digital applications,” International SiGE Technology and Device Meeting, May 2006, IEEE, 2 pages. Huang, et al., “Carrier Mobility Enhancement in Strained Si-On- Insulator Fabricated by Wafer Bonding,” Symposium on VLSI
Effect of Germanium content on mobility enhancement for strained silicon FET. Technology, Digest of Technical Papers, 2001, pp. 57-58. Nan, et al., “Effect of Germanium content on mobility enhancement for strained silicon FET,” Student Conference on Research and Development, Dec. 2017, IEEE, pp. 154-157.
Performance Enhancement of Strained-Si MOSFETs Fabricated on a Chemical-Mechanical-Polished SiGE Substrate. Sugii, Nobuyuki, et al., “Performance Enhancement of Strained-Si MOSFETs Fabricated on a Chemical-Mechanical-Polished SiGE Substrate,” IEEE Transactions on Electron Devices, vol. 49, Issue 12, Dec. 2002, pp. 2237-2243.
Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers. Yin, Haizhou, et al., “Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers,” International Electron Devices Meeting, Dec. 2003, San Francisco, California, IEEE, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/695,579, dated Feb. 5, 2020, 5 pages. Notice of Allowance for U.S. Appl. No. 15/992,613, dated Sep. 23, 2019, 7 pages. Non-Final Office Action for U.S. Appl. No. 16/204,214, dated Oct. 9, 2019, 15 pages. Non-Final Office Action for U.S. Appl. No. 15/816,637, dated Oct. 31, 2019, 10 pages. Advisory Action for U.S. Appl. No. 15/873,152, dated Oct. 11, 2019, 3 pages. Notice of Allowance for U.S. Appl. No. 15/873,152, dated Dec. 10, 2019, 9 pages. Final Office Action for U.S. Appl. No. 16/426,527, dated May 25, 2023, 9 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, dated Jun. 22, 2023, 8 pages. Final Office Action for U.S. Appl. No. 16/678,551, dated May 26, 2023, 16 pages. Non-Final Office Action for U.S. Appl. No. 16/844,406, dated Jun. 23, 2023, 18 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102894, dated Apr. 7, 2023, 20 pages. Non-Final Office Action for U.S. Appl. No. 16/527,702, dated Jan. 10, 2020, 10 pages. Office Action for Japanese Patent Application No. 2018-526613, dated Nov. 5, 2019, 8 pages. Intention to Grant for European Patent Application No. 17757646.9, dated Feb. 27, 2020, 55 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/034645, dated Sep. 19, 2019, 14 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/063460, dated Feb. 25, 2020, 14 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/055317, dated Feb. 6, 2020, 17 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/055321, dated Jan. 27, 2020, 23 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/034699, dated Oct. 29, 2019, 13 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/695,579, dated Apr. 1, 2020, 4 pages. Final Office Action for U.S. Appl. No. 16/204,214, dated Mar. 6, 2020, 14 pages. Notice of Allowance for U.S. Appl. No. 15/816,637, dated Apr. 2, 2020, 8 pages. Notice of Allowance for U.S. Appl. No. 16/527,702, dated Apr. 9, 2020, 8 pages. Decision of Rejection for Japanese Patent Application No. 2015- 180657, dated Mar. 17, 2020, 4 pages. Dhar, S. et al., “Electron Mobility Model for Strained-Si Devices,” IEEE Transactions on Electron Devices, vol. 52, No. 4, Apr. 2005, IEEE, pp. 527-533. Notice of Allowance for U.S. Appl. No. 16/038,879, dated Apr. 15, 2020, 9 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated Apr. 30, 2020, 8 pages. Advisory Action for U.S. Appl. No. 16/204,214, dated Apr. 15, 2020, 3 pages. Examination Report for European PatentApplication No. 16751791. 1, dated Apr. 30, 2020, 15 pages. Notiﬁcation of Reasons for Refusal for Japanese Patent Application No. 2018-526613, dated May 11, 2020, 5 pages. Notice of Allowance for U.S. Appl. No. 15/873,152, dated May 11, 2020, 8 pages. Non-Final Office Action for U.S. Appl. No. 16/454,687, dated May 15, 2020, 14 pages. Welser, J. et al., “Electron Mobility Enhancement in Strained-Si N-Type Metal-Oxide-Semiconductor Field-Effect Transistors,” IEEE Electron Device Letters, vol. 15, No. 3, Mar. 1994, IEEE, pp. 100-102. Zeng, X. et al., “A Combination of Boron Nitride Nanotubes and Cellulose Nanoﬁbers for the Preparation of a Nanocomposite with High Thermal Conductivity,” ACS Nano, vol. 11, No. 5, 2017, American Chemical Society, pp. 5167-5178. Quayle Action for U.S. Appl. No. 16/703,251, mailed Jun. 26, 2020, 5 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/695,579, dated May 20, 2020, 4 pages. Notice of Allowability for U.S. Appl. No. 15/695,579, dated Jun. 25, 2020, 4 pages. Notice of Allowance for U.S. Appl. No. 16/368,210, dated Jun. 17, 2020, 10 pages. Non-Final Office Action for U.S. Appl. No. 16/374,125, dated Jun. 26, 2020, 12 pages. Non-Final Office Action for U.S. Appl. No. 16/390,496, dated Jul. 10, 2020, 17 pages. Non-Final Office Action for U.S. Appl. No. 16/204,214, dated May 19, 2020, 15 pages. Non-Final Office Action for U.S. Appl. No. 16/454,809, dated May 15, 2020, 12 pages. Examination Report for Singapore Patent Application No. 11201901193U, dated May 26, 2020, 6 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014662, dated May 7, 2020, 18 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014665, dated May 13, 2020, 17 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014666, dated Jun. 4, 2020, 18 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014667, dated May 18, 2020, 14 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014669, dated Jun. 4, 2020, 15 pages. Notice of Allowance for U.S. Appl. No. 16/454,687, dated Aug. 14, 2020, 7 pages. Decision to Grant for Japanese Patent Application No. 2018- 526613, dated Aug. 17, 2020, 5 pages.
Hybrid Bonding: From Concept to Commercializa- tion. Final Office Action for U.S. Appl. No. 16/454,809, dated Aug. 21, 2020, 12 pages. Von Trapp, F., “Hybrid Bonding: From Concept to Commercializa- tion,” Apr. 2, 2018, 3D InCities, https://www.3dincites.com/2018/04/hybrid-bonding-from-concept-to-commercialization/, 10 pages. Notice of Allowance for U.S. Appl. No. 16/703,251, dated Aug. 27, 2020, 8 pages. Notice of Allowance for U.S. Appl. No. 16/527,702, dated Nov. 13, 2020, 8 pages. Notice of Allowance for U.S. Appl. No. 16/374,125, dated Dec. 16, 2020, 9 pages. Final Office Action for U.S. Appl. No. 16/390,496, dated Dec. 24, 2020, 21 pages. Non-Final Office Action for U.S. Appl. No. 16/426,527, dated Nov. 20, 2020, 7 pages. Final Office Action for U.S. Appl. No. 16/204,214, dated Nov. 30, 2020, 15 pages. Notice of Allowance for U.S. Appl. No. 16/204,214, dated Feb. 17, 2021, 11 pages. Advisory Action for U.S. Appl. No. 16/454,809, dated Oct. 23, 2020, 3 pages. QuayleAction for U.S.Appl. No. 16/426,527, mailed May 26, 2022, 5 pages. Final Office Action for U.S. Appl. No. 16/427,019, dated Apr. 12, 2022, 15 pages. Advisory Action for U.S. Appl. No. 16/427,019, dated Jun. 2, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated May 13, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Jun. 15, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated May 6, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Jun. 10, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Apr. 8, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated May 13, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Jun. 10, 2022, 4 pages. Notice of Allowance for U.S. Appl. No. 17/109,935, dated Apr. 20, 2022, 15 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/063093, dated May 4, 2022, 15 pages. Invitation to Pay Additional Fees and Partial International Search for International PatentApplication No. PCT/US2021/063094, dated Apr. 19, 2022, 15 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/062509, dated Mar. 29, 2022, 20 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/426,527, dated Aug. 18, 2021, 4 pages. Advisory Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,551, dated Sep. 13, 2021, 3 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,551, dated Oct. 21, 2021, 8 pages. Advisory Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,573, dated Sep. 10, 2021, 3 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,573, dated Oct. 21, 2021, 7 pages. Non-Final Office Action for U.S. Appl. No. 16/678,586, dated Aug. 12, 2021, 16 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,602, dated Aug. 12, 2021, 11 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Aug. 26, 2021, 4 pages. Decision to Grant for Japanese Patent Application No. 2020119130, dated Sep. 7, 2021, 4 pages. SecondOfficeActionforChinesePatentApplicationNo.201680058198. 6, dated Sep. 8, 2021, 8 pages. First OfficeAction for Chinese PatentApplication No. 201980079375. 2, dated May 5, 2023, 17 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102895, dated May 30, 2023, 18 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102896, dated Jul. 4, 2023, 19 pages. Notice of Allowance for U.S. Appl. No. 16/454,809, dated Nov. 25, 2020, 8 pages. Non-Final Office Action for U.S. Appl. No. 16/427,019, dated Nov. 19, 2020, 19 pages. Non-Final Office Action for U.S. Appl. No. 16/678,573, dated Feb. 19, 2021, 11 pages. Non-Final Office Action for U.S. Appl. No. 16/678,602, dated Feb. 19, 2021, 10 pages. First OfficeAction for Chinese PatentApplication No. 201680058198. 6, dated Dec. 29, 2020, 14 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/025591, dated Oct. 15, 2020, 6 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/034645, dated Jan. 14, 2021, 9 pages. Advisory Action for U.S. Appl. No. 16/390,496, dated Mar. 1, 2021, 3 pages. Notice of Allowance for U.S. Appl. No. 16/390,496, dated Apr. 5, 2021, 7 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, dated May 14, 2021, 9 pages. Final Office Action for U.S. Appl. No. 16/427,019, dated May 21, 2021, 16 pages. Non-Final Office Action for U.S. Appl. No. 16/678,551, dated Apr. 7, 2021, 9 pages. Final Office Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,551, dated Jun. 28, 2021, 9 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 16/678,573, dated May 7, 2021, 2 pages. Final Office Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,573, dated Jun. 28, 2021, 10 pages. Notice of Allowance for U.S. Appl. No. 16/678,619, dated Jul. 8, 2021, 10 pages. Final Office Action for U.S. Appl. No. 16/678,602, dated Jun. 1, 2021, 9 pages. Notice of Reasons for Refusal for Japanese Patent Application No. 2020119130, dated Jun. 29, 2021, 4 pages. Notice of Reasons for Rejection for Japanese PatentApplication No. 2019507765, dated Jun. 28, 2021, 4 pages. Search Report for Japanese Patent Application No. 2019507768, dated Jul. 15, 2021, 42 pages. Notice of Reasons for Refusal for Japanese Patent Application No. 2019507768, dated Jul. 26, 2021, 4 pages. Supplementary Examination Report for Singapore Patent Applica- tion No. 11201901194S, dated Mar. 10, 2021, 3 pages. Reasons for Rejection for Japanese PatentApplication No. 2019507767, dated Jun. 25, 2021, 5 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/063460, dated Jun. 10, 2021, 9 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/055317, dated Apr. 22, 2021, 11 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/055321, dated Apr. 22, 2021, 14 pages. Office Action for Taiwanese Patent Application No. 108140788, dated Mar. 25, 2021, 18 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Jan. 10, 2023, 4 pages. First OfficeAction for Chinese PatentApplication No. 201780063121. 2, dated Nov. 23, 2022, 12 pages.
Control of Selectivity between SiGe and Si in Isotropic Etching Processes. Preliminary Examination Report for Taiwanese Patent Application No. 108140788, dated Dec. 9, 2022, 13 pages. Non-Final Office Action for U.S. Appl. No. 16/426,527, dated Feb. 9, 2023, 9 pages. Non-Final Office Action for U.S. Appl. No. 17/330,787, dated Oct. 17, 2022, 10 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,586, dated Sep. 13, 2022, 11 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Oct. 5, 2022, 4 pages. Non-Final Office Action for U.S. Appl. No. 16/844,406, dated Oct. 6, 2022, 17 pages. Corrected Notice of Allowability U.S. Appl. No. 17/109,935, dated Sep. 14, 2022, 4 pages. Notice of Preliminary Rejection for Korean Patent Application No. 10-2018-7006660, dated Sep. 3, 2022, 6 pages. Advisory Action for U.S. Appl. No. 17/102,957, dated Oct. 27, 2022, 7 pages. Borel, S. et al., “Control of Selectivity between SiGe and Si in Isotropic Etching Processes,” Japanese Journal of Applied Physics, vol. 43, No. 6B, 2004, pp. 3964-3966. Non-Final Office Action for U.S. Appl. No. 16/427,019, dated Dec. 2, 2021, 17 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Nov. 24, 2021, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Jan. 27, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Nov. 24, 2021, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Jan. 27, 2022, 3 pages. Final Office Action for U.S. Appl. No. 16/678,586, dated Nov. 22, 2021, 15 pages. Advisory Action for U.S. Appl. No. 16/678,586, dated Jan. 26, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Nov. 24, 2021, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Dec. 30, 2021, 4 pages. Decision of Rejection for Chinese Patent Application No. 201680058198.6, dated Nov. 12, 2021, 6 pages. Examination Report for European PatentApplication No. 17755402. 9, dated Dec. 20, 2021, 12 pages. Examination Report for European PatentApplication No. 17755403. 7, dated Dec. 20, 2021, 13 pages. Notice ofAllowance for Japanese PatentApplication No. 2019507767, dated Jan. 19, 2021, 6 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/043968, dated Nov. 19, 2021, 15 pages. Notice of Allowance for U.S. Appl. No. 16/390,496, mailed Aug. 24, 2023, 24 pages. Notice of Allowance for U.S. Appl. No. 17/970,078, mailed Aug. 25, 2023, 10 pages. Advisory Action for U.S. Appl. No. 16/678,551, mailed Jul. 28, 2023, 3 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 16/678,551, mailed Aug. 22, 2023, 7 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 16/844,406, mailed Sep. 13, 2023, 2 pages. Final Office Action for U.S. Appl. No. 16/844,406, mailed Sep. 28, 2023, 7 pages. Final Office Action for U.S. Appl. No. 17/121,194, mailed Sep. 7, 2023, 24 pages. Notice of Allowance for U.S. Appl. No. 17/389,977, mailed Aug. 16, 2023, 8 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/389,977, mailed Sep. 20, 2023, 5 pages. Office Action for Taiwanese Patent Application No. 108119536, mailed Jul. 13, 2023, 6 pages. First OfficeAction for Chinese PatentApplication No. 201980077328. 4, mailed Aug. 28, 2023, 15 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026777, mailed Jul. 28, 2023, 12 pages. Quayle Action for U.S. Appl. No. 16/678,551, mailed Oct. 4, 2023, 6 pages. Non-Final Office Action for U.S. Appl. No. 16/678,602, mailed Oct. 6, 2023, 18 pages. Notice of Allowance for U.S. Appl. No. 17/121,194, mailed Oct. 23, 2023, 8 pages. Final Office Action for U.S. Appl. No. 17/102,957, mailed Oct. 26, 2023, 27 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/389,977, mailed Oct. 25, 2023, 5 pages. Board Opinion for Chinese Patent Application No. 201780058052. 6, mailed Oct. 8, 2023, 15 pages. First OfficeAction for Chinese PatentApplication No. 201980050433. 9, mailed Sep. 4, 2023, 20 pages. First OfficeAction for Chinese PatentApplication No. 201980090320. 1, mailed Sep. 5, 2023, 11 pages. Office Action for Taiwanese Patent Application No. 109102892, mailed Sep. 13, 2023, 18 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102893, mailed Sep. 7, 2023, 10 pages. Notice of Allowance for for U.S. Appl. No. 16/844,406, mailed, Nov. 16, 2023, 11 pages. Notice of Allowance for U.S. Appl. No. 16/678,551, mailed Dec. 7, 2023, 9 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/389,977, mailed Nov. 24, 2023, 5 pages. Office Action for Taiwanese Patent Application No. 108119536, mailed Nov. 24, 2023, 22 pages. Preliminary Examination Report for Taiwanese Patent Application No. 108143149, mailed Oct. 18, 2023, 30 pages. SecondOfficeActionforChinesePatentApplicationNo.201980079375. 2, mailed Nov. 21, 2023, 17 pages. Office Action for Taiwanese Patent Application No. 109102895, dated Nov. 30, 2023, 16 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, mailed Jan. 22, 2024, 10 pages. Non-Final Office Action for U.S. Appl. No. 18/306,599, mailed Jan. 22, 2024, 11 pages. Notice of Allowance for U.S. Appl. No. 17/389,977, mailed Jan. 18, 2024, 17 pages. Board Opinion for Chinese Patent Application No. 201780058052. 6, mailed Jan. 15, 2024, 28 pages. Reasons for Rejection forTaiwanese PatentApplication No. 109102896, mailed Dec. 13, 2023, 17 pages. Notice of Allowance for U.S. Appl. No. 18/306,599, mailed Apr. 10, 2024, 8 pages. Notice of Allowance and Applicant-Initiated Interview Summary for U.S. Appl. No. 16/678,602, mailed Mar. 7, 2024, 14 pages. Notice ofAllowance forTaiwanese PatentApplication No. 108119536, mailed Apr. 30, 2024, 4 pages. SecondOfficeActionforChinesePatentApplicationNo.201980077328. 4, mailed Mar. 29, 2024, 14 pages. Office Action for Taiwanese Patent Application No. 113110397, mailed May 7, 2024, 10 pages. Notice of Prelimiary Rejection for Korean Patent Application No. 1020217026747, mailed May 1, 2024, 5 pages. Notice ofAllowance for U.S.Appl. No. 18/151,235, mailed May 29, 2024, 22 pages. Notice of Allowance for U.S. Appl. No. 17/102,957, mailed Jun. 25, 2024, 11 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026777, mailed Apr. 23, 2024, 15 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026784, mailed May 28, 2024, 13 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026776, mailed May 20, 2024, 4 pages.
Notice of Preliminary Rejection for Korean Patent Application No. 1020217026748, mailed May 22, 2024, 15 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026781, mailed May 29, 2024, 13 pages.

Cited non-patent literature · 31

US 10,896,908 B2, 01/2021, Costa et al. (withdrawn)
RF SOI CMOS Technology on Commercial Trap-Rich High Resistivity SOI Wafer. Ali, K. Ben et al., “RF SOI CMOS Technology on Commercial Trap-Rich High Resistivity SOI Wafer,” 2012 IEEE International SOI Conference (SOI), Oct. 1-4, 2012, Napa, California, IEEE, 2 pages. Anderson, D.R., “Thermal Conductivity of Polymers,” Sandia Cor- poration, Mar. 8, 1966, pp. 677-690. Author Unknown, “96% Alumina, thick-ﬁlm, as ﬁred,” MatWeb, Date Unknown, date accessed Apr. 6, 2016, 2 pages, http://www. matweb.com/search/DataSheet.aspx?MatGUID= 3996a734395a4870a9739076918c4297&ckck=1. Author Unknown, “CoolPoly D5108 Thermally Conductive Polyphenylene Sulﬁde (PPS),” Cool Polymers, Inc., Aug. 8, 2007, 2 pages. Author Unknown, “CoolPoly D5506 Thermally Conductive Liquid Crystalline Polymer (LCP),” Cool Polymers, Inc., Dec. 12, 2013, 2 pages. Author Unknown, “CoolPoly D-Series—Thermally Conductive Dielec- tric Plastics,” Cool Polymers, Retrieved Jun. 24, 2013, http://coolpolymers.com/dseries.asp, 1 page. Author Unknown, “CoolPoly E2 Thermally Conductive Liquid Crystalline Polymer (LCP),” Cool Polymers, Inc., Aug. 8, 2007, http://www.coolpolymers.com/Files/DS/Datasheet_e2.pdf, 1 page.
CoolPoly E3605Thermally Conductive Polyamide 4,6 (PA 4,6). Author Unknown, “CoolPoly E3605Thermally Conductive Polyamide 4,6 (PA 4,6),” Cool Polymers, Inc., Aug. 4, 2007, 1 page, http://www.coolpolymers.com/Files/DS/Datasheet_e3605.pdf. Author Unknown, “CoolPoly E5101 Thermally Conductive Polyphenylene Sulﬁde (PPS),” Cool Polymers, Inc., Aug. 27, 2007, 1 page, http://www.coolpolymers.com/Files/DS/Datasheet_e5101. pdf. Author Unknown, “CoolPoly E5107 Thermally Conductive Polyphenylene Sulﬁde (PPS),” Cool Polymers, Inc., Aug. 8, 2007, 1 page, http://coolpolymers.com/Files/DS/Datasheet_e5107.pdf. Author Unknown, “CoolPoly Selection Tool,” Cool Polymers, Inc., 2006, 1 page, http://www.coolpolymers.com/select.asp?Application= Substrates+%26+Electcronic_Packaging. Author Unknown, “CoolPoly Thermally Conductive Plastics for Dielectric Heat Plates,” Cool Polymers, Inc., 2006, 2 pages, http://www.coolpolymers.com/heatplate.asp. Author Unknown, “CoolPoly Thermally Conductive Plastics for Substrates and Electronic Packaging,” Cool Polymers, Inc., 2005, 1 page. Author Unknown, “Electrical Properties of Plastic Materials,” Pro- fessional Plastics, Oct. 28, 2011, http://www.professionalplastics. com/professionalplastics/ElectricalPropertiesofPlastics.pdf, accessed Dec. 18, 2014, 4 pages. Author Unknown, “Fully Sintered Ferrite Powders,” Powder Pro- cessing and Technology, LLC, Date Unknown, 1 page. Author Unknown, “Heat Transfer,” Cool Polymers, Inc., 2006, http://www.coolpolymers.com/heattrans.html, 2 pages. Author Unknown, “Hysol UF3808,” Henkel Corporation, Technical Data Sheet, May 2013, 2 pages. Author Unknown, “PolyOne Therma-Tech™LC-5000C TC LCP,”
Sapphire substrate. MatWeb, Date Unknown, date accessed Apr. 6, 2016, 2 pages, http://www.matweb.com/search/datasheettext.aspx?matguid= 89754e8bb26148d083c5ebb05a0cbff1. Author Unknown, “Sapphire substrate,” from CRC Handbook of Chemistry and Physics, Date Unknown, 1 page. Author Unknown, “Thermal Properties of Plastic Materials,” Pro- fessional Plastics, Aug. 21, 2010, http://www.professionalplastics. com/professionalplastics/ThermalPropertiesofPlasticMaterials.pdf, accessed Dec. 18, 2014, 4 pages. Author Unknown, “Thermal Properties of Solids,” PowerPoint Presentation, No Date, 28 slides, http://www.phys.huji.ac.il/Phys_ Hug/Lectures/77602/PHONONS_2_thermal.pdf. Author Unknown, “Thermal Resistance & Thermal Conductance,” C-Therm Technologies Ltd., accessed Sep. 19, 2013, 4 pages, http://www.ctherm.com/products/tci_thermal_conductivity/helpful_ links_tools/thermal_resistance_thermal_conductance/. Author Unknown, “The Technology: Akhan’s Approach and Solu- tion: The Miraj Diamond™Platform,” 2015, accessed Oct. 9, 2016, http://www.akhansemi.com/technology.html#the-miraj-diamond- platform, 5 pages. Beck, D., et al., “CMOS on FZ-High Resistivity substrate for Monolithic Integration of SiGe-RF-Circuitry and Readout Electron- ics,” IEEE Transactions on Electron Devices, vol. 44, No. 7, Jul. 1997, pp. 1091-1101. Botula, A., et al., “A Thin-Film SOI 180nm CMOS RF Switch Technology,” IEEE Topical Meeting on Silicon Monolithic Inte- grated Circuits in RF Systems, (SiRF ’09), Jan. 2009, pp. 1-4. Carroll, M., et al., “High-Resistivity SOI CMOS Cellular Antenna Switches,” Annual IEEE Compound Semiconductor Integrated Cir- cuit Symposium, (CISC 2009), Oct. 2009, pp. 1-4. Colinge, J.P., et al., “A Low-Voltage, Low-Power Microwave SOI MOSFET,” Proceedings of 1996 IEEE International SOI Confer- ence, Oct. 1996, pp. 128-129. Costa, J. et al., “Integrated MEMS Switch Technology on SOI- CMOS,” Proceedings of Hilton Head Workshop: A Solid-State
Silicon RFCMOS SOI Technology with Above-IC MEMS Integration for Front End Wireless Applications. Sensors, Actuators and Microsystems Workshop, Jun. 1-5, 2008, Hilton Head Island, SC, IEEE, pp. 900-903. Costa, J. et al., “Silicon RFCMOS SOI Technology with Above-IC MEMS Integration for Front End Wireless Applications,” Bipolar/BiCMOS Circuits and Technology Meeting, 2008, BCTM 2008, IEEE, pp. 204-207. Costa, J., “RFCMOS SOI Technology for 4G Reconﬁgurable RF Solutions,” Session WEC1-2, Proceedings of the 2013 IEEE Inter- national Microwave Symposium, 4 pages.
RF Non-Linearities from Si-Based Substrates. Esfeh, Babak Kazemi et al., “RF Non-Linearities from Si-Based Substrates,” 2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Apr. 2-4, 2014, IEEE, 3 pages. Finne, R. M. et al., “A Water-Amine-Complexing Agent System for Etching Silicon,” Journal of the Electrochemical Society, vol. 114, No. 9, Sep. 1967, pp. 965-970. Gamble, H. S. et al., “Low-Loss CPW Lines on surface Stabilized High-Resistivity Silicon,” IEEE Microwave and Guided Wave Letters, vol. 9, No. 10, Oct. 1999, pp. 395-397.
A Review of Dielectric Polymer Composites with High Thermal Conductivity. Huang, Xingyi, et al., “A Review of Dielectric Polymer Composites with High Thermal Conductivity,” IEEE Electrical Insulation Maga- zine, vol. 27, No. 4, Jul./Aug. 2011, pp. 8-16. Joshi, V. et al., “MEMS Solutions in RF Applications,” 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Uniﬁed Con- ference (S3S), Oct. 2013, IEEE, 2 pages.
Study of FCMBGA with Low CTE Core substrate. Jung, Boo Yang, et al., “Study of FCMBGA with Low CTE Core substrate,” 2009 Electronic Components and Technology Confer- ence, May 2009, pp. 301-304. Kerr, D.C., et al., “Identiﬁcation of RF Harmonic Distortion on Si Substrates and Its Reduction Using a Trap-Rich Layer,” IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, (SiRF 2008), Jan. 2008, pp. 151-154. Lederer, D., et al., “New substrate Passivation Method Dedicated to HR SOI Wafer Fabrication with Increased substrate Resistivity,” IEEE Electron Device Letters, vol. 26, No. 11, Nov. 2005, pp. 805-807.
Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers. Lederer, Dimitri et al., “Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers,” Solid-State Electronics, vol. 47, No. 11, Nov. 2003, pp. 1927-1936.
Integration of III-V materials and Si- CMOS through double layer transfer process. Lee, Kwang Hong et al., “Integration of III-V materials and Si- CMOS through double layer transfer process,” Japanese Journal of Applied Physics, vol. 54, Jan. 2015, pp. 030209-1 to 030209-5.
Modeling of SOI FET for RF Switch Applications. Lee, Tzung-Yin, et al., “Modeling of SOI FET for RF Switch Applications,” IEEE Radio Frequency Integrated Circuits Sympo- sium, May 23-25, 2010, Anaheim, CA, IEEE, pp. 479-482. Lu, J.Q., et al., “Evaluation Procedures for Wafer Bonding and Thinning of Interconnect Test Structures for 3D ICs,” Proceedings of the IEEE 2003 International Interconnect Technology Confer- ence, Jun. 2-4, 2003, pp. 74-76. Mamunya, Ye.P., et al., “Electrical and Thermal Conductivity of Polymers Filled with Metal Powders,” European Polymer Journal, vol. 38, 2002, pp. 1887-1897.
RF MEMS-CMOS Device Integration. Mansour, Raafat R., “RF MEMS-CMOS Device Integration,” IEEE Microwave Magazine, vol. 14, No. 1, Jan. 2013, pp. 39-56. Mazure´, C. et al., “Advanced SOI Substrate Manufacturing,” 2004 IEEE International Conference on Integrated Circuit Design and Technology, 2004, IEEE, pp. 105-111. Micak, R. et al., “Photo-Assisted Electrochemical Machining of Micromechanical Structures,” Proceedings of Micro Electro Mechani- cal Systems, Feb. 7-10, 1993, Fort Lauderdale, FL, IEEE, pp. 225-229.
Monolithic Integration of RF-MEMS within CMOS. Morris, Art, “Monolithic Integration of RF-MEMS within CMOS,” 2015 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 27-29, 2015, IEEE, 2 pages. Niklaus, F., et al., “Adhesive Wafer Bonding,” Journal of Applied Physics, vol. 99, No. 3, 031101 (2006), 28 pages. Parthasarathy, S., et al., “RF SOI Switch FET Design and Modeling Tradeoffs for GSM Applications,” 2010 23rd International Confer- ence on VLSI Design, (VLSID ’10), Jan. 2010, pp. 194-199. Raskin, J.P., et al., “Coupling Effects in High-Resistivity SIMOX Substrates for VHF and Microwave Applications,” Proceedings of 1995 IEEE International SOI Conference, Oct. 1995, pp. 62-63. Non-Final Office Action for U.S. Appl. No. 16/426,527, dated Feb. 16, 2022, 9 pages.
Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Mar. 9, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Mar. 31, 2022, 3 pages. Non-Final Office Action for U.S. Appl. No. 16/678,586, dated Mar. 3, 2022, 14 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Feb. 2, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Mar. 9, 2022, 4 pages. Non-Final Office Action for U.S. Appl. No. 16/844,406, dated Mar. 14, 2022, 16 pages. Non-Final Office Action for U.S. Appl. No. 17/102,957, dated Feb. 17, 2022, 9 pages. Summons to Attend for European Patent Application No. 16751791. 1, mailed Feb. 28, 2022, 10 pages. Decision to Grant for Japanese Patent Application No. 2019507765, dated Feb. 10, 2022, 6 pages. Decision to Grant for Japanese Patent Application No. 2019507768, dated Feb. 10, 2022, 6 pages. Office Letter for Taiwanese Patent Application No. 108140788, dated Jan. 5, 2022, 16 pages. Advisory Action for U.S. Appl. No. 16/427,019, dated Aug. 2, 2021, 3 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/034699, dated Aug. 5, 2021, 9 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014662, dated Aug. 5, 2021, 11 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014665, dated Aug. 5, 2021, 10 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014666, dated Aug. 5, 2021, 11 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014667, dated Aug. 5, 2021, 8 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014669, dated Aug. 5, 2021, 9 pages. Notice of Allowance for U.S. Appl. No. 15/287,273, dated Jun. 30, 2017, 8 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/287,273, dated Jul. 21, 2017, 5 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Sep. 7, 2017, 5 pages. Extended European Search Report for European Patent Application No. 15184861.1, dated Jan. 25, 2016, 6 pages. Office Action of the Intellectual Property Office for Taiwanese Patent Application No. 104130224, dated Jun. 15, 2016, 9 pages. Non-Final Office Action for U.S. Appl. No. 14/885,202, dated Apr. 14, 2016, 5 pages. Final Office Action for U.S. Appl. No. 14/885,202, dated Sep. 27, 2016, 7 pages. Advisory Action for U.S. Appl. No. 14/885,202, dated Nov. 29, 2016, 3 pages. Notice of Allowance for U.S. Appl. No. 14/885,202, dated Jan. 27, 2017, 7 pages. Notice of Allowance for U.S. Appl. No. 14/885,202, dated Jul. 24, 2017, 8 pages. Notice of Allowance for U.S. Appl. No. 14/885,243, dated Aug. 31, 2016, 8 pages. Non-Final Office Action for U.S. Appl. No. 12/906,689, dated May 27, 2011, 13 pages. Non-Final Office Action for U.S. Appl. No. 12/906,689, dated Nov. 4, 2011, 20 pages. Search Report for Japanese Patent Application No. 2011-229152, dated Feb. 22, 2013, 58 pages. Office Action for Japanese Patent Application No. 2011-229152, drafted May 10, 2013, 7 pages. Final Rejection for Japanese Patent Application No. 2011-229152, drafted Oct. 25, 2013, 2 pages. International Search Report and Written Opinion for PCT/US2016/045809, dated Oct. 7, 2016, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/652,867, dated Oct. 10, 2017, 5 pages.
Chapter 9: Lamination. Bernheim et al., “Chapter 9: Lamination,” Tools and Manufacturing Engineers Handbook (book), Apr. 1, 1996, Society of Manufactur- ing Engineers, p. 9-1. Fillion R. et al., “Development of a Plastic Encapsulated Multichip Technology for High Volume, Low Cost Commercial Electronics,” Electronic Components and Technology Conference, vol. 1, May 1994, IEEE, 5 pages.
New Thermoplastic Polymer Sub- strate for Microstrip Antennas at 60 GHz. Henawy, Mahmoud Al et al., “New Thermoplastic Polymer Sub- strate for Microstrip Antennas at 60 GHz,” German Microwave Conference, Mar. 15-17, 2010, Berlin, Germany, IEEE, pp. 5-8. International Search Report and Written Opinion for PCT/US2017/046744, dated Nov. 27, 2017, 17 pages. International Search Report and Written Opinion for PCT/US2017/046758, dated Nov. 16, 2017, 19 pages. International Search Report and Written Opinion for PCT/US2017/046779, dated Nov. 29, 2017, 17 pages. Non-Final Office Action for U.S. Appl. No. 15/616,109, dated Oct. 23, 2017, 16 pages. Corrected Notice of Allowability for U.S. Appl. No. 14/851,652, dated Oct. 20, 2017, 5 pages. Final Office Action for U.S. Appl. No. 15/262,457, dated Dec. 19, 2017, 12 pages. Supplemental Notice of Allowability and Applicant-Initiated Inter- view Summary for U.S. Appl. No. 15/287,273, dated Oct. 18, 2017, 6 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Nov. 2, 2017, 5 pages. Non-Final Office Action for U.S. Appl. No. 15/491,064, dated Jan. 2, 2018, 9 pages. Notice of Allowance for U.S. Appl. No. 14/872,910, dated Nov. 17, 2017, 11 pages. Notice of Allowance for U.S. Appl. No. 15/648,082, dated Nov. 29, 2017, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/652,826, dated Nov. 3, 2017, 5 pages. Notice of Allowance for U.S. Appl. No. 15/229,780, dated Oct. 3, 2017, 7 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Jan. 17, 2018, 5 pages. Notice of Allowance for U.S. Appl. No. 15/498,040, dated Feb. 20, 2018, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/387,855, dated Jan. 16, 2018, 7 pages. Non-Final Office Action for U.S. Appl. No. 15/795,915, dated Feb. 23, 2018, 6 pages. International Preliminary Report on Patentability for PCT/US2016/045809, dated Feb. 22, 2018, 8 pages. Advisory Action and Applicant-Initiated Interview Summary for U.S. Appl. No. 15/262,457, dated Feb. 28, 2018, 5 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Feb. 23, 2018, 5 pages. Non-Final Office Action for U.S. Appl. No. 15/676,415, dated Mar. 27, 2018, 14 page. Non-Final Office Action for U.S. Appl. No. 15/676,621, dated Mar. 26, 2018, 16 pages. Notice of Allowance for U.S. Appl. No. 15/795,915, dated Jun. 15, 2018, 7 pages. Final Office Action for U.S. Appl. No. 15/387,855, dated May 24, 2018, 9 pages. Non-Final Office Action for U.S. Appl. No. 15/262,457, dated Apr. 19, 2018, 10 pages. Notice of Allowance for U.S. Appl. No. 15/491,064, dated Apr. 30, 2018, 9 pages.
Non-Final Office Action for U.S. Appl. No. 15/601,858, dated Jun. 26, 2018, 12 pages. Notice of Allowance for U.S. Appl. No. 15/616,109, dated Jul. 2, 2018, 7 pages. Notice of Allowance for U.S. Appl. No. 15/676,621, dated Jun. 5, 2018, 8 pages.
Substrate Crosstalk Reduction Using SOI Technology. Raskin, Jean-Pierre et al., “Substrate Crosstalk Reduction Using SOI Technology,” IEEE Transactions on Electron Devices, vol. 44, No. 12, Dec. 1997, pp. 2252-2261. Rong, B., et al., “Surface-Passivated High-Resistivity Silicon Sub- strates for RFICs,” IEEE Electron Device Letters, vol. 25, No. 4, Apr. 2004, pp. 176-178.
Plastics that Conduct Heat. Sherman, Lilli M., “Plastics that Conduct Heat,” Plastics Technol- ogy Online, Jun. 2001, Retrieved May 17, 2016, http://www.ptonline. com/articles/plastics-that-conduct-heat, Gardner Business Media, Inc., 5 pages. Tombak, A., et al., “High-Efficiency Cellular Power Ampliﬁers Based on a Modiﬁed LDMOS Process on Bulk Silicon and Silicon- On-Insulator Substrates with Integrated Power Management Cir- cuitry,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, No. 6, Jun. 2012, pp. 1862-1869. Yamanaka, A., et al., “Thermal Conductivity of High-Strength Polyetheylene Fiber and Applications for Cryogenic Use,” Interna- tional Scholarly Research Network, ISRN Materials Science, vol. 2011, Article ID 718761, May 25, 2011, 10 pages. Non-Final Office Action for U.S. Appl. No. 13/852,648, dated Jul. 18, 2013, 20 pages. Final Office Action for U.S. Appl. No. 13/852,648, dated Nov. 26, 2013, 21 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 13/852,648, dated Jan. 27, 2014, 4 pages. Advisory Action for U.S. Appl. No. 13/852,648, dated Mar. 7, 2014, 4 pages. Notice of Allowance for U.S. Appl. No. 13/852,648, dated Jun. 16, 2014, 9 pages. Notice of Allowance for U.S. Appl. No. 13/852,648, dated Sep. 26, 2014, 8 pages. Notice of Allowance for U.S. Appl. No. 13/852,648, dated Jan. 22, 2015, 8 pages. Non-Final Office Action for U.S. Appl. No. 13/852,648, dated Jun. 24, 2015, 20 pages. Final Office Action for U.S. Appl. No. 13/852,648, dated Oct. 22, 2015, 20 pages. Non-Final Office Action for U.S. Appl. No. 13/852,648, dated Feb. 19, 2016, 12 pages. Final Office Action for U.S. Appl. No. 13/852,648, dated Jul. 20, 2016, 14 pages. Non-Final Office Action for U.S. Appl. No. 14/315,765, dated Jan. 2, 2015, 6 pages. Final Office Action for U.S. Appl. No. 14/315,765, dated May 11, 2015, 17 pages. Advisory Action for U.S. Appl. No. 14/315,765, dated Jul. 22, 2015, 3 pages. Non-Final Office Action for U.S. Appl. No. 14/260,909, dated Mar. 20, 2015, 20 pages. Final Office Action for U.S. Appl. No. 14/260,909, dated Aug. 12, 2015, 18 pages. Non-Final Office Action for U.S. Appl. No. 14/261,029, dated Dec. 5, 2014, 15 pages. Notice of Allowance for U.S. Appl. No. 14/261,029, dated Apr. 27, 2015, 10 pages. Corrected Notice of Allowability for U.S. Appl. No. 14/261,029, dated Nov. 17, 2015, 5 pages. Non-Final Office Action for U.S. Appl. No. 14/529,870, dated Feb. 12, 2016, 14 pages. Notice of Allowance for U.S. Appl. No. 14/529,870, dated Jul. 15, 2016, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/293,947, dated Apr. 7, 2017, 12 pages. Notice of Allowance for U.S. Appl. No. 15/293,947, dated Aug. 14, 2017, 7 pages. Non-Final Office Action for U.S. Appl. No. 14/715,830, dated Apr. 13, 2016, 16 pages. Final Office Action for U.S. Appl. No. 14/715,830, dated Sep. 6, 2016, 13 pages. Advisory Action for U.S. Appl. No. 14/715,830, dated Oct. 31, 2016, 6 pages. Notice of Allowance for U.S. Appl. No. 14/715,830, dated Feb. 10, 2017, 8 pages. Notice of Allowance for U.S. Appl. No. 14/715,830, dated Mar. 2, 2017, 8 pages. Non-Final Office Action for U.S. Appl. No. 14/851,652, dated Oct. 7, 2016, 10 pages. Notice of Allowance for U.S. Appl. No. 14/851,652, dated Apr. 11, 2017, 9 pages. Corrected Notice of Allowance for U.S. Appl. No. 14/851,652, dated Jul. 24, 2017, 6 pages. Corrected Notice of Allowance for U.S. Appl. No. 14/851,652, dated Sep. 6, 2017, 5 pages. Notice of Allowance for U.S. Appl. No. 14/959,129, dated Oct. 11, 2016, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/173,037, dated Jan. 10, 2017, 8 pages. Final Office Action for U.S. Appl. No. 15/173,037, dated May 2, 2017, 13 pages. Advisory Action for U.S. Appl. No. 15/173,037, dated Jul. 20, 2017, 3 pages. Notice of Allowance for U.S. Appl. No. 15/173,037, dated Aug. 9, 2017, 7 pages. Non-Final Office Action for U.S. Appl. No. 15/085,185, dated Feb. 15, 2017, 10 pages. Non-Final Office Action for U.S. Appl. No. 15/085,185, dated Jun. 6, 2017, 5 pages. Non-Final Office Action for U.S. Appl. No. 15/229,780, dated Jun. 30, 2017, 12 pages. Non-Final Office Action for U.S. Appl. No. 15/262,457, dated Aug. 7, 2017, 10 pages. Notice of Allowance for U.S. Appl. No. 15/408,560, dated Sep. 25, 2017, 8 pages. Notice of Allowance for U.S. Appl. No. 15/287,202, dated Aug. 25, 2017, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/353,346, dated May 23, 2017, 15 pages. Notice of Allowance for U.S. Appl. No. 15/353,346, dated Sep. 25, 2017, 9 pages. Notice of Allowance for U.S. Appl. No. 16/427,019, dated Mar. 10, 2023, 10 pages. Non-Final Office Action for U.S. Appl. No. 16/678,551, dated Mar. 28, 2023, 14 pages. Notice of Allowance for U.S. Appl. No. 17/573,112, dated Mar. 8, 2023, 8 pages. Notice of Allowance for U.S. Appl. No. 17/554,477, dated Mar. 7, 2023, 8 pages. Final Office Action for U.S. Appl. No. 16/844,406, dated Mar. 6, 2023, 13 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Mar. 1, 2023, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Apr. 12, 2023, 4 pages. Non-Final Office Action for U.S. Appl. No. 17/121,194, dated May 9, 2023, 22 pages. Non-Final Office Action for U.S. Appl. No. 17/102,957, dated Apr. 13, 2023, 24 pages. Non-Final Office Action for U.S. Appl. No. 17/389,977, dated Mar. 28, 2023, 10 pages. Written Decision on Registration for Korean Patent Application No. 10-2018-7006660, dated Feb. 24, 2023, 8 pages. Decision to Grant for Japanese Patent Application No. 2022032477, dated Mar. 14, 2023, 5 pages. Decision of Rejection for Chinese Patent Application No. 201780058052.6, dated Mar. 30, 2023, 16 pages.
Office Action for Taiwanese Patent Application No. 109102892, dated Apr. 14, 2023, 18 pages. Advisory Action for U.S. Appl. No. 16/844,406, dated May 12, 2023, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Apr. 11, 2022, 3 pages. Final Office Action for U.S. Appl. No. 16/844,406, dated Jun. 24, 2022, 17 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, dated Aug. 17, 2022, 7 pages. Non-Final Office Action for U.S. Appl. No. 16/427,019, dated Aug. 15, 2022, 17 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Jul. 14, 2022, 3 pages. Final Office Action for U.S. Appl. No. 16/678,586, dated Sep. 1, 2022, 7 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Jul. 14, 2022, 4 pages. Advisory Action for U.S. Appl. No. 16/844,406, dated Jul. 26, 2022, 3 pages. Corrected Notice of Allowability U.S. Appl. No. 17/109,935, dated Jul. 1, 2022, 4 pages. Corrected Notice of Allowability U.S. Appl. No. 17/109,935, dated Jul. 27, 2022, 4 pages. Final Office Action for U.S. Appl. No. 17/102,957, dated Aug. 18, 2022, 12 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/063094, dated Aug. 9, 2022, 24 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Sep. 2, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Sep. 2, 2022, 4 pages. Notice of Allowance for U.S. Appl. No. 16/390,496, dated Oct. 27, 2022, 21 pages. Notice of Allowance for U.S. Appl. No. 16/204,214, dated Oct. 28, 2022, 11 pages. Final Office Action for U.S. Appl. No. 16/427,019, dated Dec. 12, 2022, 19 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Oct. 4, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Nov. 2, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Dec. 7, 2022, 3 pages. Non-Final Office Action for U.S. Appl. No. 17/573,112, dated Dec. 9, 2022, 6 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Nov. 14, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Dec. 9, 2022, 4 pages. Non-Final Office Action for U.S. Appl. No. 17/554,477, dated Nov. 25, 2022, 6 pages. Notice of Allowance for U.S. Appl. No. 17/109,935, dated Oct. 28, 2022, 7 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Nov. 10, 2022, 4 pages. First OfficeAction for Chinese PatentApplication No. 201780062516. 0, dated Nov. 2, 2022, 10 pages. Notice of Reasons for Rejection for Japanese PatentApplication No. 2022032477, dated Oct. 3, 2022, 4 pages. First OfficeAction for Chinese PatentApplication No. 201780058052. 6, dated Nov. 2, 2022, 22 pages. Notice of Allowance for U.S. Appl. No. 17/330,787, dated Dec. 15, 2022, 7 pages. Non-Final Office Action for U.S. Appl. No. 15/676,693, dated May 3, 2018, 14 pages. Notice of Allowance for U.S. Appl. No. 15/789,107, dated May 18, 2018, 8 pages. Final Office Action for U.S. Appl. No. 15/616,109, dated Apr. 19, 2018, 18 pages. Notice of Allowance for U.S. Appl. No. 15/676,693, dated Jul. 20, 2018, 8 pages. Notice of Allowance for U.S. Appl. No. 15/695,629, dated Jul. 11, 2018, 12 pages. Notice of Allowance for U.S. Appl. No. 15/387,855, dated Aug. 10, 2018, 7 pages. Notice of Allowance for U.S. Appl. No. 15/914,538, dated Aug. 1, 2018, 9 pages. Notice of Allowance and Applicant-Initiated Interview Summary for U.S. Appl. No. 15/262,457, dated Sep. 28, 2018, 16 pages. Corrected Notice of Allowance for U.S. Appl. No. 15/676,693, dated Aug. 29, 2018, 5 pages. Final Office Action for U.S. Appl. No. 15/601,858, dated Nov. 26, 2018, 16 pages. Non-Final Office Action for U.S. Appl. No. 15/945,418, dated Nov. 1, 2018, 13 pages. First OfficeAction for Chinese PatentApplication No. 201510746323. X, dated Nov. 2, 2018, 12 pages. Advisory Action for U.S. Appl. No. 15/601,858, dated Jan. 22, 2019, 3 pages. Notice of Allowance for U.S. Appl. No. 16/038,879, dated Jan. 9, 2019, 8 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated Jan. 11, 2019, 8 pages. International Preliminary Report on Patentability for PCT/US2017/046744, dated Feb. 21, 2019, 11 pages. International Preliminary Report on Patentability for PCT/US2017/046758, dated Feb. 21, 2019, 11 pages. International Preliminary Report on Patentability for PCT/US2017/046779, dated Feb. 21, 2019, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/992,613, dated Feb. 27, 2019, 15 pages. Non-Final Office Action for U.S. Appl. No. 15/695,579, dated Jan. 28, 2019, 8 pages. Notice of Allowance for U.S. Appl. No. 15/992,639, dated May 9, 2019, 7 pages. Notice of Allowance for U.S. Appl. No. 15/695,579, dated Mar. 20, 2019, 8 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated May 13, 2019, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/601,858, dated Apr. 17, 2019, 9 pages.
Smart GaN platform; Performance & Challenges. Tsai, Chun-Lin, et al., “Smart GaN platform; Performance & Challenges,” IEEE International Electron Devices Meeting, 2017, 4 pages.
Performance Enhancement of Flip-Chip Packaged AlGAaN/GaN HEMTs by Strain Engineering Design. Tsai, Szu-Ping., et al., “Performance Enhancement of Flip-Chip Packaged AlGAaN/GaN HEMTs by Strain Engineering Design,” IEEE Transcations on Electron Devices, vol. 63, Issue 10, Oct. 2016, pp. 3876-3881. Final Office Action for U.S. Appl. No. 15/992,613, dated May 24, 2019, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/873,152, dated May 24, 2019, 11 pages. Notice of Allowance for U.S. Appl. No. 16/168,327, dated Jun. 28, 2019, 7 pages.
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application. Lin, Yueh, Chin, et al., “Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application,” IEEE Elec- tronic Device Letters, vol. 38, Issue 8, 2017, 4 pages.
GaN-on-Si Switched Mode RF Power Ampliﬁers for Non-Constant Envelope Signals. Shukla, Shishir, et al., “GaN-on-Si Switched Mode RF Power Ampliﬁers for Non-Constant Envelope Signals,” IEEE Topical Conference on RF/Microwave Power Ampliﬁers for Radio and Wireless Applications, 2017, pp. 88-91. International Search Report and Written Opinion for International Patent Application No. PCT/US19/25591, dated Jun. 21, 2019, 7 pages. Notice of Reasons for Refusal for Japanese Patent Application No. 2015-180657, dated Jul. 9, 2019, 4 pages. Notice of Allowance for U.S. Appl. No. 15/601,858, dated Aug. 16, 2019, 8 pages. Advisory Action for U.S. Appl. No. 15/992,613, dated Jul. 29, 2019, 3 pages.
Detailed Simulation Study of a Reverse Embedded- SiGE Strained-Silicon MOSFET. Final Office Action for U.S. Appl. No. 15/873,152, dated Aug. 8, 2019, 13 pages. Notice of Allowance for U.S. Appl. No. 15/975,230, dated Jul. 22, 2019, 7 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated Aug. 28, 2019, 8 pages. Fiorenza, et al., “Detailed Simulation Study of a Reverse Embedded- SiGE Strained-Silicon MOSFET,” IEEE Transactions on Electron Devices, vol. 55, Issue 2, Feb. 2008, pp. 640-648. Fiorenza, et al., “Systematic study of thick strained silicon NMOSFETs for digital applications,” International SiGE Technology and Device Meeting, May 2006, IEEE, 2 pages. Huang, et al., “Carrier Mobility Enhancement in Strained Si-On- Insulator Fabricated by Wafer Bonding,” Symposium on VLSI
Effect of Germanium content on mobility enhancement for strained silicon FET. Technology, Digest of Technical Papers, 2001, pp. 57-58. Nan, et al., “Effect of Germanium content on mobility enhancement for strained silicon FET,” Student Conference on Research and Development, Dec. 2017, IEEE, pp. 154-157.
Performance Enhancement of Strained-Si MOSFETs Fabricated on a Chemical-Mechanical-Polished SiGE Substrate. Sugii, Nobuyuki, et al., “Performance Enhancement of Strained-Si MOSFETs Fabricated on a Chemical-Mechanical-Polished SiGE Substrate,” IEEE Transactions on Electron Devices, vol. 49, Issue 12, Dec. 2002, pp. 2237-2243.
Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers. Yin, Haizhou, et al., “Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers,” International Electron Devices Meeting, Dec. 2003, San Francisco, California, IEEE, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/695,579, dated Feb. 5, 2020, 5 pages. Notice of Allowance for U.S. Appl. No. 15/992,613, dated Sep. 23, 2019, 7 pages. Non-Final Office Action for U.S. Appl. No. 16/204,214, dated Oct. 9, 2019, 15 pages. Non-Final Office Action for U.S. Appl. No. 15/816,637, dated Oct. 31, 2019, 10 pages. Advisory Action for U.S. Appl. No. 15/873,152, dated Oct. 11, 2019, 3 pages. Notice of Allowance for U.S. Appl. No. 15/873,152, dated Dec. 10, 2019, 9 pages. Final Office Action for U.S. Appl. No. 16/426,527, dated May 25, 2023, 9 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, dated Jun. 22, 2023, 8 pages. Final Office Action for U.S. Appl. No. 16/678,551, dated May 26, 2023, 16 pages. Non-Final Office Action for U.S. Appl. No. 16/844,406, dated Jun. 23, 2023, 18 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102894, dated Apr. 7, 2023, 20 pages. Non-Final Office Action for U.S. Appl. No. 16/527,702, dated Jan. 10, 2020, 10 pages. Office Action for Japanese Patent Application No. 2018-526613, dated Nov. 5, 2019, 8 pages. Intention to Grant for European Patent Application No. 17757646.9, dated Feb. 27, 2020, 55 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/034645, dated Sep. 19, 2019, 14 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/063460, dated Feb. 25, 2020, 14 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/055317, dated Feb. 6, 2020, 17 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/055321, dated Jan. 27, 2020, 23 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/034699, dated Oct. 29, 2019, 13 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/695,579, dated Apr. 1, 2020, 4 pages. Final Office Action for U.S. Appl. No. 16/204,214, dated Mar. 6, 2020, 14 pages. Notice of Allowance for U.S. Appl. No. 15/816,637, dated Apr. 2, 2020, 8 pages. Notice of Allowance for U.S. Appl. No. 16/527,702, dated Apr. 9, 2020, 8 pages. Decision of Rejection for Japanese Patent Application No. 2015- 180657, dated Mar. 17, 2020, 4 pages. Dhar, S. et al., “Electron Mobility Model for Strained-Si Devices,” IEEE Transactions on Electron Devices, vol. 52, No. 4, Apr. 2005, IEEE, pp. 527-533. Notice of Allowance for U.S. Appl. No. 16/038,879, dated Apr. 15, 2020, 9 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated Apr. 30, 2020, 8 pages. Advisory Action for U.S. Appl. No. 16/204,214, dated Apr. 15, 2020, 3 pages. Examination Report for European PatentApplication No. 16751791. 1, dated Apr. 30, 2020, 15 pages. Notiﬁcation of Reasons for Refusal for Japanese Patent Application No. 2018-526613, dated May 11, 2020, 5 pages. Notice of Allowance for U.S. Appl. No. 15/873,152, dated May 11, 2020, 8 pages. Non-Final Office Action for U.S. Appl. No. 16/454,687, dated May 15, 2020, 14 pages. Welser, J. et al., “Electron Mobility Enhancement in Strained-Si N-Type Metal-Oxide-Semiconductor Field-Effect Transistors,” IEEE Electron Device Letters, vol. 15, No. 3, Mar. 1994, IEEE, pp. 100-102. Zeng, X. et al., “A Combination of Boron Nitride Nanotubes and Cellulose Nanoﬁbers for the Preparation of a Nanocomposite with High Thermal Conductivity,” ACS Nano, vol. 11, No. 5, 2017, American Chemical Society, pp. 5167-5178. Quayle Action for U.S. Appl. No. 16/703,251, mailed Jun. 26, 2020, 5 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/695,579, dated May 20, 2020, 4 pages. Notice of Allowability for U.S. Appl. No. 15/695,579, dated Jun. 25, 2020, 4 pages. Notice of Allowance for U.S. Appl. No. 16/368,210, dated Jun. 17, 2020, 10 pages. Non-Final Office Action for U.S. Appl. No. 16/374,125, dated Jun. 26, 2020, 12 pages. Non-Final Office Action for U.S. Appl. No. 16/390,496, dated Jul. 10, 2020, 17 pages. Non-Final Office Action for U.S. Appl. No. 16/204,214, dated May 19, 2020, 15 pages. Non-Final Office Action for U.S. Appl. No. 16/454,809, dated May 15, 2020, 12 pages. Examination Report for Singapore Patent Application No. 11201901193U, dated May 26, 2020, 6 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014662, dated May 7, 2020, 18 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014665, dated May 13, 2020, 17 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014666, dated Jun. 4, 2020, 18 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014667, dated May 18, 2020, 14 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014669, dated Jun. 4, 2020, 15 pages. Notice of Allowance for U.S. Appl. No. 16/454,687, dated Aug. 14, 2020, 7 pages. Decision to Grant for Japanese Patent Application No. 2018- 526613, dated Aug. 17, 2020, 5 pages.
Hybrid Bonding: From Concept to Commercializa- tion. Final Office Action for U.S. Appl. No. 16/454,809, dated Aug. 21, 2020, 12 pages. Von Trapp, F., “Hybrid Bonding: From Concept to Commercializa- tion,” Apr. 2, 2018, 3D InCities, https://www.3dincites.com/2018/04/hybrid-bonding-from-concept-to-commercialization/, 10 pages. Notice of Allowance for U.S. Appl. No. 16/703,251, dated Aug. 27, 2020, 8 pages. Notice of Allowance for U.S. Appl. No. 16/527,702, dated Nov. 13, 2020, 8 pages. Notice of Allowance for U.S. Appl. No. 16/374,125, dated Dec. 16, 2020, 9 pages. Final Office Action for U.S. Appl. No. 16/390,496, dated Dec. 24, 2020, 21 pages. Non-Final Office Action for U.S. Appl. No. 16/426,527, dated Nov. 20, 2020, 7 pages. Final Office Action for U.S. Appl. No. 16/204,214, dated Nov. 30, 2020, 15 pages. Notice of Allowance for U.S. Appl. No. 16/204,214, dated Feb. 17, 2021, 11 pages. Advisory Action for U.S. Appl. No. 16/454,809, dated Oct. 23, 2020, 3 pages. QuayleAction for U.S.Appl. No. 16/426,527, mailed May 26, 2022, 5 pages. Final Office Action for U.S. Appl. No. 16/427,019, dated Apr. 12, 2022, 15 pages. Advisory Action for U.S. Appl. No. 16/427,019, dated Jun. 2, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated May 13, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Jun. 15, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated May 6, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Jun. 10, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Apr. 8, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated May 13, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Jun. 10, 2022, 4 pages. Notice of Allowance for U.S. Appl. No. 17/109,935, dated Apr. 20, 2022, 15 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/063093, dated May 4, 2022, 15 pages. Invitation to Pay Additional Fees and Partial International Search for International PatentApplication No. PCT/US2021/063094, dated Apr. 19, 2022, 15 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/062509, dated Mar. 29, 2022, 20 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/426,527, dated Aug. 18, 2021, 4 pages. Advisory Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,551, dated Sep. 13, 2021, 3 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,551, dated Oct. 21, 2021, 8 pages. Advisory Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,573, dated Sep. 10, 2021, 3 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,573, dated Oct. 21, 2021, 7 pages. Non-Final Office Action for U.S. Appl. No. 16/678,586, dated Aug. 12, 2021, 16 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,602, dated Aug. 12, 2021, 11 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Aug. 26, 2021, 4 pages. Decision to Grant for Japanese Patent Application No. 2020119130, dated Sep. 7, 2021, 4 pages. SecondOfficeActionforChinesePatentApplicationNo.201680058198. 6, dated Sep. 8, 2021, 8 pages. First OfficeAction for Chinese PatentApplication No. 201980079375. 2, dated May 5, 2023, 17 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102895, dated May 30, 2023, 18 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102896, dated Jul. 4, 2023, 19 pages. Notice of Allowance for U.S. Appl. No. 16/454,809, dated Nov. 25, 2020, 8 pages. Non-Final Office Action for U.S. Appl. No. 16/427,019, dated Nov. 19, 2020, 19 pages. Non-Final Office Action for U.S. Appl. No. 16/678,573, dated Feb. 19, 2021, 11 pages. Non-Final Office Action for U.S. Appl. No. 16/678,602, dated Feb. 19, 2021, 10 pages. First OfficeAction for Chinese PatentApplication No. 201680058198. 6, dated Dec. 29, 2020, 14 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/025591, dated Oct. 15, 2020, 6 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/034645, dated Jan. 14, 2021, 9 pages. Advisory Action for U.S. Appl. No. 16/390,496, dated Mar. 1, 2021, 3 pages. Notice of Allowance for U.S. Appl. No. 16/390,496, dated Apr. 5, 2021, 7 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, dated May 14, 2021, 9 pages. Final Office Action for U.S. Appl. No. 16/427,019, dated May 21, 2021, 16 pages. Non-Final Office Action for U.S. Appl. No. 16/678,551, dated Apr. 7, 2021, 9 pages. Final Office Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,551, dated Jun. 28, 2021, 9 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 16/678,573, dated May 7, 2021, 2 pages. Final Office Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,573, dated Jun. 28, 2021, 10 pages. Notice of Allowance for U.S. Appl. No. 16/678,619, dated Jul. 8, 2021, 10 pages. Final Office Action for U.S. Appl. No. 16/678,602, dated Jun. 1, 2021, 9 pages. Notice of Reasons for Refusal for Japanese Patent Application No. 2020119130, dated Jun. 29, 2021, 4 pages. Notice of Reasons for Rejection for Japanese PatentApplication No. 2019507765, dated Jun. 28, 2021, 4 pages. Search Report for Japanese Patent Application No. 2019507768, dated Jul. 15, 2021, 42 pages. Notice of Reasons for Refusal for Japanese Patent Application No. 2019507768, dated Jul. 26, 2021, 4 pages. Supplementary Examination Report for Singapore Patent Applica- tion No. 11201901194S, dated Mar. 10, 2021, 3 pages. Reasons for Rejection for Japanese PatentApplication No. 2019507767, dated Jun. 25, 2021, 5 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/063460, dated Jun. 10, 2021, 9 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/055317, dated Apr. 22, 2021, 11 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/055321, dated Apr. 22, 2021, 14 pages. Office Action for Taiwanese Patent Application No. 108140788, dated Mar. 25, 2021, 18 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Jan. 10, 2023, 4 pages. First OfficeAction for Chinese PatentApplication No. 201780063121. 2, dated Nov. 23, 2022, 12 pages.
Control of Selectivity between SiGe and Si in Isotropic Etching Processes. Preliminary Examination Report for Taiwanese Patent Application No. 108140788, dated Dec. 9, 2022, 13 pages. Non-Final Office Action for U.S. Appl. No. 16/426,527, dated Feb. 9, 2023, 9 pages. Non-Final Office Action for U.S. Appl. No. 17/330,787, dated Oct. 17, 2022, 10 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,586, dated Sep. 13, 2022, 11 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Oct. 5, 2022, 4 pages. Non-Final Office Action for U.S. Appl. No. 16/844,406, dated Oct. 6, 2022, 17 pages. Corrected Notice of Allowability U.S. Appl. No. 17/109,935, dated Sep. 14, 2022, 4 pages. Notice of Preliminary Rejection for Korean Patent Application No. 10-2018-7006660, dated Sep. 3, 2022, 6 pages. Advisory Action for U.S. Appl. No. 17/102,957, dated Oct. 27, 2022, 7 pages. Borel, S. et al., “Control of Selectivity between SiGe and Si in Isotropic Etching Processes,” Japanese Journal of Applied Physics, vol. 43, No. 6B, 2004, pp. 3964-3966. Non-Final Office Action for U.S. Appl. No. 16/427,019, dated Dec. 2, 2021, 17 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Nov. 24, 2021, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Jan. 27, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Nov. 24, 2021, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Jan. 27, 2022, 3 pages. Final Office Action for U.S. Appl. No. 16/678,586, dated Nov. 22, 2021, 15 pages. Advisory Action for U.S. Appl. No. 16/678,586, dated Jan. 26, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Nov. 24, 2021, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Dec. 30, 2021, 4 pages. Decision of Rejection for Chinese Patent Application No. 201680058198.6, dated Nov. 12, 2021, 6 pages. Examination Report for European PatentApplication No. 17755402. 9, dated Dec. 20, 2021, 12 pages. Examination Report for European PatentApplication No. 17755403. 7, dated Dec. 20, 2021, 13 pages. Notice ofAllowance for Japanese PatentApplication No. 2019507767, dated Jan. 19, 2021, 6 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/043968, dated Nov. 19, 2021, 15 pages. Notice of Allowance for U.S. Appl. No. 16/390,496, mailed Aug. 24, 2023, 24 pages. Notice of Allowance for U.S. Appl. No. 17/970,078, mailed Aug. 25, 2023, 10 pages. Advisory Action for U.S. Appl. No. 16/678,551, mailed Jul. 28, 2023, 3 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 16/678,551, mailed Aug. 22, 2023, 7 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 16/844,406, mailed Sep. 13, 2023, 2 pages. Final Office Action for U.S. Appl. No. 16/844,406, mailed Sep. 28, 2023, 7 pages. Final Office Action for U.S. Appl. No. 17/121,194, mailed Sep. 7, 2023, 24 pages. Notice of Allowance for U.S. Appl. No. 17/389,977, mailed Aug. 16, 2023, 8 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/389,977, mailed Sep. 20, 2023, 5 pages. Office Action for Taiwanese Patent Application No. 108119536, mailed Jul. 13, 2023, 6 pages. First OfficeAction for Chinese PatentApplication No. 201980077328. 4, mailed Aug. 28, 2023, 15 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026777, mailed Jul. 28, 2023, 12 pages. Quayle Action for U.S. Appl. No. 16/678,551, mailed Oct. 4, 2023, 6 pages. Non-Final Office Action for U.S. Appl. No. 16/678,602, mailed Oct. 6, 2023, 18 pages. Notice of Allowance for U.S. Appl. No. 17/121,194, mailed Oct. 23, 2023, 8 pages. Final Office Action for U.S. Appl. No. 17/102,957, mailed Oct. 26, 2023, 27 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/389,977, mailed Oct. 25, 2023, 5 pages. Board Opinion for Chinese Patent Application No. 201780058052. 6, mailed Oct. 8, 2023, 15 pages. First OfficeAction for Chinese PatentApplication No. 201980050433. 9, mailed Sep. 4, 2023, 20 pages. First OfficeAction for Chinese PatentApplication No. 201980090320. 1, mailed Sep. 5, 2023, 11 pages. Office Action for Taiwanese Patent Application No. 109102892, mailed Sep. 13, 2023, 18 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102893, mailed Sep. 7, 2023, 10 pages. Notice of Allowance for for U.S. Appl. No. 16/844,406, mailed, Nov. 16, 2023, 11 pages. Notice of Allowance for U.S. Appl. No. 16/678,551, mailed Dec. 7, 2023, 9 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/389,977, mailed Nov. 24, 2023, 5 pages. Office Action for Taiwanese Patent Application No. 108119536, mailed Nov. 24, 2023, 22 pages. Preliminary Examination Report for Taiwanese Patent Application No. 108143149, mailed Oct. 18, 2023, 30 pages. SecondOfficeActionforChinesePatentApplicationNo.201980079375. 2, mailed Nov. 21, 2023, 17 pages. Office Action for Taiwanese Patent Application No. 109102895, dated Nov. 30, 2023, 16 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, mailed Jan. 22, 2024, 10 pages. Non-Final Office Action for U.S. Appl. No. 18/306,599, mailed Jan. 22, 2024, 11 pages. Notice of Allowance for U.S. Appl. No. 17/389,977, mailed Jan. 18, 2024, 17 pages. Board Opinion for Chinese Patent Application No. 201780058052. 6, mailed Jan. 15, 2024, 28 pages. Reasons for Rejection forTaiwanese PatentApplication No. 109102896, mailed Dec. 13, 2023, 17 pages. Notice of Allowance for U.S. Appl. No. 18/306,599, mailed Apr. 10, 2024, 8 pages. Notice of Allowance and Applicant-Initiated Interview Summary for U.S. Appl. No. 16/678,602, mailed Mar. 7, 2024, 14 pages. Notice ofAllowance forTaiwanese PatentApplication No. 108119536, mailed Apr. 30, 2024, 4 pages. SecondOfficeActionforChinesePatentApplicationNo.201980077328. 4, mailed Mar. 29, 2024, 14 pages. Office Action for Taiwanese Patent Application No. 113110397, mailed May 7, 2024, 10 pages. Notice of Prelimiary Rejection for Korean Patent Application No. 1020217026747, mailed May 1, 2024, 5 pages. Notice ofAllowance for U.S.Appl. No. 18/151,235, mailed May 29, 2024, 22 pages. Notice of Allowance for U.S. Appl. No. 17/102,957, mailed Jun. 25, 2024, 11 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026777, mailed Apr. 23, 2024, 15 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026784, mailed May 28, 2024, 13 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026776, mailed May 20, 2024, 4 pages.
Notice of Preliminary Rejection for Korean Patent Application No. 1020217026748, mailed May 22, 2024, 15 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026781, mailed May 29, 2024, 13 pages.

Cited non-patent literature · 31

US 10,896,908 B2, 01/2021, Costa et al. (withdrawn)
RF SOI CMOS Technology on Commercial Trap-Rich High Resistivity SOI Wafer. Ali, K. Ben et al., “RF SOI CMOS Technology on Commercial Trap-Rich High Resistivity SOI Wafer,” 2012 IEEE International SOI Conference (SOI), Oct. 1-4, 2012, Napa, California, IEEE, 2 pages. Anderson, D.R., “Thermal Conductivity of Polymers,” Sandia Cor- poration, Mar. 8, 1966, pp. 677-690. Author Unknown, “96% Alumina, thick-ﬁlm, as ﬁred,” MatWeb, Date Unknown, date accessed Apr. 6, 2016, 2 pages, http://www. matweb.com/search/DataSheet.aspx?MatGUID= 3996a734395a4870a9739076918c4297&ckck=1. Author Unknown, “CoolPoly D5108 Thermally Conductive Polyphenylene Sulﬁde (PPS),” Cool Polymers, Inc., Aug. 8, 2007, 2 pages. Author Unknown, “CoolPoly D5506 Thermally Conductive Liquid Crystalline Polymer (LCP),” Cool Polymers, Inc., Dec. 12, 2013, 2 pages. Author Unknown, “CoolPoly D-Series—Thermally Conductive Dielec- tric Plastics,” Cool Polymers, Retrieved Jun. 24, 2013, http://coolpolymers.com/dseries.asp, 1 page. Author Unknown, “CoolPoly E2 Thermally Conductive Liquid Crystalline Polymer (LCP),” Cool Polymers, Inc., Aug. 8, 2007, http://www.coolpolymers.com/Files/DS/Datasheet_e2.pdf, 1 page.
CoolPoly E3605Thermally Conductive Polyamide 4,6 (PA 4,6). Author Unknown, “CoolPoly E3605Thermally Conductive Polyamide 4,6 (PA 4,6),” Cool Polymers, Inc., Aug. 4, 2007, 1 page, http://www.coolpolymers.com/Files/DS/Datasheet_e3605.pdf. Author Unknown, “CoolPoly E5101 Thermally Conductive Polyphenylene Sulﬁde (PPS),” Cool Polymers, Inc., Aug. 27, 2007, 1 page, http://www.coolpolymers.com/Files/DS/Datasheet_e5101. pdf. Author Unknown, “CoolPoly E5107 Thermally Conductive Polyphenylene Sulﬁde (PPS),” Cool Polymers, Inc., Aug. 8, 2007, 1 page, http://coolpolymers.com/Files/DS/Datasheet_e5107.pdf. Author Unknown, “CoolPoly Selection Tool,” Cool Polymers, Inc., 2006, 1 page, http://www.coolpolymers.com/select.asp?Application= Substrates+%26+Electcronic_Packaging. Author Unknown, “CoolPoly Thermally Conductive Plastics for Dielectric Heat Plates,” Cool Polymers, Inc., 2006, 2 pages, http://www.coolpolymers.com/heatplate.asp. Author Unknown, “CoolPoly Thermally Conductive Plastics for Substrates and Electronic Packaging,” Cool Polymers, Inc., 2005, 1 page. Author Unknown, “Electrical Properties of Plastic Materials,” Pro- fessional Plastics, Oct. 28, 2011, http://www.professionalplastics. com/professionalplastics/ElectricalPropertiesofPlastics.pdf, accessed Dec. 18, 2014, 4 pages. Author Unknown, “Fully Sintered Ferrite Powders,” Powder Pro- cessing and Technology, LLC, Date Unknown, 1 page. Author Unknown, “Heat Transfer,” Cool Polymers, Inc., 2006, http://www.coolpolymers.com/heattrans.html, 2 pages. Author Unknown, “Hysol UF3808,” Henkel Corporation, Technical Data Sheet, May 2013, 2 pages. Author Unknown, “PolyOne Therma-Tech™LC-5000C TC LCP,”
Sapphire substrate. MatWeb, Date Unknown, date accessed Apr. 6, 2016, 2 pages, http://www.matweb.com/search/datasheettext.aspx?matguid= 89754e8bb26148d083c5ebb05a0cbff1. Author Unknown, “Sapphire substrate,” from CRC Handbook of Chemistry and Physics, Date Unknown, 1 page. Author Unknown, “Thermal Properties of Plastic Materials,” Pro- fessional Plastics, Aug. 21, 2010, http://www.professionalplastics. com/professionalplastics/ThermalPropertiesofPlasticMaterials.pdf, accessed Dec. 18, 2014, 4 pages. Author Unknown, “Thermal Properties of Solids,” PowerPoint Presentation, No Date, 28 slides, http://www.phys.huji.ac.il/Phys_ Hug/Lectures/77602/PHONONS_2_thermal.pdf. Author Unknown, “Thermal Resistance & Thermal Conductance,” C-Therm Technologies Ltd., accessed Sep. 19, 2013, 4 pages, http://www.ctherm.com/products/tci_thermal_conductivity/helpful_ links_tools/thermal_resistance_thermal_conductance/. Author Unknown, “The Technology: Akhan’s Approach and Solu- tion: The Miraj Diamond™Platform,” 2015, accessed Oct. 9, 2016, http://www.akhansemi.com/technology.html#the-miraj-diamond- platform, 5 pages. Beck, D., et al., “CMOS on FZ-High Resistivity substrate for Monolithic Integration of SiGe-RF-Circuitry and Readout Electron- ics,” IEEE Transactions on Electron Devices, vol. 44, No. 7, Jul. 1997, pp. 1091-1101. Botula, A., et al., “A Thin-Film SOI 180nm CMOS RF Switch Technology,” IEEE Topical Meeting on Silicon Monolithic Inte- grated Circuits in RF Systems, (SiRF ’09), Jan. 2009, pp. 1-4. Carroll, M., et al., “High-Resistivity SOI CMOS Cellular Antenna Switches,” Annual IEEE Compound Semiconductor Integrated Cir- cuit Symposium, (CISC 2009), Oct. 2009, pp. 1-4. Colinge, J.P., et al., “A Low-Voltage, Low-Power Microwave SOI MOSFET,” Proceedings of 1996 IEEE International SOI Confer- ence, Oct. 1996, pp. 128-129. Costa, J. et al., “Integrated MEMS Switch Technology on SOI- CMOS,” Proceedings of Hilton Head Workshop: A Solid-State
Silicon RFCMOS SOI Technology with Above-IC MEMS Integration for Front End Wireless Applications. Sensors, Actuators and Microsystems Workshop, Jun. 1-5, 2008, Hilton Head Island, SC, IEEE, pp. 900-903. Costa, J. et al., “Silicon RFCMOS SOI Technology with Above-IC MEMS Integration for Front End Wireless Applications,” Bipolar/BiCMOS Circuits and Technology Meeting, 2008, BCTM 2008, IEEE, pp. 204-207. Costa, J., “RFCMOS SOI Technology for 4G Reconﬁgurable RF Solutions,” Session WEC1-2, Proceedings of the 2013 IEEE Inter- national Microwave Symposium, 4 pages.
RF Non-Linearities from Si-Based Substrates. Esfeh, Babak Kazemi et al., “RF Non-Linearities from Si-Based Substrates,” 2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Apr. 2-4, 2014, IEEE, 3 pages. Finne, R. M. et al., “A Water-Amine-Complexing Agent System for Etching Silicon,” Journal of the Electrochemical Society, vol. 114, No. 9, Sep. 1967, pp. 965-970. Gamble, H. S. et al., “Low-Loss CPW Lines on surface Stabilized High-Resistivity Silicon,” IEEE Microwave and Guided Wave Letters, vol. 9, No. 10, Oct. 1999, pp. 395-397.
A Review of Dielectric Polymer Composites with High Thermal Conductivity. Huang, Xingyi, et al., “A Review of Dielectric Polymer Composites with High Thermal Conductivity,” IEEE Electrical Insulation Maga- zine, vol. 27, No. 4, Jul./Aug. 2011, pp. 8-16. Joshi, V. et al., “MEMS Solutions in RF Applications,” 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Uniﬁed Con- ference (S3S), Oct. 2013, IEEE, 2 pages.
Study of FCMBGA with Low CTE Core substrate. Jung, Boo Yang, et al., “Study of FCMBGA with Low CTE Core substrate,” 2009 Electronic Components and Technology Confer- ence, May 2009, pp. 301-304. Kerr, D.C., et al., “Identiﬁcation of RF Harmonic Distortion on Si Substrates and Its Reduction Using a Trap-Rich Layer,” IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, (SiRF 2008), Jan. 2008, pp. 151-154. Lederer, D., et al., “New substrate Passivation Method Dedicated to HR SOI Wafer Fabrication with Increased substrate Resistivity,” IEEE Electron Device Letters, vol. 26, No. 11, Nov. 2005, pp. 805-807.
Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers. Lederer, Dimitri et al., “Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers,” Solid-State Electronics, vol. 47, No. 11, Nov. 2003, pp. 1927-1936.
Integration of III-V materials and Si- CMOS through double layer transfer process. Lee, Kwang Hong et al., “Integration of III-V materials and Si- CMOS through double layer transfer process,” Japanese Journal of Applied Physics, vol. 54, Jan. 2015, pp. 030209-1 to 030209-5.
Modeling of SOI FET for RF Switch Applications. Lee, Tzung-Yin, et al., “Modeling of SOI FET for RF Switch Applications,” IEEE Radio Frequency Integrated Circuits Sympo- sium, May 23-25, 2010, Anaheim, CA, IEEE, pp. 479-482. Lu, J.Q., et al., “Evaluation Procedures for Wafer Bonding and Thinning of Interconnect Test Structures for 3D ICs,” Proceedings of the IEEE 2003 International Interconnect Technology Confer- ence, Jun. 2-4, 2003, pp. 74-76. Mamunya, Ye.P., et al., “Electrical and Thermal Conductivity of Polymers Filled with Metal Powders,” European Polymer Journal, vol. 38, 2002, pp. 1887-1897.
RF MEMS-CMOS Device Integration. Mansour, Raafat R., “RF MEMS-CMOS Device Integration,” IEEE Microwave Magazine, vol. 14, No. 1, Jan. 2013, pp. 39-56. Mazure´, C. et al., “Advanced SOI Substrate Manufacturing,” 2004 IEEE International Conference on Integrated Circuit Design and Technology, 2004, IEEE, pp. 105-111. Micak, R. et al., “Photo-Assisted Electrochemical Machining of Micromechanical Structures,” Proceedings of Micro Electro Mechani- cal Systems, Feb. 7-10, 1993, Fort Lauderdale, FL, IEEE, pp. 225-229.
Monolithic Integration of RF-MEMS within CMOS. Morris, Art, “Monolithic Integration of RF-MEMS within CMOS,” 2015 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr. 27-29, 2015, IEEE, 2 pages. Niklaus, F., et al., “Adhesive Wafer Bonding,” Journal of Applied Physics, vol. 99, No. 3, 031101 (2006), 28 pages. Parthasarathy, S., et al., “RF SOI Switch FET Design and Modeling Tradeoffs for GSM Applications,” 2010 23rd International Confer- ence on VLSI Design, (VLSID ’10), Jan. 2010, pp. 194-199. Raskin, J.P., et al., “Coupling Effects in High-Resistivity SIMOX Substrates for VHF and Microwave Applications,” Proceedings of 1995 IEEE International SOI Conference, Oct. 1995, pp. 62-63. Non-Final Office Action for U.S. Appl. No. 16/426,527, dated Feb. 16, 2022, 9 pages.
Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Mar. 9, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Mar. 31, 2022, 3 pages. Non-Final Office Action for U.S. Appl. No. 16/678,586, dated Mar. 3, 2022, 14 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Feb. 2, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Mar. 9, 2022, 4 pages. Non-Final Office Action for U.S. Appl. No. 16/844,406, dated Mar. 14, 2022, 16 pages. Non-Final Office Action for U.S. Appl. No. 17/102,957, dated Feb. 17, 2022, 9 pages. Summons to Attend for European Patent Application No. 16751791. 1, mailed Feb. 28, 2022, 10 pages. Decision to Grant for Japanese Patent Application No. 2019507765, dated Feb. 10, 2022, 6 pages. Decision to Grant for Japanese Patent Application No. 2019507768, dated Feb. 10, 2022, 6 pages. Office Letter for Taiwanese Patent Application No. 108140788, dated Jan. 5, 2022, 16 pages. Advisory Action for U.S. Appl. No. 16/427,019, dated Aug. 2, 2021, 3 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/034699, dated Aug. 5, 2021, 9 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014662, dated Aug. 5, 2021, 11 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014665, dated Aug. 5, 2021, 10 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014666, dated Aug. 5, 2021, 11 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014667, dated Aug. 5, 2021, 8 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2020/014669, dated Aug. 5, 2021, 9 pages. Notice of Allowance for U.S. Appl. No. 15/287,273, dated Jun. 30, 2017, 8 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/287,273, dated Jul. 21, 2017, 5 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Sep. 7, 2017, 5 pages. Extended European Search Report for European Patent Application No. 15184861.1, dated Jan. 25, 2016, 6 pages. Office Action of the Intellectual Property Office for Taiwanese Patent Application No. 104130224, dated Jun. 15, 2016, 9 pages. Non-Final Office Action for U.S. Appl. No. 14/885,202, dated Apr. 14, 2016, 5 pages. Final Office Action for U.S. Appl. No. 14/885,202, dated Sep. 27, 2016, 7 pages. Advisory Action for U.S. Appl. No. 14/885,202, dated Nov. 29, 2016, 3 pages. Notice of Allowance for U.S. Appl. No. 14/885,202, dated Jan. 27, 2017, 7 pages. Notice of Allowance for U.S. Appl. No. 14/885,202, dated Jul. 24, 2017, 8 pages. Notice of Allowance for U.S. Appl. No. 14/885,243, dated Aug. 31, 2016, 8 pages. Non-Final Office Action for U.S. Appl. No. 12/906,689, dated May 27, 2011, 13 pages. Non-Final Office Action for U.S. Appl. No. 12/906,689, dated Nov. 4, 2011, 20 pages. Search Report for Japanese Patent Application No. 2011-229152, dated Feb. 22, 2013, 58 pages. Office Action for Japanese Patent Application No. 2011-229152, drafted May 10, 2013, 7 pages. Final Rejection for Japanese Patent Application No. 2011-229152, drafted Oct. 25, 2013, 2 pages. International Search Report and Written Opinion for PCT/US2016/045809, dated Oct. 7, 2016, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/652,867, dated Oct. 10, 2017, 5 pages.
Chapter 9: Lamination. Bernheim et al., “Chapter 9: Lamination,” Tools and Manufacturing Engineers Handbook (book), Apr. 1, 1996, Society of Manufactur- ing Engineers, p. 9-1. Fillion R. et al., “Development of a Plastic Encapsulated Multichip Technology for High Volume, Low Cost Commercial Electronics,” Electronic Components and Technology Conference, vol. 1, May 1994, IEEE, 5 pages.
New Thermoplastic Polymer Sub- strate for Microstrip Antennas at 60 GHz. Henawy, Mahmoud Al et al., “New Thermoplastic Polymer Sub- strate for Microstrip Antennas at 60 GHz,” German Microwave Conference, Mar. 15-17, 2010, Berlin, Germany, IEEE, pp. 5-8. International Search Report and Written Opinion for PCT/US2017/046744, dated Nov. 27, 2017, 17 pages. International Search Report and Written Opinion for PCT/US2017/046758, dated Nov. 16, 2017, 19 pages. International Search Report and Written Opinion for PCT/US2017/046779, dated Nov. 29, 2017, 17 pages. Non-Final Office Action for U.S. Appl. No. 15/616,109, dated Oct. 23, 2017, 16 pages. Corrected Notice of Allowability for U.S. Appl. No. 14/851,652, dated Oct. 20, 2017, 5 pages. Final Office Action for U.S. Appl. No. 15/262,457, dated Dec. 19, 2017, 12 pages. Supplemental Notice of Allowability and Applicant-Initiated Inter- view Summary for U.S. Appl. No. 15/287,273, dated Oct. 18, 2017, 6 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Nov. 2, 2017, 5 pages. Non-Final Office Action for U.S. Appl. No. 15/491,064, dated Jan. 2, 2018, 9 pages. Notice of Allowance for U.S. Appl. No. 14/872,910, dated Nov. 17, 2017, 11 pages. Notice of Allowance for U.S. Appl. No. 15/648,082, dated Nov. 29, 2017, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/652,826, dated Nov. 3, 2017, 5 pages. Notice of Allowance for U.S. Appl. No. 15/229,780, dated Oct. 3, 2017, 7 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Jan. 17, 2018, 5 pages. Notice of Allowance for U.S. Appl. No. 15/498,040, dated Feb. 20, 2018, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/387,855, dated Jan. 16, 2018, 7 pages. Non-Final Office Action for U.S. Appl. No. 15/795,915, dated Feb. 23, 2018, 6 pages. International Preliminary Report on Patentability for PCT/US2016/045809, dated Feb. 22, 2018, 8 pages. Advisory Action and Applicant-Initiated Interview Summary for U.S. Appl. No. 15/262,457, dated Feb. 28, 2018, 5 pages. Supplemental Notice ofAllowability for U.S.Appl. No. 15/287,273, dated Feb. 23, 2018, 5 pages. Non-Final Office Action for U.S. Appl. No. 15/676,415, dated Mar. 27, 2018, 14 page. Non-Final Office Action for U.S. Appl. No. 15/676,621, dated Mar. 26, 2018, 16 pages. Notice of Allowance for U.S. Appl. No. 15/795,915, dated Jun. 15, 2018, 7 pages. Final Office Action for U.S. Appl. No. 15/387,855, dated May 24, 2018, 9 pages. Non-Final Office Action for U.S. Appl. No. 15/262,457, dated Apr. 19, 2018, 10 pages. Notice of Allowance for U.S. Appl. No. 15/491,064, dated Apr. 30, 2018, 9 pages.
Non-Final Office Action for U.S. Appl. No. 15/601,858, dated Jun. 26, 2018, 12 pages. Notice of Allowance for U.S. Appl. No. 15/616,109, dated Jul. 2, 2018, 7 pages. Notice of Allowance for U.S. Appl. No. 15/676,621, dated Jun. 5, 2018, 8 pages.
Substrate Crosstalk Reduction Using SOI Technology. Raskin, Jean-Pierre et al., “Substrate Crosstalk Reduction Using SOI Technology,” IEEE Transactions on Electron Devices, vol. 44, No. 12, Dec. 1997, pp. 2252-2261. Rong, B., et al., “Surface-Passivated High-Resistivity Silicon Sub- strates for RFICs,” IEEE Electron Device Letters, vol. 25, No. 4, Apr. 2004, pp. 176-178.
Plastics that Conduct Heat. Sherman, Lilli M., “Plastics that Conduct Heat,” Plastics Technol- ogy Online, Jun. 2001, Retrieved May 17, 2016, http://www.ptonline. com/articles/plastics-that-conduct-heat, Gardner Business Media, Inc., 5 pages. Tombak, A., et al., “High-Efficiency Cellular Power Ampliﬁers Based on a Modiﬁed LDMOS Process on Bulk Silicon and Silicon- On-Insulator Substrates with Integrated Power Management Cir- cuitry,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, No. 6, Jun. 2012, pp. 1862-1869. Yamanaka, A., et al., “Thermal Conductivity of High-Strength Polyetheylene Fiber and Applications for Cryogenic Use,” Interna- tional Scholarly Research Network, ISRN Materials Science, vol. 2011, Article ID 718761, May 25, 2011, 10 pages. Non-Final Office Action for U.S. Appl. No. 13/852,648, dated Jul. 18, 2013, 20 pages. Final Office Action for U.S. Appl. No. 13/852,648, dated Nov. 26, 2013, 21 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 13/852,648, dated Jan. 27, 2014, 4 pages. Advisory Action for U.S. Appl. No. 13/852,648, dated Mar. 7, 2014, 4 pages. Notice of Allowance for U.S. Appl. No. 13/852,648, dated Jun. 16, 2014, 9 pages. Notice of Allowance for U.S. Appl. No. 13/852,648, dated Sep. 26, 2014, 8 pages. Notice of Allowance for U.S. Appl. No. 13/852,648, dated Jan. 22, 2015, 8 pages. Non-Final Office Action for U.S. Appl. No. 13/852,648, dated Jun. 24, 2015, 20 pages. Final Office Action for U.S. Appl. No. 13/852,648, dated Oct. 22, 2015, 20 pages. Non-Final Office Action for U.S. Appl. No. 13/852,648, dated Feb. 19, 2016, 12 pages. Final Office Action for U.S. Appl. No. 13/852,648, dated Jul. 20, 2016, 14 pages. Non-Final Office Action for U.S. Appl. No. 14/315,765, dated Jan. 2, 2015, 6 pages. Final Office Action for U.S. Appl. No. 14/315,765, dated May 11, 2015, 17 pages. Advisory Action for U.S. Appl. No. 14/315,765, dated Jul. 22, 2015, 3 pages. Non-Final Office Action for U.S. Appl. No. 14/260,909, dated Mar. 20, 2015, 20 pages. Final Office Action for U.S. Appl. No. 14/260,909, dated Aug. 12, 2015, 18 pages. Non-Final Office Action for U.S. Appl. No. 14/261,029, dated Dec. 5, 2014, 15 pages. Notice of Allowance for U.S. Appl. No. 14/261,029, dated Apr. 27, 2015, 10 pages. Corrected Notice of Allowability for U.S. Appl. No. 14/261,029, dated Nov. 17, 2015, 5 pages. Non-Final Office Action for U.S. Appl. No. 14/529,870, dated Feb. 12, 2016, 14 pages. Notice of Allowance for U.S. Appl. No. 14/529,870, dated Jul. 15, 2016, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/293,947, dated Apr. 7, 2017, 12 pages. Notice of Allowance for U.S. Appl. No. 15/293,947, dated Aug. 14, 2017, 7 pages. Non-Final Office Action for U.S. Appl. No. 14/715,830, dated Apr. 13, 2016, 16 pages. Final Office Action for U.S. Appl. No. 14/715,830, dated Sep. 6, 2016, 13 pages. Advisory Action for U.S. Appl. No. 14/715,830, dated Oct. 31, 2016, 6 pages. Notice of Allowance for U.S. Appl. No. 14/715,830, dated Feb. 10, 2017, 8 pages. Notice of Allowance for U.S. Appl. No. 14/715,830, dated Mar. 2, 2017, 8 pages. Non-Final Office Action for U.S. Appl. No. 14/851,652, dated Oct. 7, 2016, 10 pages. Notice of Allowance for U.S. Appl. No. 14/851,652, dated Apr. 11, 2017, 9 pages. Corrected Notice of Allowance for U.S. Appl. No. 14/851,652, dated Jul. 24, 2017, 6 pages. Corrected Notice of Allowance for U.S. Appl. No. 14/851,652, dated Sep. 6, 2017, 5 pages. Notice of Allowance for U.S. Appl. No. 14/959,129, dated Oct. 11, 2016, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/173,037, dated Jan. 10, 2017, 8 pages. Final Office Action for U.S. Appl. No. 15/173,037, dated May 2, 2017, 13 pages. Advisory Action for U.S. Appl. No. 15/173,037, dated Jul. 20, 2017, 3 pages. Notice of Allowance for U.S. Appl. No. 15/173,037, dated Aug. 9, 2017, 7 pages. Non-Final Office Action for U.S. Appl. No. 15/085,185, dated Feb. 15, 2017, 10 pages. Non-Final Office Action for U.S. Appl. No. 15/085,185, dated Jun. 6, 2017, 5 pages. Non-Final Office Action for U.S. Appl. No. 15/229,780, dated Jun. 30, 2017, 12 pages. Non-Final Office Action for U.S. Appl. No. 15/262,457, dated Aug. 7, 2017, 10 pages. Notice of Allowance for U.S. Appl. No. 15/408,560, dated Sep. 25, 2017, 8 pages. Notice of Allowance for U.S. Appl. No. 15/287,202, dated Aug. 25, 2017, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/353,346, dated May 23, 2017, 15 pages. Notice of Allowance for U.S. Appl. No. 15/353,346, dated Sep. 25, 2017, 9 pages. Notice of Allowance for U.S. Appl. No. 16/427,019, dated Mar. 10, 2023, 10 pages. Non-Final Office Action for U.S. Appl. No. 16/678,551, dated Mar. 28, 2023, 14 pages. Notice of Allowance for U.S. Appl. No. 17/573,112, dated Mar. 8, 2023, 8 pages. Notice of Allowance for U.S. Appl. No. 17/554,477, dated Mar. 7, 2023, 8 pages. Final Office Action for U.S. Appl. No. 16/844,406, dated Mar. 6, 2023, 13 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Mar. 1, 2023, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Apr. 12, 2023, 4 pages. Non-Final Office Action for U.S. Appl. No. 17/121,194, dated May 9, 2023, 22 pages. Non-Final Office Action for U.S. Appl. No. 17/102,957, dated Apr. 13, 2023, 24 pages. Non-Final Office Action for U.S. Appl. No. 17/389,977, dated Mar. 28, 2023, 10 pages. Written Decision on Registration for Korean Patent Application No. 10-2018-7006660, dated Feb. 24, 2023, 8 pages. Decision to Grant for Japanese Patent Application No. 2022032477, dated Mar. 14, 2023, 5 pages. Decision of Rejection for Chinese Patent Application No. 201780058052.6, dated Mar. 30, 2023, 16 pages.
Office Action for Taiwanese Patent Application No. 109102892, dated Apr. 14, 2023, 18 pages. Advisory Action for U.S. Appl. No. 16/844,406, dated May 12, 2023, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Apr. 11, 2022, 3 pages. Final Office Action for U.S. Appl. No. 16/844,406, dated Jun. 24, 2022, 17 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, dated Aug. 17, 2022, 7 pages. Non-Final Office Action for U.S. Appl. No. 16/427,019, dated Aug. 15, 2022, 17 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Jul. 14, 2022, 3 pages. Final Office Action for U.S. Appl. No. 16/678,586, dated Sep. 1, 2022, 7 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Jul. 14, 2022, 4 pages. Advisory Action for U.S. Appl. No. 16/844,406, dated Jul. 26, 2022, 3 pages. Corrected Notice of Allowability U.S. Appl. No. 17/109,935, dated Jul. 1, 2022, 4 pages. Corrected Notice of Allowability U.S. Appl. No. 17/109,935, dated Jul. 27, 2022, 4 pages. Final Office Action for U.S. Appl. No. 17/102,957, dated Aug. 18, 2022, 12 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/063094, dated Aug. 9, 2022, 24 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Sep. 2, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Sep. 2, 2022, 4 pages. Notice of Allowance for U.S. Appl. No. 16/390,496, dated Oct. 27, 2022, 21 pages. Notice of Allowance for U.S. Appl. No. 16/204,214, dated Oct. 28, 2022, 11 pages. Final Office Action for U.S. Appl. No. 16/427,019, dated Dec. 12, 2022, 19 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Oct. 4, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Nov. 2, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Dec. 7, 2022, 3 pages. Non-Final Office Action for U.S. Appl. No. 17/573,112, dated Dec. 9, 2022, 6 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Nov. 14, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Dec. 9, 2022, 4 pages. Non-Final Office Action for U.S. Appl. No. 17/554,477, dated Nov. 25, 2022, 6 pages. Notice of Allowance for U.S. Appl. No. 17/109,935, dated Oct. 28, 2022, 7 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Nov. 10, 2022, 4 pages. First OfficeAction for Chinese PatentApplication No. 201780062516. 0, dated Nov. 2, 2022, 10 pages. Notice of Reasons for Rejection for Japanese PatentApplication No. 2022032477, dated Oct. 3, 2022, 4 pages. First OfficeAction for Chinese PatentApplication No. 201780058052. 6, dated Nov. 2, 2022, 22 pages. Notice of Allowance for U.S. Appl. No. 17/330,787, dated Dec. 15, 2022, 7 pages. Non-Final Office Action for U.S. Appl. No. 15/676,693, dated May 3, 2018, 14 pages. Notice of Allowance for U.S. Appl. No. 15/789,107, dated May 18, 2018, 8 pages. Final Office Action for U.S. Appl. No. 15/616,109, dated Apr. 19, 2018, 18 pages. Notice of Allowance for U.S. Appl. No. 15/676,693, dated Jul. 20, 2018, 8 pages. Notice of Allowance for U.S. Appl. No. 15/695,629, dated Jul. 11, 2018, 12 pages. Notice of Allowance for U.S. Appl. No. 15/387,855, dated Aug. 10, 2018, 7 pages. Notice of Allowance for U.S. Appl. No. 15/914,538, dated Aug. 1, 2018, 9 pages. Notice of Allowance and Applicant-Initiated Interview Summary for U.S. Appl. No. 15/262,457, dated Sep. 28, 2018, 16 pages. Corrected Notice of Allowance for U.S. Appl. No. 15/676,693, dated Aug. 29, 2018, 5 pages. Final Office Action for U.S. Appl. No. 15/601,858, dated Nov. 26, 2018, 16 pages. Non-Final Office Action for U.S. Appl. No. 15/945,418, dated Nov. 1, 2018, 13 pages. First OfficeAction for Chinese PatentApplication No. 201510746323. X, dated Nov. 2, 2018, 12 pages. Advisory Action for U.S. Appl. No. 15/601,858, dated Jan. 22, 2019, 3 pages. Notice of Allowance for U.S. Appl. No. 16/038,879, dated Jan. 9, 2019, 8 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated Jan. 11, 2019, 8 pages. International Preliminary Report on Patentability for PCT/US2017/046744, dated Feb. 21, 2019, 11 pages. International Preliminary Report on Patentability for PCT/US2017/046758, dated Feb. 21, 2019, 11 pages. International Preliminary Report on Patentability for PCT/US2017/046779, dated Feb. 21, 2019, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/992,613, dated Feb. 27, 2019, 15 pages. Non-Final Office Action for U.S. Appl. No. 15/695,579, dated Jan. 28, 2019, 8 pages. Notice of Allowance for U.S. Appl. No. 15/992,639, dated May 9, 2019, 7 pages. Notice of Allowance for U.S. Appl. No. 15/695,579, dated Mar. 20, 2019, 8 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated May 13, 2019, 8 pages. Non-Final Office Action for U.S. Appl. No. 15/601,858, dated Apr. 17, 2019, 9 pages.
Smart GaN platform; Performance & Challenges. Tsai, Chun-Lin, et al., “Smart GaN platform; Performance & Challenges,” IEEE International Electron Devices Meeting, 2017, 4 pages.
Performance Enhancement of Flip-Chip Packaged AlGAaN/GaN HEMTs by Strain Engineering Design. Tsai, Szu-Ping., et al., “Performance Enhancement of Flip-Chip Packaged AlGAaN/GaN HEMTs by Strain Engineering Design,” IEEE Transcations on Electron Devices, vol. 63, Issue 10, Oct. 2016, pp. 3876-3881. Final Office Action for U.S. Appl. No. 15/992,613, dated May 24, 2019, 11 pages. Non-Final Office Action for U.S. Appl. No. 15/873,152, dated May 24, 2019, 11 pages. Notice of Allowance for U.S. Appl. No. 16/168,327, dated Jun. 28, 2019, 7 pages.
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application. Lin, Yueh, Chin, et al., “Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application,” IEEE Elec- tronic Device Letters, vol. 38, Issue 8, 2017, 4 pages.
GaN-on-Si Switched Mode RF Power Ampliﬁers for Non-Constant Envelope Signals. Shukla, Shishir, et al., “GaN-on-Si Switched Mode RF Power Ampliﬁers for Non-Constant Envelope Signals,” IEEE Topical Conference on RF/Microwave Power Ampliﬁers for Radio and Wireless Applications, 2017, pp. 88-91. International Search Report and Written Opinion for International Patent Application No. PCT/US19/25591, dated Jun. 21, 2019, 7 pages. Notice of Reasons for Refusal for Japanese Patent Application No. 2015-180657, dated Jul. 9, 2019, 4 pages. Notice of Allowance for U.S. Appl. No. 15/601,858, dated Aug. 16, 2019, 8 pages. Advisory Action for U.S. Appl. No. 15/992,613, dated Jul. 29, 2019, 3 pages.
Detailed Simulation Study of a Reverse Embedded- SiGE Strained-Silicon MOSFET. Final Office Action for U.S. Appl. No. 15/873,152, dated Aug. 8, 2019, 13 pages. Notice of Allowance for U.S. Appl. No. 15/975,230, dated Jul. 22, 2019, 7 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated Aug. 28, 2019, 8 pages. Fiorenza, et al., “Detailed Simulation Study of a Reverse Embedded- SiGE Strained-Silicon MOSFET,” IEEE Transactions on Electron Devices, vol. 55, Issue 2, Feb. 2008, pp. 640-648. Fiorenza, et al., “Systematic study of thick strained silicon NMOSFETs for digital applications,” International SiGE Technology and Device Meeting, May 2006, IEEE, 2 pages. Huang, et al., “Carrier Mobility Enhancement in Strained Si-On- Insulator Fabricated by Wafer Bonding,” Symposium on VLSI
Effect of Germanium content on mobility enhancement for strained silicon FET. Technology, Digest of Technical Papers, 2001, pp. 57-58. Nan, et al., “Effect of Germanium content on mobility enhancement for strained silicon FET,” Student Conference on Research and Development, Dec. 2017, IEEE, pp. 154-157.
Performance Enhancement of Strained-Si MOSFETs Fabricated on a Chemical-Mechanical-Polished SiGE Substrate. Sugii, Nobuyuki, et al., “Performance Enhancement of Strained-Si MOSFETs Fabricated on a Chemical-Mechanical-Polished SiGE Substrate,” IEEE Transactions on Electron Devices, vol. 49, Issue 12, Dec. 2002, pp. 2237-2243.
Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers. Yin, Haizhou, et al., “Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers,” International Electron Devices Meeting, Dec. 2003, San Francisco, California, IEEE, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/695,579, dated Feb. 5, 2020, 5 pages. Notice of Allowance for U.S. Appl. No. 15/992,613, dated Sep. 23, 2019, 7 pages. Non-Final Office Action for U.S. Appl. No. 16/204,214, dated Oct. 9, 2019, 15 pages. Non-Final Office Action for U.S. Appl. No. 15/816,637, dated Oct. 31, 2019, 10 pages. Advisory Action for U.S. Appl. No. 15/873,152, dated Oct. 11, 2019, 3 pages. Notice of Allowance for U.S. Appl. No. 15/873,152, dated Dec. 10, 2019, 9 pages. Final Office Action for U.S. Appl. No. 16/426,527, dated May 25, 2023, 9 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, dated Jun. 22, 2023, 8 pages. Final Office Action for U.S. Appl. No. 16/678,551, dated May 26, 2023, 16 pages. Non-Final Office Action for U.S. Appl. No. 16/844,406, dated Jun. 23, 2023, 18 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102894, dated Apr. 7, 2023, 20 pages. Non-Final Office Action for U.S. Appl. No. 16/527,702, dated Jan. 10, 2020, 10 pages. Office Action for Japanese Patent Application No. 2018-526613, dated Nov. 5, 2019, 8 pages. Intention to Grant for European Patent Application No. 17757646.9, dated Feb. 27, 2020, 55 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/034645, dated Sep. 19, 2019, 14 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/063460, dated Feb. 25, 2020, 14 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/055317, dated Feb. 6, 2020, 17 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/055321, dated Jan. 27, 2020, 23 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2019/034699, dated Oct. 29, 2019, 13 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/695,579, dated Apr. 1, 2020, 4 pages. Final Office Action for U.S. Appl. No. 16/204,214, dated Mar. 6, 2020, 14 pages. Notice of Allowance for U.S. Appl. No. 15/816,637, dated Apr. 2, 2020, 8 pages. Notice of Allowance for U.S. Appl. No. 16/527,702, dated Apr. 9, 2020, 8 pages. Decision of Rejection for Japanese Patent Application No. 2015- 180657, dated Mar. 17, 2020, 4 pages. Dhar, S. et al., “Electron Mobility Model for Strained-Si Devices,” IEEE Transactions on Electron Devices, vol. 52, No. 4, Apr. 2005, IEEE, pp. 527-533. Notice of Allowance for U.S. Appl. No. 16/038,879, dated Apr. 15, 2020, 9 pages. Notice of Allowance for U.S. Appl. No. 16/004,961, dated Apr. 30, 2020, 8 pages. Advisory Action for U.S. Appl. No. 16/204,214, dated Apr. 15, 2020, 3 pages. Examination Report for European PatentApplication No. 16751791. 1, dated Apr. 30, 2020, 15 pages. Notiﬁcation of Reasons for Refusal for Japanese Patent Application No. 2018-526613, dated May 11, 2020, 5 pages. Notice of Allowance for U.S. Appl. No. 15/873,152, dated May 11, 2020, 8 pages. Non-Final Office Action for U.S. Appl. No. 16/454,687, dated May 15, 2020, 14 pages. Welser, J. et al., “Electron Mobility Enhancement in Strained-Si N-Type Metal-Oxide-Semiconductor Field-Effect Transistors,” IEEE Electron Device Letters, vol. 15, No. 3, Mar. 1994, IEEE, pp. 100-102. Zeng, X. et al., “A Combination of Boron Nitride Nanotubes and Cellulose Nanoﬁbers for the Preparation of a Nanocomposite with High Thermal Conductivity,” ACS Nano, vol. 11, No. 5, 2017, American Chemical Society, pp. 5167-5178. Quayle Action for U.S. Appl. No. 16/703,251, mailed Jun. 26, 2020, 5 pages. Corrected Notice of Allowability for U.S. Appl. No. 15/695,579, dated May 20, 2020, 4 pages. Notice of Allowability for U.S. Appl. No. 15/695,579, dated Jun. 25, 2020, 4 pages. Notice of Allowance for U.S. Appl. No. 16/368,210, dated Jun. 17, 2020, 10 pages. Non-Final Office Action for U.S. Appl. No. 16/374,125, dated Jun. 26, 2020, 12 pages. Non-Final Office Action for U.S. Appl. No. 16/390,496, dated Jul. 10, 2020, 17 pages. Non-Final Office Action for U.S. Appl. No. 16/204,214, dated May 19, 2020, 15 pages. Non-Final Office Action for U.S. Appl. No. 16/454,809, dated May 15, 2020, 12 pages. Examination Report for Singapore Patent Application No. 11201901193U, dated May 26, 2020, 6 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014662, dated May 7, 2020, 18 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014665, dated May 13, 2020, 17 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014666, dated Jun. 4, 2020, 18 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014667, dated May 18, 2020, 14 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2020/014669, dated Jun. 4, 2020, 15 pages. Notice of Allowance for U.S. Appl. No. 16/454,687, dated Aug. 14, 2020, 7 pages. Decision to Grant for Japanese Patent Application No. 2018- 526613, dated Aug. 17, 2020, 5 pages.
Hybrid Bonding: From Concept to Commercializa- tion. Final Office Action for U.S. Appl. No. 16/454,809, dated Aug. 21, 2020, 12 pages. Von Trapp, F., “Hybrid Bonding: From Concept to Commercializa- tion,” Apr. 2, 2018, 3D InCities, https://www.3dincites.com/2018/04/hybrid-bonding-from-concept-to-commercialization/, 10 pages. Notice of Allowance for U.S. Appl. No. 16/703,251, dated Aug. 27, 2020, 8 pages. Notice of Allowance for U.S. Appl. No. 16/527,702, dated Nov. 13, 2020, 8 pages. Notice of Allowance for U.S. Appl. No. 16/374,125, dated Dec. 16, 2020, 9 pages. Final Office Action for U.S. Appl. No. 16/390,496, dated Dec. 24, 2020, 21 pages. Non-Final Office Action for U.S. Appl. No. 16/426,527, dated Nov. 20, 2020, 7 pages. Final Office Action for U.S. Appl. No. 16/204,214, dated Nov. 30, 2020, 15 pages. Notice of Allowance for U.S. Appl. No. 16/204,214, dated Feb. 17, 2021, 11 pages. Advisory Action for U.S. Appl. No. 16/454,809, dated Oct. 23, 2020, 3 pages. QuayleAction for U.S.Appl. No. 16/426,527, mailed May 26, 2022, 5 pages. Final Office Action for U.S. Appl. No. 16/427,019, dated Apr. 12, 2022, 15 pages. Advisory Action for U.S. Appl. No. 16/427,019, dated Jun. 2, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated May 13, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Jun. 15, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated May 6, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Jun. 10, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Apr. 8, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated May 13, 2022, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Jun. 10, 2022, 4 pages. Notice of Allowance for U.S. Appl. No. 17/109,935, dated Apr. 20, 2022, 15 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/063093, dated May 4, 2022, 15 pages. Invitation to Pay Additional Fees and Partial International Search for International PatentApplication No. PCT/US2021/063094, dated Apr. 19, 2022, 15 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/062509, dated Mar. 29, 2022, 20 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/426,527, dated Aug. 18, 2021, 4 pages. Advisory Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,551, dated Sep. 13, 2021, 3 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,551, dated Oct. 21, 2021, 8 pages. Advisory Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,573, dated Sep. 10, 2021, 3 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,573, dated Oct. 21, 2021, 7 pages. Non-Final Office Action for U.S. Appl. No. 16/678,586, dated Aug. 12, 2021, 16 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,602, dated Aug. 12, 2021, 11 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Aug. 26, 2021, 4 pages. Decision to Grant for Japanese Patent Application No. 2020119130, dated Sep. 7, 2021, 4 pages. SecondOfficeActionforChinesePatentApplicationNo.201680058198. 6, dated Sep. 8, 2021, 8 pages. First OfficeAction for Chinese PatentApplication No. 201980079375. 2, dated May 5, 2023, 17 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102895, dated May 30, 2023, 18 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102896, dated Jul. 4, 2023, 19 pages. Notice of Allowance for U.S. Appl. No. 16/454,809, dated Nov. 25, 2020, 8 pages. Non-Final Office Action for U.S. Appl. No. 16/427,019, dated Nov. 19, 2020, 19 pages. Non-Final Office Action for U.S. Appl. No. 16/678,573, dated Feb. 19, 2021, 11 pages. Non-Final Office Action for U.S. Appl. No. 16/678,602, dated Feb. 19, 2021, 10 pages. First OfficeAction for Chinese PatentApplication No. 201680058198. 6, dated Dec. 29, 2020, 14 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/025591, dated Oct. 15, 2020, 6 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/034645, dated Jan. 14, 2021, 9 pages. Advisory Action for U.S. Appl. No. 16/390,496, dated Mar. 1, 2021, 3 pages. Notice of Allowance for U.S. Appl. No. 16/390,496, dated Apr. 5, 2021, 7 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, dated May 14, 2021, 9 pages. Final Office Action for U.S. Appl. No. 16/427,019, dated May 21, 2021, 16 pages. Non-Final Office Action for U.S. Appl. No. 16/678,551, dated Apr. 7, 2021, 9 pages. Final Office Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,551, dated Jun. 28, 2021, 9 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 16/678,573, dated May 7, 2021, 2 pages. Final Office Action and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,573, dated Jun. 28, 2021, 10 pages. Notice of Allowance for U.S. Appl. No. 16/678,619, dated Jul. 8, 2021, 10 pages. Final Office Action for U.S. Appl. No. 16/678,602, dated Jun. 1, 2021, 9 pages. Notice of Reasons for Refusal for Japanese Patent Application No. 2020119130, dated Jun. 29, 2021, 4 pages. Notice of Reasons for Rejection for Japanese PatentApplication No. 2019507765, dated Jun. 28, 2021, 4 pages. Search Report for Japanese Patent Application No. 2019507768, dated Jul. 15, 2021, 42 pages. Notice of Reasons for Refusal for Japanese Patent Application No. 2019507768, dated Jul. 26, 2021, 4 pages. Supplementary Examination Report for Singapore Patent Applica- tion No. 11201901194S, dated Mar. 10, 2021, 3 pages. Reasons for Rejection for Japanese PatentApplication No. 2019507767, dated Jun. 25, 2021, 5 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/063460, dated Jun. 10, 2021, 9 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/055317, dated Apr. 22, 2021, 11 pages. International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/055321, dated Apr. 22, 2021, 14 pages. Office Action for Taiwanese Patent Application No. 108140788, dated Mar. 25, 2021, 18 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/109,935, dated Jan. 10, 2023, 4 pages. First OfficeAction for Chinese PatentApplication No. 201780063121. 2, dated Nov. 23, 2022, 12 pages.
Control of Selectivity between SiGe and Si in Isotropic Etching Processes. Preliminary Examination Report for Taiwanese Patent Application No. 108140788, dated Dec. 9, 2022, 13 pages. Non-Final Office Action for U.S. Appl. No. 16/426,527, dated Feb. 9, 2023, 9 pages. Non-Final Office Action for U.S. Appl. No. 17/330,787, dated Oct. 17, 2022, 10 pages. Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/678,586, dated Sep. 13, 2022, 11 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Oct. 5, 2022, 4 pages. Non-Final Office Action for U.S. Appl. No. 16/844,406, dated Oct. 6, 2022, 17 pages. Corrected Notice of Allowability U.S. Appl. No. 17/109,935, dated Sep. 14, 2022, 4 pages. Notice of Preliminary Rejection for Korean Patent Application No. 10-2018-7006660, dated Sep. 3, 2022, 6 pages. Advisory Action for U.S. Appl. No. 17/102,957, dated Oct. 27, 2022, 7 pages. Borel, S. et al., “Control of Selectivity between SiGe and Si in Isotropic Etching Processes,” Japanese Journal of Applied Physics, vol. 43, No. 6B, 2004, pp. 3964-3966. Non-Final Office Action for U.S. Appl. No. 16/427,019, dated Dec. 2, 2021, 17 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Nov. 24, 2021, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,551, dated Jan. 27, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Nov. 24, 2021, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,573, dated Jan. 27, 2022, 3 pages. Final Office Action for U.S. Appl. No. 16/678,586, dated Nov. 22, 2021, 15 pages. Advisory Action for U.S. Appl. No. 16/678,586, dated Jan. 26, 2022, 3 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Nov. 24, 2021, 4 pages. Corrected Notice of Allowability for U.S. Appl. No. 16/678,602, dated Dec. 30, 2021, 4 pages. Decision of Rejection for Chinese Patent Application No. 201680058198.6, dated Nov. 12, 2021, 6 pages. Examination Report for European PatentApplication No. 17755402. 9, dated Dec. 20, 2021, 12 pages. Examination Report for European PatentApplication No. 17755403. 7, dated Dec. 20, 2021, 13 pages. Notice ofAllowance for Japanese PatentApplication No. 2019507767, dated Jan. 19, 2021, 6 pages. International Search Report and Written Opinion for International Patent Application No. PCT/US2021/043968, dated Nov. 19, 2021, 15 pages. Notice of Allowance for U.S. Appl. No. 16/390,496, mailed Aug. 24, 2023, 24 pages. Notice of Allowance for U.S. Appl. No. 17/970,078, mailed Aug. 25, 2023, 10 pages. Advisory Action for U.S. Appl. No. 16/678,551, mailed Jul. 28, 2023, 3 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 16/678,551, mailed Aug. 22, 2023, 7 pages. Applicant-Initiated Interview Summary for U.S.Appl. No. 16/844,406, mailed Sep. 13, 2023, 2 pages. Final Office Action for U.S. Appl. No. 16/844,406, mailed Sep. 28, 2023, 7 pages. Final Office Action for U.S. Appl. No. 17/121,194, mailed Sep. 7, 2023, 24 pages. Notice of Allowance for U.S. Appl. No. 17/389,977, mailed Aug. 16, 2023, 8 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/389,977, mailed Sep. 20, 2023, 5 pages. Office Action for Taiwanese Patent Application No. 108119536, mailed Jul. 13, 2023, 6 pages. First OfficeAction for Chinese PatentApplication No. 201980077328. 4, mailed Aug. 28, 2023, 15 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026777, mailed Jul. 28, 2023, 12 pages. Quayle Action for U.S. Appl. No. 16/678,551, mailed Oct. 4, 2023, 6 pages. Non-Final Office Action for U.S. Appl. No. 16/678,602, mailed Oct. 6, 2023, 18 pages. Notice of Allowance for U.S. Appl. No. 17/121,194, mailed Oct. 23, 2023, 8 pages. Final Office Action for U.S. Appl. No. 17/102,957, mailed Oct. 26, 2023, 27 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/389,977, mailed Oct. 25, 2023, 5 pages. Board Opinion for Chinese Patent Application No. 201780058052. 6, mailed Oct. 8, 2023, 15 pages. First OfficeAction for Chinese PatentApplication No. 201980050433. 9, mailed Sep. 4, 2023, 20 pages. First OfficeAction for Chinese PatentApplication No. 201980090320. 1, mailed Sep. 5, 2023, 11 pages. Office Action for Taiwanese Patent Application No. 109102892, mailed Sep. 13, 2023, 18 pages. Preliminary Examination Report for Taiwanese Patent Application No. 109102893, mailed Sep. 7, 2023, 10 pages. Notice of Allowance for for U.S. Appl. No. 16/844,406, mailed, Nov. 16, 2023, 11 pages. Notice of Allowance for U.S. Appl. No. 16/678,551, mailed Dec. 7, 2023, 9 pages. Corrected Notice of Allowability for U.S. Appl. No. 17/389,977, mailed Nov. 24, 2023, 5 pages. Office Action for Taiwanese Patent Application No. 108119536, mailed Nov. 24, 2023, 22 pages. Preliminary Examination Report for Taiwanese Patent Application No. 108143149, mailed Oct. 18, 2023, 30 pages. SecondOfficeActionforChinesePatentApplicationNo.201980079375. 2, mailed Nov. 21, 2023, 17 pages. Office Action for Taiwanese Patent Application No. 109102895, dated Nov. 30, 2023, 16 pages. Notice of Allowance for U.S. Appl. No. 16/426,527, mailed Jan. 22, 2024, 10 pages. Non-Final Office Action for U.S. Appl. No. 18/306,599, mailed Jan. 22, 2024, 11 pages. Notice of Allowance for U.S. Appl. No. 17/389,977, mailed Jan. 18, 2024, 17 pages. Board Opinion for Chinese Patent Application No. 201780058052. 6, mailed Jan. 15, 2024, 28 pages. Reasons for Rejection forTaiwanese PatentApplication No. 109102896, mailed Dec. 13, 2023, 17 pages. Notice of Allowance for U.S. Appl. No. 18/306,599, mailed Apr. 10, 2024, 8 pages. Notice of Allowance and Applicant-Initiated Interview Summary for U.S. Appl. No. 16/678,602, mailed Mar. 7, 2024, 14 pages. Notice ofAllowance forTaiwanese PatentApplication No. 108119536, mailed Apr. 30, 2024, 4 pages. SecondOfficeActionforChinesePatentApplicationNo.201980077328. 4, mailed Mar. 29, 2024, 14 pages. Office Action for Taiwanese Patent Application No. 113110397, mailed May 7, 2024, 10 pages. Notice of Prelimiary Rejection for Korean Patent Application No. 1020217026747, mailed May 1, 2024, 5 pages. Notice ofAllowance for U.S.Appl. No. 18/151,235, mailed May 29, 2024, 22 pages. Notice of Allowance for U.S. Appl. No. 17/102,957, mailed Jun. 25, 2024, 11 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026777, mailed Apr. 23, 2024, 15 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026784, mailed May 28, 2024, 13 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026776, mailed May 20, 2024, 4 pages.
Notice of Preliminary Rejection for Korean Patent Application No. 1020217026748, mailed May 22, 2024, 15 pages. Notice of Preliminary Rejection for Korean Patent Application No. 1020217026781, mailed May 29, 2024, 13 pages.