Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 3 are views illustrating layered structures of a semiconductor device according to one embodiment of the present invention;
FIG. 2, the semiconductor layer 103 is formed on the substrate 102. The hBN layer 101 is disposed on a rear surface (lower surface) of the substrate 102, and …
FIG. 3, the hBN layer 101 is 25 disposed on the substrate 102, and the semiconductor layer 103 is formed thereon. The hBN layer 101 is also provided under the …
FIGS. 4 to 6 are views illustrating layered structures of a semiconductor device according to another embodiment;
FIG. 5, the semiconductor 45 layer 103 is formed on the substrate 102. The multi-hBN- regions layer 201 and 202 are disposed under the substrate 102, and the …
FIG. 6, the multi-hBN- regions layer 201 and 202 are disposed on the substrate 102, 50 and the semiconductor layer 103 is formed thereon. The multi-hBN-regions …
FIG. 7 is a schematic view of a blue LED package manufactured on a glass according to the present invention;
FIG. 8 is a schematic view of a blue LED package manufactured on a copper heat sink according to the present invention;
FIG. 9 illustrates heat distribution images of blue LED packages according to the present invention; and
FIGS. 10A and 10B are graphs showing a temperature over time of blue LED packages according to the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light-emitting diode (LED) or field-effect transistor (FET) semiconductor device with a high heat dissipation property using hexagonal boron nitride (hBN), comprising: a substrate of the LED or FET semiconductor device having a first surface and a second surface; a semiconductor layer formed on the first surface of the substrate of the LED or FET semiconductor device, the semiconductor layer being made of at least one material selected from a compound formed by bonding zinc to oxygen or selenide and a compound formed by bonding aluminum, gallium, or indium to nitrogen, arsenic, or phosphorus; an hBN layer having a 2-dimensional nanostructure, being formed on at least one surface of the first surface and the second surface of the substrate of the LED or FET semiconductor device, and having a thickness of 10 Å to 200 mm; and a heat sink positioned on the second surface of the substrate of the LED or FET semiconductor device.
The semiconductor device of claim 1, wherein the hBN layer is formed on the first surface of the substrate of the LED or FET semiconductor device, the hBN layer formed on the first surface being formed between the first surface of the substrate of the LED or FET semiconductor device and the semiconductor layer.
The semiconductor device of claim 1, wherein the hBN layer is formed on the second surface of the substrate of the LED or FET semiconductor device, the hBN layer formed on the second surface being formed between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The semiconductor device of claim 1, wherein the hBN layer is formed on each of the first surface and the second surface of the substrate of the LED or FET semiconductor device, the hBN layer formed on the first surface being formed between the first surface of the substrate of the LED or FET semiconductor device and the semiconductor layer, and the hBN layer formed on the second surface being formed between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The semiconductor device of claim 1, wherein the hBN layer has one of a single layer structure and a multi-layer structure.
The semiconductor device of claim 1, wherein the hBN layer comprises a plurality of hBN regions and a plurality of insulating regions positioned between the plurality of hBN regions, the plurality of hBN regions and the plurality of insulating regions being laterally disposed on a surface of the substrate of the LED or FET semiconductor device.
The semiconductor device of claim 1, wherein the semiconductor layer is an optoelectronic semiconductor made of a material comprising at least one selected from among atoms of Groups II, III, IV, and V.
The semiconductor device of claim 1, wherein the semiconductor layer is an optoelectronic semiconductor formed to have one of bulk, thin film, quantum well, nano wire, and quantum dot structures.
The semiconductor device of claim 1, wherein the hBN layer has one structure of a single crystalline structure and a polycrystalline structure.
The semiconductor device of claim 1, wherein the hBN layer is formed on the substrate of the LED or FET semiconductor device through a transfer method.
The semiconductor device of claim 1, wherein the heat sink is made of one material selected from among a metal and a ceramic-based material.
A method of manufacturing a light-emitting diode (LED) or field-effect transistor (FET) semiconductor device with a high heat dissipation property using hexagonal boron nitride (hBN), the method comprising: forming a semiconductor layer, using at least one material selected from a compound formed by bonding zinc to oxygen or selenide and a compound formed by bonding aluminum, gallium, or indium to nitrogen, arsenic or phosphorus on a first surface of a substrate of the LED or FET semiconductor device having the first surface and a second surface; forming an hBN layer having a 2-dimensional nanostruc-ture on at least one surface of the first surface and the second surface of the substrate of the LED or FET semiconductor device, the hBN layer having a thick-ness of 10 Å to 200 nm; and attaching a heat sink to the second surface of the substrate of the LED or FET semiconductor device.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed between the first B₂ surface of the substrate of the LED or FET semiconductor device and the semiconductor layer.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed between the first surface of the substrate of the LED or FET semiconductor device and the semiconductor layer and between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The method of claim 12, wherein, in the forming of the hBN layer, a plurality of hBN regions are formed to be laterally disposed on a surface of the substrate of the LED or FET semiconductor device with insulating regions interposed therebetween.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed on the substrate of the LED or FET semiconductor device through a transfer method. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Two types of LED element packages were manufactured to verify effects of the invention. Blue LED devices with hBN layers transferred to thicknesses of 10 nm, 20 nm, or 30 nm on the rear surface of the substrate were attached to glass without a heat sink and connected to electrodes through bonding wires (FIG. 7). A second configuration connected blue LED devices with hBN layers to electrodes (FIG. 8).
Layer stacks claimed or described, ordered top of device to substrate.
LED or FET semiconductor device with hBN heat dissipation layer
Materials described outside the worked examples.
optoelectronic semiconductor layer material
zinc oxide
ZnO
zinc selenide
ZnSe
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
gallium nitride
GaN
indium aluminum gallium nitride
InAlGaN
indium gallium nitride
InGaN
indium nitride
InN
gallium arsenide
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
theoretical in-plane thermal conductivity of hBN | 2000 W/mK | hBN |
Temperature | 28–35 °C | — |
Thickness | 1–200 nm | — |
Thickness | 1–200000000 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 3 are views illustrating layered structures of a semiconductor device according to one embodiment of the present invention;
FIG. 2, the semiconductor layer 103 is formed on the substrate 102. The hBN layer 101 is disposed on a rear surface (lower surface) of the substrate 102, and …
FIG. 3, the hBN layer 101 is 25 disposed on the substrate 102, and the semiconductor layer 103 is formed thereon. The hBN layer 101 is also provided under the …
FIGS. 4 to 6 are views illustrating layered structures of a semiconductor device according to another embodiment;
FIG. 5, the semiconductor 45 layer 103 is formed on the substrate 102. The multi-hBN- regions layer 201 and 202 are disposed under the substrate 102, and the …
FIG. 6, the multi-hBN- regions layer 201 and 202 are disposed on the substrate 102, 50 and the semiconductor layer 103 is formed thereon. The multi-hBN-regions …
FIG. 7 is a schematic view of a blue LED package manufactured on a glass according to the present invention;
FIG. 8 is a schematic view of a blue LED package manufactured on a copper heat sink according to the present invention;
FIG. 9 illustrates heat distribution images of blue LED packages according to the present invention; and
FIGS. 10A and 10B are graphs showing a temperature over time of blue LED packages according to the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light-emitting diode (LED) or field-effect transistor (FET) semiconductor device with a high heat dissipation property using hexagonal boron nitride (hBN), comprising: a substrate of the LED or FET semiconductor device having a first surface and a second surface; a semiconductor layer formed on the first surface of the substrate of the LED or FET semiconductor device, the semiconductor layer being made of at least one material selected from a compound formed by bonding zinc to oxygen or selenide and a compound formed by bonding aluminum, gallium, or indium to nitrogen, arsenic, or phosphorus; an hBN layer having a 2-dimensional nanostructure, being formed on at least one surface of the first surface and the second surface of the substrate of the LED or FET semiconductor device, and having a thickness of 10 Å to 200 mm; and a heat sink positioned on the second surface of the substrate of the LED or FET semiconductor device.
The semiconductor device of claim 1, wherein the hBN layer is formed on the first surface of the substrate of the LED or FET semiconductor device, the hBN layer formed on the first surface being formed between the first surface of the substrate of the LED or FET semiconductor device and the semiconductor layer.
The semiconductor device of claim 1, wherein the hBN layer is formed on the second surface of the substrate of the LED or FET semiconductor device, the hBN layer formed on the second surface being formed between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The semiconductor device of claim 1, wherein the hBN layer is formed on each of the first surface and the second surface of the substrate of the LED or FET semiconductor device, the hBN layer formed on the first surface being formed between the first surface of the substrate of the LED or FET semiconductor device and the semiconductor layer, and the hBN layer formed on the second surface being formed between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The semiconductor device of claim 1, wherein the hBN layer has one of a single layer structure and a multi-layer structure.
The semiconductor device of claim 1, wherein the hBN layer comprises a plurality of hBN regions and a plurality of insulating regions positioned between the plurality of hBN regions, the plurality of hBN regions and the plurality of insulating regions being laterally disposed on a surface of the substrate of the LED or FET semiconductor device.
The semiconductor device of claim 1, wherein the semiconductor layer is an optoelectronic semiconductor made of a material comprising at least one selected from among atoms of Groups II, III, IV, and V.
The semiconductor device of claim 1, wherein the semiconductor layer is an optoelectronic semiconductor formed to have one of bulk, thin film, quantum well, nano wire, and quantum dot structures.
The semiconductor device of claim 1, wherein the hBN layer has one structure of a single crystalline structure and a polycrystalline structure.
The semiconductor device of claim 1, wherein the hBN layer is formed on the substrate of the LED or FET semiconductor device through a transfer method.
The semiconductor device of claim 1, wherein the heat sink is made of one material selected from among a metal and a ceramic-based material.
A method of manufacturing a light-emitting diode (LED) or field-effect transistor (FET) semiconductor device with a high heat dissipation property using hexagonal boron nitride (hBN), the method comprising: forming a semiconductor layer, using at least one material selected from a compound formed by bonding zinc to oxygen or selenide and a compound formed by bonding aluminum, gallium, or indium to nitrogen, arsenic or phosphorus on a first surface of a substrate of the LED or FET semiconductor device having the first surface and a second surface; forming an hBN layer having a 2-dimensional nanostruc-ture on at least one surface of the first surface and the second surface of the substrate of the LED or FET semiconductor device, the hBN layer having a thick-ness of 10 Å to 200 nm; and attaching a heat sink to the second surface of the substrate of the LED or FET semiconductor device.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed between the first B₂ surface of the substrate of the LED or FET semiconductor device and the semiconductor layer.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed between the first surface of the substrate of the LED or FET semiconductor device and the semiconductor layer and between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The method of claim 12, wherein, in the forming of the hBN layer, a plurality of hBN regions are formed to be laterally disposed on a surface of the substrate of the LED or FET semiconductor device with insulating regions interposed therebetween.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed on the substrate of the LED or FET semiconductor device through a transfer method. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Two types of LED element packages were manufactured to verify effects of the invention. Blue LED devices with hBN layers transferred to thicknesses of 10 nm, 20 nm, or 30 nm on the rear surface of the substrate were attached to glass without a heat sink and connected to electrodes through bonding wires (FIG. 7). A second configuration connected blue LED devices with hBN layers to electrodes (FIG. 8).
Layer stacks claimed or described, ordered top of device to substrate.
LED or FET semiconductor device with hBN heat dissipation layer
Materials described outside the worked examples.
optoelectronic semiconductor layer material
zinc oxide
ZnO
zinc selenide
ZnSe
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
gallium nitride
GaN
indium aluminum gallium nitride
InAlGaN
indium gallium nitride
InGaN
indium nitride
InN
gallium arsenide
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
theoretical in-plane thermal conductivity of hBN | 2000 W/mK | hBN |
Temperature | 28–35 °C | — |
Thickness | 1–200 nm | — |
Thickness | 1–200000000 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 3 are views illustrating layered structures of a semiconductor device according to one embodiment of the present invention;
FIG. 2, the semiconductor layer 103 is formed on the substrate 102. The hBN layer 101 is disposed on a rear surface (lower surface) of the substrate 102, and …
FIG. 3, the hBN layer 101 is 25 disposed on the substrate 102, and the semiconductor layer 103 is formed thereon. The hBN layer 101 is also provided under the …
FIGS. 4 to 6 are views illustrating layered structures of a semiconductor device according to another embodiment;
FIG. 5, the semiconductor 45 layer 103 is formed on the substrate 102. The multi-hBN- regions layer 201 and 202 are disposed under the substrate 102, and the …
FIG. 6, the multi-hBN- regions layer 201 and 202 are disposed on the substrate 102, 50 and the semiconductor layer 103 is formed thereon. The multi-hBN-regions …
FIG. 7 is a schematic view of a blue LED package manufactured on a glass according to the present invention;
FIG. 8 is a schematic view of a blue LED package manufactured on a copper heat sink according to the present invention;
FIG. 9 illustrates heat distribution images of blue LED packages according to the present invention; and
FIGS. 10A and 10B are graphs showing a temperature over time of blue LED packages according to the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light-emitting diode (LED) or field-effect transistor (FET) semiconductor device with a high heat dissipation property using hexagonal boron nitride (hBN), comprising: a substrate of the LED or FET semiconductor device having a first surface and a second surface; a semiconductor layer formed on the first surface of the substrate of the LED or FET semiconductor device, the semiconductor layer being made of at least one material selected from a compound formed by bonding zinc to oxygen or selenide and a compound formed by bonding aluminum, gallium, or indium to nitrogen, arsenic, or phosphorus; an hBN layer having a 2-dimensional nanostructure, being formed on at least one surface of the first surface and the second surface of the substrate of the LED or FET semiconductor device, and having a thickness of 10 Å to 200 mm; and a heat sink positioned on the second surface of the substrate of the LED or FET semiconductor device.
The semiconductor device of claim 1, wherein the hBN layer is formed on the first surface of the substrate of the LED or FET semiconductor device, the hBN layer formed on the first surface being formed between the first surface of the substrate of the LED or FET semiconductor device and the semiconductor layer.
The semiconductor device of claim 1, wherein the hBN layer is formed on the second surface of the substrate of the LED or FET semiconductor device, the hBN layer formed on the second surface being formed between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The semiconductor device of claim 1, wherein the hBN layer is formed on each of the first surface and the second surface of the substrate of the LED or FET semiconductor device, the hBN layer formed on the first surface being formed between the first surface of the substrate of the LED or FET semiconductor device and the semiconductor layer, and the hBN layer formed on the second surface being formed between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The semiconductor device of claim 1, wherein the hBN layer has one of a single layer structure and a multi-layer structure.
The semiconductor device of claim 1, wherein the hBN layer comprises a plurality of hBN regions and a plurality of insulating regions positioned between the plurality of hBN regions, the plurality of hBN regions and the plurality of insulating regions being laterally disposed on a surface of the substrate of the LED or FET semiconductor device.
The semiconductor device of claim 1, wherein the semiconductor layer is an optoelectronic semiconductor made of a material comprising at least one selected from among atoms of Groups II, III, IV, and V.
The semiconductor device of claim 1, wherein the semiconductor layer is an optoelectronic semiconductor formed to have one of bulk, thin film, quantum well, nano wire, and quantum dot structures.
The semiconductor device of claim 1, wherein the hBN layer has one structure of a single crystalline structure and a polycrystalline structure.
The semiconductor device of claim 1, wherein the hBN layer is formed on the substrate of the LED or FET semiconductor device through a transfer method.
The semiconductor device of claim 1, wherein the heat sink is made of one material selected from among a metal and a ceramic-based material.
A method of manufacturing a light-emitting diode (LED) or field-effect transistor (FET) semiconductor device with a high heat dissipation property using hexagonal boron nitride (hBN), the method comprising: forming a semiconductor layer, using at least one material selected from a compound formed by bonding zinc to oxygen or selenide and a compound formed by bonding aluminum, gallium, or indium to nitrogen, arsenic or phosphorus on a first surface of a substrate of the LED or FET semiconductor device having the first surface and a second surface; forming an hBN layer having a 2-dimensional nanostruc-ture on at least one surface of the first surface and the second surface of the substrate of the LED or FET semiconductor device, the hBN layer having a thick-ness of 10 Å to 200 nm; and attaching a heat sink to the second surface of the substrate of the LED or FET semiconductor device.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed between the first B₂ surface of the substrate of the LED or FET semiconductor device and the semiconductor layer.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed between the first surface of the substrate of the LED or FET semiconductor device and the semiconductor layer and between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The method of claim 12, wherein, in the forming of the hBN layer, a plurality of hBN regions are formed to be laterally disposed on a surface of the substrate of the LED or FET semiconductor device with insulating regions interposed therebetween.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed on the substrate of the LED or FET semiconductor device through a transfer method. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Two types of LED element packages were manufactured to verify effects of the invention. Blue LED devices with hBN layers transferred to thicknesses of 10 nm, 20 nm, or 30 nm on the rear surface of the substrate were attached to glass without a heat sink and connected to electrodes through bonding wires (FIG. 7). A second configuration connected blue LED devices with hBN layers to electrodes (FIG. 8).
Layer stacks claimed or described, ordered top of device to substrate.
LED or FET semiconductor device with hBN heat dissipation layer
Materials described outside the worked examples.
optoelectronic semiconductor layer material
zinc oxide
ZnO
zinc selenide
ZnSe
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
gallium nitride
GaN
indium aluminum gallium nitride
InAlGaN
indium gallium nitride
InGaN
indium nitride
InN
gallium arsenide
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
theoretical in-plane thermal conductivity of hBN | 2000 W/mK | hBN |
Temperature | 28–35 °C | — |
Thickness | 1–200 nm | — |
Thickness | 1–200000000 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
GALLIUM-NITRIDE-BASED MODULE WITH ENHANCED ELECTRICAL PERFORMANCE AND PROCESS FOR MAKING THE SAME
HIGH BREAKDOWN VOLTAGE STRUCTURE FOR HIGH PERFORMANCE GAN-BASED HEMT AND MOS DEVICES TO ENABLE GAN C-MOS
GALLIUM-NITRIDE-ON-HANDLE SUBSTRATE MATERIALS AND DEVICES AND METHOD OF MANUFACTURE
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HEXAGONAL BORON NITRIDE HEAT DISSIPATION STRUCTURE
WAFER LEVEL PACKAGED GAN POWER DEVICE AND MANUFACTURING METHOD THEREOF
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 3 are views illustrating layered structures of a semiconductor device according to one embodiment of the present invention;
FIG. 2, the semiconductor layer 103 is formed on the substrate 102. The hBN layer 101 is disposed on a rear surface (lower surface) of the substrate 102, and …
FIG. 3, the hBN layer 101 is 25 disposed on the substrate 102, and the semiconductor layer 103 is formed thereon. The hBN layer 101 is also provided under the …
FIGS. 4 to 6 are views illustrating layered structures of a semiconductor device according to another embodiment;
FIG. 5, the semiconductor 45 layer 103 is formed on the substrate 102. The multi-hBN- regions layer 201 and 202 are disposed under the substrate 102, and the …
FIG. 6, the multi-hBN- regions layer 201 and 202 are disposed on the substrate 102, 50 and the semiconductor layer 103 is formed thereon. The multi-hBN-regions …
FIG. 7 is a schematic view of a blue LED package manufactured on a glass according to the present invention;
FIG. 8 is a schematic view of a blue LED package manufactured on a copper heat sink according to the present invention;
FIG. 9 illustrates heat distribution images of blue LED packages according to the present invention; and
FIGS. 10A and 10B are graphs showing a temperature over time of blue LED packages according to the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light-emitting diode (LED) or field-effect transistor (FET) semiconductor device with a high heat dissipation property using hexagonal boron nitride (hBN), comprising: a substrate of the LED or FET semiconductor device having a first surface and a second surface; a semiconductor layer formed on the first surface of the substrate of the LED or FET semiconductor device, the semiconductor layer being made of at least one material selected from a compound formed by bonding zinc to oxygen or selenide and a compound formed by bonding aluminum, gallium, or indium to nitrogen, arsenic, or phosphorus; an hBN layer having a 2-dimensional nanostructure, being formed on at least one surface of the first surface and the second surface of the substrate of the LED or FET semiconductor device, and having a thickness of 10 Å to 200 mm; and a heat sink positioned on the second surface of the substrate of the LED or FET semiconductor device.
The semiconductor device of claim 1, wherein the hBN layer is formed on the first surface of the substrate of the LED or FET semiconductor device, the hBN layer formed on the first surface being formed between the first surface of the substrate of the LED or FET semiconductor device and the semiconductor layer.
The semiconductor device of claim 1, wherein the hBN layer is formed on the second surface of the substrate of the LED or FET semiconductor device, the hBN layer formed on the second surface being formed between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The semiconductor device of claim 1, wherein the hBN layer is formed on each of the first surface and the second surface of the substrate of the LED or FET semiconductor device, the hBN layer formed on the first surface being formed between the first surface of the substrate of the LED or FET semiconductor device and the semiconductor layer, and the hBN layer formed on the second surface being formed between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The semiconductor device of claim 1, wherein the hBN layer has one of a single layer structure and a multi-layer structure.
The semiconductor device of claim 1, wherein the hBN layer comprises a plurality of hBN regions and a plurality of insulating regions positioned between the plurality of hBN regions, the plurality of hBN regions and the plurality of insulating regions being laterally disposed on a surface of the substrate of the LED or FET semiconductor device.
The semiconductor device of claim 1, wherein the semiconductor layer is an optoelectronic semiconductor made of a material comprising at least one selected from among atoms of Groups II, III, IV, and V.
The semiconductor device of claim 1, wherein the semiconductor layer is an optoelectronic semiconductor formed to have one of bulk, thin film, quantum well, nano wire, and quantum dot structures.
The semiconductor device of claim 1, wherein the hBN layer has one structure of a single crystalline structure and a polycrystalline structure.
The semiconductor device of claim 1, wherein the hBN layer is formed on the substrate of the LED or FET semiconductor device through a transfer method.
The semiconductor device of claim 1, wherein the heat sink is made of one material selected from among a metal and a ceramic-based material.
A method of manufacturing a light-emitting diode (LED) or field-effect transistor (FET) semiconductor device with a high heat dissipation property using hexagonal boron nitride (hBN), the method comprising: forming a semiconductor layer, using at least one material selected from a compound formed by bonding zinc to oxygen or selenide and a compound formed by bonding aluminum, gallium, or indium to nitrogen, arsenic or phosphorus on a first surface of a substrate of the LED or FET semiconductor device having the first surface and a second surface; forming an hBN layer having a 2-dimensional nanostruc-ture on at least one surface of the first surface and the second surface of the substrate of the LED or FET semiconductor device, the hBN layer having a thick-ness of 10 Å to 200 nm; and attaching a heat sink to the second surface of the substrate of the LED or FET semiconductor device.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed between the first B₂ surface of the substrate of the LED or FET semiconductor device and the semiconductor layer.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed between the first surface of the substrate of the LED or FET semiconductor device and the semiconductor layer and between the second surface of the substrate of the LED or FET semiconductor device and the heat sink.
The method of claim 12, wherein, in the forming of the hBN layer, a plurality of hBN regions are formed to be laterally disposed on a surface of the substrate of the LED or FET semiconductor device with insulating regions interposed therebetween.
The method of claim 12, wherein, in the forming of the hBN layer, the hBN layer is formed on the substrate of the LED or FET semiconductor device through a transfer method. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Two types of LED element packages were manufactured to verify effects of the invention. Blue LED devices with hBN layers transferred to thicknesses of 10 nm, 20 nm, or 30 nm on the rear surface of the substrate were attached to glass without a heat sink and connected to electrodes through bonding wires (FIG. 7). A second configuration connected blue LED devices with hBN layers to electrodes (FIG. 8).
Layer stacks claimed or described, ordered top of device to substrate.
LED or FET semiconductor device with hBN heat dissipation layer
Materials described outside the worked examples.
optoelectronic semiconductor layer material
zinc oxide
ZnO
zinc selenide
ZnSe
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
gallium nitride
GaN
indium aluminum gallium nitride
InAlGaN
indium gallium nitride
InGaN
indium nitride
InN
gallium arsenide
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
theoretical in-plane thermal conductivity of hBN | 2000 W/mK | hBN |
Temperature | 28–35 °C | — |
Thickness | 1–200 nm | — |
Thickness | 1–200000000 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Cited non-patent literature · 2
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