Patent
Atlas literature
Patent
US 11,515,407Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 5 F except that an insulator 520 is formed conformally on the GaN buffer stack 206D and the gate electrode 516 in contact with the source/drain regions …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit structure, comprising: a relaxed buffer stack that includes a channel region, wherein the relaxed buffer stack and the channel region include a group I II -N semiconductor material, wherein the relaxed buffer stack comprises a plurality of AlGaN material layers and a buffer stack over the plurality of AlGaN material layers, wherein the buffer stack comprises the group I II -N semiconductor material and has a thickness of less than approximately 25 nm; a back barrier in the relaxed buffer stack between the plurality of AlGaN material layers and the buffer stack, wherein the back barrier comprises an AlGaN material of approximately 2-10% Al; and a polarization stack over the relaxed buffer stack. Original
The integrated circuit structure of claim 1, wherein the back barrier is approximately 0.75-1.25 p m in thickness. Currently amended
The integrated circuit structure of claim 1, wherein the group I II-N semiconductor material comprises GaN. Original
The integrated circuit structure of claim 1, wherein the relaxed buffer stack further comprises a bottom material layer of aluminum and nitrogen, and the plurality of AlGaN material layers are over the bottom material layer. Original
The integrated circuit structure of claim 1, wherein the plurality of AlGaN material layers each have a thickness less than approximately 250 nm and have a decreasing Attorney Docket No. AB₄₉₅₄-US 111548-243309 Examiner: Geyer, Scott B. Original
The integrated circuit structure of claim 1, further comprising both an n-type device and a p-type device n the relaxed buffer stack, wherein the n-type device comprises the buffer stack on the relaxed buffer stack and the polarization stack on the buffer stack; and the p-type device comprises the buffer stack on the relaxed buffer stack. Currently amended
The integrated circuit structure of claim 1, wherein the channel region comprises one of an enhancement mode device and a depletion mode device. Original
The integrated circuit structure of claim 1, further comprising a cap layer over the polarization stack. Original
The transistor of claim 1 4, wherein the channel region comprises one of an enhancement mode device and a depletion mode device. Original
The transistor of claim 1 4, further comprising a cap layer over the polarization stack. Original
A transistor, comprising: a relaxed buffer stack that includes a channel region, wherein the relaxed buffer stack and the channel region comprise G aN, wherein the relaxed buffer stack comprises: a bottom material layer, a plurality of AlGaN material layers over the bottom material layer, and a buffer stack over the plurality of AlGaN material layers, wherein the buffer stack comprises G aN and has a thickness of less than approximately 25 nm; a back barrier in the relaxed buffer stack between the plurality of AlGaN material layers and the buffer stack, wherein the back barrier comprises an AlGaN material of approximately 2- 10% Al; a polarization stack over the relaxed buffer stack; and source and drain regions adjacent to the channel region. Original
The transistor of claim 14, wherein the back barrier is approximately 0.75-1.25 p m in thickness. Currently amended
The transistor of claim 14, wherein the plurality of AlGaN material layers each have a thickness less than approximately 250 nm and have a decreasing percentage of Al from a bottom one of the plurality of AlGaN material layers to a top one of the plurality of AlGaN material layers. Original
The transistor of claim 14, further comprising both an n-type device and a p-type device on the relaxed buffer stack, wherein the n-type device comprises the buffer stack on the relaxed buffer stack and the polarization stack on the buffer stack; and the p- type device comprises + the buffer stack on the relaxed buffer stack. Currently amended
Canceled
Attorney Docket No. AB₄₉₅₄-US 111548-243309 Examiner: Geyer, Scott B. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
integrated circuit structure (GaN-based HEMT/MOS)
Materials described outside the worked examples.
group III-N semiconductor material (channel/buffer)
AlGaN (plurality of material layers in relaxed buffer stack)
AlGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | approximately 145-105 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,515,407Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 5 F except that an insulator 520 is formed conformally on the GaN buffer stack 206D and the gate electrode 516 in contact with the source/drain regions …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit structure, comprising: a relaxed buffer stack that includes a channel region, wherein the relaxed buffer stack and the channel region include a group I II -N semiconductor material, wherein the relaxed buffer stack comprises a plurality of AlGaN material layers and a buffer stack over the plurality of AlGaN material layers, wherein the buffer stack comprises the group I II -N semiconductor material and has a thickness of less than approximately 25 nm; a back barrier in the relaxed buffer stack between the plurality of AlGaN material layers and the buffer stack, wherein the back barrier comprises an AlGaN material of approximately 2-10% Al; and a polarization stack over the relaxed buffer stack. Original
The integrated circuit structure of claim 1, wherein the back barrier is approximately 0.75-1.25 p m in thickness. Currently amended
The integrated circuit structure of claim 1, wherein the group I II-N semiconductor material comprises GaN. Original
The integrated circuit structure of claim 1, wherein the relaxed buffer stack further comprises a bottom material layer of aluminum and nitrogen, and the plurality of AlGaN material layers are over the bottom material layer. Original
The integrated circuit structure of claim 1, wherein the plurality of AlGaN material layers each have a thickness less than approximately 250 nm and have a decreasing Attorney Docket No. AB₄₉₅₄-US 111548-243309 Examiner: Geyer, Scott B. Original
The integrated circuit structure of claim 1, further comprising both an n-type device and a p-type device n the relaxed buffer stack, wherein the n-type device comprises the buffer stack on the relaxed buffer stack and the polarization stack on the buffer stack; and the p-type device comprises the buffer stack on the relaxed buffer stack. Currently amended
The integrated circuit structure of claim 1, wherein the channel region comprises one of an enhancement mode device and a depletion mode device. Original
The integrated circuit structure of claim 1, further comprising a cap layer over the polarization stack. Original
The transistor of claim 1 4, wherein the channel region comprises one of an enhancement mode device and a depletion mode device. Original
The transistor of claim 1 4, further comprising a cap layer over the polarization stack. Original
A transistor, comprising: a relaxed buffer stack that includes a channel region, wherein the relaxed buffer stack and the channel region comprise G aN, wherein the relaxed buffer stack comprises: a bottom material layer, a plurality of AlGaN material layers over the bottom material layer, and a buffer stack over the plurality of AlGaN material layers, wherein the buffer stack comprises G aN and has a thickness of less than approximately 25 nm; a back barrier in the relaxed buffer stack between the plurality of AlGaN material layers and the buffer stack, wherein the back barrier comprises an AlGaN material of approximately 2- 10% Al; a polarization stack over the relaxed buffer stack; and source and drain regions adjacent to the channel region. Original
The transistor of claim 14, wherein the back barrier is approximately 0.75-1.25 p m in thickness. Currently amended
The transistor of claim 14, wherein the plurality of AlGaN material layers each have a thickness less than approximately 250 nm and have a decreasing percentage of Al from a bottom one of the plurality of AlGaN material layers to a top one of the plurality of AlGaN material layers. Original
The transistor of claim 14, further comprising both an n-type device and a p-type device on the relaxed buffer stack, wherein the n-type device comprises the buffer stack on the relaxed buffer stack and the polarization stack on the buffer stack; and the p- type device comprises + the buffer stack on the relaxed buffer stack. Currently amended
Canceled
Attorney Docket No. AB₄₉₅₄-US 111548-243309 Examiner: Geyer, Scott B. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
integrated circuit structure (GaN-based HEMT/MOS)
Materials described outside the worked examples.
group III-N semiconductor material (channel/buffer)
AlGaN (plurality of material layers in relaxed buffer stack)
AlGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | approximately 145-105 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,515,407Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 5 F except that an insulator 520 is formed conformally on the GaN buffer stack 206D and the gate electrode 516 in contact with the source/drain regions …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit structure, comprising: a relaxed buffer stack that includes a channel region, wherein the relaxed buffer stack and the channel region include a group I II -N semiconductor material, wherein the relaxed buffer stack comprises a plurality of AlGaN material layers and a buffer stack over the plurality of AlGaN material layers, wherein the buffer stack comprises the group I II -N semiconductor material and has a thickness of less than approximately 25 nm; a back barrier in the relaxed buffer stack between the plurality of AlGaN material layers and the buffer stack, wherein the back barrier comprises an AlGaN material of approximately 2-10% Al; and a polarization stack over the relaxed buffer stack. Original
The integrated circuit structure of claim 1, wherein the back barrier is approximately 0.75-1.25 p m in thickness. Currently amended
The integrated circuit structure of claim 1, wherein the group I II-N semiconductor material comprises GaN. Original
The integrated circuit structure of claim 1, wherein the relaxed buffer stack further comprises a bottom material layer of aluminum and nitrogen, and the plurality of AlGaN material layers are over the bottom material layer. Original
The integrated circuit structure of claim 1, wherein the plurality of AlGaN material layers each have a thickness less than approximately 250 nm and have a decreasing Attorney Docket No. AB₄₉₅₄-US 111548-243309 Examiner: Geyer, Scott B. Original
The integrated circuit structure of claim 1, further comprising both an n-type device and a p-type device n the relaxed buffer stack, wherein the n-type device comprises the buffer stack on the relaxed buffer stack and the polarization stack on the buffer stack; and the p-type device comprises the buffer stack on the relaxed buffer stack. Currently amended
The integrated circuit structure of claim 1, wherein the channel region comprises one of an enhancement mode device and a depletion mode device. Original
The integrated circuit structure of claim 1, further comprising a cap layer over the polarization stack. Original
The transistor of claim 1 4, wherein the channel region comprises one of an enhancement mode device and a depletion mode device. Original
The transistor of claim 1 4, further comprising a cap layer over the polarization stack. Original
A transistor, comprising: a relaxed buffer stack that includes a channel region, wherein the relaxed buffer stack and the channel region comprise G aN, wherein the relaxed buffer stack comprises: a bottom material layer, a plurality of AlGaN material layers over the bottom material layer, and a buffer stack over the plurality of AlGaN material layers, wherein the buffer stack comprises G aN and has a thickness of less than approximately 25 nm; a back barrier in the relaxed buffer stack between the plurality of AlGaN material layers and the buffer stack, wherein the back barrier comprises an AlGaN material of approximately 2- 10% Al; a polarization stack over the relaxed buffer stack; and source and drain regions adjacent to the channel region. Original
The transistor of claim 14, wherein the back barrier is approximately 0.75-1.25 p m in thickness. Currently amended
The transistor of claim 14, wherein the plurality of AlGaN material layers each have a thickness less than approximately 250 nm and have a decreasing percentage of Al from a bottom one of the plurality of AlGaN material layers to a top one of the plurality of AlGaN material layers. Original
The transistor of claim 14, further comprising both an n-type device and a p-type device on the relaxed buffer stack, wherein the n-type device comprises the buffer stack on the relaxed buffer stack and the polarization stack on the buffer stack; and the p- type device comprises + the buffer stack on the relaxed buffer stack. Currently amended
Canceled
Attorney Docket No. AB₄₉₅₄-US 111548-243309 Examiner: Geyer, Scott B. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
integrated circuit structure (GaN-based HEMT/MOS)
Materials described outside the worked examples.
group III-N semiconductor material (channel/buffer)
AlGaN (plurality of material layers in relaxed buffer stack)
AlGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | approximately 145-105 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,515,407Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 5 F except that an insulator 520 is formed conformally on the GaN buffer stack 206D and the gate electrode 516 in contact with the source/drain regions …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit structure, comprising: a relaxed buffer stack that includes a channel region, wherein the relaxed buffer stack and the channel region include a group I II -N semiconductor material, wherein the relaxed buffer stack comprises a plurality of AlGaN material layers and a buffer stack over the plurality of AlGaN material layers, wherein the buffer stack comprises the group I II -N semiconductor material and has a thickness of less than approximately 25 nm; a back barrier in the relaxed buffer stack between the plurality of AlGaN material layers and the buffer stack, wherein the back barrier comprises an AlGaN material of approximately 2-10% Al; and a polarization stack over the relaxed buffer stack. Original
The integrated circuit structure of claim 1, wherein the back barrier is approximately 0.75-1.25 p m in thickness. Currently amended
The integrated circuit structure of claim 1, wherein the group I II-N semiconductor material comprises GaN. Original
The integrated circuit structure of claim 1, wherein the relaxed buffer stack further comprises a bottom material layer of aluminum and nitrogen, and the plurality of AlGaN material layers are over the bottom material layer. Original
The integrated circuit structure of claim 1, wherein the plurality of AlGaN material layers each have a thickness less than approximately 250 nm and have a decreasing Attorney Docket No. AB₄₉₅₄-US 111548-243309 Examiner: Geyer, Scott B. Original
The integrated circuit structure of claim 1, further comprising both an n-type device and a p-type device n the relaxed buffer stack, wherein the n-type device comprises the buffer stack on the relaxed buffer stack and the polarization stack on the buffer stack; and the p-type device comprises the buffer stack on the relaxed buffer stack. Currently amended
The integrated circuit structure of claim 1, wherein the channel region comprises one of an enhancement mode device and a depletion mode device. Original
The integrated circuit structure of claim 1, further comprising a cap layer over the polarization stack. Original
The transistor of claim 1 4, wherein the channel region comprises one of an enhancement mode device and a depletion mode device. Original
The transistor of claim 1 4, further comprising a cap layer over the polarization stack. Original
A transistor, comprising: a relaxed buffer stack that includes a channel region, wherein the relaxed buffer stack and the channel region comprise G aN, wherein the relaxed buffer stack comprises: a bottom material layer, a plurality of AlGaN material layers over the bottom material layer, and a buffer stack over the plurality of AlGaN material layers, wherein the buffer stack comprises G aN and has a thickness of less than approximately 25 nm; a back barrier in the relaxed buffer stack between the plurality of AlGaN material layers and the buffer stack, wherein the back barrier comprises an AlGaN material of approximately 2- 10% Al; a polarization stack over the relaxed buffer stack; and source and drain regions adjacent to the channel region. Original
The transistor of claim 14, wherein the back barrier is approximately 0.75-1.25 p m in thickness. Currently amended
The transistor of claim 14, wherein the plurality of AlGaN material layers each have a thickness less than approximately 250 nm and have a decreasing percentage of Al from a bottom one of the plurality of AlGaN material layers to a top one of the plurality of AlGaN material layers. Original
The transistor of claim 14, further comprising both an n-type device and a p-type device on the relaxed buffer stack, wherein the n-type device comprises the buffer stack on the relaxed buffer stack and the polarization stack on the buffer stack; and the p- type device comprises + the buffer stack on the relaxed buffer stack. Currently amended
Canceled
Attorney Docket No. AB₄₉₅₄-US 111548-243309 Examiner: Geyer, Scott B. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
integrated circuit structure (GaN-based HEMT/MOS)
Materials described outside the worked examples.
group III-N semiconductor material (channel/buffer)
AlGaN (plurality of material layers in relaxed buffer stack)
AlGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | approximately 145-105 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
n-type device (HEMT, 2DEG)
p-type device (2DHG)
transistor (GaN HEMT)
GaN MOS-HEMT (prior art reference, Figure 1)
GaN
AlN (bottom material layer)
AlN
SiNx
SiO₂
BN
AlInGaN polarization layer
AlInGaN
| — |
Thickness | 175–225 nm | — |
Thickness | 1–20 nm | — |
Thickness | 0.75–1.25 um | — |
Thickness | ≤ 25 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 250 nm | — |
n-type device (HEMT, 2DEG)
p-type device (2DHG)
transistor (GaN HEMT)
GaN MOS-HEMT (prior art reference, Figure 1)
GaN
AlN (bottom material layer)
AlN
SiNx
SiO₂
BN
AlInGaN polarization layer
AlInGaN
| — |
Thickness | 175–225 nm | — |
Thickness | 1–20 nm | — |
Thickness | 0.75–1.25 um | — |
Thickness | ≤ 25 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 250 nm | — |
n-type device (HEMT, 2DEG)
p-type device (2DHG)
transistor (GaN HEMT)
GaN MOS-HEMT (prior art reference, Figure 1)
GaN
AlN (bottom material layer)
AlN
SiNx
SiO₂
BN
AlInGaN polarization layer
AlInGaN
| — |
Thickness | 175–225 nm | — |
Thickness | 1–20 nm | — |
Thickness | 0.75–1.25 um | — |
Thickness | ≤ 25 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 250 nm | — |
n-type device (HEMT, 2DEG)
p-type device (2DHG)
transistor (GaN HEMT)
GaN MOS-HEMT (prior art reference, Figure 1)
GaN
AlN (bottom material layer)
AlN
SiNx
SiO₂
BN
AlInGaN polarization layer
AlInGaN
| — |
Thickness | 175–225 nm | — |
Thickness | 1–20 nm | — |
Thickness | 0.75–1.25 um | — |
Thickness | ≤ 25 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 250 nm | — |
