Patent
US 10,784,336GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR AND GATE STRUCTURE THEREOF
Chu-Kuang Liu
US
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Atlas literature
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US 10,784,336Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B, the undoped gallium nitride layer 110 completely covers the doped gallium nitride layer 106, wherein the thickness t of the undoped gallium nitride …
FIG. 2 is a cross-sectional view showing a gate structure of a gallium nitride HEMT according to a second embodiment of the present disclosure. [0022]
FIG. 3 is a schematic cross-sectional view of a gallium nitride HEMT including the gate structure of FIG. IA.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gate structure of a gallium nitride high electron mobility transistor (HEMT), comprising: a heterogeneous structure, comprising a channel layer and a barrier layer disposed on the channel layer; a doped gallium nitride layer, disposed on the barrier layer; an insulating layer, disposed on both sides of a top portion of the doped gallium nitride layer; an undoped gallium nitride layer, disposed between the doped gallium nitride layer and the insulating layer; and a gate metal layer, disposed on the doped gallium nitride layer and covering the insulating layer and the undoped gallium nitride layer, and the gate metal layer is in direct contact with the doped gallium nitride layer. Currently amended
The gate structure of the gallium nitride HEMT according to claim 1, wherein the undoped gallium nitride layer covers a portion of the doped gallium nitride layer ed-. Currently amended
The gate structure of the gallium nitride HEMT according to claim 1, wherein the doped gallium nitride layer is a p-type gallium nitride layer or an n-type gallium nitride layer. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a material of the insulating layer comprises silicon nitride, aluminum oxide, silicon oxide, boron nitride or aluminum nitride. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a ratio of an area of the insulating layer to an area of the top portion of the doped gallium nitride layer is 50 % or less. Original
The gate structure of the gallium nitride HEMT according to claim 1, wher e in an area of a bottom portion of the doped gallium nitride layer is greater than or equal to an area of the top portion. Original
8. The gate structure of the gallium nitride H EMT according to claim 1, wherein the undoped gallium nitride layer has a thickness of less than 200 angstroms. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a side surface of the gate metal layer is aligned with a side surface of the insulating layer. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a material of the channel layer comprises gallium nitride, and a material of the barrier layer comprises aluminum gallium nitride. Original
A gallium nitride HEMT, comprising the gate structure according to claim 1. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
gate structure of gallium nitride HEMT
Materials described outside the worked examples.
heterogeneous structure
doped gallium nitride layer
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1B, the undoped gallium nitride layer 110 completely covers the doped gallium nitride layer 106, wherein the thickness t of the undoped gallium nitride …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 200 Å | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,784,336Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B, the undoped gallium nitride layer 110 completely covers the doped gallium nitride layer 106, wherein the thickness t of the undoped gallium nitride …
FIG. 2 is a cross-sectional view showing a gate structure of a gallium nitride HEMT according to a second embodiment of the present disclosure. [0022]
FIG. 3 is a schematic cross-sectional view of a gallium nitride HEMT including the gate structure of FIG. IA.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gate structure of a gallium nitride high electron mobility transistor (HEMT), comprising: a heterogeneous structure, comprising a channel layer and a barrier layer disposed on the channel layer; a doped gallium nitride layer, disposed on the barrier layer; an insulating layer, disposed on both sides of a top portion of the doped gallium nitride layer; an undoped gallium nitride layer, disposed between the doped gallium nitride layer and the insulating layer; and a gate metal layer, disposed on the doped gallium nitride layer and covering the insulating layer and the undoped gallium nitride layer, and the gate metal layer is in direct contact with the doped gallium nitride layer. Currently amended
The gate structure of the gallium nitride HEMT according to claim 1, wherein the undoped gallium nitride layer covers a portion of the doped gallium nitride layer ed-. Currently amended
The gate structure of the gallium nitride HEMT according to claim 1, wherein the doped gallium nitride layer is a p-type gallium nitride layer or an n-type gallium nitride layer. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a material of the insulating layer comprises silicon nitride, aluminum oxide, silicon oxide, boron nitride or aluminum nitride. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a ratio of an area of the insulating layer to an area of the top portion of the doped gallium nitride layer is 50 % or less. Original
The gate structure of the gallium nitride HEMT according to claim 1, wher e in an area of a bottom portion of the doped gallium nitride layer is greater than or equal to an area of the top portion. Original
8. The gate structure of the gallium nitride H EMT according to claim 1, wherein the undoped gallium nitride layer has a thickness of less than 200 angstroms. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a side surface of the gate metal layer is aligned with a side surface of the insulating layer. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a material of the channel layer comprises gallium nitride, and a material of the barrier layer comprises aluminum gallium nitride. Original
A gallium nitride HEMT, comprising the gate structure according to claim 1. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
gate structure of gallium nitride HEMT
Materials described outside the worked examples.
heterogeneous structure
doped gallium nitride layer
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1B, the undoped gallium nitride layer 110 completely covers the doped gallium nitride layer 106, wherein the thickness t of the undoped gallium nitride …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 200 Å | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,784,336Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B, the undoped gallium nitride layer 110 completely covers the doped gallium nitride layer 106, wherein the thickness t of the undoped gallium nitride …
FIG. 2 is a cross-sectional view showing a gate structure of a gallium nitride HEMT according to a second embodiment of the present disclosure. [0022]
FIG. 3 is a schematic cross-sectional view of a gallium nitride HEMT including the gate structure of FIG. IA.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gate structure of a gallium nitride high electron mobility transistor (HEMT), comprising: a heterogeneous structure, comprising a channel layer and a barrier layer disposed on the channel layer; a doped gallium nitride layer, disposed on the barrier layer; an insulating layer, disposed on both sides of a top portion of the doped gallium nitride layer; an undoped gallium nitride layer, disposed between the doped gallium nitride layer and the insulating layer; and a gate metal layer, disposed on the doped gallium nitride layer and covering the insulating layer and the undoped gallium nitride layer, and the gate metal layer is in direct contact with the doped gallium nitride layer. Currently amended
The gate structure of the gallium nitride HEMT according to claim 1, wherein the undoped gallium nitride layer covers a portion of the doped gallium nitride layer ed-. Currently amended
The gate structure of the gallium nitride HEMT according to claim 1, wherein the doped gallium nitride layer is a p-type gallium nitride layer or an n-type gallium nitride layer. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a material of the insulating layer comprises silicon nitride, aluminum oxide, silicon oxide, boron nitride or aluminum nitride. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a ratio of an area of the insulating layer to an area of the top portion of the doped gallium nitride layer is 50 % or less. Original
The gate structure of the gallium nitride HEMT according to claim 1, wher e in an area of a bottom portion of the doped gallium nitride layer is greater than or equal to an area of the top portion. Original
8. The gate structure of the gallium nitride H EMT according to claim 1, wherein the undoped gallium nitride layer has a thickness of less than 200 angstroms. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a side surface of the gate metal layer is aligned with a side surface of the insulating layer. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a material of the channel layer comprises gallium nitride, and a material of the barrier layer comprises aluminum gallium nitride. Original
A gallium nitride HEMT, comprising the gate structure according to claim 1. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
gate structure of gallium nitride HEMT
Materials described outside the worked examples.
heterogeneous structure
doped gallium nitride layer
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1B, the undoped gallium nitride layer 110 completely covers the doped gallium nitride layer 106, wherein the thickness t of the undoped gallium nitride …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 200 Å | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,784,336Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B, the undoped gallium nitride layer 110 completely covers the doped gallium nitride layer 106, wherein the thickness t of the undoped gallium nitride …
FIG. 2 is a cross-sectional view showing a gate structure of a gallium nitride HEMT according to a second embodiment of the present disclosure. [0022]
FIG. 3 is a schematic cross-sectional view of a gallium nitride HEMT including the gate structure of FIG. IA.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gate structure of a gallium nitride high electron mobility transistor (HEMT), comprising: a heterogeneous structure, comprising a channel layer and a barrier layer disposed on the channel layer; a doped gallium nitride layer, disposed on the barrier layer; an insulating layer, disposed on both sides of a top portion of the doped gallium nitride layer; an undoped gallium nitride layer, disposed between the doped gallium nitride layer and the insulating layer; and a gate metal layer, disposed on the doped gallium nitride layer and covering the insulating layer and the undoped gallium nitride layer, and the gate metal layer is in direct contact with the doped gallium nitride layer. Currently amended
The gate structure of the gallium nitride HEMT according to claim 1, wherein the undoped gallium nitride layer covers a portion of the doped gallium nitride layer ed-. Currently amended
The gate structure of the gallium nitride HEMT according to claim 1, wherein the doped gallium nitride layer is a p-type gallium nitride layer or an n-type gallium nitride layer. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a material of the insulating layer comprises silicon nitride, aluminum oxide, silicon oxide, boron nitride or aluminum nitride. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a ratio of an area of the insulating layer to an area of the top portion of the doped gallium nitride layer is 50 % or less. Original
The gate structure of the gallium nitride HEMT according to claim 1, wher e in an area of a bottom portion of the doped gallium nitride layer is greater than or equal to an area of the top portion. Original
8. The gate structure of the gallium nitride H EMT according to claim 1, wherein the undoped gallium nitride layer has a thickness of less than 200 angstroms. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a side surface of the gate metal layer is aligned with a side surface of the insulating layer. Original
The gate structure of the gallium nitride HEMT according to claim 1, wherein a material of the channel layer comprises gallium nitride, and a material of the barrier layer comprises aluminum gallium nitride. Original
A gallium nitride HEMT, comprising the gate structure according to claim 1. Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
gate structure of gallium nitride HEMT
Materials described outside the worked examples.
heterogeneous structure
doped gallium nitride layer
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1B, the undoped gallium nitride layer 110 completely covers the doped gallium nitride layer 106, wherein the thickness t of the undoped gallium nitride …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 200 Å | — |
Related documents with shared materials, methods, properties, or citations.
gallium nitride HEMT
gate metal layer
silicon nitride
Si₃N₄
aluminum oxide
Al₂O₃
silicon oxide
SiO₂
boron nitride
BN
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
passivation layer
gallium nitride HEMT
gate metal layer
silicon nitride
Si₃N₄
aluminum oxide
Al₂O₃
silicon oxide
SiO₂
boron nitride
BN
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
passivation layer
gallium nitride HEMT
gate metal layer
silicon nitride
Si₃N₄
aluminum oxide
Al₂O₃
silicon oxide
SiO₂
boron nitride
BN
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
passivation layer
gallium nitride HEMT
gate metal layer
silicon nitride
Si₃N₄
aluminum oxide
Al₂O₃
silicon oxide
SiO₂
boron nitride
BN
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
passivation layer