Patent
US 10,050,177"GaN BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING
Goshi Biwa
US
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Patent
Atlas literature
Patent
US 10,050,177Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a first semiconductor layer having a Ga component of an n-conductivity type; an active layer; a second semiconductor layer having a Ga component of a p-conductivity type; and an underlying layer composed of a GaN based compound semiconductor including In and disposed between the first GaN based compound semiconductor layer and the active layer, the In content of the underlying layer is less than an In content of the active layer, wherein the active layer is located between the first and the second semiconductor layers.
The semiconductor device according to claim 1, wherein the first semiconductor layer includes a GaN based compound semiconductor layer.
The semiconductor device according to claim 1, wherein the second semiconductor layer includes a GaN based compound semiconductor layer.
The semiconductor device according to claim 1, further comprising: a lower spacer layer composed of an undoped GaN based compound semiconductor, the lower spacer layer having a thickness of 50 nm or less and being disposed between the active -2- Appln No.: 14/628,498 Response to Final Office Action dated layer and the underlying layer, and a distance between the underlying layer and the active layer is 50 nm or less.
The semiconductor device according to claim 1, further comprising: a superlattice layer composed of a GaN based compound semiconductor doped with a p- type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer, the superlattice layer having a structure in which a plurality of a first type of GaN based layers are stacked periodically and alternately with a plurality of a second type of GaN based layers.
The semiconductor device according to claim 1, further comprising: an upper spacer layer composed of an undoped GaN based compound semiconductor, the upper spacer layer being disposed between the active layer and the superlattice layer, the upper spacer layer configured to prevent a dopant of the second GaN based compound semiconductor layer from diffusing to the active layer, wherein the upper spacer layer has a thickness of 100 nm or less.
The semiconductor device according to claim 1, wherein the superlattice layer has a p-type doping concentration ranging from 1 x 10 18/cm 3 to 4 x 10 20/cm 3.
The semiconductor device according to claim 1, further comprising: a lower spacer layer having a thickness of 20 nm or less and positioned between the first semiconductor layer and the active layer.
Claims 4 -5. canceled
The semiconductor device according to claim 4claim 1, wherein the underlying layer has a thickness of 20 nm or more, and wherein the underlying layer is composed of a single composition, and does not absorb light at an emission wavelength of the active layer.
The semiconductor device according to claim 4claim 1, wherein the underlying layer contains an n-type dopant and has an n-type doping concentration ranging from 1 x 10 16/cm 3 to 1 x 2 1/cm 3. -3- Appln No.: 14/628,498 Response to Final Office Action dated
The semiconductor device according to claim 4claim 1, wherein the underlying layer has a thickness of 50 nm or more.
The semiconductor device according to claim 4claim 1, wherein the underlying layer is Si-doped. -4-
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN based semiconductor light-emitting device
Materials described outside the worked examples.
active layer (GaN based compound semiconductor including In)
first GaN based compound semiconductor layer (n-type)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
emission wavelength blue range | 430–480 | active layer (GaN based compound semiconductor including In) |
emission wavelength green range | 500–550 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,050,177Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a first semiconductor layer having a Ga component of an n-conductivity type; an active layer; a second semiconductor layer having a Ga component of a p-conductivity type; and an underlying layer composed of a GaN based compound semiconductor including In and disposed between the first GaN based compound semiconductor layer and the active layer, the In content of the underlying layer is less than an In content of the active layer, wherein the active layer is located between the first and the second semiconductor layers.
The semiconductor device according to claim 1, wherein the first semiconductor layer includes a GaN based compound semiconductor layer.
The semiconductor device according to claim 1, wherein the second semiconductor layer includes a GaN based compound semiconductor layer.
The semiconductor device according to claim 1, further comprising: a lower spacer layer composed of an undoped GaN based compound semiconductor, the lower spacer layer having a thickness of 50 nm or less and being disposed between the active -2- Appln No.: 14/628,498 Response to Final Office Action dated layer and the underlying layer, and a distance between the underlying layer and the active layer is 50 nm or less.
The semiconductor device according to claim 1, further comprising: a superlattice layer composed of a GaN based compound semiconductor doped with a p- type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer, the superlattice layer having a structure in which a plurality of a first type of GaN based layers are stacked periodically and alternately with a plurality of a second type of GaN based layers.
The semiconductor device according to claim 1, further comprising: an upper spacer layer composed of an undoped GaN based compound semiconductor, the upper spacer layer being disposed between the active layer and the superlattice layer, the upper spacer layer configured to prevent a dopant of the second GaN based compound semiconductor layer from diffusing to the active layer, wherein the upper spacer layer has a thickness of 100 nm or less.
The semiconductor device according to claim 1, wherein the superlattice layer has a p-type doping concentration ranging from 1 x 10 18/cm 3 to 4 x 10 20/cm 3.
The semiconductor device according to claim 1, further comprising: a lower spacer layer having a thickness of 20 nm or less and positioned between the first semiconductor layer and the active layer.
Claims 4 -5. canceled
The semiconductor device according to claim 4claim 1, wherein the underlying layer has a thickness of 20 nm or more, and wherein the underlying layer is composed of a single composition, and does not absorb light at an emission wavelength of the active layer.
The semiconductor device according to claim 4claim 1, wherein the underlying layer contains an n-type dopant and has an n-type doping concentration ranging from 1 x 10 16/cm 3 to 1 x 2 1/cm 3. -3- Appln No.: 14/628,498 Response to Final Office Action dated
The semiconductor device according to claim 4claim 1, wherein the underlying layer has a thickness of 50 nm or more.
The semiconductor device according to claim 4claim 1, wherein the underlying layer is Si-doped. -4-
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN based semiconductor light-emitting device
Materials described outside the worked examples.
active layer (GaN based compound semiconductor including In)
first GaN based compound semiconductor layer (n-type)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
emission wavelength blue range | 430–480 | active layer (GaN based compound semiconductor including In) |
emission wavelength green range | 500–550 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,050,177Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a first semiconductor layer having a Ga component of an n-conductivity type; an active layer; a second semiconductor layer having a Ga component of a p-conductivity type; and an underlying layer composed of a GaN based compound semiconductor including In and disposed between the first GaN based compound semiconductor layer and the active layer, the In content of the underlying layer is less than an In content of the active layer, wherein the active layer is located between the first and the second semiconductor layers.
The semiconductor device according to claim 1, wherein the first semiconductor layer includes a GaN based compound semiconductor layer.
The semiconductor device according to claim 1, wherein the second semiconductor layer includes a GaN based compound semiconductor layer.
The semiconductor device according to claim 1, further comprising: a lower spacer layer composed of an undoped GaN based compound semiconductor, the lower spacer layer having a thickness of 50 nm or less and being disposed between the active -2- Appln No.: 14/628,498 Response to Final Office Action dated layer and the underlying layer, and a distance between the underlying layer and the active layer is 50 nm or less.
The semiconductor device according to claim 1, further comprising: a superlattice layer composed of a GaN based compound semiconductor doped with a p- type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer, the superlattice layer having a structure in which a plurality of a first type of GaN based layers are stacked periodically and alternately with a plurality of a second type of GaN based layers.
The semiconductor device according to claim 1, further comprising: an upper spacer layer composed of an undoped GaN based compound semiconductor, the upper spacer layer being disposed between the active layer and the superlattice layer, the upper spacer layer configured to prevent a dopant of the second GaN based compound semiconductor layer from diffusing to the active layer, wherein the upper spacer layer has a thickness of 100 nm or less.
The semiconductor device according to claim 1, wherein the superlattice layer has a p-type doping concentration ranging from 1 x 10 18/cm 3 to 4 x 10 20/cm 3.
The semiconductor device according to claim 1, further comprising: a lower spacer layer having a thickness of 20 nm or less and positioned between the first semiconductor layer and the active layer.
Claims 4 -5. canceled
The semiconductor device according to claim 4claim 1, wherein the underlying layer has a thickness of 20 nm or more, and wherein the underlying layer is composed of a single composition, and does not absorb light at an emission wavelength of the active layer.
The semiconductor device according to claim 4claim 1, wherein the underlying layer contains an n-type dopant and has an n-type doping concentration ranging from 1 x 10 16/cm 3 to 1 x 2 1/cm 3. -3- Appln No.: 14/628,498 Response to Final Office Action dated
The semiconductor device according to claim 4claim 1, wherein the underlying layer has a thickness of 50 nm or more.
The semiconductor device according to claim 4claim 1, wherein the underlying layer is Si-doped. -4-
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN based semiconductor light-emitting device
Materials described outside the worked examples.
active layer (GaN based compound semiconductor including In)
first GaN based compound semiconductor layer (n-type)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
emission wavelength blue range | 430–480 | active layer (GaN based compound semiconductor including In) |
emission wavelength green range | 500–550 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,050,177Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a first semiconductor layer having a Ga component of an n-conductivity type; an active layer; a second semiconductor layer having a Ga component of a p-conductivity type; and an underlying layer composed of a GaN based compound semiconductor including In and disposed between the first GaN based compound semiconductor layer and the active layer, the In content of the underlying layer is less than an In content of the active layer, wherein the active layer is located between the first and the second semiconductor layers.
The semiconductor device according to claim 1, wherein the first semiconductor layer includes a GaN based compound semiconductor layer.
The semiconductor device according to claim 1, wherein the second semiconductor layer includes a GaN based compound semiconductor layer.
The semiconductor device according to claim 1, further comprising: a lower spacer layer composed of an undoped GaN based compound semiconductor, the lower spacer layer having a thickness of 50 nm or less and being disposed between the active -2- Appln No.: 14/628,498 Response to Final Office Action dated layer and the underlying layer, and a distance between the underlying layer and the active layer is 50 nm or less.
The semiconductor device according to claim 1, further comprising: a superlattice layer composed of a GaN based compound semiconductor doped with a p- type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer, the superlattice layer having a structure in which a plurality of a first type of GaN based layers are stacked periodically and alternately with a plurality of a second type of GaN based layers.
The semiconductor device according to claim 1, further comprising: an upper spacer layer composed of an undoped GaN based compound semiconductor, the upper spacer layer being disposed between the active layer and the superlattice layer, the upper spacer layer configured to prevent a dopant of the second GaN based compound semiconductor layer from diffusing to the active layer, wherein the upper spacer layer has a thickness of 100 nm or less.
The semiconductor device according to claim 1, wherein the superlattice layer has a p-type doping concentration ranging from 1 x 10 18/cm 3 to 4 x 10 20/cm 3.
The semiconductor device according to claim 1, further comprising: a lower spacer layer having a thickness of 20 nm or less and positioned between the first semiconductor layer and the active layer.
Claims 4 -5. canceled
The semiconductor device according to claim 4claim 1, wherein the underlying layer has a thickness of 20 nm or more, and wherein the underlying layer is composed of a single composition, and does not absorb light at an emission wavelength of the active layer.
The semiconductor device according to claim 4claim 1, wherein the underlying layer contains an n-type dopant and has an n-type doping concentration ranging from 1 x 10 16/cm 3 to 1 x 2 1/cm 3. -3- Appln No.: 14/628,498 Response to Final Office Action dated
The semiconductor device according to claim 4claim 1, wherein the underlying layer has a thickness of 50 nm or more.
The semiconductor device according to claim 4claim 1, wherein the underlying layer is Si-doped. -4-
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN based semiconductor light-emitting device
Materials described outside the worked examples.
active layer (GaN based compound semiconductor including In)
first GaN based compound semiconductor layer (n-type)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
emission wavelength blue range | 430–480 | active layer (GaN based compound semiconductor including In) |
emission wavelength green range | 500–550 |
Related documents with shared materials, methods, properties, or citations.
second GaN based compound semiconductor layer (p-type)
underlying layer (GaN based compound semiconductor including In)
lower spacer layer (undoped GaN based compound semiconductor)
superlattice layer (p-type doped GaN based compound semiconductor)
upper spacer layer (undoped GaN based compound semiconductor)
InGaN underlying layer
InGaN
AlGaN sublayer (superlattice)
AlGaN
GaN sublayer (superlattice)
GaN
active layer (GaN based compound semiconductor including In) |
Thickness | 2–10 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | 0.0001 cm | — |
Thickness | 430–480 nm | — |
Thickness | 500–550 nm | — |
second GaN based compound semiconductor layer (p-type)
underlying layer (GaN based compound semiconductor including In)
lower spacer layer (undoped GaN based compound semiconductor)
superlattice layer (p-type doped GaN based compound semiconductor)
upper spacer layer (undoped GaN based compound semiconductor)
InGaN underlying layer
InGaN
AlGaN sublayer (superlattice)
AlGaN
GaN sublayer (superlattice)
GaN
active layer (GaN based compound semiconductor including In) |
Thickness | 2–10 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | 0.0001 cm | — |
Thickness | 430–480 nm | — |
Thickness | 500–550 nm | — |
second GaN based compound semiconductor layer (p-type)
underlying layer (GaN based compound semiconductor including In)
lower spacer layer (undoped GaN based compound semiconductor)
superlattice layer (p-type doped GaN based compound semiconductor)
upper spacer layer (undoped GaN based compound semiconductor)
InGaN underlying layer
InGaN
AlGaN sublayer (superlattice)
AlGaN
GaN sublayer (superlattice)
GaN
active layer (GaN based compound semiconductor including In) |
Thickness | 2–10 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | 0.0001 cm | — |
Thickness | 430–480 nm | — |
Thickness | 500–550 nm | — |
second GaN based compound semiconductor layer (p-type)
underlying layer (GaN based compound semiconductor including In)
lower spacer layer (undoped GaN based compound semiconductor)
superlattice layer (p-type doped GaN based compound semiconductor)
upper spacer layer (undoped GaN based compound semiconductor)
InGaN underlying layer
InGaN
AlGaN sublayer (superlattice)
AlGaN
GaN sublayer (superlattice)
GaN
active layer (GaN based compound semiconductor including In) |
Thickness | 2–10 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | 0.0001 cm | — |
Thickness | 430–480 nm | — |
Thickness | 500–550 nm | — |