A gallium nitride-based semiconductor laser diode comprising: a support base of a I II -nitride semiconductor, the support base having a semipolar primary surface, the semipolar primary surface tilting at an angle ALPHA with respect to a first reference plane, the first reference plane being perpendicular to a reference axis, the reference axis extending in a direction of a c-axis of the I II -nitride semiconductor; a first epitaxial semiconductor region comprising a first cladding layer and provided on the semipolar primary surface of the support base; a second epitaxial semiconductor region comprising a second cladding layer and provided on the semipolar primary surface of the support base; and a core semiconductor region provided on the semipolar primary surface of the support base, the core semiconductor region comprising a first optical guide layer, an active layer and a second optical guide layer, the active layer comprising an InxoGai-xoN layer, the active layer being provided so as to emit light at a lasing wavelength of not less than 500 nm, the first cladding layer comprising a gallium nitride-based semiconductor different from the III -nitride semiconductor, and material of the gallium nitride-based semiconductor being at least one of AlGaN and InA l GaN, the first epitaxial semiconductor region, the core semiconductor region and the second epitaxial semiconductor region being arranged in order in a direction of a normal axis normal to the semipolar primary surface of the support base, the c-axis being directed in a direction of either of <0001> axis and <000-1> axis, 2 Application No. 12/837,143 Docket No.: 87136-289285 Reply to Office Action of the angle ALPHA being in a range of not less than 10 degrees and less than 80 degrees, a thickness of the first epitaxial semiconductor region being larger than a thickness of the core semiconductor region, a density of misfit dislocations at an interface between the support base and the first epitaxial semiconductor region being not more than 1 x 106 cm -t, a density of misfit dislocations at an interface between the first epitaxial semiconductor region and the core semiconductor region being not more than 1 x 106 cm -t, a density of misfit dislocations at an interface between the core semiconductor region and the second epitaxial semiconductor region being not more than 1 x 106 cm -t, a conductivity type of the first cladding layer being opposite to that of the second cladding layer, the first optical guide layer being provided between the active layer and the first epitaxial semiconductor region, the first optical guide layer comprising a first Inx 1Gaix1 N layer and a first GaN layer, the second optical guide layer being provided between the active layer and the second epitaxial semiconductor region, and the second optical guide layer comprising a second In x 2Ga 1ix 2N layer and a second GaN layer, wherein a direction of the c-axis of the I II -nitride semiconductor and a magnitude of a lattice constant d O thereof in the direction of the c-axis are represented by a lattice vector L V CO, wherein a direction of a c-axis of a semiconductor material of the first cladding la v er in the first epitaxial semiconductor region and a magnitude of a lattice constant d l thereof in the direction of the c-axis are represented by a lattice vector L VC1, 3 Application No. 12/837,143 Docket No.: 87136-289285 Reply to Office Action of wherein the lattice vector L VCO is constituted by a l ongitudinal co m ponent V OL in the direction of the normal axis and a transverse component V OT perpendicular to the longitudinal component, wherein the lattice vector L VC 1 is constituted by a l ongitudinal co m ponent V i_ in the direction of the normal axis and a transverse component V IT perpendicular to the longitudinal component, and wherein a lattice mismatch de g ree (V 1T-VOT)/NOT in the transverse direction satisfies a lattice matching condition.

canceled

The gallium nitride-based semiconductor laser diode according to claim [[6]] 1, wherein a c-axis direction of a semiconductor material of the first Inx 1Gaix1 N layer in the first optical guide layer and a magnitude of a lattice constant d2 thereof in the direction of the c-axis are represented by a lattice vector LVC2, wherein the lattice vector LVC₂ is constituted by a longitudinal component V₂L in the direction of the normal axis and a transverse component V₂T perpendicular to the longitudinal component, and wherein a value of a lattice mismatch degree (V₂T -VOT)/VO T in the transverse direction is in a range satisfying a lattice matching condition.

A gallium nitride-based semiconductor laser diode comprising: a support base of a I II -nitride semiconductor, the support base having a semipolar primary surface, the semipolar primary surface tilting at an angle ALPHA with respect to a first reference plane, the first reference plane being perpendicular to a reference axis, the reference axis extending in a direction of a c-axis of the I II -nitride semiconductor; a first epitaxial semiconductor region comprising a first cladding layer and provided on the semipolar primary surface of the support base; a second epitaxial semiconductor region comprising a second cladding layer and provided on the semipolar primary surface of the support base; and a core semiconductor region provided on the semipolar primary surface of the support base, the core semiconductor region comprising a first optical guide layer, an active layer and a second optical guide layer, the active layer comprising an InxoGai-xoN layer, the active layer being provided so as to emit light at a lasing wavelength of not less than 500 nm, the first cladding layer comprising a gallium nitride-based semiconductor different from the III -nitride semiconductor, and material of the gallium nitride-based semiconductor being at least one of AlGaN and InA l GaN, the first epitaxial semiconductor region, the core semiconductor region and the second epitaxial semiconductor region being arranged in order in a direction of a normal axis normal to the semipolar primary surface of the support base, the c-axis being directed in a direction of either of <0001> axis and <000-1> axis, 2 Application No. 12/837,143 Docket No.: 87136-289285 Reply to Office Action of the angle ALPHA being in a range of not less than 10 degrees and less than 80 degrees, a thickness of the first epitaxial semiconductor region being larger than a thickness of the core semiconductor region, a density of misfit dislocations at an interface between the support base and the first epitaxial semiconductor region being not more than 1 x 106 cm -t, a density of misfit dislocations at an interface between the first epitaxial semiconductor region and the core semiconductor region being not more than 1 x 106 cm -t, a density of misfit dislocations at an interface between the core semiconductor region and the second epitaxial semiconductor region being not more than 1 x 106 cm -t, a conductivity type of the first cladding layer being opposite to that of the second cladding layer, the first optical guide layer being provided between the active layer and the first epitaxial semiconductor region, the first optical guide layer comprising a first Inx 1Gaix1 N layer and a first GaN layer, the second optical guide layer being provided between the active layer and the second epitaxial semiconductor region, and the second optical guide layer comprising a second In x 2Ga 1ix 2N layer and a second GaN layer, wherein a direction of the c-axis of the I II -nitride semiconductor and a magnitude of a lattice constant d O thereof in the direction of the c-axis are represented by a lattice vector L V CO, wherein a direction of a c-axis of a semiconductor material of the first cladding la v er in the first epitaxial semiconductor region and a magnitude of a lattice constant d l thereof in the direction of the c-axis are represented by a lattice vector L VC1, 3 Application No. 12/837,143 Docket No.: 87136-289285 Reply to Office Action of wherein the lattice vector L VCO is constituted by a l ongitudinal co m ponent V OL in the direction of the normal axis and a transverse component V OT perpendicular to the longitudinal component, wherein the lattice vector L VC 1 is constituted by a l ongitudinal co m ponent V i_ in the direction of the normal axis and a transverse component V IT perpendicular to the longitudinal component, and wherein a lattice mismatch de g ree (V 1T-VOT)/NOT in the transverse direction satisfies a lattice matching condition.

canceled

The gallium nitride-based semiconductor laser diode according to claim [[6]] 1, wherein a c-axis direction of a semiconductor material of the first Inx 1Gaix1 N layer in the first optical guide layer and a magnitude of a lattice constant d2 thereof in the direction of the c-axis are represented by a lattice vector LVC2, wherein the lattice vector LVC₂ is constituted by a longitudinal component V₂L in the direction of the normal axis and a transverse component V₂T perpendicular to the longitudinal component, and wherein a value of a lattice mismatch degree (V₂T -VOT)/VO T in the transverse direction is in a range satisfying a lattice matching condition.

A gallium nitride-based semiconductor laser diode comprising: a support base of a I II -nitride semiconductor, the support base having a semipolar primary surface, the semipolar primary surface tilting at an angle ALPHA with respect to a first reference plane, the first reference plane being perpendicular to a reference axis, the reference axis extending in a direction of a c-axis of the I II -nitride semiconductor; a first epitaxial semiconductor region comprising a first cladding layer and provided on the semipolar primary surface of the support base; a second epitaxial semiconductor region comprising a second cladding layer and provided on the semipolar primary surface of the support base; and a core semiconductor region provided on the semipolar primary surface of the support base, the core semiconductor region comprising a first optical guide layer, an active layer and a second optical guide layer, the active layer comprising an InxoGai-xoN layer, the active layer being provided so as to emit light at a lasing wavelength of not less than 500 nm, the first cladding layer comprising a gallium nitride-based semiconductor different from the III -nitride semiconductor, and material of the gallium nitride-based semiconductor being at least one of AlGaN and InA l GaN, the first epitaxial semiconductor region, the core semiconductor region and the second epitaxial semiconductor region being arranged in order in a direction of a normal axis normal to the semipolar primary surface of the support base, the c-axis being directed in a direction of either of <0001> axis and <000-1> axis, 2 Application No. 12/837,143 Docket No.: 87136-289285 Reply to Office Action of the angle ALPHA being in a range of not less than 10 degrees and less than 80 degrees, a thickness of the first epitaxial semiconductor region being larger than a thickness of the core semiconductor region, a density of misfit dislocations at an interface between the support base and the first epitaxial semiconductor region being not more than 1 x 106 cm -t, a density of misfit dislocations at an interface between the first epitaxial semiconductor region and the core semiconductor region being not more than 1 x 106 cm -t, a density of misfit dislocations at an interface between the core semiconductor region and the second epitaxial semiconductor region being not more than 1 x 106 cm -t, a conductivity type of the first cladding layer being opposite to that of the second cladding layer, the first optical guide layer being provided between the active layer and the first epitaxial semiconductor region, the first optical guide layer comprising a first Inx 1Gaix1 N layer and a first GaN layer, the second optical guide layer being provided between the active layer and the second epitaxial semiconductor region, and the second optical guide layer comprising a second In x 2Ga 1ix 2N layer and a second GaN layer, wherein a direction of the c-axis of the I II -nitride semiconductor and a magnitude of a lattice constant d O thereof in the direction of the c-axis are represented by a lattice vector L V CO, wherein a direction of a c-axis of a semiconductor material of the first cladding la v er in the first epitaxial semiconductor region and a magnitude of a lattice constant d l thereof in the direction of the c-axis are represented by a lattice vector L VC1, 3 Application No. 12/837,143 Docket No.: 87136-289285 Reply to Office Action of wherein the lattice vector L VCO is constituted by a l ongitudinal co m ponent V OL in the direction of the normal axis and a transverse component V OT perpendicular to the longitudinal component, wherein the lattice vector L VC 1 is constituted by a l ongitudinal co m ponent V i_ in the direction of the normal axis and a transverse component V IT perpendicular to the longitudinal component, and wherein a lattice mismatch de g ree (V 1T-VOT)/NOT in the transverse direction satisfies a lattice matching condition.

canceled

The gallium nitride-based semiconductor laser diode according to claim [[6]] 1, wherein a c-axis direction of a semiconductor material of the first Inx 1Gaix1 N layer in the first optical guide layer and a magnitude of a lattice constant d2 thereof in the direction of the c-axis are represented by a lattice vector LVC2, wherein the lattice vector LVC₂ is constituted by a longitudinal component V₂L in the direction of the normal axis and a transverse component V₂T perpendicular to the longitudinal component, and wherein a value of a lattice mismatch degree (V₂T -VOT)/VO T in the transverse direction is in a range satisfying a lattice matching condition.

A gallium nitride-based semiconductor laser diode comprising: a support base of a I II -nitride semiconductor, the support base having a semipolar primary surface, the semipolar primary surface tilting at an angle ALPHA with respect to a first reference plane, the first reference plane being perpendicular to a reference axis, the reference axis extending in a direction of a c-axis of the I II -nitride semiconductor; a first epitaxial semiconductor region comprising a first cladding layer and provided on the semipolar primary surface of the support base; a second epitaxial semiconductor region comprising a second cladding layer and provided on the semipolar primary surface of the support base; and a core semiconductor region provided on the semipolar primary surface of the support base, the core semiconductor region comprising a first optical guide layer, an active layer and a second optical guide layer, the active layer comprising an InxoGai-xoN layer, the active layer being provided so as to emit light at a lasing wavelength of not less than 500 nm, the first cladding layer comprising a gallium nitride-based semiconductor different from the III -nitride semiconductor, and material of the gallium nitride-based semiconductor being at least one of AlGaN and InA l GaN, the first epitaxial semiconductor region, the core semiconductor region and the second epitaxial semiconductor region being arranged in order in a direction of a normal axis normal to the semipolar primary surface of the support base, the c-axis being directed in a direction of either of <0001> axis and <000-1> axis, 2 Application No. 12/837,143 Docket No.: 87136-289285 Reply to Office Action of the angle ALPHA being in a range of not less than 10 degrees and less than 80 degrees, a thickness of the first epitaxial semiconductor region being larger than a thickness of the core semiconductor region, a density of misfit dislocations at an interface between the support base and the first epitaxial semiconductor region being not more than 1 x 106 cm -t, a density of misfit dislocations at an interface between the first epitaxial semiconductor region and the core semiconductor region being not more than 1 x 106 cm -t, a density of misfit dislocations at an interface between the core semiconductor region and the second epitaxial semiconductor region being not more than 1 x 106 cm -t, a conductivity type of the first cladding layer being opposite to that of the second cladding layer, the first optical guide layer being provided between the active layer and the first epitaxial semiconductor region, the first optical guide layer comprising a first Inx 1Gaix1 N layer and a first GaN layer, the second optical guide layer being provided between the active layer and the second epitaxial semiconductor region, and the second optical guide layer comprising a second In x 2Ga 1ix 2N layer and a second GaN layer, wherein a direction of the c-axis of the I II -nitride semiconductor and a magnitude of a lattice constant d O thereof in the direction of the c-axis are represented by a lattice vector L V CO, wherein a direction of a c-axis of a semiconductor material of the first cladding la v er in the first epitaxial semiconductor region and a magnitude of a lattice constant d l thereof in the direction of the c-axis are represented by a lattice vector L VC1, 3 Application No. 12/837,143 Docket No.: 87136-289285 Reply to Office Action of wherein the lattice vector L VCO is constituted by a l ongitudinal co m ponent V OL in the direction of the normal axis and a transverse component V OT perpendicular to the longitudinal component, wherein the lattice vector L VC 1 is constituted by a l ongitudinal co m ponent V i_ in the direction of the normal axis and a transverse component V IT perpendicular to the longitudinal component, and wherein a lattice mismatch de g ree (V 1T-VOT)/NOT in the transverse direction satisfies a lattice matching condition.

canceled

The gallium nitride-based semiconductor laser diode according to claim [[6]] 1, wherein a c-axis direction of a semiconductor material of the first Inx 1Gaix1 N layer in the first optical guide layer and a magnitude of a lattice constant d2 thereof in the direction of the c-axis are represented by a lattice vector LVC2, wherein the lattice vector LVC₂ is constituted by a longitudinal component V₂L in the direction of the normal axis and a transverse component V₂T perpendicular to the longitudinal component, and wherein a value of a lattice mismatch degree (V₂T -VOT)/VO T in the transverse direction is in a range satisfying a lattice matching condition.