Abstract

The paper develops a theoretical model for frequency multiplication and RF-to-THz conversion in AlGaN/GaN plasmonic crystals using rotonic plasmons and a generalized Mathieu equation with damping. It analyzes gate-voltage-driven carrier-density modulation, parametric resonance, and time-domain frequency multiplication under different temperatures and mobility conditions.

Abstract

The paper develops a theoretical model for frequency multiplication and RF-to-THz conversion in AlGaN/GaN plasmonic crystals using rotonic plasmons and a generalized Mathieu equation with damping. It analyzes gate-voltage-driven carrier-density modulation, parametric resonance, and time-domain frequency multiplication under different temperatures and mobility conditions.

Abstract

The paper develops a theoretical model for frequency multiplication and RF-to-THz conversion in AlGaN/GaN plasmonic crystals using rotonic plasmons and a generalized Mathieu equation with damping. It analyzes gate-voltage-driven carrier-density modulation, parametric resonance, and time-domain frequency multiplication under different temperatures and mobility conditions.

Abstract

The paper develops a theoretical model for frequency multiplication and RF-to-THz conversion in AlGaN/GaN plasmonic crystals using rotonic plasmons and a generalized Mathieu equation with damping. It analyzes gate-voltage-driven carrier-density modulation, parametric resonance, and time-domain frequency multiplication under different temperatures and mobility conditions.