Patent
US 8,372,199BULK GaN AND AlGaN SINGLE CRYSTALS
Yuri V. MELNIK
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,372,199Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a horizontal furnace as used with the invention; [0023]
FIG. 2 is an illustration of one embodiment of a boat suitable for use with the furnace shown in
FIG. 3 is an illustration of an individual source tube and a means of varying the source contained within the tube relative to the reactor; [0025]
FIG. 4 is a block diagram outlining the preferred method of fabricating bulk GaN according to the invention; [0026]
FIG. 5 is a schematic illustration of an alternate embodiment for use in growing AlGaN; [0027]
FIG. 6 is a block diagram outlining the preferred method of fabricating bulk AlGaN according to the invention; [0028]
FIG. 7 is a schematic illustration of an alternate embodiment for use in growing doped material; and 6 [0029]
FIG. 8 outlines a process used in at least one embodiment of the invention to grow material with a matching seed crystal.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a GaN single crystal, the method comprising: providing a GaN seed in a femaeereactor; providing a GaN powder i n 4he4 mfraein an extended source in the reactor; maintaining a portion of the GaN powder in the extended source at a first temperature less than 1000 C: and heating a second portion of the GaN powder in the extended source to sublimate sublim ating- the GaN powder to -and_ grow a GaN crystal on the seed, the crystal having a volume exceeding 4 cubic centimeters, wherein an x, a y, and a z dimension of said GaN single crystal each exceed 1 centimeter.
-3
A method according to claim 13 wherein a-theportion of the GaN powder greater than 90% is maintained at less than 1000 C eltis greater than 90% of the powder in the extended source.
5.
Materials described outside the worked examples.
GaN
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN single crystal boule volume | ≥ 4 cm³ | GaN |
GaN single crystal boule minimum linear dimension | 1 cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,372,199Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a horizontal furnace as used with the invention; [0023]
FIG. 2 is an illustration of one embodiment of a boat suitable for use with the furnace shown in
FIG. 3 is an illustration of an individual source tube and a means of varying the source contained within the tube relative to the reactor; [0025]
FIG. 4 is a block diagram outlining the preferred method of fabricating bulk GaN according to the invention; [0026]
FIG. 5 is a schematic illustration of an alternate embodiment for use in growing AlGaN; [0027]
FIG. 6 is a block diagram outlining the preferred method of fabricating bulk AlGaN according to the invention; [0028]
FIG. 7 is a schematic illustration of an alternate embodiment for use in growing doped material; and 6 [0029]
FIG. 8 outlines a process used in at least one embodiment of the invention to grow material with a matching seed crystal.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a GaN single crystal, the method comprising: providing a GaN seed in a femaeereactor; providing a GaN powder i n 4he4 mfraein an extended source in the reactor; maintaining a portion of the GaN powder in the extended source at a first temperature less than 1000 C: and heating a second portion of the GaN powder in the extended source to sublimate sublim ating- the GaN powder to -and_ grow a GaN crystal on the seed, the crystal having a volume exceeding 4 cubic centimeters, wherein an x, a y, and a z dimension of said GaN single crystal each exceed 1 centimeter.
-3
A method according to claim 13 wherein a-theportion of the GaN powder greater than 90% is maintained at less than 1000 C eltis greater than 90% of the powder in the extended source.
5.
Materials described outside the worked examples.
GaN
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN single crystal boule volume | ≥ 4 cm³ | GaN |
GaN single crystal boule minimum linear dimension | 1 cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,372,199Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a horizontal furnace as used with the invention; [0023]
FIG. 2 is an illustration of one embodiment of a boat suitable for use with the furnace shown in
FIG. 3 is an illustration of an individual source tube and a means of varying the source contained within the tube relative to the reactor; [0025]
FIG. 4 is a block diagram outlining the preferred method of fabricating bulk GaN according to the invention; [0026]
FIG. 5 is a schematic illustration of an alternate embodiment for use in growing AlGaN; [0027]
FIG. 6 is a block diagram outlining the preferred method of fabricating bulk AlGaN according to the invention; [0028]
FIG. 7 is a schematic illustration of an alternate embodiment for use in growing doped material; and 6 [0029]
FIG. 8 outlines a process used in at least one embodiment of the invention to grow material with a matching seed crystal.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a GaN single crystal, the method comprising: providing a GaN seed in a femaeereactor; providing a GaN powder i n 4he4 mfraein an extended source in the reactor; maintaining a portion of the GaN powder in the extended source at a first temperature less than 1000 C: and heating a second portion of the GaN powder in the extended source to sublimate sublim ating- the GaN powder to -and_ grow a GaN crystal on the seed, the crystal having a volume exceeding 4 cubic centimeters, wherein an x, a y, and a z dimension of said GaN single crystal each exceed 1 centimeter.
-3
A method according to claim 13 wherein a-theportion of the GaN powder greater than 90% is maintained at less than 1000 C eltis greater than 90% of the powder in the extended source.
5.
Materials described outside the worked examples.
GaN
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN single crystal boule volume | ≥ 4 cm³ | GaN |
GaN single crystal boule minimum linear dimension | 1 cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,372,199Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a horizontal furnace as used with the invention; [0023]
FIG. 2 is an illustration of one embodiment of a boat suitable for use with the furnace shown in
FIG. 3 is an illustration of an individual source tube and a means of varying the source contained within the tube relative to the reactor; [0025]
FIG. 4 is a block diagram outlining the preferred method of fabricating bulk GaN according to the invention; [0026]
FIG. 5 is a schematic illustration of an alternate embodiment for use in growing AlGaN; [0027]
FIG. 6 is a block diagram outlining the preferred method of fabricating bulk AlGaN according to the invention; [0028]
FIG. 7 is a schematic illustration of an alternate embodiment for use in growing doped material; and 6 [0029]
FIG. 8 outlines a process used in at least one embodiment of the invention to grow material with a matching seed crystal.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a GaN single crystal, the method comprising: providing a GaN seed in a femaeereactor; providing a GaN powder i n 4he4 mfraein an extended source in the reactor; maintaining a portion of the GaN powder in the extended source at a first temperature less than 1000 C: and heating a second portion of the GaN powder in the extended source to sublimate sublim ating- the GaN powder to -and_ grow a GaN crystal on the seed, the crystal having a volume exceeding 4 cubic centimeters, wherein an x, a y, and a z dimension of said GaN single crystal each exceed 1 centimeter.
-3
A method according to claim 13 wherein a-theportion of the GaN powder greater than 90% is maintained at less than 1000 C eltis greater than 90% of the powder in the extended source.
5.
Materials described outside the worked examples.
GaN
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN single crystal boule volume | ≥ 4 cm³ | GaN |
GaN single crystal boule minimum linear dimension | 1 cm |
Related documents with shared materials, methods, properties, or citations.
HCl
ammonia
NH₃
aluminum trichloride
AlCl₃
Temperature | 450–850 °C | — |
Duration | 8–24 hours | — |
Thickness | 200–250 µm | — |
Duration | 5–12 hours | — |
Thickness | 1–2 mm | — |
Temperature | 30–40 °C | — |
Temperature | 250–1050 °C | — |
Temperature | 550–650 °C | — |
Temperature | 450–650 °C | — |
Thickness | 150–500 µm | — |
Temperature | 450–1020 °C | — |
Thickness | 0.002–200 µm | — |
Thickness | 0.05–1 µm | — |
Thickness | 5–500 µm | — |
Thickness | 10–100000 cm | — |
Thickness | 10–10000 cm | — |
Thickness | 10–1000 cm | — |
Thickness | 0.3–2 mm | — |
Thickness | 10–100 µm | — |
Thickness | 0.002–5 µm | — |
Thickness | 1–200 µm | — |
Thickness | 1–3 mm | — |
Duration | 5–10 minutes | — |
Thickness | ≤ 100000 cm | — |
Thickness | ≤ 10000 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 3 nm | — |
Temperature | ≤ 1 °C | — |
Duration | ≥ 10 minutes | — |
Duration | ≥ 30 minutes | — |
Duration | ≥ 24 hours | — |
Temperature | 1000–1100 °C | — |
GALLIUM NITRIDE GEMSTONES
HCl
ammonia
NH₃
aluminum trichloride
AlCl₃
Temperature | 450–850 °C | — |
Duration | 8–24 hours | — |
Thickness | 200–250 µm | — |
Duration | 5–12 hours | — |
Thickness | 1–2 mm | — |
Temperature | 30–40 °C | — |
Temperature | 250–1050 °C | — |
Temperature | 550–650 °C | — |
Temperature | 450–650 °C | — |
Thickness | 150–500 µm | — |
Temperature | 450–1020 °C | — |
Thickness | 0.002–200 µm | — |
Thickness | 0.05–1 µm | — |
Thickness | 5–500 µm | — |
Thickness | 10–100000 cm | — |
Thickness | 10–10000 cm | — |
Thickness | 10–1000 cm | — |
Thickness | 0.3–2 mm | — |
Thickness | 10–100 µm | — |
Thickness | 0.002–5 µm | — |
Thickness | 1–200 µm | — |
Thickness | 1–3 mm | — |
Duration | 5–10 minutes | — |
Thickness | ≤ 100000 cm | — |
Thickness | ≤ 10000 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 3 nm | — |
Temperature | ≤ 1 °C | — |
Duration | ≥ 10 minutes | — |
Duration | ≥ 30 minutes | — |
Duration | ≥ 24 hours | — |
Temperature | 1000–1100 °C | — |
GALLIUM NITRIDE GEMSTONES
HCl
ammonia
NH₃
aluminum trichloride
AlCl₃
Temperature | 450–850 °C | — |
Duration | 8–24 hours | — |
Thickness | 200–250 µm | — |
Duration | 5–12 hours | — |
Thickness | 1–2 mm | — |
Temperature | 30–40 °C | — |
Temperature | 250–1050 °C | — |
Temperature | 550–650 °C | — |
Temperature | 450–650 °C | — |
Thickness | 150–500 µm | — |
Temperature | 450–1020 °C | — |
Thickness | 0.002–200 µm | — |
Thickness | 0.05–1 µm | — |
Thickness | 5–500 µm | — |
Thickness | 10–100000 cm | — |
Thickness | 10–10000 cm | — |
Thickness | 10–1000 cm | — |
Thickness | 0.3–2 mm | — |
Thickness | 10–100 µm | — |
Thickness | 0.002–5 µm | — |
Thickness | 1–200 µm | — |
Thickness | 1–3 mm | — |
Duration | 5–10 minutes | — |
Thickness | ≤ 100000 cm | — |
Thickness | ≤ 10000 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 3 nm | — |
Temperature | ≤ 1 °C | — |
Duration | ≥ 10 minutes | — |
Duration | ≥ 30 minutes | — |
Duration | ≥ 24 hours | — |
Temperature | 1000–1100 °C | — |
GALLIUM NITRIDE GEMSTONES
HCl
ammonia
NH₃
aluminum trichloride
AlCl₃
Temperature | 450–850 °C | — |
Duration | 8–24 hours | — |
Thickness | 200–250 µm | — |
Duration | 5–12 hours | — |
Thickness | 1–2 mm | — |
Temperature | 30–40 °C | — |
Temperature | 250–1050 °C | — |
Temperature | 550–650 °C | — |
Temperature | 450–650 °C | — |
Thickness | 150–500 µm | — |
Temperature | 450–1020 °C | — |
Thickness | 0.002–200 µm | — |
Thickness | 0.05–1 µm | — |
Thickness | 5–500 µm | — |
Thickness | 10–100000 cm | — |
Thickness | 10–10000 cm | — |
Thickness | 10–1000 cm | — |
Thickness | 0.3–2 mm | — |
Thickness | 10–100 µm | — |
Thickness | 0.002–5 µm | — |
Thickness | 1–200 µm | — |
Thickness | 1–3 mm | — |
Duration | 5–10 minutes | — |
Thickness | ≤ 100000 cm | — |
Thickness | ≤ 10000 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 3 nm | — |
Temperature | ≤ 1 °C | — |
Duration | ≥ 10 minutes | — |
Duration | ≥ 30 minutes | — |
Duration | ≥ 24 hours | — |
Temperature | 1000–1100 °C | — |
GALLIUM NITRIDE GEMSTONES