Patent
Atlas literature
Patent
US 12,065,755 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a production process flow chart of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a gallium nitride single crystal film based on a ScAlMgO₄ substrate, comprising following steps: (1) providing the ScAlMgO₄ substrate; (2) growing a buffer layer on a surface of the ScAlMgO₄ substrate; (3) annealing the buffer layer; B₂ (4) growing the gallium nitride single crystal film on the buffer layer; (5) performing cooling, so that the gallium nitride single crystal film is automatically peeled off from the ScAlMgO₄ substrate; wherein step (4) adopts an HVPE method, and comprises following steps to maintain continuous growth and morphology of the gallium nitride single crystal film: j 1 continuously increasing a temperature, and an increase in the temperature is 1-10° C. for every 1 mm increase in a thickness of the gallium nitride single crystal film; and j 2 continuously increasing NH3; an increase in a ratio of NH₃ (or corresponding V/III) is 5%-50% for every 1 mm increase in the thickness of the gallium nitride single crystal film.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the ScAlMgO₄ substrate is a circle or a regular hexagon.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing the buffer layer in step (2) adopts a low-temperature AlN sputtering method, with a temperature set to 300-800° C., and an AlN thickness of 10-300 nm, and in step (3), the annealing is performed on the buffer layer in an H₂/N₂ environment.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing Randle buffer layer in step (2) is growing an AlN thin film template with a thickness of 1-10 µm by adopting an MOCVD method.
The preparation method of the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing the buffer layer in step (2) adopts a high-temperature AlN HVPE method, with a temperature set to 1000-1600° C., and a thickness of 50-3000 nm, and in step (3), reducing at a high temperature of 1600-1700° C. or annealing in an inert environment is performed.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing the buffer layer in step (2) adopts a low-temperature GaN HVPE method, with a temperature set to 300-800° C., and a thickness of about 20-500 nm, and in step (3), annealing at 950-1100° C. is performed.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein performing low-temperature AN sputtering deposi-tion on bottom and side surfaces of the ScAlMgO₄ substrate is further comprised between step (3) and step (4), with a temperature set to 300-800° C., and a thickness of no more than 50 nm. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials4 process steps
Preparation of GaN single crystal film on ScAlMgO₄ substrate using low-temperature AlN sputtering buffer layer. Steps include: (1) providing ScAlMgO₄ substrate (circle or regular polygon); (2) growing AlN buffer layer by low-temperature sputtering using high-purity Al target (>5N purity), N₂/Ar mixed gas, pressure 0.1-2 Pa, temperature 300-800°C (preferably 400-650°C, more preferably 500-600°C); (3) annealing AlN buffer in H₂/N₂ environment at 1200-2000°C (preferably 1350-1850°C, more preferably 1600-1700°C); optional low-temperature AlN sputtering at 300-800°C (preferably 400°C) on bottom and side surfaces of substrate to form protective layer ≤50 nm; (4) HVPE growth of GaN using HCl + Ga (700-900°C) to form GaCl, NH₃ as N source, growth temperature 900-1100°C, V/III ratio 2-1000, H₂/N₂ carrier gas; temperature increased 1-10°C per mm of GaN thickness, NH₃/V-III ratio increased 5%-50% per mm of GaN thickness; (5) cooling to peel GaN from substrate.
Materials described outside the worked examples.
GaCl (gallium source intermediate)
GaCl
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ScAlMgO4 (001) XRD FWHM | ≤ 20 | ScAlMgO₄ |
ScAlMgO4 substrate surface roughness (CMP polished) | ≤ 0.5 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,065,755 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a production process flow chart of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a gallium nitride single crystal film based on a ScAlMgO₄ substrate, comprising following steps: (1) providing the ScAlMgO₄ substrate; (2) growing a buffer layer on a surface of the ScAlMgO₄ substrate; (3) annealing the buffer layer; B₂ (4) growing the gallium nitride single crystal film on the buffer layer; (5) performing cooling, so that the gallium nitride single crystal film is automatically peeled off from the ScAlMgO₄ substrate; wherein step (4) adopts an HVPE method, and comprises following steps to maintain continuous growth and morphology of the gallium nitride single crystal film: j 1 continuously increasing a temperature, and an increase in the temperature is 1-10° C. for every 1 mm increase in a thickness of the gallium nitride single crystal film; and j 2 continuously increasing NH3; an increase in a ratio of NH₃ (or corresponding V/III) is 5%-50% for every 1 mm increase in the thickness of the gallium nitride single crystal film.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the ScAlMgO₄ substrate is a circle or a regular hexagon.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing the buffer layer in step (2) adopts a low-temperature AlN sputtering method, with a temperature set to 300-800° C., and an AlN thickness of 10-300 nm, and in step (3), the annealing is performed on the buffer layer in an H₂/N₂ environment.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing Randle buffer layer in step (2) is growing an AlN thin film template with a thickness of 1-10 µm by adopting an MOCVD method.
The preparation method of the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing the buffer layer in step (2) adopts a high-temperature AlN HVPE method, with a temperature set to 1000-1600° C., and a thickness of 50-3000 nm, and in step (3), reducing at a high temperature of 1600-1700° C. or annealing in an inert environment is performed.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing the buffer layer in step (2) adopts a low-temperature GaN HVPE method, with a temperature set to 300-800° C., and a thickness of about 20-500 nm, and in step (3), annealing at 950-1100° C. is performed.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein performing low-temperature AN sputtering deposi-tion on bottom and side surfaces of the ScAlMgO₄ substrate is further comprised between step (3) and step (4), with a temperature set to 300-800° C., and a thickness of no more than 50 nm. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials4 process steps
Preparation of GaN single crystal film on ScAlMgO₄ substrate using low-temperature AlN sputtering buffer layer. Steps include: (1) providing ScAlMgO₄ substrate (circle or regular polygon); (2) growing AlN buffer layer by low-temperature sputtering using high-purity Al target (>5N purity), N₂/Ar mixed gas, pressure 0.1-2 Pa, temperature 300-800°C (preferably 400-650°C, more preferably 500-600°C); (3) annealing AlN buffer in H₂/N₂ environment at 1200-2000°C (preferably 1350-1850°C, more preferably 1600-1700°C); optional low-temperature AlN sputtering at 300-800°C (preferably 400°C) on bottom and side surfaces of substrate to form protective layer ≤50 nm; (4) HVPE growth of GaN using HCl + Ga (700-900°C) to form GaCl, NH₃ as N source, growth temperature 900-1100°C, V/III ratio 2-1000, H₂/N₂ carrier gas; temperature increased 1-10°C per mm of GaN thickness, NH₃/V-III ratio increased 5%-50% per mm of GaN thickness; (5) cooling to peel GaN from substrate.
Materials described outside the worked examples.
GaCl (gallium source intermediate)
GaCl
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ScAlMgO4 (001) XRD FWHM | ≤ 20 | ScAlMgO₄ |
ScAlMgO4 substrate surface roughness (CMP polished) | ≤ 0.5 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,065,755 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a production process flow chart of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a gallium nitride single crystal film based on a ScAlMgO₄ substrate, comprising following steps: (1) providing the ScAlMgO₄ substrate; (2) growing a buffer layer on a surface of the ScAlMgO₄ substrate; (3) annealing the buffer layer; B₂ (4) growing the gallium nitride single crystal film on the buffer layer; (5) performing cooling, so that the gallium nitride single crystal film is automatically peeled off from the ScAlMgO₄ substrate; wherein step (4) adopts an HVPE method, and comprises following steps to maintain continuous growth and morphology of the gallium nitride single crystal film: j 1 continuously increasing a temperature, and an increase in the temperature is 1-10° C. for every 1 mm increase in a thickness of the gallium nitride single crystal film; and j 2 continuously increasing NH3; an increase in a ratio of NH₃ (or corresponding V/III) is 5%-50% for every 1 mm increase in the thickness of the gallium nitride single crystal film.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the ScAlMgO₄ substrate is a circle or a regular hexagon.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing the buffer layer in step (2) adopts a low-temperature AlN sputtering method, with a temperature set to 300-800° C., and an AlN thickness of 10-300 nm, and in step (3), the annealing is performed on the buffer layer in an H₂/N₂ environment.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing Randle buffer layer in step (2) is growing an AlN thin film template with a thickness of 1-10 µm by adopting an MOCVD method.
The preparation method of the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing the buffer layer in step (2) adopts a high-temperature AlN HVPE method, with a temperature set to 1000-1600° C., and a thickness of 50-3000 nm, and in step (3), reducing at a high temperature of 1600-1700° C. or annealing in an inert environment is performed.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing the buffer layer in step (2) adopts a low-temperature GaN HVPE method, with a temperature set to 300-800° C., and a thickness of about 20-500 nm, and in step (3), annealing at 950-1100° C. is performed.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein performing low-temperature AN sputtering deposi-tion on bottom and side surfaces of the ScAlMgO₄ substrate is further comprised between step (3) and step (4), with a temperature set to 300-800° C., and a thickness of no more than 50 nm. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials4 process steps
Preparation of GaN single crystal film on ScAlMgO₄ substrate using low-temperature AlN sputtering buffer layer. Steps include: (1) providing ScAlMgO₄ substrate (circle or regular polygon); (2) growing AlN buffer layer by low-temperature sputtering using high-purity Al target (>5N purity), N₂/Ar mixed gas, pressure 0.1-2 Pa, temperature 300-800°C (preferably 400-650°C, more preferably 500-600°C); (3) annealing AlN buffer in H₂/N₂ environment at 1200-2000°C (preferably 1350-1850°C, more preferably 1600-1700°C); optional low-temperature AlN sputtering at 300-800°C (preferably 400°C) on bottom and side surfaces of substrate to form protective layer ≤50 nm; (4) HVPE growth of GaN using HCl + Ga (700-900°C) to form GaCl, NH₃ as N source, growth temperature 900-1100°C, V/III ratio 2-1000, H₂/N₂ carrier gas; temperature increased 1-10°C per mm of GaN thickness, NH₃/V-III ratio increased 5%-50% per mm of GaN thickness; (5) cooling to peel GaN from substrate.
Materials described outside the worked examples.
GaCl (gallium source intermediate)
GaCl
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ScAlMgO4 (001) XRD FWHM | ≤ 20 | ScAlMgO₄ |
ScAlMgO4 substrate surface roughness (CMP polished) | ≤ 0.5 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,065,755 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a production process flow chart of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing a gallium nitride single crystal film based on a ScAlMgO₄ substrate, comprising following steps: (1) providing the ScAlMgO₄ substrate; (2) growing a buffer layer on a surface of the ScAlMgO₄ substrate; (3) annealing the buffer layer; B₂ (4) growing the gallium nitride single crystal film on the buffer layer; (5) performing cooling, so that the gallium nitride single crystal film is automatically peeled off from the ScAlMgO₄ substrate; wherein step (4) adopts an HVPE method, and comprises following steps to maintain continuous growth and morphology of the gallium nitride single crystal film: j 1 continuously increasing a temperature, and an increase in the temperature is 1-10° C. for every 1 mm increase in a thickness of the gallium nitride single crystal film; and j 2 continuously increasing NH3; an increase in a ratio of NH₃ (or corresponding V/III) is 5%-50% for every 1 mm increase in the thickness of the gallium nitride single crystal film.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the ScAlMgO₄ substrate is a circle or a regular hexagon.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing the buffer layer in step (2) adopts a low-temperature AlN sputtering method, with a temperature set to 300-800° C., and an AlN thickness of 10-300 nm, and in step (3), the annealing is performed on the buffer layer in an H₂/N₂ environment.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing Randle buffer layer in step (2) is growing an AlN thin film template with a thickness of 1-10 µm by adopting an MOCVD method.
The preparation method of the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing the buffer layer in step (2) adopts a high-temperature AlN HVPE method, with a temperature set to 1000-1600° C., and a thickness of 50-3000 nm, and in step (3), reducing at a high temperature of 1600-1700° C. or annealing in an inert environment is performed.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein the growing the buffer layer in step (2) adopts a low-temperature GaN HVPE method, with a temperature set to 300-800° C., and a thickness of about 20-500 nm, and in step (3), annealing at 950-1100° C. is performed.
The method for preparing the gallium nitride single crystal film based on the ScAlMgO₄ substrate of claim 1, wherein performing low-temperature AN sputtering deposi-tion on bottom and side surfaces of the ScAlMgO₄ substrate is further comprised between step (3) and step (4), with a temperature set to 300-800° C., and a thickness of no more than 50 nm. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials4 process steps
Preparation of GaN single crystal film on ScAlMgO₄ substrate using low-temperature AlN sputtering buffer layer. Steps include: (1) providing ScAlMgO₄ substrate (circle or regular polygon); (2) growing AlN buffer layer by low-temperature sputtering using high-purity Al target (>5N purity), N₂/Ar mixed gas, pressure 0.1-2 Pa, temperature 300-800°C (preferably 400-650°C, more preferably 500-600°C); (3) annealing AlN buffer in H₂/N₂ environment at 1200-2000°C (preferably 1350-1850°C, more preferably 1600-1700°C); optional low-temperature AlN sputtering at 300-800°C (preferably 400°C) on bottom and side surfaces of substrate to form protective layer ≤50 nm; (4) HVPE growth of GaN using HCl + Ga (700-900°C) to form GaCl, NH₃ as N source, growth temperature 900-1100°C, V/III ratio 2-1000, H₂/N₂ carrier gas; temperature increased 1-10°C per mm of GaN thickness, NH₃/V-III ratio increased 5%-50% per mm of GaN thickness; (5) cooling to peel GaN from substrate.
Materials described outside the worked examples.
GaCl (gallium source intermediate)
GaCl
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ScAlMgO4 (001) XRD FWHM | ≤ 20 | ScAlMgO₄ |
ScAlMgO4 substrate surface roughness (CMP polished) | ≤ 0.5 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Pressure | 0.1–2 Pa | — |
Temperature | 300–800 °C | — |
Temperature | 400–650 °C | — |
Temperature | 500–600 °C | — |
Temperature | 1200–2000 °C | — |
Temperature | 700–900 °C | — |
Temperature | 900–1100 °C | — |
Temperature | 1–10 °C | — |
Thickness | 1–10 µm | — |
Temperature | 1200–1600 °C | — |
Temperature | 1500–1600 °C | — |
Thickness | 50–3000 nm | — |
Temperature | 1600–1700 °C | — |
Temperature | 400–700 °C | — |
Thickness | 20–500 nm | — |
Thickness | 50–100 nm | — |
Temperature | 950–1100 °C | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | 10–300 nm | — |
Temperature | 1000–1600 °C | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≥ 0.5 nm | — |
Thickness | ≤ 1000000 cm | — |
Thickness | ≥ 5 mm | — |
Cited non-patent literature · 1
Pressure | 0.1–2 Pa | — |
Temperature | 300–800 °C | — |
Temperature | 400–650 °C | — |
Temperature | 500–600 °C | — |
Temperature | 1200–2000 °C | — |
Temperature | 700–900 °C | — |
Temperature | 900–1100 °C | — |
Temperature | 1–10 °C | — |
Thickness | 1–10 µm | — |
Temperature | 1200–1600 °C | — |
Temperature | 1500–1600 °C | — |
Thickness | 50–3000 nm | — |
Temperature | 1600–1700 °C | — |
Temperature | 400–700 °C | — |
Thickness | 20–500 nm | — |
Thickness | 50–100 nm | — |
Temperature | 950–1100 °C | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | 10–300 nm | — |
Temperature | 1000–1600 °C | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≥ 0.5 nm | — |
Thickness | ≤ 1000000 cm | — |
Thickness | ≥ 5 mm | — |
Cited non-patent literature · 1
Pressure | 0.1–2 Pa | — |
Temperature | 300–800 °C | — |
Temperature | 400–650 °C | — |
Temperature | 500–600 °C | — |
Temperature | 1200–2000 °C | — |
Temperature | 700–900 °C | — |
Temperature | 900–1100 °C | — |
Temperature | 1–10 °C | — |
Thickness | 1–10 µm | — |
Temperature | 1200–1600 °C | — |
Temperature | 1500–1600 °C | — |
Thickness | 50–3000 nm | — |
Temperature | 1600–1700 °C | — |
Temperature | 400–700 °C | — |
Thickness | 20–500 nm | — |
Thickness | 50–100 nm | — |
Temperature | 950–1100 °C | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | 10–300 nm | — |
Temperature | 1000–1600 °C | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≥ 0.5 nm | — |
Thickness | ≤ 1000000 cm | — |
Thickness | ≥ 5 mm | — |
Cited non-patent literature · 1
Pressure | 0.1–2 Pa | — |
Temperature | 300–800 °C | — |
Temperature | 400–650 °C | — |
Temperature | 500–600 °C | — |
Temperature | 1200–2000 °C | — |
Temperature | 700–900 °C | — |
Temperature | 900–1100 °C | — |
Temperature | 1–10 °C | — |
Thickness | 1–10 µm | — |
Temperature | 1200–1600 °C | — |
Temperature | 1500–1600 °C | — |
Thickness | 50–3000 nm | — |
Temperature | 1600–1700 °C | — |
Temperature | 400–700 °C | — |
Thickness | 20–500 nm | — |
Thickness | 50–100 nm | — |
Temperature | 950–1100 °C | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | 10–300 nm | — |
Temperature | 1000–1600 °C | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≥ 0.5 nm | — |
Thickness | ≤ 1000000 cm | — |
Thickness | ≥ 5 mm | — |
Cited non-patent literature · 1
