Patent
US 9,966,258METHOD OF GROWING GALLIUM NITRIDE-BASED CRYSTAL AND HEAT TREATMENT APPARATUS
Kota UMEZAWA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,966,258Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart showing a method of growing a gallium nitride-based crystal according to one embodiment of the present disclosure. [0012]
FIG. 2 is a schematic sectional view showing a heat treatment apparatus according to another embodiment of the present disclosure, which is used in performing …
FIG. 3 is a detailed view of a valve group, a flow controller group, and a gas source group in
FIG. 4B is a sectional view of a workpiece in which an interlayer is formed on the silicon substrate in step S₂ of the method. [0016]
FIG. 5 is an enlarged plane view of the silicon substrate, which shows distribution of crystal nuclei. [0018]
FIGS. 6A and 6B are sectional views of a workpiece in which GaN-based crystals are 3 grown in a vertical direction in step S₄ of the method. [0019]
FIGS. 7A to 7C are sectional views of a workpiece in which GaN-based crystals are grown in a lateral direction in step S₄ of the method.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing a gallium nitride-based crystal, comprising: forming an interlayer including aluminum nitride or aluminum oxide on a silicon substrate at a film forming temperature of 350 to 700 degrees C; heating the silicon substrate and the interlayer in an atmosphere containing ammonia or oxygen, after forming the interlayer, to crystallize the aluminum nitride or the aluminum oxide included in the interlayer such that crystal nuclei of the aluminum nitride or the aluminum oxide included in the interlayer are distributed on the silicon substrate, and to modify portions of the silicon substrate to which the cr y stal nuclei are not distributed into silicon nitrided or silicon oxidized regions; and growing gallium nitride-based crystals on the silicon substrate from the crystal nuclei distributed on the silicon substrate. Currently amended
The method of claim 1, wherein the silicon substrate and the interlayer are heated to a temperature of 900 to 1000 degrees C. Original
The method of claim 1, wherein the silicon substrate and the interlayer are heated at a pressure of 1 to 400 Torr. Original
(Withdrawn-Currently Amended) A heat treatment apparatus, comprising: a processing container; a gas supply unit configured to supply gases into the processing container; a heat unit configured to heat workpieces received in the processing container; and a controller configured to control the gas supply unit and the heating unit, wherein the controller controls the gas supply unit and the heating unit to: a) supply an aluminum-containing gas and a nitrogen-containing gas or an oxygen-containing gas into the processing container, and heat the workpieces to a temperature of 350 to 700 degrees C; b) subsequently supply the ammonia-containing gas or the oxygen-containing gas into the processing container and heat the [[wordpieces]]work p ieces; and c) subsequently supply a gallium-containing gas and the nitrogen-containing gas into the processing container and heat the workpieces.
Layer stacks claimed or described, ordered top of device to substrate.
heat treatment apparatus
No layer stack recorded.
Materials described outside the worked examples.
aluminum nitride
AlN
aluminum oxide
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 1–400 Torr | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,966,258Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart showing a method of growing a gallium nitride-based crystal according to one embodiment of the present disclosure. [0012]
FIG. 2 is a schematic sectional view showing a heat treatment apparatus according to another embodiment of the present disclosure, which is used in performing …
FIG. 3 is a detailed view of a valve group, a flow controller group, and a gas source group in
FIG. 4B is a sectional view of a workpiece in which an interlayer is formed on the silicon substrate in step S₂ of the method. [0016]
FIG. 5 is an enlarged plane view of the silicon substrate, which shows distribution of crystal nuclei. [0018]
FIGS. 6A and 6B are sectional views of a workpiece in which GaN-based crystals are 3 grown in a vertical direction in step S₄ of the method. [0019]
FIGS. 7A to 7C are sectional views of a workpiece in which GaN-based crystals are grown in a lateral direction in step S₄ of the method.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing a gallium nitride-based crystal, comprising: forming an interlayer including aluminum nitride or aluminum oxide on a silicon substrate at a film forming temperature of 350 to 700 degrees C; heating the silicon substrate and the interlayer in an atmosphere containing ammonia or oxygen, after forming the interlayer, to crystallize the aluminum nitride or the aluminum oxide included in the interlayer such that crystal nuclei of the aluminum nitride or the aluminum oxide included in the interlayer are distributed on the silicon substrate, and to modify portions of the silicon substrate to which the cr y stal nuclei are not distributed into silicon nitrided or silicon oxidized regions; and growing gallium nitride-based crystals on the silicon substrate from the crystal nuclei distributed on the silicon substrate. Currently amended
The method of claim 1, wherein the silicon substrate and the interlayer are heated to a temperature of 900 to 1000 degrees C. Original
The method of claim 1, wherein the silicon substrate and the interlayer are heated at a pressure of 1 to 400 Torr. Original
(Withdrawn-Currently Amended) A heat treatment apparatus, comprising: a processing container; a gas supply unit configured to supply gases into the processing container; a heat unit configured to heat workpieces received in the processing container; and a controller configured to control the gas supply unit and the heating unit, wherein the controller controls the gas supply unit and the heating unit to: a) supply an aluminum-containing gas and a nitrogen-containing gas or an oxygen-containing gas into the processing container, and heat the workpieces to a temperature of 350 to 700 degrees C; b) subsequently supply the ammonia-containing gas or the oxygen-containing gas into the processing container and heat the [[wordpieces]]work p ieces; and c) subsequently supply a gallium-containing gas and the nitrogen-containing gas into the processing container and heat the workpieces.
Layer stacks claimed or described, ordered top of device to substrate.
heat treatment apparatus
No layer stack recorded.
Materials described outside the worked examples.
aluminum nitride
AlN
aluminum oxide
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 1–400 Torr | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,966,258Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart showing a method of growing a gallium nitride-based crystal according to one embodiment of the present disclosure. [0012]
FIG. 2 is a schematic sectional view showing a heat treatment apparatus according to another embodiment of the present disclosure, which is used in performing …
FIG. 3 is a detailed view of a valve group, a flow controller group, and a gas source group in
FIG. 4B is a sectional view of a workpiece in which an interlayer is formed on the silicon substrate in step S₂ of the method. [0016]
FIG. 5 is an enlarged plane view of the silicon substrate, which shows distribution of crystal nuclei. [0018]
FIGS. 6A and 6B are sectional views of a workpiece in which GaN-based crystals are 3 grown in a vertical direction in step S₄ of the method. [0019]
FIGS. 7A to 7C are sectional views of a workpiece in which GaN-based crystals are grown in a lateral direction in step S₄ of the method.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing a gallium nitride-based crystal, comprising: forming an interlayer including aluminum nitride or aluminum oxide on a silicon substrate at a film forming temperature of 350 to 700 degrees C; heating the silicon substrate and the interlayer in an atmosphere containing ammonia or oxygen, after forming the interlayer, to crystallize the aluminum nitride or the aluminum oxide included in the interlayer such that crystal nuclei of the aluminum nitride or the aluminum oxide included in the interlayer are distributed on the silicon substrate, and to modify portions of the silicon substrate to which the cr y stal nuclei are not distributed into silicon nitrided or silicon oxidized regions; and growing gallium nitride-based crystals on the silicon substrate from the crystal nuclei distributed on the silicon substrate. Currently amended
The method of claim 1, wherein the silicon substrate and the interlayer are heated to a temperature of 900 to 1000 degrees C. Original
The method of claim 1, wherein the silicon substrate and the interlayer are heated at a pressure of 1 to 400 Torr. Original
(Withdrawn-Currently Amended) A heat treatment apparatus, comprising: a processing container; a gas supply unit configured to supply gases into the processing container; a heat unit configured to heat workpieces received in the processing container; and a controller configured to control the gas supply unit and the heating unit, wherein the controller controls the gas supply unit and the heating unit to: a) supply an aluminum-containing gas and a nitrogen-containing gas or an oxygen-containing gas into the processing container, and heat the workpieces to a temperature of 350 to 700 degrees C; b) subsequently supply the ammonia-containing gas or the oxygen-containing gas into the processing container and heat the [[wordpieces]]work p ieces; and c) subsequently supply a gallium-containing gas and the nitrogen-containing gas into the processing container and heat the workpieces.
Layer stacks claimed or described, ordered top of device to substrate.
heat treatment apparatus
No layer stack recorded.
Materials described outside the worked examples.
aluminum nitride
AlN
aluminum oxide
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 1–400 Torr | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,966,258Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart showing a method of growing a gallium nitride-based crystal according to one embodiment of the present disclosure. [0012]
FIG. 2 is a schematic sectional view showing a heat treatment apparatus according to another embodiment of the present disclosure, which is used in performing …
FIG. 3 is a detailed view of a valve group, a flow controller group, and a gas source group in
FIG. 4B is a sectional view of a workpiece in which an interlayer is formed on the silicon substrate in step S₂ of the method. [0016]
FIG. 5 is an enlarged plane view of the silicon substrate, which shows distribution of crystal nuclei. [0018]
FIGS. 6A and 6B are sectional views of a workpiece in which GaN-based crystals are 3 grown in a vertical direction in step S₄ of the method. [0019]
FIGS. 7A to 7C are sectional views of a workpiece in which GaN-based crystals are grown in a lateral direction in step S₄ of the method.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing a gallium nitride-based crystal, comprising: forming an interlayer including aluminum nitride or aluminum oxide on a silicon substrate at a film forming temperature of 350 to 700 degrees C; heating the silicon substrate and the interlayer in an atmosphere containing ammonia or oxygen, after forming the interlayer, to crystallize the aluminum nitride or the aluminum oxide included in the interlayer such that crystal nuclei of the aluminum nitride or the aluminum oxide included in the interlayer are distributed on the silicon substrate, and to modify portions of the silicon substrate to which the cr y stal nuclei are not distributed into silicon nitrided or silicon oxidized regions; and growing gallium nitride-based crystals on the silicon substrate from the crystal nuclei distributed on the silicon substrate. Currently amended
The method of claim 1, wherein the silicon substrate and the interlayer are heated to a temperature of 900 to 1000 degrees C. Original
The method of claim 1, wherein the silicon substrate and the interlayer are heated at a pressure of 1 to 400 Torr. Original
(Withdrawn-Currently Amended) A heat treatment apparatus, comprising: a processing container; a gas supply unit configured to supply gases into the processing container; a heat unit configured to heat workpieces received in the processing container; and a controller configured to control the gas supply unit and the heating unit, wherein the controller controls the gas supply unit and the heating unit to: a) supply an aluminum-containing gas and a nitrogen-containing gas or an oxygen-containing gas into the processing container, and heat the workpieces to a temperature of 350 to 700 degrees C; b) subsequently supply the ammonia-containing gas or the oxygen-containing gas into the processing container and heat the [[wordpieces]]work p ieces; and c) subsequently supply a gallium-containing gas and the nitrogen-containing gas into the processing container and heat the workpieces.
Layer stacks claimed or described, ordered top of device to substrate.
heat treatment apparatus
No layer stack recorded.
Materials described outside the worked examples.
aluminum nitride
AlN
aluminum oxide
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 1–400 Torr | — |
Related documents with shared materials, methods, properties, or citations.
silicon substrate
Si
gallium nitride-based crystal
silicon nitrided or silicon oxidized regions
aluminum-containing gas
nitrogen-containing gas/oxygen-containing gas/ammonia-containing gas
gallium-containing gas
trimethyl aluminum
Al(CH₃)3
trichlorogallium
GaCl₃
trimethyl gallium
Ga(CH₃)3
triethyl gallium
Ga(C₂H₅)3
ammonia
NH₃
nitrogen
N₂
oxygen
O₂
ozone
O₃
silicon substrate
Si
gallium nitride-based crystal
silicon nitrided or silicon oxidized regions
aluminum-containing gas
nitrogen-containing gas/oxygen-containing gas/ammonia-containing gas
gallium-containing gas
trimethyl aluminum
Al(CH₃)3
trichlorogallium
GaCl₃
trimethyl gallium
Ga(CH₃)3
triethyl gallium
Ga(C₂H₅)3
ammonia
NH₃
nitrogen
N₂
oxygen
O₂
ozone
O₃
silicon substrate
Si
gallium nitride-based crystal
silicon nitrided or silicon oxidized regions
aluminum-containing gas
nitrogen-containing gas/oxygen-containing gas/ammonia-containing gas
gallium-containing gas
trimethyl aluminum
Al(CH₃)3
trichlorogallium
GaCl₃
trimethyl gallium
Ga(CH₃)3
triethyl gallium
Ga(C₂H₅)3
ammonia
NH₃
nitrogen
N₂
oxygen
O₂
ozone
O₃
silicon substrate
Si
gallium nitride-based crystal
silicon nitrided or silicon oxidized regions
aluminum-containing gas
nitrogen-containing gas/oxygen-containing gas/ammonia-containing gas
gallium-containing gas
trimethyl aluminum
Al(CH₃)3
trichlorogallium
GaCl₃
trimethyl gallium
Ga(CH₃)3
triethyl gallium
Ga(C₂H₅)3
ammonia
NH₃
nitrogen
N₂
oxygen
O₂
ozone
O₃