Patent
US 9,478,424Method for fabricating an improved GaN-based semiconductor layer
Claire AGRAFFEIL
US
Copyright © 2026 Matter42. All rights reserved.
GaN-base semiconductor material (n-doped with Si)
| — |
Temperature | 20–700 °C | — |
Temperature | 600–850 °C | — |
Thickness | 1–40 nm | — |
Thickness | 1–20 nm | — |
Temperature | 750–900 °C | — |
Duration | 15–120 min | — |
METHOD OF MANUFACTURING GAN-BASED TRANSISTORS
GaN-base semiconductor material (n-doped with Si)
| — |
Temperature | 20–700 °C | — |
Temperature | 600–850 °C | — |
Thickness | 1–40 nm | — |
Thickness | 1–20 nm | — |
Temperature | 750–900 °C | — |
Duration | 15–120 min | — |
METHOD OF MANUFACTURING GAN-BASED TRANSISTORS
GaN-base semiconductor material (n-doped with Si)
| — |
Temperature | 20–700 °C | — |
Temperature | 600–850 °C | — |
Thickness | 1–40 nm | — |
Thickness | 1–20 nm | — |
Temperature | 750–900 °C | — |
Duration | 15–120 min | — |
METHOD OF MANUFACTURING GAN-BASED TRANSISTORS
GaN-base semiconductor material (n-doped with Si)
| — |
Temperature | 20–700 °C | — |
Temperature | 600–850 °C | — |
Thickness | 1–40 nm | — |
Thickness | 1–20 nm | — |
Temperature | 750–900 °C | — |
Duration | 15–120 min | — |
METHOD OF MANUFACTURING GAN-BASED TRANSISTORS