Patent
US 9,306,126Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium
Jianhua Hu, Heng Kai Hsu, Minh Huu Le, Sandeep Nijhawan et al.
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,306,126Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B illustrates an example of a flip-chip LED. A flip-chip LED is fabricated to emit its output light toward the substrate. Originally, the film stack is …
FIG. 2 is a flowchart of an example process for forming some embodiments of transparent conductive contacts. [0019] FIG s. 3A-3D conceptually illustrate a …
FIG. 3A, transparent oxide layer 302 is formed on substrate 301. Substrate 301 may have underlying layers and structures that are not explicitly shown. …
FIG. 4B illustrates an example where composite transparent conductive layer 414, or at least its constituent stack (e.g. one of 424a-d) was formed before the …
FIG. 5 conceptually illustrates an example PVD tool that may be used to form some of the described layers.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optoelectronic device[[,]] comprising: a III-V semiconductor region; and a transparent conductive layer in direct contact with the [[a]] I II -V semiconductor region on a substrate; wherein the transparent conductive layer comprises a[[n]] transparent conductive oxide of a first metal, and wherein the transparent conductive layer oxide further comprises a second metal, and wherein a concentration of the second metal is uniform within the transparent conductive layer.
The device of claim 1, wherein a work function of the transparent conductive layer matches a work function of the I II -V semiconductor region within ± 0.2 eV.
The device of claim 1, wherein the second metal comprises aluminum or titanium.
The device of claim 1, wherein the transparent conductive oxide of the first metal comprises indium tin oxide.
The device of claim 1, wherein the transparent conductive oxide of the first metal comprises zin c oxide.
The device of claim 1, wherein the transparent conductive layer oxide of the first metal further comprises an oxide of the second metal.
The device of claim 1, wherein the transparent conductive layer has a thickness between about 50nm and about 100nm.
The device of claim 1, wherein the transparent conductive layer is at least 30 % crystalline.
The device of claim 1, wherein the I II -V semiconductor region comprises gallium nitride.
The device of claim 1, wherein the transparent conductive layer comp ri ses substitutional defects.
The device of claim 1, wherein a specific contact resistivity of an interface between the transparent conductive layer and the I II -V semiconductor surface is less than about 0.005 f -cm 2.
The device of claim 1, wherein the transparent conductive layer has an optical absorption below about 0.03 %/nm for a visible wavelength.
The device of claim 1, wherein at least a portion of metal atoms of the second metal in the transparent conductive layer are not bound to other atoms.
The device of claim 1, wherein a work function of the transparent conductive layer is between about 4 eV and 5 eV.
The device of claim 1, wherein the transparent conductive oxide comprises aluminum zin c oxide having 0.1-5 wt % aluminum.
The device of claim 1, wherein the second metal comprises aluminum.
The device of claim 1, wherein the III -V semiconductor region comprises n-GaN.
The device of claim 1, wherein the I II -V semiconductor region comprises p-GaN. US 14/330,616 Attorney Docket No: I M₁₂₅₄ _ US 4
9-10. canceled
canceled
16-20. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic device with transparent ohmic contact
Materials described outside the worked examples.
transparent conductive oxide (first metal)
second metal (in transparent conductive layer)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific contact resistivity of TCO/III-V interface | ≤ 0.005 Ω·cm² | transparent conductive oxide (first metal) |
work function of transparent conductive layer | 4–5 eV |
Related documents with shared materials, methods, properties, or citations.
Method for providing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate
GALLIUM NITRIDE SINTERED BODY OR GALLIUM NITRIDE MOLDED ARTICLE, AND METHOD FOR PRODUCING SAME
Patent
Atlas literature
Patent
US 9,306,126Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B illustrates an example of a flip-chip LED. A flip-chip LED is fabricated to emit its output light toward the substrate. Originally, the film stack is …
FIG. 2 is a flowchart of an example process for forming some embodiments of transparent conductive contacts. [0019] FIG s. 3A-3D conceptually illustrate a …
FIG. 3A, transparent oxide layer 302 is formed on substrate 301. Substrate 301 may have underlying layers and structures that are not explicitly shown. …
FIG. 4B illustrates an example where composite transparent conductive layer 414, or at least its constituent stack (e.g. one of 424a-d) was formed before the …
FIG. 5 conceptually illustrates an example PVD tool that may be used to form some of the described layers.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optoelectronic device[[,]] comprising: a III-V semiconductor region; and a transparent conductive layer in direct contact with the [[a]] I II -V semiconductor region on a substrate; wherein the transparent conductive layer comprises a[[n]] transparent conductive oxide of a first metal, and wherein the transparent conductive layer oxide further comprises a second metal, and wherein a concentration of the second metal is uniform within the transparent conductive layer.
The device of claim 1, wherein a work function of the transparent conductive layer matches a work function of the I II -V semiconductor region within ± 0.2 eV.
The device of claim 1, wherein the second metal comprises aluminum or titanium.
The device of claim 1, wherein the transparent conductive oxide of the first metal comprises indium tin oxide.
The device of claim 1, wherein the transparent conductive oxide of the first metal comprises zin c oxide.
The device of claim 1, wherein the transparent conductive layer oxide of the first metal further comprises an oxide of the second metal.
The device of claim 1, wherein the transparent conductive layer has a thickness between about 50nm and about 100nm.
The device of claim 1, wherein the transparent conductive layer is at least 30 % crystalline.
The device of claim 1, wherein the I II -V semiconductor region comprises gallium nitride.
The device of claim 1, wherein the transparent conductive layer comp ri ses substitutional defects.
The device of claim 1, wherein a specific contact resistivity of an interface between the transparent conductive layer and the I II -V semiconductor surface is less than about 0.005 f -cm 2.
The device of claim 1, wherein the transparent conductive layer has an optical absorption below about 0.03 %/nm for a visible wavelength.
The device of claim 1, wherein at least a portion of metal atoms of the second metal in the transparent conductive layer are not bound to other atoms.
The device of claim 1, wherein a work function of the transparent conductive layer is between about 4 eV and 5 eV.
The device of claim 1, wherein the transparent conductive oxide comprises aluminum zin c oxide having 0.1-5 wt % aluminum.
The device of claim 1, wherein the second metal comprises aluminum.
The device of claim 1, wherein the III -V semiconductor region comprises n-GaN.
The device of claim 1, wherein the I II -V semiconductor region comprises p-GaN. US 14/330,616 Attorney Docket No: I M₁₂₅₄ _ US 4
9-10. canceled
canceled
16-20. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic device with transparent ohmic contact
Materials described outside the worked examples.
transparent conductive oxide (first metal)
second metal (in transparent conductive layer)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific contact resistivity of TCO/III-V interface | ≤ 0.005 Ω·cm² | transparent conductive oxide (first metal) |
work function of transparent conductive layer | 4–5 eV |
Related documents with shared materials, methods, properties, or citations.
Method for providing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate
GALLIUM NITRIDE SINTERED BODY OR GALLIUM NITRIDE MOLDED ARTICLE, AND METHOD FOR PRODUCING SAME
Patent
Atlas literature
Patent
US 9,306,126Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B illustrates an example of a flip-chip LED. A flip-chip LED is fabricated to emit its output light toward the substrate. Originally, the film stack is …
FIG. 2 is a flowchart of an example process for forming some embodiments of transparent conductive contacts. [0019] FIG s. 3A-3D conceptually illustrate a …
FIG. 3A, transparent oxide layer 302 is formed on substrate 301. Substrate 301 may have underlying layers and structures that are not explicitly shown. …
FIG. 4B illustrates an example where composite transparent conductive layer 414, or at least its constituent stack (e.g. one of 424a-d) was formed before the …
FIG. 5 conceptually illustrates an example PVD tool that may be used to form some of the described layers.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optoelectronic device[[,]] comprising: a III-V semiconductor region; and a transparent conductive layer in direct contact with the [[a]] I II -V semiconductor region on a substrate; wherein the transparent conductive layer comprises a[[n]] transparent conductive oxide of a first metal, and wherein the transparent conductive layer oxide further comprises a second metal, and wherein a concentration of the second metal is uniform within the transparent conductive layer.
The device of claim 1, wherein a work function of the transparent conductive layer matches a work function of the I II -V semiconductor region within ± 0.2 eV.
The device of claim 1, wherein the second metal comprises aluminum or titanium.
The device of claim 1, wherein the transparent conductive oxide of the first metal comprises indium tin oxide.
The device of claim 1, wherein the transparent conductive oxide of the first metal comprises zin c oxide.
The device of claim 1, wherein the transparent conductive layer oxide of the first metal further comprises an oxide of the second metal.
The device of claim 1, wherein the transparent conductive layer has a thickness between about 50nm and about 100nm.
The device of claim 1, wherein the transparent conductive layer is at least 30 % crystalline.
The device of claim 1, wherein the I II -V semiconductor region comprises gallium nitride.
The device of claim 1, wherein the transparent conductive layer comp ri ses substitutional defects.
The device of claim 1, wherein a specific contact resistivity of an interface between the transparent conductive layer and the I II -V semiconductor surface is less than about 0.005 f -cm 2.
The device of claim 1, wherein the transparent conductive layer has an optical absorption below about 0.03 %/nm for a visible wavelength.
The device of claim 1, wherein at least a portion of metal atoms of the second metal in the transparent conductive layer are not bound to other atoms.
The device of claim 1, wherein a work function of the transparent conductive layer is between about 4 eV and 5 eV.
The device of claim 1, wherein the transparent conductive oxide comprises aluminum zin c oxide having 0.1-5 wt % aluminum.
The device of claim 1, wherein the second metal comprises aluminum.
The device of claim 1, wherein the III -V semiconductor region comprises n-GaN.
The device of claim 1, wherein the I II -V semiconductor region comprises p-GaN. US 14/330,616 Attorney Docket No: I M₁₂₅₄ _ US 4
9-10. canceled
canceled
16-20. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic device with transparent ohmic contact
Materials described outside the worked examples.
transparent conductive oxide (first metal)
second metal (in transparent conductive layer)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific contact resistivity of TCO/III-V interface | ≤ 0.005 Ω·cm² | transparent conductive oxide (first metal) |
work function of transparent conductive layer | 4–5 eV |
Related documents with shared materials, methods, properties, or citations.
Method for providing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate
GALLIUM NITRIDE SINTERED BODY OR GALLIUM NITRIDE MOLDED ARTICLE, AND METHOD FOR PRODUCING SAME
Patent
Atlas literature
Patent
US 9,306,126Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B illustrates an example of a flip-chip LED. A flip-chip LED is fabricated to emit its output light toward the substrate. Originally, the film stack is …
FIG. 2 is a flowchart of an example process for forming some embodiments of transparent conductive contacts. [0019] FIG s. 3A-3D conceptually illustrate a …
FIG. 3A, transparent oxide layer 302 is formed on substrate 301. Substrate 301 may have underlying layers and structures that are not explicitly shown. …
FIG. 4B illustrates an example where composite transparent conductive layer 414, or at least its constituent stack (e.g. one of 424a-d) was formed before the …
FIG. 5 conceptually illustrates an example PVD tool that may be used to form some of the described layers.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optoelectronic device[[,]] comprising: a III-V semiconductor region; and a transparent conductive layer in direct contact with the [[a]] I II -V semiconductor region on a substrate; wherein the transparent conductive layer comprises a[[n]] transparent conductive oxide of a first metal, and wherein the transparent conductive layer oxide further comprises a second metal, and wherein a concentration of the second metal is uniform within the transparent conductive layer.
The device of claim 1, wherein a work function of the transparent conductive layer matches a work function of the I II -V semiconductor region within ± 0.2 eV.
The device of claim 1, wherein the second metal comprises aluminum or titanium.
The device of claim 1, wherein the transparent conductive oxide of the first metal comprises indium tin oxide.
The device of claim 1, wherein the transparent conductive oxide of the first metal comprises zin c oxide.
The device of claim 1, wherein the transparent conductive layer oxide of the first metal further comprises an oxide of the second metal.
The device of claim 1, wherein the transparent conductive layer has a thickness between about 50nm and about 100nm.
The device of claim 1, wherein the transparent conductive layer is at least 30 % crystalline.
The device of claim 1, wherein the I II -V semiconductor region comprises gallium nitride.
The device of claim 1, wherein the transparent conductive layer comp ri ses substitutional defects.
The device of claim 1, wherein a specific contact resistivity of an interface between the transparent conductive layer and the I II -V semiconductor surface is less than about 0.005 f -cm 2.
The device of claim 1, wherein the transparent conductive layer has an optical absorption below about 0.03 %/nm for a visible wavelength.
The device of claim 1, wherein at least a portion of metal atoms of the second metal in the transparent conductive layer are not bound to other atoms.
The device of claim 1, wherein a work function of the transparent conductive layer is between about 4 eV and 5 eV.
The device of claim 1, wherein the transparent conductive oxide comprises aluminum zin c oxide having 0.1-5 wt % aluminum.
The device of claim 1, wherein the second metal comprises aluminum.
The device of claim 1, wherein the III -V semiconductor region comprises n-GaN.
The device of claim 1, wherein the I II -V semiconductor region comprises p-GaN. US 14/330,616 Attorney Docket No: I M₁₂₅₄ _ US 4
9-10. canceled
canceled
16-20. canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
optoelectronic device with transparent ohmic contact
Materials described outside the worked examples.
transparent conductive oxide (first metal)
second metal (in transparent conductive layer)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific contact resistivity of TCO/III-V interface | ≤ 0.005 Ω·cm² | transparent conductive oxide (first metal) |
work function of transparent conductive layer | 4–5 eV |
Related documents with shared materials, methods, properties, or citations.
Method for providing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate
GALLIUM NITRIDE SINTERED BODY OR GALLIUM NITRIDE MOLDED ARTICLE, AND METHOD FOR PRODUCING SAME
aluminum
Al
titanium
Ti
indium tin oxide
zinc oxide
ZnO
aluminum zinc oxide
indium zinc oxide
gallium nitride
GaN
indium tin oxide (ITO, ~90 wt% In₂O3, ~10 wt% SnO₂)
aluminum zinc oxide (AZO, 0.1-5 wt% Al)
indium zinc oxide (IZO, 0.1-5 wt% In)
transparent conductive oxide (first metal) |
work function match between TCO layer and III-V semiconductor | ≤ 0.2 eV | transparent conductive oxide (first metal) |
optical absorption of transparent conductive layer at visible wavelengths | ≤ 0.03 %/nm | transparent conductive oxide (first metal) |
transparent conductive layer thickness | 50–100 nm | transparent conductive oxide (first metal) |
crystallinity of transparent conductive layer | ≥ 30 % | transparent conductive oxide (first metal) |
thin metal layer thickness prior to annealing | 0.1–5 nm | second metal (in transparent conductive layer) |
Duration | 3–10 minutes | — |
— | 4.3–4.5 eV | — |
— | 4.06–4.26 eV | — |
Thickness | 0.5–5 nm | — |
— | 1–7 W | — |
— | 2.5–15 W | — |
Thickness | 400–650 nm | — |
aluminum
Al
titanium
Ti
indium tin oxide
zinc oxide
ZnO
aluminum zinc oxide
indium zinc oxide
gallium nitride
GaN
indium tin oxide (ITO, ~90 wt% In₂O3, ~10 wt% SnO₂)
aluminum zinc oxide (AZO, 0.1-5 wt% Al)
indium zinc oxide (IZO, 0.1-5 wt% In)
transparent conductive oxide (first metal) |
work function match between TCO layer and III-V semiconductor | ≤ 0.2 eV | transparent conductive oxide (first metal) |
optical absorption of transparent conductive layer at visible wavelengths | ≤ 0.03 %/nm | transparent conductive oxide (first metal) |
transparent conductive layer thickness | 50–100 nm | transparent conductive oxide (first metal) |
crystallinity of transparent conductive layer | ≥ 30 % | transparent conductive oxide (first metal) |
thin metal layer thickness prior to annealing | 0.1–5 nm | second metal (in transparent conductive layer) |
Duration | 3–10 minutes | — |
— | 4.3–4.5 eV | — |
— | 4.06–4.26 eV | — |
Thickness | 0.5–5 nm | — |
— | 1–7 W | — |
— | 2.5–15 W | — |
Thickness | 400–650 nm | — |
aluminum
Al
titanium
Ti
indium tin oxide
zinc oxide
ZnO
aluminum zinc oxide
indium zinc oxide
gallium nitride
GaN
indium tin oxide (ITO, ~90 wt% In₂O3, ~10 wt% SnO₂)
aluminum zinc oxide (AZO, 0.1-5 wt% Al)
indium zinc oxide (IZO, 0.1-5 wt% In)
transparent conductive oxide (first metal) |
work function match between TCO layer and III-V semiconductor | ≤ 0.2 eV | transparent conductive oxide (first metal) |
optical absorption of transparent conductive layer at visible wavelengths | ≤ 0.03 %/nm | transparent conductive oxide (first metal) |
transparent conductive layer thickness | 50–100 nm | transparent conductive oxide (first metal) |
crystallinity of transparent conductive layer | ≥ 30 % | transparent conductive oxide (first metal) |
thin metal layer thickness prior to annealing | 0.1–5 nm | second metal (in transparent conductive layer) |
Duration | 3–10 minutes | — |
— | 4.3–4.5 eV | — |
— | 4.06–4.26 eV | — |
Thickness | 0.5–5 nm | — |
— | 1–7 W | — |
— | 2.5–15 W | — |
Thickness | 400–650 nm | — |
aluminum
Al
titanium
Ti
indium tin oxide
zinc oxide
ZnO
aluminum zinc oxide
indium zinc oxide
gallium nitride
GaN
indium tin oxide (ITO, ~90 wt% In₂O3, ~10 wt% SnO₂)
aluminum zinc oxide (AZO, 0.1-5 wt% Al)
indium zinc oxide (IZO, 0.1-5 wt% In)
transparent conductive oxide (first metal) |
work function match between TCO layer and III-V semiconductor | ≤ 0.2 eV | transparent conductive oxide (first metal) |
optical absorption of transparent conductive layer at visible wavelengths | ≤ 0.03 %/nm | transparent conductive oxide (first metal) |
transparent conductive layer thickness | 50–100 nm | transparent conductive oxide (first metal) |
crystallinity of transparent conductive layer | ≥ 30 % | transparent conductive oxide (first metal) |
thin metal layer thickness prior to annealing | 0.1–5 nm | second metal (in transparent conductive layer) |
Duration | 3–10 minutes | — |
— | 4.3–4.5 eV | — |
— | 4.06–4.26 eV | — |
Thickness | 0.5–5 nm | — |
— | 1–7 W | — |
— | 2.5–15 W | — |
Thickness | 400–650 nm | — |