SUBSTRATE FOR THE EPITAXIAL GROWTH OF GALLIUM NITRIDE

Eric Mattmann

Patent

Atlas literature

Patent

US 8,278,656

SUBSTRATE FOR THE EPITAXIAL GROWTH OF GALLIUM NITRIDE

Eric Mattmann

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

5 independent · 17 dependent

1
IndependentZnOintermediate layer comprising oxides of at least two elements from Sn, Zn, Ga, SbIII-N or II-VI semiconductor structuresubstrate for epitaxial growth of GaN
A substrate comprising a support material coated on at least one face thereof with at least one multilayered stack comprising at least one zinc oxide comprising layer, said substrate coated with a I II -N or I I -VI semiconductor structure, wherein at least one intermediate layer is present between the support material and said at least one zin c oxide comprising layer, said at least one intermediate layer comprising oxides of at least two elements selected from the group consisting of tin (Sn), zin c (Zn), indium (In), gallium (Ga) and antimony (Sb), wherein the intermediate layer is amorphous before the zin c oxide comprising layer is deposited.
1. 22
  Dependent← claim 1ZnOsubstrate for epitaxial growth of GaN
  The substrate as claimed in claim 1, wherein the zin c oxide comprising layer consists of polycrystalline zinc oxide crystallized in the hexagonal form.
2
IndependentZnOintermediate layer comprising oxides of at least two elements from Sn, Zn, Ga, Sbsubstrate for epitaxial growth of GaN
A substrate, comprising a support material coated on at least one face thereof with at least one multilayered stack comprising at least one zin c oxide comprising layer, wherein at least one intermediate layer is present between the support material and said at least one zin c oxide comprising layer, said at least one intermediate layer comprising oxides of at least two elements selected from the group consisting of tin (Sn), zin c (Zn), gallium (Ga) and antimony (Sb), wherein the intermediate layer is amorphous before the zin c oxide comprising layer is deposited.
1. 3
  Dependent← claim 2substrate for epitaxial growth of GaN
  The substrate as claimed in claim 2, wherein the support material is coated on only one face thereof and the multilayer consists of a single zin c oxide comprising layer or a single intermediate layer.
2. 4
  Dependent← claim 2support material (sapphire, silicon carbide, silicon, metal, quartz, ZnO, spinel, or glassy/amorphous material)substrate for epitaxial growth of GaN
  The substrate as claimed in claim 2, wherein the support material is a material chosen from: sapphire; silicon carbide; silicon; metal; quartz; zin c oxide (ZnO); a spinel; or a glassy or amorphous material.
3. 5
  Dependent← claim 2silica glass (strain point ≥ 550 °C)substrate for epitaxial growth of GaN
  The substrate as claimed in claim 2, wherein the support material is a silica glass, the strain point of which is equal to or above 550 °C.
4. 6
  Dependent← claim 2substrate for epitaxial growth of GaN
  The substrate as claimed in claim 2, wherein at least one sublayer is present between the support material and the intermediate layer.
5. 8
  Dependent← claim 2substrate for epitaxial growth of GaN
  The substrate as claimed in claim 2, wherein the intermediate layer is present beneath the zinc oxide comprising layer in direct contact therewith.
6. 10
  Dependent← claim 2zinc tin oxide (intermediate layer)substrate for epitaxial growth of GaN
  The substrate as claimed in claim 2, wherein the intermediate layer is a layer comprised of zin c tin oxides.
7. 12
  Dependent← claim 2ZnOsubstrate for epitaxial growth of GaN
  The substrate as claimed in claim 2, wherein the zin c oxide comprising layer is a layer consisting of zin c oxide, in a wurtzite-type structure.
8. 13
  Dependent← claim 2ZnOsubstrate for epitaxial growth of GaN
  The substrate as claimed in claim 2, wherein the zin c oxide comprising layer is the ﬁnal layer of the multilayer.
9. 14
  Dependent← claim 2ZnOsubstrate for epitaxial growth of GaN
  The substrate as claimed in claim 2, wherein the thickness of the zinc oxide comprising layer is between 10 and 500 nm.
10. 15
  Dependent← claim 2intermediate layer comprising oxides of at least two elements from Sn, Zn, Ga, Sbsubstrate for epitaxial growth of GaN
  The substrate as claimed in claim 2, wherein the thickness of the intermediate layer is between 2 and 100 nm.
11. 16
  Dependent← claim 2III-N or II-VI semiconductor structuresubstrate for epitaxial growth of GaN
  The substrate as claimed in claim 2, coated with a 111 -N or 1I -VI semiconductor structure.
9
Independent
canceled
20
IndependentZnOintermediate layer comprising oxides of at least two elements from Sn, Zn, Ga, Sbsubstrate for epitaxial growth of GaN
A process for obtaining a substrate as --aimedi Elaim2 comprising a support material coated on at least one face thereof with at least one multilayered stack comprising at least one zin c oxide comprising layer, wherein at least one intermediate la y er is present between the support material and said at least one zin c oxide comprising layer, said at least one intermediate layer comprising oxides of at least two elements selected from the group consisting of tin (Sn), zin c (Zn), gallium (Ga) and antimony (Sb), wherein said at least one zin c oxide comprising layer and said at least one intermediate layer are deposited by sputtering, wherein said depositing the intermediate l a yer produces an amorphous la y er.
21
Independent
canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

substrate for epitaxial growth of GaN

III-N or II-VI semiconductor structuresemiconductor overlayer

ZnOzinc oxide seed layer

intermediate layer comprising oxides of at least two elements from Sn, Zn, Ga, Sbintermediate layer

alkali-ion barrier sublayer (SiOC, Si₃N4, SiO2, TiN, Al₂O₃ or mixtures)barrier sublayer optional

support material (sapphire, silicon carbide, silicon, metal, quartz, ZnO, spinel, or glassy/amorphous material)support material

Materials

Materials described outside the worked examples.

zinc oxide

ZnO

Seed Layer Template

intermediate layer comprising oxides of at least two elements from Sn, Zn, Ga, Sb

Intermediate Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Sputtering Deposition

Step 1

Process details

method:sputtering

layers deposited:zinc oxide comprising layer, intermediate layer

intermediate layer state:amorphous as-deposited

Materials:ZnO

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
amorphous phase fraction of intermediate layer before ZnO deposition	≥90% by weight (preferably ≥95%, even ≥99%) wt%	intermediate layer comprising oxides of at least two elements from Sn, Zn, Ga, Sb
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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