Patent
US 12,410,101 B2GALLIUM NITRIDE-BASED SINTERED BODY AND METHOD FOR MANUFACTURING SAME
Masami Mesuda, Hideto Kuramochi, Yuya Tsuchida
TOSOH CORPORATION, Shunan (JP)·Sep. 9, 2025·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,410,101 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a hot press mold used in Examples and Comparative Examples.
FIG. 2 illustrates a sleeve divided into four pieces used in Examples.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based sintered body, wherein the gallium nitride-based sintered body has an oxygen content of 1 atm % or less and an average particle size (D₅₀) of from 5 µm to 150 µm, and wherein the gallium nitride-based sintered body has a deflective strength of at least 50 MPa.
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body comprises elements Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd as impurities in a total amount of less than 10 wt ppm.
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body comprises Mg and Si as impurities in a total amount of less than 5 wt ppm. B₂ — Fractured — Fractured 12 Fractured 15 Fractured — Fractured — Fractured Nil Comp. Ex. 4 <0.01 <0.005 <0.005 0.47 1.8 <0.005 <0.005 0.92 <0.005
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body has a content of at least one Group 13 element selected from the group consisting of boron, aluminum and indium of from 0.001 atm % to 25 atm %.
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body has a content of at least one dopant selected from the group consisting of Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd of from 1 wt ppm to 100,000 wt ppm.
Layer stacks claimed or described, ordered top of device to substrate.
sputtering target
Materials described outside the worked examples.
gallium nitride-based sintered body
GaN
Group 13 element (boron, aluminum, or indium)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Deflective Strength | ≥ 50 MPa | GaN |
Density | 3–5.4 g/cm3 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,410,101 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a hot press mold used in Examples and Comparative Examples.
FIG. 2 illustrates a sleeve divided into four pieces used in Examples.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based sintered body, wherein the gallium nitride-based sintered body has an oxygen content of 1 atm % or less and an average particle size (D₅₀) of from 5 µm to 150 µm, and wherein the gallium nitride-based sintered body has a deflective strength of at least 50 MPa.
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body comprises elements Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd as impurities in a total amount of less than 10 wt ppm.
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body comprises Mg and Si as impurities in a total amount of less than 5 wt ppm. B₂ — Fractured — Fractured 12 Fractured 15 Fractured — Fractured — Fractured Nil Comp. Ex. 4 <0.01 <0.005 <0.005 0.47 1.8 <0.005 <0.005 0.92 <0.005
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body has a content of at least one Group 13 element selected from the group consisting of boron, aluminum and indium of from 0.001 atm % to 25 atm %.
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body has a content of at least one dopant selected from the group consisting of Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd of from 1 wt ppm to 100,000 wt ppm.
Layer stacks claimed or described, ordered top of device to substrate.
sputtering target
Materials described outside the worked examples.
gallium nitride-based sintered body
GaN
Group 13 element (boron, aluminum, or indium)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Deflective Strength | ≥ 50 MPa | GaN |
Density | 3–5.4 g/cm3 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,410,101 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a hot press mold used in Examples and Comparative Examples.
FIG. 2 illustrates a sleeve divided into four pieces used in Examples.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based sintered body, wherein the gallium nitride-based sintered body has an oxygen content of 1 atm % or less and an average particle size (D₅₀) of from 5 µm to 150 µm, and wherein the gallium nitride-based sintered body has a deflective strength of at least 50 MPa.
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body comprises elements Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd as impurities in a total amount of less than 10 wt ppm.
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body comprises Mg and Si as impurities in a total amount of less than 5 wt ppm. B₂ — Fractured — Fractured 12 Fractured 15 Fractured — Fractured — Fractured Nil Comp. Ex. 4 <0.01 <0.005 <0.005 0.47 1.8 <0.005 <0.005 0.92 <0.005
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body has a content of at least one Group 13 element selected from the group consisting of boron, aluminum and indium of from 0.001 atm % to 25 atm %.
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body has a content of at least one dopant selected from the group consisting of Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd of from 1 wt ppm to 100,000 wt ppm.
Layer stacks claimed or described, ordered top of device to substrate.
sputtering target
Materials described outside the worked examples.
gallium nitride-based sintered body
GaN
Group 13 element (boron, aluminum, or indium)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Deflective Strength | ≥ 50 MPa | GaN |
Density | 3–5.4 g/cm3 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,410,101 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a hot press mold used in Examples and Comparative Examples.
FIG. 2 illustrates a sleeve divided into four pieces used in Examples.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based sintered body, wherein the gallium nitride-based sintered body has an oxygen content of 1 atm % or less and an average particle size (D₅₀) of from 5 µm to 150 µm, and wherein the gallium nitride-based sintered body has a deflective strength of at least 50 MPa.
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body comprises elements Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd as impurities in a total amount of less than 10 wt ppm.
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body comprises Mg and Si as impurities in a total amount of less than 5 wt ppm. B₂ — Fractured — Fractured 12 Fractured 15 Fractured — Fractured — Fractured Nil Comp. Ex. 4 <0.01 <0.005 <0.005 0.47 1.8 <0.005 <0.005 0.92 <0.005
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body has a content of at least one Group 13 element selected from the group consisting of boron, aluminum and indium of from 0.001 atm % to 25 atm %.
The gallium nitride-based sintered body according to claim 1, wherein the gallium nitride-based sintered body has a content of at least one dopant selected from the group consisting of Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd of from 1 wt ppm to 100,000 wt ppm.
Layer stacks claimed or described, ordered top of device to substrate.
sputtering target
Materials described outside the worked examples.
gallium nitride-based sintered body
GaN
Group 13 element (boron, aluminum, or indium)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Deflective Strength | ≥ 50 MPa | GaN |
Density | 3–5.4 g/cm3 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
dopant (Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn, or Cd)
Oxygen Content | ≤ 1 atm % | GaN |
Average Particle Size D50 | 5–150 µm | GaN |
Xrd Peak Ratio Ga Metal To GaN | ≤ 10 % | GaN |
Pressure | 11 — 0.003 atm | — |
Pressure | ≥ 1 pa | — |
Thickness | ≥ 150 cm | — |
Pressure | ≤ 1 atm | — |
Thickness | ≤ 150 µm | — |
Pressure | ≤ 0.5 atm | — |
Pressure | ≤ 0.3 atm | — |
Pressure | ≤ 0.2 atm | — |
Pressure | ≤ 0.1 atm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 80 µm | — |
Pressure | ≤ 25 atm | — |
Temperature | ≤ 1200 °C | — |
Pressure | ≤ 1 MPa | — |
Pressure | ≤ 90 MPa | — |
Duration | ≤ 5 hours | — |
Duration | ≤ 4 hours | — |
Duration | ≤ 2 hours | — |
Pressure | ≤ 10 Pa | — |
Temperature | ≤ 1150 °C | — |
Pressure | ≤ 3 atm | — |
Pressure | ≤ 1.5 atm | — |
Duration | ≤ 1 hour | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 9 µm | — |
Pressure | ≥ 60 MPa | — |
Pressure | ≥ 70 MPa | — |
Pressure | ≥ 0.001 atm | — |
Thickness | ≥ 175 cm | — |
Thickness | ≥ 200 cm | — |
Pressure | ≥ 0.1 atm | — |
Temperature | ≥ 1e+60 °C | — |
Pressure | ≥ 30 MPa | — |
Pressure | ≥ 40 MPa | — |
Duration | ≥ 2 hours | — |
Duration | ≥ 3 hours | — |
Thickness | ≥ 0.2 mm | — |
Temperature | ≥ 1e+90 °C | — |
Duration | ≥ 15 minutes | — |
Cited non-patent literature · 4
dopant (Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn, or Cd)
Oxygen Content | ≤ 1 atm % | GaN |
Average Particle Size D50 | 5–150 µm | GaN |
Xrd Peak Ratio Ga Metal To GaN | ≤ 10 % | GaN |
Pressure | 11 — 0.003 atm | — |
Pressure | ≥ 1 pa | — |
Thickness | ≥ 150 cm | — |
Pressure | ≤ 1 atm | — |
Thickness | ≤ 150 µm | — |
Pressure | ≤ 0.5 atm | — |
Pressure | ≤ 0.3 atm | — |
Pressure | ≤ 0.2 atm | — |
Pressure | ≤ 0.1 atm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 80 µm | — |
Pressure | ≤ 25 atm | — |
Temperature | ≤ 1200 °C | — |
Pressure | ≤ 1 MPa | — |
Pressure | ≤ 90 MPa | — |
Duration | ≤ 5 hours | — |
Duration | ≤ 4 hours | — |
Duration | ≤ 2 hours | — |
Pressure | ≤ 10 Pa | — |
Temperature | ≤ 1150 °C | — |
Pressure | ≤ 3 atm | — |
Pressure | ≤ 1.5 atm | — |
Duration | ≤ 1 hour | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 9 µm | — |
Pressure | ≥ 60 MPa | — |
Pressure | ≥ 70 MPa | — |
Pressure | ≥ 0.001 atm | — |
Thickness | ≥ 175 cm | — |
Thickness | ≥ 200 cm | — |
Pressure | ≥ 0.1 atm | — |
Temperature | ≥ 1e+60 °C | — |
Pressure | ≥ 30 MPa | — |
Pressure | ≥ 40 MPa | — |
Duration | ≥ 2 hours | — |
Duration | ≥ 3 hours | — |
Thickness | ≥ 0.2 mm | — |
Temperature | ≥ 1e+90 °C | — |
Duration | ≥ 15 minutes | — |
Cited non-patent literature · 4
dopant (Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn, or Cd)
Oxygen Content | ≤ 1 atm % | GaN |
Average Particle Size D50 | 5–150 µm | GaN |
Xrd Peak Ratio Ga Metal To GaN | ≤ 10 % | GaN |
Pressure | 11 — 0.003 atm | — |
Pressure | ≥ 1 pa | — |
Thickness | ≥ 150 cm | — |
Pressure | ≤ 1 atm | — |
Thickness | ≤ 150 µm | — |
Pressure | ≤ 0.5 atm | — |
Pressure | ≤ 0.3 atm | — |
Pressure | ≤ 0.2 atm | — |
Pressure | ≤ 0.1 atm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 80 µm | — |
Pressure | ≤ 25 atm | — |
Temperature | ≤ 1200 °C | — |
Pressure | ≤ 1 MPa | — |
Pressure | ≤ 90 MPa | — |
Duration | ≤ 5 hours | — |
Duration | ≤ 4 hours | — |
Duration | ≤ 2 hours | — |
Pressure | ≤ 10 Pa | — |
Temperature | ≤ 1150 °C | — |
Pressure | ≤ 3 atm | — |
Pressure | ≤ 1.5 atm | — |
Duration | ≤ 1 hour | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 9 µm | — |
Pressure | ≥ 60 MPa | — |
Pressure | ≥ 70 MPa | — |
Pressure | ≥ 0.001 atm | — |
Thickness | ≥ 175 cm | — |
Thickness | ≥ 200 cm | — |
Pressure | ≥ 0.1 atm | — |
Temperature | ≥ 1e+60 °C | — |
Pressure | ≥ 30 MPa | — |
Pressure | ≥ 40 MPa | — |
Duration | ≥ 2 hours | — |
Duration | ≥ 3 hours | — |
Thickness | ≥ 0.2 mm | — |
Temperature | ≥ 1e+90 °C | — |
Duration | ≥ 15 minutes | — |
Cited non-patent literature · 4
dopant (Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn, or Cd)
Oxygen Content | ≤ 1 atm % | GaN |
Average Particle Size D50 | 5–150 µm | GaN |
Xrd Peak Ratio Ga Metal To GaN | ≤ 10 % | GaN |
Pressure | 11 — 0.003 atm | — |
Pressure | ≥ 1 pa | — |
Thickness | ≥ 150 cm | — |
Pressure | ≤ 1 atm | — |
Thickness | ≤ 150 µm | — |
Pressure | ≤ 0.5 atm | — |
Pressure | ≤ 0.3 atm | — |
Pressure | ≤ 0.2 atm | — |
Pressure | ≤ 0.1 atm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 80 µm | — |
Pressure | ≤ 25 atm | — |
Temperature | ≤ 1200 °C | — |
Pressure | ≤ 1 MPa | — |
Pressure | ≤ 90 MPa | — |
Duration | ≤ 5 hours | — |
Duration | ≤ 4 hours | — |
Duration | ≤ 2 hours | — |
Pressure | ≤ 10 Pa | — |
Temperature | ≤ 1150 °C | — |
Pressure | ≤ 3 atm | — |
Pressure | ≤ 1.5 atm | — |
Duration | ≤ 1 hour | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 9 µm | — |
Pressure | ≥ 60 MPa | — |
Pressure | ≥ 70 MPa | — |
Pressure | ≥ 0.001 atm | — |
Thickness | ≥ 175 cm | — |
Thickness | ≥ 200 cm | — |
Pressure | ≥ 0.1 atm | — |
Temperature | ≥ 1e+60 °C | — |
Pressure | ≥ 30 MPa | — |
Pressure | ≥ 40 MPa | — |
Duration | ≥ 2 hours | — |
Duration | ≥ 3 hours | — |
Thickness | ≥ 0.2 mm | — |
Temperature | ≥ 1e+90 °C | — |
Duration | ≥ 15 minutes | — |
Cited non-patent literature · 4