Patent
US 11,802,049 B2GALLIUM NITRIDE-BASED SINTERED COMPACT AND METHOD FOR MANUFACTURING SAME
Masami Mesuda, Hideto Kuramochi
TOSOH CORPORATION, Shunan (JP)·Oct. 31, 2023·US
Copyright © 2026 Matter42. All rights reserved.
manganese sulfide layer
MnS
Half value width of 2θ/θ measurement peak of (002) plane – claimed maximum | ≤ 0.3 | GaN |
Minimum oxygen content in GaN film – claimed maximum | ≤ 5e+21 | GaN |
Surface roughness Ra of GaN film – claimed maximum | ≤ 10 | GaN |
Density of GaN sintered body – Example 1 | 3.2 | GaN |
Oxygen content of GaN sintered body – Example 1 | 0.9 | GaN |
Resistivity of GaN sintered body – Example 1 | 0.03 | GaN |
Density of GaN sintered body – Example 2 | 4.2 | GaN |
Oxygen content of GaN sintered body – Example 2 | 0.5 | GaN |
Resistivity of GaN sintered body – Example 2 | 0.007 | GaN |
Density of GaN sintered body – Example 3 | 4.5 | GaN |
Oxygen content of GaN sintered body – Example 3 | 0.3 | GaN |
Resistivity of GaN sintered body – Example 3 | 0.002 | GaN |
Density of GaN sintered body – Example 4 | 4.8 | GaN |
Oxygen content of GaN sintered body – Example 4 | 0.4 | GaN |
Resistivity of GaN sintered body – Example 4 | 0.001 | GaN |
Density of GaN sintered body – Example 5 | 3.5 | GaN |
Oxygen content of GaN sintered body – Example 5 | 0.4 | GaN |
Resistivity of GaN sintered body – Example 5 | 0.01 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 1 | 1600 | GaN |
Half value width of (002) plane – Reference Example 1 | 0.26 | GaN |
Minimum oxygen content in film (5–30 nm from interface) – Reference Example 1 | 25 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 2 | 1300 | GaN |
Half value width of (002) plane – Reference Example 2 | 0.22 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 3 | 760 | GaN |
Half value width of (002) plane – Reference Example 3 | 0.14 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 4 | 7000 | GaN |
Half value width of (002) plane – Reference Example 4 | 0.12 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 5 | 680 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 10 | 2100 | GaN |
Half value width of (002) plane – Reference Example 10 | 0.11 | GaN |
Minimum oxygen content in film – Reference Example 10 | 2.4 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 12 | 3420 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 13 | 2220 | GaN |
Thickness | 5–30 nm | — |
Pressure | ≤ 1 Pa | — |
Pressure | ≤ 1 MPa | — |
Pressure | ≥ 1 pa | — |
Thickness | ≤ 10 nm | — |
Pressure | ≤ 0.3 Pa | — |
Cited non-patent literature · 1
manganese sulfide layer
MnS
Half value width of 2θ/θ measurement peak of (002) plane – claimed maximum | ≤ 0.3 | GaN |
Minimum oxygen content in GaN film – claimed maximum | ≤ 5e+21 | GaN |
Surface roughness Ra of GaN film – claimed maximum | ≤ 10 | GaN |
Density of GaN sintered body – Example 1 | 3.2 | GaN |
Oxygen content of GaN sintered body – Example 1 | 0.9 | GaN |
Resistivity of GaN sintered body – Example 1 | 0.03 | GaN |
Density of GaN sintered body – Example 2 | 4.2 | GaN |
Oxygen content of GaN sintered body – Example 2 | 0.5 | GaN |
Resistivity of GaN sintered body – Example 2 | 0.007 | GaN |
Density of GaN sintered body – Example 3 | 4.5 | GaN |
Oxygen content of GaN sintered body – Example 3 | 0.3 | GaN |
Resistivity of GaN sintered body – Example 3 | 0.002 | GaN |
Density of GaN sintered body – Example 4 | 4.8 | GaN |
Oxygen content of GaN sintered body – Example 4 | 0.4 | GaN |
Resistivity of GaN sintered body – Example 4 | 0.001 | GaN |
Density of GaN sintered body – Example 5 | 3.5 | GaN |
Oxygen content of GaN sintered body – Example 5 | 0.4 | GaN |
Resistivity of GaN sintered body – Example 5 | 0.01 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 1 | 1600 | GaN |
Half value width of (002) plane – Reference Example 1 | 0.26 | GaN |
Minimum oxygen content in film (5–30 nm from interface) – Reference Example 1 | 25 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 2 | 1300 | GaN |
Half value width of (002) plane – Reference Example 2 | 0.22 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 3 | 760 | GaN |
Half value width of (002) plane – Reference Example 3 | 0.14 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 4 | 7000 | GaN |
Half value width of (002) plane – Reference Example 4 | 0.12 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 5 | 680 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 10 | 2100 | GaN |
Half value width of (002) plane – Reference Example 10 | 0.11 | GaN |
Minimum oxygen content in film – Reference Example 10 | 2.4 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 12 | 3420 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 13 | 2220 | GaN |
Thickness | 5–30 nm | — |
Pressure | ≤ 1 Pa | — |
Pressure | ≤ 1 MPa | — |
Pressure | ≥ 1 pa | — |
Thickness | ≤ 10 nm | — |
Pressure | ≤ 0.3 Pa | — |
Cited non-patent literature · 1
manganese sulfide layer
MnS
Half value width of 2θ/θ measurement peak of (002) plane – claimed maximum | ≤ 0.3 | GaN |
Minimum oxygen content in GaN film – claimed maximum | ≤ 5e+21 | GaN |
Surface roughness Ra of GaN film – claimed maximum | ≤ 10 | GaN |
Density of GaN sintered body – Example 1 | 3.2 | GaN |
Oxygen content of GaN sintered body – Example 1 | 0.9 | GaN |
Resistivity of GaN sintered body – Example 1 | 0.03 | GaN |
Density of GaN sintered body – Example 2 | 4.2 | GaN |
Oxygen content of GaN sintered body – Example 2 | 0.5 | GaN |
Resistivity of GaN sintered body – Example 2 | 0.007 | GaN |
Density of GaN sintered body – Example 3 | 4.5 | GaN |
Oxygen content of GaN sintered body – Example 3 | 0.3 | GaN |
Resistivity of GaN sintered body – Example 3 | 0.002 | GaN |
Density of GaN sintered body – Example 4 | 4.8 | GaN |
Oxygen content of GaN sintered body – Example 4 | 0.4 | GaN |
Resistivity of GaN sintered body – Example 4 | 0.001 | GaN |
Density of GaN sintered body – Example 5 | 3.5 | GaN |
Oxygen content of GaN sintered body – Example 5 | 0.4 | GaN |
Resistivity of GaN sintered body – Example 5 | 0.01 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 1 | 1600 | GaN |
Half value width of (002) plane – Reference Example 1 | 0.26 | GaN |
Minimum oxygen content in film (5–30 nm from interface) – Reference Example 1 | 25 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 2 | 1300 | GaN |
Half value width of (002) plane – Reference Example 2 | 0.22 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 3 | 760 | GaN |
Half value width of (002) plane – Reference Example 3 | 0.14 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 4 | 7000 | GaN |
Half value width of (002) plane – Reference Example 4 | 0.12 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 5 | 680 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 10 | 2100 | GaN |
Half value width of (002) plane – Reference Example 10 | 0.11 | GaN |
Minimum oxygen content in film – Reference Example 10 | 2.4 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 12 | 3420 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 13 | 2220 | GaN |
Thickness | 5–30 nm | — |
Pressure | ≤ 1 Pa | — |
Pressure | ≤ 1 MPa | — |
Pressure | ≥ 1 pa | — |
Thickness | ≤ 10 nm | — |
Pressure | ≤ 0.3 Pa | — |
Cited non-patent literature · 1
manganese sulfide layer
MnS
Half value width of 2θ/θ measurement peak of (002) plane – claimed maximum | ≤ 0.3 | GaN |
Minimum oxygen content in GaN film – claimed maximum | ≤ 5e+21 | GaN |
Surface roughness Ra of GaN film – claimed maximum | ≤ 10 | GaN |
Density of GaN sintered body – Example 1 | 3.2 | GaN |
Oxygen content of GaN sintered body – Example 1 | 0.9 | GaN |
Resistivity of GaN sintered body – Example 1 | 0.03 | GaN |
Density of GaN sintered body – Example 2 | 4.2 | GaN |
Oxygen content of GaN sintered body – Example 2 | 0.5 | GaN |
Resistivity of GaN sintered body – Example 2 | 0.007 | GaN |
Density of GaN sintered body – Example 3 | 4.5 | GaN |
Oxygen content of GaN sintered body – Example 3 | 0.3 | GaN |
Resistivity of GaN sintered body – Example 3 | 0.002 | GaN |
Density of GaN sintered body – Example 4 | 4.8 | GaN |
Oxygen content of GaN sintered body – Example 4 | 0.4 | GaN |
Resistivity of GaN sintered body – Example 4 | 0.001 | GaN |
Density of GaN sintered body – Example 5 | 3.5 | GaN |
Oxygen content of GaN sintered body – Example 5 | 0.4 | GaN |
Resistivity of GaN sintered body – Example 5 | 0.01 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 1 | 1600 | GaN |
Half value width of (002) plane – Reference Example 1 | 0.26 | GaN |
Minimum oxygen content in film (5–30 nm from interface) – Reference Example 1 | 25 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 2 | 1300 | GaN |
Half value width of (002) plane – Reference Example 2 | 0.22 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 3 | 760 | GaN |
Half value width of (002) plane – Reference Example 3 | 0.14 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 4 | 7000 | GaN |
Half value width of (002) plane – Reference Example 4 | 0.12 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 5 | 680 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 10 | 2100 | GaN |
Half value width of (002) plane – Reference Example 10 | 0.11 | GaN |
Minimum oxygen content in film – Reference Example 10 | 2.4 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 12 | 3420 | GaN |
I(002)/I(101) XRD intensity ratio – Reference Example 13 | 2220 | GaN |
Thickness | 5–30 nm | — |
Pressure | ≤ 1 Pa | — |
Pressure | ≤ 1 MPa | — |
Pressure | ≥ 1 pa | — |
Thickness | ≤ 10 nm | — |
Pressure | ≤ 0.3 Pa | — |
Cited non-patent literature · 1