Patent
US 8,216,367Method for Production of Silicon Carbide Layer, Gallium Nitride Semiconductor Device and Silicon substrate
Takashi Udagawa
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,216,367Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic explanatory view showing the irradiation angle of an 20 electron beam and the spraying angle of a hydrocarbon-based gas both relative to a substrate surface. Best Mode for carrying out the Invention: A cubic silicon carbide crystal layer, particularly 3C-silicon carbide …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a silicon carbide layer on a surface of a silicon substrate, comprising the step of: irradiating the surface of the silicon substrate heated in high vacuum at a temperature in a range of from 500 * C to 1050 * C with a hydrocarbon-based gas as well as an electron beam to form a cubic silicon carbide layer on the silicon substrate surface.
A method according to claim 1, wherein angles of irradiating with the hydrocarbon-based gas and electron beam differ from each other.
A method according to any one of claims 1 to 3, wherein the energy beam has an acceleration energy in a range of from 150 eV to 500 eV and a density in a range of from 1 x 10 11 electrons-cm- 2 to 5 x 10 13 electrons -cm 2
A gallium nitride-based semiconductor device fabricated as formed on the silicon carbide layer according to any one of claims 1 to 4.
A silicon substrate having formed on a surface thereof the silicon carbide layer according to any one of claims 1 to 4.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based semiconductor device
silicon substrate with silicon carbide layer
Materials described outside the worked examples.
silicon substrate
Si
hydrocarbon-based gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
cubic SiC (3C-SiC) lattice constant | 0.436 nm | 3C-SiC |
cubic GaN lattice constant |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,216,367Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic explanatory view showing the irradiation angle of an 20 electron beam and the spraying angle of a hydrocarbon-based gas both relative to a substrate surface. Best Mode for carrying out the Invention: A cubic silicon carbide crystal layer, particularly 3C-silicon carbide …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a silicon carbide layer on a surface of a silicon substrate, comprising the step of: irradiating the surface of the silicon substrate heated in high vacuum at a temperature in a range of from 500 * C to 1050 * C with a hydrocarbon-based gas as well as an electron beam to form a cubic silicon carbide layer on the silicon substrate surface.
A method according to claim 1, wherein angles of irradiating with the hydrocarbon-based gas and electron beam differ from each other.
A method according to any one of claims 1 to 3, wherein the energy beam has an acceleration energy in a range of from 150 eV to 500 eV and a density in a range of from 1 x 10 11 electrons-cm- 2 to 5 x 10 13 electrons -cm 2
A gallium nitride-based semiconductor device fabricated as formed on the silicon carbide layer according to any one of claims 1 to 4.
A silicon substrate having formed on a surface thereof the silicon carbide layer according to any one of claims 1 to 4.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based semiconductor device
silicon substrate with silicon carbide layer
Materials described outside the worked examples.
silicon substrate
Si
hydrocarbon-based gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
cubic SiC (3C-SiC) lattice constant | 0.436 nm | 3C-SiC |
cubic GaN lattice constant |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,216,367Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic explanatory view showing the irradiation angle of an 20 electron beam and the spraying angle of a hydrocarbon-based gas both relative to a substrate surface. Best Mode for carrying out the Invention: A cubic silicon carbide crystal layer, particularly 3C-silicon carbide …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a silicon carbide layer on a surface of a silicon substrate, comprising the step of: irradiating the surface of the silicon substrate heated in high vacuum at a temperature in a range of from 500 * C to 1050 * C with a hydrocarbon-based gas as well as an electron beam to form a cubic silicon carbide layer on the silicon substrate surface.
A method according to claim 1, wherein angles of irradiating with the hydrocarbon-based gas and electron beam differ from each other.
A method according to any one of claims 1 to 3, wherein the energy beam has an acceleration energy in a range of from 150 eV to 500 eV and a density in a range of from 1 x 10 11 electrons-cm- 2 to 5 x 10 13 electrons -cm 2
A gallium nitride-based semiconductor device fabricated as formed on the silicon carbide layer according to any one of claims 1 to 4.
A silicon substrate having formed on a surface thereof the silicon carbide layer according to any one of claims 1 to 4.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based semiconductor device
silicon substrate with silicon carbide layer
Materials described outside the worked examples.
silicon substrate
Si
hydrocarbon-based gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
cubic SiC (3C-SiC) lattice constant | 0.436 nm | 3C-SiC |
cubic GaN lattice constant |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,216,367Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic explanatory view showing the irradiation angle of an 20 electron beam and the spraying angle of a hydrocarbon-based gas both relative to a substrate surface. Best Mode for carrying out the Invention: A cubic silicon carbide crystal layer, particularly 3C-silicon carbide …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a silicon carbide layer on a surface of a silicon substrate, comprising the step of: irradiating the surface of the silicon substrate heated in high vacuum at a temperature in a range of from 500 * C to 1050 * C with a hydrocarbon-based gas as well as an electron beam to form a cubic silicon carbide layer on the silicon substrate surface.
A method according to claim 1, wherein angles of irradiating with the hydrocarbon-based gas and electron beam differ from each other.
A method according to any one of claims 1 to 3, wherein the energy beam has an acceleration energy in a range of from 150 eV to 500 eV and a density in a range of from 1 x 10 11 electrons-cm- 2 to 5 x 10 13 electrons -cm 2
A gallium nitride-based semiconductor device fabricated as formed on the silicon carbide layer according to any one of claims 1 to 4.
A silicon substrate having formed on a surface thereof the silicon carbide layer according to any one of claims 1 to 4.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based semiconductor device
silicon substrate with silicon carbide layer
Materials described outside the worked examples.
silicon substrate
Si
hydrocarbon-based gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
cubic SiC (3C-SiC) lattice constant | 0.436 nm | 3C-SiC |
cubic GaN lattice constant |
Related documents with shared materials, methods, properties, or citations.
cubic silicon carbide
3C-SiC
gallium nitride
GaN
| 0.451 nm |
GaN |
cubic SiC (110) plane d-spacing | 0.308 nm | 3C-SiC |
— | 150–500 eV | — |
cubic silicon carbide
3C-SiC
gallium nitride
GaN
| 0.451 nm |
GaN |
cubic SiC (110) plane d-spacing | 0.308 nm | 3C-SiC |
— | 150–500 eV | — |
cubic silicon carbide
3C-SiC
gallium nitride
GaN
| 0.451 nm |
GaN |
cubic SiC (110) plane d-spacing | 0.308 nm | 3C-SiC |
— | 150–500 eV | — |
cubic silicon carbide
3C-SiC
gallium nitride
GaN
| 0.451 nm |
GaN |
cubic SiC (110) plane d-spacing | 0.308 nm | 3C-SiC |
— | 150–500 eV | — |