Patent
US 10,937,649Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN and Their Alloys with A l N
Neeraj Nepal
US
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Patent
Atlas literature
Patent
US 10,937,649Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows variation of growth rate (GR) and In/N ratio with a trimethylindium (TMI) pulse of 0.06 seconds. [0005]
FIG. 2 depicts the x-ray diffraction (XRD) peaks from three of the samples-namely InN (6 0 nm) on GaN/A 1 203 template with T g 183 ° C (top) and on a-plane A …
FIG. 3 shows a schematic of the possible structure of a face centered cubic (fc c) InN phase and how it would align to an a-plane sapphire unit cell. [0007]
FIG. 4 depicts the variation of Al content in A lX Ini X N with the A l N/InN cycles ratios in the whole range of x as determined by x-ray photoelectron …
FIG. 5 depicts variation of Ga content in In x Gai x N with GaN/InN cycles ratios in the range x as determined by x-ray photoelectron spectroscopy. InN and GaN …
FIG. 6 depicts variation of Ga content in A lX Gai x N with A l N/GaN cycles and ratios in the range of x as determined by x-ray photoelectron spectroscopy. A …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Y. Nanishi, Y. Saito, and T. Yamaguchi, Jpn. J. Appl. Phys. 42, 2549 (2003) and the references therein.
A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, J. Appl. Phys. 94, 2779 (2003).
N. Dietz, M. Alevli, V. Woods, M. Strassburg, H. Kang, and I. T. Ferguson, Phys. Status Solidi B 242, 2985 (2005).
R. P. Bhatta, B. D. Tho m s, A. Weerasekera, A. G. U. Perera, M. Alevli, and N. Dietz, J. Vac. Sci. Technol. 25, 967 (2007).
Shou-Yi Kuo, Fang-I Lai, Wei-Chun Chen, Woei-Tyng Lin, Chien-Nan Hsiao, Hsin-I Lin, and Han-Chang Pan, Diamond & Related Materials 20, 1188 (2011).
M. A. Hafez and H. E. Elsayed-Ali, J. Vac. Sci. Technol. A 27, 696 (2009).
K. S. Boutros, F. G. McIntosh, J. C. Roberts, S. M. Bedair, E. L. Piner, and N. A. El- Masry. Appl. Phys. Lett. 67, 1856 (1995).
C. Ozgit, I. Donmez, M. Alevli, and N. Biyikli, J. Vac. Sci. Technol. A 30, 01 A₁₂₄ (2012).
N. H. Karam, T. Parodos, P. Colter, D. McNulty, W. Rowland, J. Schetzina, N. El-Masry, and S. M. Bedair, Appl. Phys. Lett. 67, 94 (1995).
K. Kim, N. Kwak, and S. Lee, Electron. Mater. Lett. 5, 83 (2009).
M. Alevli, C. Ozgit, I. Donmez, and N. Biyikli, Phys. Status Solidi A 209, 266 (2012).
O. Ambacher, M. S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R. A. Fischer, A. Miehr, A. Bergmaier, and G. Dollinger, J. Vac. Sci. Technol. B 14, 3532 (1996). InN dissociation temp 630 13. M. Y. Duan, L He, M. Xu, M. Y. Xu, Shuyan Xu, and K. Ostrikov, Phys. Rev. B 81, 033102 (2010).
A. Yamamoto, T. Shin-ya, T. Sugiura, A. Hashimoto, J. Cryst. Growth, 189/190, 461 (1998).
J. G. Lozano, F. M. Morales, R. Garcia, D. Gonzalez, V. Lebedev, Ch. Y. Wang, V. Cimalla, and O Ambacher, Appl. Phys. Lett. 90, 091901 (2007).
A. Janotti and C, G. Van de Walle, Appl. Phys. Lett. 92, 032104 (2008).
L. F. J. Piper, T. D. Veal, M. Walker, I. Mahboob, C. F. McConville, H. Lu, and W. J. Schaff, J. Vac. Sci. Technol. A 23, 617 (2005) 18. C. G. Van de Walle, J. L. Lyons, and A. Janotti, Solidi A 207, 1024 (2010).
T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
M. C. Lee, H. C. Lin, Y. C. Pan, C. K. Shu, J. Ou, W. H. Chen, and W. K. Chen, Appl. Phys. Lett. 73, 2606 (1998).
A.P. Lima, A. Tabata, J.R. Leite, S. Kaiser, D. Schikora, B. Schottker, T. Frey, D.J. As, and K. Lischka, J. Cryst. Growth, 201/202, 396 (1999). Claims What is claimed is:
Materials described outside the worked examples.
InN
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts the x-ray diffraction (XRD) peaks from three of the samples-namely InN (6 0 nm) on GaN/A 1 203 template with T g 183 ° C (top) and on a-plane A …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
d-spacing of first XRD peak, FCC InN on a-plane sapphire at 183 deg C | 6.68 Angstrom | InN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,937,649Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows variation of growth rate (GR) and In/N ratio with a trimethylindium (TMI) pulse of 0.06 seconds. [0005]
FIG. 2 depicts the x-ray diffraction (XRD) peaks from three of the samples-namely InN (6 0 nm) on GaN/A 1 203 template with T g 183 ° C (top) and on a-plane A …
FIG. 3 shows a schematic of the possible structure of a face centered cubic (fc c) InN phase and how it would align to an a-plane sapphire unit cell. [0007]
FIG. 4 depicts the variation of Al content in A lX Ini X N with the A l N/InN cycles ratios in the whole range of x as determined by x-ray photoelectron …
FIG. 5 depicts variation of Ga content in In x Gai x N with GaN/InN cycles ratios in the range x as determined by x-ray photoelectron spectroscopy. InN and GaN …
FIG. 6 depicts variation of Ga content in A lX Gai x N with A l N/GaN cycles and ratios in the range of x as determined by x-ray photoelectron spectroscopy. A …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Y. Nanishi, Y. Saito, and T. Yamaguchi, Jpn. J. Appl. Phys. 42, 2549 (2003) and the references therein.
A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, J. Appl. Phys. 94, 2779 (2003).
N. Dietz, M. Alevli, V. Woods, M. Strassburg, H. Kang, and I. T. Ferguson, Phys. Status Solidi B 242, 2985 (2005).
R. P. Bhatta, B. D. Tho m s, A. Weerasekera, A. G. U. Perera, M. Alevli, and N. Dietz, J. Vac. Sci. Technol. 25, 967 (2007).
Shou-Yi Kuo, Fang-I Lai, Wei-Chun Chen, Woei-Tyng Lin, Chien-Nan Hsiao, Hsin-I Lin, and Han-Chang Pan, Diamond & Related Materials 20, 1188 (2011).
M. A. Hafez and H. E. Elsayed-Ali, J. Vac. Sci. Technol. A 27, 696 (2009).
K. S. Boutros, F. G. McIntosh, J. C. Roberts, S. M. Bedair, E. L. Piner, and N. A. El- Masry. Appl. Phys. Lett. 67, 1856 (1995).
C. Ozgit, I. Donmez, M. Alevli, and N. Biyikli, J. Vac. Sci. Technol. A 30, 01 A₁₂₄ (2012).
N. H. Karam, T. Parodos, P. Colter, D. McNulty, W. Rowland, J. Schetzina, N. El-Masry, and S. M. Bedair, Appl. Phys. Lett. 67, 94 (1995).
K. Kim, N. Kwak, and S. Lee, Electron. Mater. Lett. 5, 83 (2009).
M. Alevli, C. Ozgit, I. Donmez, and N. Biyikli, Phys. Status Solidi A 209, 266 (2012).
O. Ambacher, M. S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R. A. Fischer, A. Miehr, A. Bergmaier, and G. Dollinger, J. Vac. Sci. Technol. B 14, 3532 (1996). InN dissociation temp 630 13. M. Y. Duan, L He, M. Xu, M. Y. Xu, Shuyan Xu, and K. Ostrikov, Phys. Rev. B 81, 033102 (2010).
A. Yamamoto, T. Shin-ya, T. Sugiura, A. Hashimoto, J. Cryst. Growth, 189/190, 461 (1998).
J. G. Lozano, F. M. Morales, R. Garcia, D. Gonzalez, V. Lebedev, Ch. Y. Wang, V. Cimalla, and O Ambacher, Appl. Phys. Lett. 90, 091901 (2007).
A. Janotti and C, G. Van de Walle, Appl. Phys. Lett. 92, 032104 (2008).
L. F. J. Piper, T. D. Veal, M. Walker, I. Mahboob, C. F. McConville, H. Lu, and W. J. Schaff, J. Vac. Sci. Technol. A 23, 617 (2005) 18. C. G. Van de Walle, J. L. Lyons, and A. Janotti, Solidi A 207, 1024 (2010).
T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
M. C. Lee, H. C. Lin, Y. C. Pan, C. K. Shu, J. Ou, W. H. Chen, and W. K. Chen, Appl. Phys. Lett. 73, 2606 (1998).
A.P. Lima, A. Tabata, J.R. Leite, S. Kaiser, D. Schikora, B. Schottker, T. Frey, D.J. As, and K. Lischka, J. Cryst. Growth, 201/202, 396 (1999). Claims What is claimed is:
Materials described outside the worked examples.
InN
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts the x-ray diffraction (XRD) peaks from three of the samples-namely InN (6 0 nm) on GaN/A 1 203 template with T g 183 ° C (top) and on a-plane A …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
d-spacing of first XRD peak, FCC InN on a-plane sapphire at 183 deg C | 6.68 Angstrom | InN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,937,649Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows variation of growth rate (GR) and In/N ratio with a trimethylindium (TMI) pulse of 0.06 seconds. [0005]
FIG. 2 depicts the x-ray diffraction (XRD) peaks from three of the samples-namely InN (6 0 nm) on GaN/A 1 203 template with T g 183 ° C (top) and on a-plane A …
FIG. 3 shows a schematic of the possible structure of a face centered cubic (fc c) InN phase and how it would align to an a-plane sapphire unit cell. [0007]
FIG. 4 depicts the variation of Al content in A lX Ini X N with the A l N/InN cycles ratios in the whole range of x as determined by x-ray photoelectron …
FIG. 5 depicts variation of Ga content in In x Gai x N with GaN/InN cycles ratios in the range x as determined by x-ray photoelectron spectroscopy. InN and GaN …
FIG. 6 depicts variation of Ga content in A lX Gai x N with A l N/GaN cycles and ratios in the range of x as determined by x-ray photoelectron spectroscopy. A …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Y. Nanishi, Y. Saito, and T. Yamaguchi, Jpn. J. Appl. Phys. 42, 2549 (2003) and the references therein.
A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, J. Appl. Phys. 94, 2779 (2003).
N. Dietz, M. Alevli, V. Woods, M. Strassburg, H. Kang, and I. T. Ferguson, Phys. Status Solidi B 242, 2985 (2005).
R. P. Bhatta, B. D. Tho m s, A. Weerasekera, A. G. U. Perera, M. Alevli, and N. Dietz, J. Vac. Sci. Technol. 25, 967 (2007).
Shou-Yi Kuo, Fang-I Lai, Wei-Chun Chen, Woei-Tyng Lin, Chien-Nan Hsiao, Hsin-I Lin, and Han-Chang Pan, Diamond & Related Materials 20, 1188 (2011).
M. A. Hafez and H. E. Elsayed-Ali, J. Vac. Sci. Technol. A 27, 696 (2009).
K. S. Boutros, F. G. McIntosh, J. C. Roberts, S. M. Bedair, E. L. Piner, and N. A. El- Masry. Appl. Phys. Lett. 67, 1856 (1995).
C. Ozgit, I. Donmez, M. Alevli, and N. Biyikli, J. Vac. Sci. Technol. A 30, 01 A₁₂₄ (2012).
N. H. Karam, T. Parodos, P. Colter, D. McNulty, W. Rowland, J. Schetzina, N. El-Masry, and S. M. Bedair, Appl. Phys. Lett. 67, 94 (1995).
K. Kim, N. Kwak, and S. Lee, Electron. Mater. Lett. 5, 83 (2009).
M. Alevli, C. Ozgit, I. Donmez, and N. Biyikli, Phys. Status Solidi A 209, 266 (2012).
O. Ambacher, M. S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R. A. Fischer, A. Miehr, A. Bergmaier, and G. Dollinger, J. Vac. Sci. Technol. B 14, 3532 (1996). InN dissociation temp 630 13. M. Y. Duan, L He, M. Xu, M. Y. Xu, Shuyan Xu, and K. Ostrikov, Phys. Rev. B 81, 033102 (2010).
A. Yamamoto, T. Shin-ya, T. Sugiura, A. Hashimoto, J. Cryst. Growth, 189/190, 461 (1998).
J. G. Lozano, F. M. Morales, R. Garcia, D. Gonzalez, V. Lebedev, Ch. Y. Wang, V. Cimalla, and O Ambacher, Appl. Phys. Lett. 90, 091901 (2007).
A. Janotti and C, G. Van de Walle, Appl. Phys. Lett. 92, 032104 (2008).
L. F. J. Piper, T. D. Veal, M. Walker, I. Mahboob, C. F. McConville, H. Lu, and W. J. Schaff, J. Vac. Sci. Technol. A 23, 617 (2005) 18. C. G. Van de Walle, J. L. Lyons, and A. Janotti, Solidi A 207, 1024 (2010).
T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
M. C. Lee, H. C. Lin, Y. C. Pan, C. K. Shu, J. Ou, W. H. Chen, and W. K. Chen, Appl. Phys. Lett. 73, 2606 (1998).
A.P. Lima, A. Tabata, J.R. Leite, S. Kaiser, D. Schikora, B. Schottker, T. Frey, D.J. As, and K. Lischka, J. Cryst. Growth, 201/202, 396 (1999). Claims What is claimed is:
Materials described outside the worked examples.
InN
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts the x-ray diffraction (XRD) peaks from three of the samples-namely InN (6 0 nm) on GaN/A 1 203 template with T g 183 ° C (top) and on a-plane A …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
d-spacing of first XRD peak, FCC InN on a-plane sapphire at 183 deg C | 6.68 Angstrom | InN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,937,649Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows variation of growth rate (GR) and In/N ratio with a trimethylindium (TMI) pulse of 0.06 seconds. [0005]
FIG. 2 depicts the x-ray diffraction (XRD) peaks from three of the samples-namely InN (6 0 nm) on GaN/A 1 203 template with T g 183 ° C (top) and on a-plane A …
FIG. 3 shows a schematic of the possible structure of a face centered cubic (fc c) InN phase and how it would align to an a-plane sapphire unit cell. [0007]
FIG. 4 depicts the variation of Al content in A lX Ini X N with the A l N/InN cycles ratios in the whole range of x as determined by x-ray photoelectron …
FIG. 5 depicts variation of Ga content in In x Gai x N with GaN/InN cycles ratios in the range x as determined by x-ray photoelectron spectroscopy. InN and GaN …
FIG. 6 depicts variation of Ga content in A lX Gai x N with A l N/GaN cycles and ratios in the range of x as determined by x-ray photoelectron spectroscopy. A …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Y. Nanishi, Y. Saito, and T. Yamaguchi, Jpn. J. Appl. Phys. 42, 2549 (2003) and the references therein.
A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, J. Appl. Phys. 94, 2779 (2003).
N. Dietz, M. Alevli, V. Woods, M. Strassburg, H. Kang, and I. T. Ferguson, Phys. Status Solidi B 242, 2985 (2005).
R. P. Bhatta, B. D. Tho m s, A. Weerasekera, A. G. U. Perera, M. Alevli, and N. Dietz, J. Vac. Sci. Technol. 25, 967 (2007).
Shou-Yi Kuo, Fang-I Lai, Wei-Chun Chen, Woei-Tyng Lin, Chien-Nan Hsiao, Hsin-I Lin, and Han-Chang Pan, Diamond & Related Materials 20, 1188 (2011).
M. A. Hafez and H. E. Elsayed-Ali, J. Vac. Sci. Technol. A 27, 696 (2009).
K. S. Boutros, F. G. McIntosh, J. C. Roberts, S. M. Bedair, E. L. Piner, and N. A. El- Masry. Appl. Phys. Lett. 67, 1856 (1995).
C. Ozgit, I. Donmez, M. Alevli, and N. Biyikli, J. Vac. Sci. Technol. A 30, 01 A₁₂₄ (2012).
N. H. Karam, T. Parodos, P. Colter, D. McNulty, W. Rowland, J. Schetzina, N. El-Masry, and S. M. Bedair, Appl. Phys. Lett. 67, 94 (1995).
K. Kim, N. Kwak, and S. Lee, Electron. Mater. Lett. 5, 83 (2009).
M. Alevli, C. Ozgit, I. Donmez, and N. Biyikli, Phys. Status Solidi A 209, 266 (2012).
O. Ambacher, M. S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R. A. Fischer, A. Miehr, A. Bergmaier, and G. Dollinger, J. Vac. Sci. Technol. B 14, 3532 (1996). InN dissociation temp 630 13. M. Y. Duan, L He, M. Xu, M. Y. Xu, Shuyan Xu, and K. Ostrikov, Phys. Rev. B 81, 033102 (2010).
A. Yamamoto, T. Shin-ya, T. Sugiura, A. Hashimoto, J. Cryst. Growth, 189/190, 461 (1998).
J. G. Lozano, F. M. Morales, R. Garcia, D. Gonzalez, V. Lebedev, Ch. Y. Wang, V. Cimalla, and O Ambacher, Appl. Phys. Lett. 90, 091901 (2007).
A. Janotti and C, G. Van de Walle, Appl. Phys. Lett. 92, 032104 (2008).
L. F. J. Piper, T. D. Veal, M. Walker, I. Mahboob, C. F. McConville, H. Lu, and W. J. Schaff, J. Vac. Sci. Technol. A 23, 617 (2005) 18. C. G. Van de Walle, J. L. Lyons, and A. Janotti, Solidi A 207, 1024 (2010).
T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
M. C. Lee, H. C. Lin, Y. C. Pan, C. K. Shu, J. Ou, W. H. Chen, and W. K. Chen, Appl. Phys. Lett. 73, 2606 (1998).
A.P. Lima, A. Tabata, J.R. Leite, S. Kaiser, D. Schikora, B. Schottker, T. Frey, D.J. As, and K. Lischka, J. Cryst. Growth, 201/202, 396 (1999). Claims What is claimed is:
Materials described outside the worked examples.
InN
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts the x-ray diffraction (XRD) peaks from three of the samples-namely InN (6 0 nm) on GaN/A 1 203 template with T g 183 ° C (top) and on a-plane A …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
d-spacing of first XRD peak, FCC InN on a-plane sapphire at 183 deg C | 6.68 Angstrom | InN |
Related documents with shared materials, methods, properties, or citations.
GaN
InxGa₁-xN
AlxGa₁-xN
AlxIn₁-xN
trimethylindium
TMI
trimethylaluminum
TMA
trimethylgallium
TMG
a-plane sapphire
Al₂O₃
Si(111)
Si
GaN/sapphire template
FIG. 4 depicts the variation of Al content in A lX Ini X N with the A l N/InN cycles ratios in the whole range of x as determined by x-ray photoelectron …
FIG. 5 depicts variation of Ga content in In x Gai x N with GaN/InN cycles ratios in the range x as determined by x-ray photoelectron spectroscopy. InN and GaN …
FIG. 6 depicts variation of Ga content in A lX Gai x N with A l N/GaN cycles and ratios in the range of x as determined by x-ray photoelectron spectroscopy. A …
FWHM of first XRD peak, FCC InN on a-plane sapphire at 183 deg C |
| 494 arc-sec |
InN |
FWHM of second XRD peak, FCC InN on a-plane sapphire at 183 deg C | 371 arc-sec | InN |
In-plane c-direction mismatch of FCC InN with a-plane sapphire | 2.8 % | InN |
In-plane m-direction mismatch of FCC InN with a-plane sapphire | 18.9 % | InN |
Temperature | 160–183 °C | — |
Temperature | 220–260 °C | — |
Temperature | ≤ 700 °C | — |
Temperature | ≥ 500 °C | — |
Temperature | ≥ 300 °C | — |
Temperature | ≥ 650 °C | — |
GaN
InxGa₁-xN
AlxGa₁-xN
AlxIn₁-xN
trimethylindium
TMI
trimethylaluminum
TMA
trimethylgallium
TMG
a-plane sapphire
Al₂O₃
Si(111)
Si
GaN/sapphire template
FIG. 4 depicts the variation of Al content in A lX Ini X N with the A l N/InN cycles ratios in the whole range of x as determined by x-ray photoelectron …
FIG. 5 depicts variation of Ga content in In x Gai x N with GaN/InN cycles ratios in the range x as determined by x-ray photoelectron spectroscopy. InN and GaN …
FIG. 6 depicts variation of Ga content in A lX Gai x N with A l N/GaN cycles and ratios in the range of x as determined by x-ray photoelectron spectroscopy. A …
FWHM of first XRD peak, FCC InN on a-plane sapphire at 183 deg C |
| 494 arc-sec |
InN |
FWHM of second XRD peak, FCC InN on a-plane sapphire at 183 deg C | 371 arc-sec | InN |
In-plane c-direction mismatch of FCC InN with a-plane sapphire | 2.8 % | InN |
In-plane m-direction mismatch of FCC InN with a-plane sapphire | 18.9 % | InN |
Temperature | 160–183 °C | — |
Temperature | 220–260 °C | — |
Temperature | ≤ 700 °C | — |
Temperature | ≥ 500 °C | — |
Temperature | ≥ 300 °C | — |
Temperature | ≥ 650 °C | — |
GaN
InxGa₁-xN
AlxGa₁-xN
AlxIn₁-xN
trimethylindium
TMI
trimethylaluminum
TMA
trimethylgallium
TMG
a-plane sapphire
Al₂O₃
Si(111)
Si
GaN/sapphire template
FIG. 4 depicts the variation of Al content in A lX Ini X N with the A l N/InN cycles ratios in the whole range of x as determined by x-ray photoelectron …
FIG. 5 depicts variation of Ga content in In x Gai x N with GaN/InN cycles ratios in the range x as determined by x-ray photoelectron spectroscopy. InN and GaN …
FIG. 6 depicts variation of Ga content in A lX Gai x N with A l N/GaN cycles and ratios in the range of x as determined by x-ray photoelectron spectroscopy. A …
FWHM of first XRD peak, FCC InN on a-plane sapphire at 183 deg C |
| 494 arc-sec |
InN |
FWHM of second XRD peak, FCC InN on a-plane sapphire at 183 deg C | 371 arc-sec | InN |
In-plane c-direction mismatch of FCC InN with a-plane sapphire | 2.8 % | InN |
In-plane m-direction mismatch of FCC InN with a-plane sapphire | 18.9 % | InN |
Temperature | 160–183 °C | — |
Temperature | 220–260 °C | — |
Temperature | ≤ 700 °C | — |
Temperature | ≥ 500 °C | — |
Temperature | ≥ 300 °C | — |
Temperature | ≥ 650 °C | — |
GaN
InxGa₁-xN
AlxGa₁-xN
AlxIn₁-xN
trimethylindium
TMI
trimethylaluminum
TMA
trimethylgallium
TMG
a-plane sapphire
Al₂O₃
Si(111)
Si
GaN/sapphire template
FIG. 4 depicts the variation of Al content in A lX Ini X N with the A l N/InN cycles ratios in the whole range of x as determined by x-ray photoelectron …
FIG. 5 depicts variation of Ga content in In x Gai x N with GaN/InN cycles ratios in the range x as determined by x-ray photoelectron spectroscopy. InN and GaN …
FIG. 6 depicts variation of Ga content in A lX Gai x N with A l N/GaN cycles and ratios in the range of x as determined by x-ray photoelectron spectroscopy. A …
FWHM of first XRD peak, FCC InN on a-plane sapphire at 183 deg C |
| 494 arc-sec |
InN |
FWHM of second XRD peak, FCC InN on a-plane sapphire at 183 deg C | 371 arc-sec | InN |
In-plane c-direction mismatch of FCC InN with a-plane sapphire | 2.8 % | InN |
In-plane m-direction mismatch of FCC InN with a-plane sapphire | 18.9 % | InN |
Temperature | 160–183 °C | — |
Temperature | 220–260 °C | — |
Temperature | ≤ 700 °C | — |
Temperature | ≥ 500 °C | — |
Temperature | ≥ 300 °C | — |
Temperature | ≥ 650 °C | — |