Patent
US 11,162,189SEMICONDUCTOR SUBSTRATE, GALLIUM NITRIDE SINGLE CRYSTAL, AND METHOD FOR PRODUCING GALLIUM NITRIDE SINGLE CRYSTAL
Kazuhiro YAGIHASHI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,162,189Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram describing a cross-sectional configuration of a semiconductor substrate according to an embodiment of the present invention taken …
FIG. 2B is an explanatory diagram schematically describing twist measurement in X-ray diffraction;
FIG. 3 is a schematic diagram describing a configuration of a reaction apparatus used for production of a gallium nitride single crystal according to an …
FIG. 4 is a perspective view showing a holder for a substrate shown in
FIG. 5A is a TEM bright field image in which a cross section near an interface between a sapphire substrate, and an intermediate layer and a semiconductor layer …
FIG. 6A is the result of tilt measurement of the gallium nitride crystals that form the intermediate layer and the semiconductor layer of the semiconductor …
FIG. 7.
FIG. 8 is a schematic diagram showing an arrangement of a plurality of measurement points on a 2-inch sapphire substrate in which a crystal plane of (0 0 0 1) …
FIG. 9.
FIG. 10 shows a SEM image of the sample according to Example 1. The observation was performed by setting the accelerating voltage at the time of SEM …
FIG. 11 are shown in black color on a color image, and are places where a crystalline phase was unable to be identified. These places were in black color also …
FIG. 12. The horizontal axis of
FIG. 13. The horizontal axis of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor substrate comprising: a sapphire substrate; an intermediate layer formed of gallium nitride with random crystal directions and provided on the sapphire substrate; and at least one or more semiconductor layers each of which is formed of a gallium nitride single crystal and that are provided on the intermediate layer., wherein a g allium nitride crystal layer that includes the intermediate layer and the semiconductor layer contains iron atoms, a concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is in a ran g e of from more than or equal to 1.0 x 10 16 atoms/cm 3 to less than or equal to 1.0 x 10 22 atom s/cm 3, and wherein the concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is such that a concentration of iron atoms is hi g her in an interface re g ion with the sapphire substrate and in a surface re g ion of the g allium nitride crystal layer opposite the interface re g ion with the sapphire substrate than the concentration of iron atoms in an intermediate re g ion between the surface re g ion and the interface re g ion. Currently amended
The semiconductor substrate according to claim 1, wherein a tilt width of gallium nitride that forms the intermediate layer and the semiconductor layer is more than or equal to 0.05 0 and less than or equal to 0.4 0. Original
The semiconductor substrate according to claim 1, wherein a twist width of gallium nitride that forms the intermediate layer and the semiconductor layer is more than or equal to 0.1 0 and less than or equal to 0.7 0. Original
The semiconductor substrate according to claim 1, wherein a plane orientation of a surface of the sapphire substrate on which the intermediate layer is provided is a c-plane or an a-plane. Original
The semiconductor substrate according to claim 1, wherein, in an in-plane direction of the gallium nitride crystal layer, a difference between concentrations of iron atoms at arbitrary two points in the intermediate region is less than or equal to 50% of the concentration of iron atoms at either one of the arbitrary two points. Currently amended
The semiconductor substrate according to claim 1, wherein the interface region is a region within 2 pm in the thickness direction of the gallium nitride from an interface with the sapphire substrate, and the surface region is a region within 1 pm in the thickness direction of the gallium nitride from a surface of the gallium nitride. Currently amended
A method for producing a gallium nitride single crystal included in the semiconductor substrate according to claim 1, the method comprising: a step of heating metal gallium and iron nitride in a nitrogen atmosphere to at least a reaction temperature at which the iron nitride and the metal gallium react together; and a step of, after the metal gallium and the iron nitride are heated to the reaction temperature, holding the metal gallium and the iron nitride at a temperature within a range of the reaction temperature for more than or equal to 20 hours, wherein the sapphire substrate is provided in the heated metal gallium and the heated iron nitride, the iron nitride contains one or more of tetrairon mononitride, triiron mononitride, and diiron mononitride, and the reaction temperature is more than 700 °C and less than or equal to 1000 C. Withdrawn
The semiconductor substrate according to claim 1, wherein the concentration of iron atoms at every depth of the intermediate region is lower than the concentration at the surface region and is lower than the concentration at the interface region. New
. Canceled
. Canceled
The semiconductor substrate according to laim 1, wherein a highest value of a concentration of iron atoms in the interface region is more than or equal to 10 times a lowest value of a concentration of iron atoms in the intermediate region. Currently amended
The semiconductor substrate according to laim wherein a highest value of a concentration of iron atoms in the surface region is more than or equal to 10 times a lowest value of a concentration of iron atoms in the intermediate region. Currently amended
The semiconductor substrate according to laim 1, wherein, in the thickness direction of the gallium nitride crystal layer, a difference between concentrations of iron atoms at arbitrary two points in the intermediate region is less than or equal to 50% of the concentration of iron atoms at either one of the arbitrary two points. Currently amended
At least one or more layers of gallium nitride single crystals that are provided on a sapphire substrate via an intermediate layer formed of gallium nitride with random crystal directions and each of which is formed of a single crystal. wherein a g allium nitride crystal layer that includes the intermediate layer and the semiconductor layer contains iron atoms, a concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is in a ran g e of from more than or equal to 1.0 x 10 16 atoms/cm 3 to less than or equal to 1.0 x 10 22 atoms/cm 3, and wherein the concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is such that a concentration of iron atoms is hi g her in an interface re g ion with the sapphire substrate and in a surface re g ion of the g allium nitride crystal layer opposite the interface re g ion with the sapphire substrate than the concentration of iron atoms in an intermediate re g ion between the surface re g ion and the interface re g ion. Currently amended
The at least one or more layers of gallium nitride single crystals according to claim 12, wherein each of tilt widths of the gallium nitride that forms the intermediate layer and the gallium nitride single crystal is more than or equal to 0.05 0 and less than or equal to 0.4°. Original
The at least one or more layers of gallium nitride single crystals according to claim 12, wherein each of twist widths of the gallium nitride that forms the intermediate layer and the gallium nitride single crystal is more than or equal to 0.1 0 and less than or equal to 0.7 0. Original
The at least one or more layers of gallium nitride single crystals according to claim 12, wherein a plane orientation of a side of the sapphire substrate on which the intermediate layer is provided is a c-plane or an a-plane. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
A gallium nitride crystal was grown on a sapphire substrate by liquid phase growth using metal gallium and iron nitride. The semiconductor substrate was characterized by AFM, SEM, EBSD, and SIMS. SIMS measurement results of the iron atom concentration distribution in the GaN crystal layer were recorded, showing higher Fe concentration near the sapphire interface region and at the surface region compared to the intermediate region.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor substrate
gallium nitride single crystal layer(s) on sapphire
Materials described outside the worked examples.
iron nitride
tetrairon mononitride
Fe₄N
Measurements and analyses referenced in the patent, with their drawing references.
SIMS measurement of iron atom concentration distribution in GaN crystal layer along thickness direction; result shown in FIG. 12 for Example 1 and FIG. 13 for vapor-phase-grown GaN on sapphire.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
tilt width of GaN (intermediate layer and semiconductor layer) | 0.05–0.4 degrees | GaNGaN |
twist width of GaN (intermediate layer and semiconductor layer) |
Table 1
d the intensity values of the gallium nitride (1 1 -2 0) plane in twist measurement are collectively shown in Table 1 below and FIG.
p. 30
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Patent
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US 11,162,189Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram describing a cross-sectional configuration of a semiconductor substrate according to an embodiment of the present invention taken …
FIG. 2B is an explanatory diagram schematically describing twist measurement in X-ray diffraction;
FIG. 3 is a schematic diagram describing a configuration of a reaction apparatus used for production of a gallium nitride single crystal according to an …
FIG. 4 is a perspective view showing a holder for a substrate shown in
FIG. 5A is a TEM bright field image in which a cross section near an interface between a sapphire substrate, and an intermediate layer and a semiconductor layer …
FIG. 6A is the result of tilt measurement of the gallium nitride crystals that form the intermediate layer and the semiconductor layer of the semiconductor …
FIG. 7.
FIG. 8 is a schematic diagram showing an arrangement of a plurality of measurement points on a 2-inch sapphire substrate in which a crystal plane of (0 0 0 1) …
FIG. 9.
FIG. 10 shows a SEM image of the sample according to Example 1. The observation was performed by setting the accelerating voltage at the time of SEM …
FIG. 11 are shown in black color on a color image, and are places where a crystalline phase was unable to be identified. These places were in black color also …
FIG. 12. The horizontal axis of
FIG. 13. The horizontal axis of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor substrate comprising: a sapphire substrate; an intermediate layer formed of gallium nitride with random crystal directions and provided on the sapphire substrate; and at least one or more semiconductor layers each of which is formed of a gallium nitride single crystal and that are provided on the intermediate layer., wherein a g allium nitride crystal layer that includes the intermediate layer and the semiconductor layer contains iron atoms, a concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is in a ran g e of from more than or equal to 1.0 x 10 16 atoms/cm 3 to less than or equal to 1.0 x 10 22 atom s/cm 3, and wherein the concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is such that a concentration of iron atoms is hi g her in an interface re g ion with the sapphire substrate and in a surface re g ion of the g allium nitride crystal layer opposite the interface re g ion with the sapphire substrate than the concentration of iron atoms in an intermediate re g ion between the surface re g ion and the interface re g ion. Currently amended
The semiconductor substrate according to claim 1, wherein a tilt width of gallium nitride that forms the intermediate layer and the semiconductor layer is more than or equal to 0.05 0 and less than or equal to 0.4 0. Original
The semiconductor substrate according to claim 1, wherein a twist width of gallium nitride that forms the intermediate layer and the semiconductor layer is more than or equal to 0.1 0 and less than or equal to 0.7 0. Original
The semiconductor substrate according to claim 1, wherein a plane orientation of a surface of the sapphire substrate on which the intermediate layer is provided is a c-plane or an a-plane. Original
The semiconductor substrate according to claim 1, wherein, in an in-plane direction of the gallium nitride crystal layer, a difference between concentrations of iron atoms at arbitrary two points in the intermediate region is less than or equal to 50% of the concentration of iron atoms at either one of the arbitrary two points. Currently amended
The semiconductor substrate according to claim 1, wherein the interface region is a region within 2 pm in the thickness direction of the gallium nitride from an interface with the sapphire substrate, and the surface region is a region within 1 pm in the thickness direction of the gallium nitride from a surface of the gallium nitride. Currently amended
A method for producing a gallium nitride single crystal included in the semiconductor substrate according to claim 1, the method comprising: a step of heating metal gallium and iron nitride in a nitrogen atmosphere to at least a reaction temperature at which the iron nitride and the metal gallium react together; and a step of, after the metal gallium and the iron nitride are heated to the reaction temperature, holding the metal gallium and the iron nitride at a temperature within a range of the reaction temperature for more than or equal to 20 hours, wherein the sapphire substrate is provided in the heated metal gallium and the heated iron nitride, the iron nitride contains one or more of tetrairon mononitride, triiron mononitride, and diiron mononitride, and the reaction temperature is more than 700 °C and less than or equal to 1000 C. Withdrawn
The semiconductor substrate according to claim 1, wherein the concentration of iron atoms at every depth of the intermediate region is lower than the concentration at the surface region and is lower than the concentration at the interface region. New
. Canceled
. Canceled
The semiconductor substrate according to laim 1, wherein a highest value of a concentration of iron atoms in the interface region is more than or equal to 10 times a lowest value of a concentration of iron atoms in the intermediate region. Currently amended
The semiconductor substrate according to laim wherein a highest value of a concentration of iron atoms in the surface region is more than or equal to 10 times a lowest value of a concentration of iron atoms in the intermediate region. Currently amended
The semiconductor substrate according to laim 1, wherein, in the thickness direction of the gallium nitride crystal layer, a difference between concentrations of iron atoms at arbitrary two points in the intermediate region is less than or equal to 50% of the concentration of iron atoms at either one of the arbitrary two points. Currently amended
At least one or more layers of gallium nitride single crystals that are provided on a sapphire substrate via an intermediate layer formed of gallium nitride with random crystal directions and each of which is formed of a single crystal. wherein a g allium nitride crystal layer that includes the intermediate layer and the semiconductor layer contains iron atoms, a concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is in a ran g e of from more than or equal to 1.0 x 10 16 atoms/cm 3 to less than or equal to 1.0 x 10 22 atoms/cm 3, and wherein the concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is such that a concentration of iron atoms is hi g her in an interface re g ion with the sapphire substrate and in a surface re g ion of the g allium nitride crystal layer opposite the interface re g ion with the sapphire substrate than the concentration of iron atoms in an intermediate re g ion between the surface re g ion and the interface re g ion. Currently amended
The at least one or more layers of gallium nitride single crystals according to claim 12, wherein each of tilt widths of the gallium nitride that forms the intermediate layer and the gallium nitride single crystal is more than or equal to 0.05 0 and less than or equal to 0.4°. Original
The at least one or more layers of gallium nitride single crystals according to claim 12, wherein each of twist widths of the gallium nitride that forms the intermediate layer and the gallium nitride single crystal is more than or equal to 0.1 0 and less than or equal to 0.7 0. Original
The at least one or more layers of gallium nitride single crystals according to claim 12, wherein a plane orientation of a side of the sapphire substrate on which the intermediate layer is provided is a c-plane or an a-plane. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
A gallium nitride crystal was grown on a sapphire substrate by liquid phase growth using metal gallium and iron nitride. The semiconductor substrate was characterized by AFM, SEM, EBSD, and SIMS. SIMS measurement results of the iron atom concentration distribution in the GaN crystal layer were recorded, showing higher Fe concentration near the sapphire interface region and at the surface region compared to the intermediate region.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor substrate
gallium nitride single crystal layer(s) on sapphire
Materials described outside the worked examples.
iron nitride
tetrairon mononitride
Fe₄N
Measurements and analyses referenced in the patent, with their drawing references.
SIMS measurement of iron atom concentration distribution in GaN crystal layer along thickness direction; result shown in FIG. 12 for Example 1 and FIG. 13 for vapor-phase-grown GaN on sapphire.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
tilt width of GaN (intermediate layer and semiconductor layer) | 0.05–0.4 degrees | GaNGaN |
twist width of GaN (intermediate layer and semiconductor layer) |
Table 1
d the intensity values of the gallium nitride (1 1 -2 0) plane in twist measurement are collectively shown in Table 1 below and FIG.
p. 30
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 11,162,189Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram describing a cross-sectional configuration of a semiconductor substrate according to an embodiment of the present invention taken …
FIG. 2B is an explanatory diagram schematically describing twist measurement in X-ray diffraction;
FIG. 3 is a schematic diagram describing a configuration of a reaction apparatus used for production of a gallium nitride single crystal according to an …
FIG. 4 is a perspective view showing a holder for a substrate shown in
FIG. 5A is a TEM bright field image in which a cross section near an interface between a sapphire substrate, and an intermediate layer and a semiconductor layer …
FIG. 6A is the result of tilt measurement of the gallium nitride crystals that form the intermediate layer and the semiconductor layer of the semiconductor …
FIG. 7.
FIG. 8 is a schematic diagram showing an arrangement of a plurality of measurement points on a 2-inch sapphire substrate in which a crystal plane of (0 0 0 1) …
FIG. 9.
FIG. 10 shows a SEM image of the sample according to Example 1. The observation was performed by setting the accelerating voltage at the time of SEM …
FIG. 11 are shown in black color on a color image, and are places where a crystalline phase was unable to be identified. These places were in black color also …
FIG. 12. The horizontal axis of
FIG. 13. The horizontal axis of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor substrate comprising: a sapphire substrate; an intermediate layer formed of gallium nitride with random crystal directions and provided on the sapphire substrate; and at least one or more semiconductor layers each of which is formed of a gallium nitride single crystal and that are provided on the intermediate layer., wherein a g allium nitride crystal layer that includes the intermediate layer and the semiconductor layer contains iron atoms, a concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is in a ran g e of from more than or equal to 1.0 x 10 16 atoms/cm 3 to less than or equal to 1.0 x 10 22 atom s/cm 3, and wherein the concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is such that a concentration of iron atoms is hi g her in an interface re g ion with the sapphire substrate and in a surface re g ion of the g allium nitride crystal layer opposite the interface re g ion with the sapphire substrate than the concentration of iron atoms in an intermediate re g ion between the surface re g ion and the interface re g ion. Currently amended
The semiconductor substrate according to claim 1, wherein a tilt width of gallium nitride that forms the intermediate layer and the semiconductor layer is more than or equal to 0.05 0 and less than or equal to 0.4 0. Original
The semiconductor substrate according to claim 1, wherein a twist width of gallium nitride that forms the intermediate layer and the semiconductor layer is more than or equal to 0.1 0 and less than or equal to 0.7 0. Original
The semiconductor substrate according to claim 1, wherein a plane orientation of a surface of the sapphire substrate on which the intermediate layer is provided is a c-plane or an a-plane. Original
The semiconductor substrate according to claim 1, wherein, in an in-plane direction of the gallium nitride crystal layer, a difference between concentrations of iron atoms at arbitrary two points in the intermediate region is less than or equal to 50% of the concentration of iron atoms at either one of the arbitrary two points. Currently amended
The semiconductor substrate according to claim 1, wherein the interface region is a region within 2 pm in the thickness direction of the gallium nitride from an interface with the sapphire substrate, and the surface region is a region within 1 pm in the thickness direction of the gallium nitride from a surface of the gallium nitride. Currently amended
A method for producing a gallium nitride single crystal included in the semiconductor substrate according to claim 1, the method comprising: a step of heating metal gallium and iron nitride in a nitrogen atmosphere to at least a reaction temperature at which the iron nitride and the metal gallium react together; and a step of, after the metal gallium and the iron nitride are heated to the reaction temperature, holding the metal gallium and the iron nitride at a temperature within a range of the reaction temperature for more than or equal to 20 hours, wherein the sapphire substrate is provided in the heated metal gallium and the heated iron nitride, the iron nitride contains one or more of tetrairon mononitride, triiron mononitride, and diiron mononitride, and the reaction temperature is more than 700 °C and less than or equal to 1000 C. Withdrawn
The semiconductor substrate according to claim 1, wherein the concentration of iron atoms at every depth of the intermediate region is lower than the concentration at the surface region and is lower than the concentration at the interface region. New
. Canceled
. Canceled
The semiconductor substrate according to laim 1, wherein a highest value of a concentration of iron atoms in the interface region is more than or equal to 10 times a lowest value of a concentration of iron atoms in the intermediate region. Currently amended
The semiconductor substrate according to laim wherein a highest value of a concentration of iron atoms in the surface region is more than or equal to 10 times a lowest value of a concentration of iron atoms in the intermediate region. Currently amended
The semiconductor substrate according to laim 1, wherein, in the thickness direction of the gallium nitride crystal layer, a difference between concentrations of iron atoms at arbitrary two points in the intermediate region is less than or equal to 50% of the concentration of iron atoms at either one of the arbitrary two points. Currently amended
At least one or more layers of gallium nitride single crystals that are provided on a sapphire substrate via an intermediate layer formed of gallium nitride with random crystal directions and each of which is formed of a single crystal. wherein a g allium nitride crystal layer that includes the intermediate layer and the semiconductor layer contains iron atoms, a concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is in a ran g e of from more than or equal to 1.0 x 10 16 atoms/cm 3 to less than or equal to 1.0 x 10 22 atoms/cm 3, and wherein the concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is such that a concentration of iron atoms is hi g her in an interface re g ion with the sapphire substrate and in a surface re g ion of the g allium nitride crystal layer opposite the interface re g ion with the sapphire substrate than the concentration of iron atoms in an intermediate re g ion between the surface re g ion and the interface re g ion. Currently amended
The at least one or more layers of gallium nitride single crystals according to claim 12, wherein each of tilt widths of the gallium nitride that forms the intermediate layer and the gallium nitride single crystal is more than or equal to 0.05 0 and less than or equal to 0.4°. Original
The at least one or more layers of gallium nitride single crystals according to claim 12, wherein each of twist widths of the gallium nitride that forms the intermediate layer and the gallium nitride single crystal is more than or equal to 0.1 0 and less than or equal to 0.7 0. Original
The at least one or more layers of gallium nitride single crystals according to claim 12, wherein a plane orientation of a side of the sapphire substrate on which the intermediate layer is provided is a c-plane or an a-plane. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
A gallium nitride crystal was grown on a sapphire substrate by liquid phase growth using metal gallium and iron nitride. The semiconductor substrate was characterized by AFM, SEM, EBSD, and SIMS. SIMS measurement results of the iron atom concentration distribution in the GaN crystal layer were recorded, showing higher Fe concentration near the sapphire interface region and at the surface region compared to the intermediate region.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor substrate
gallium nitride single crystal layer(s) on sapphire
Materials described outside the worked examples.
iron nitride
tetrairon mononitride
Fe₄N
Measurements and analyses referenced in the patent, with their drawing references.
SIMS measurement of iron atom concentration distribution in GaN crystal layer along thickness direction; result shown in FIG. 12 for Example 1 and FIG. 13 for vapor-phase-grown GaN on sapphire.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
tilt width of GaN (intermediate layer and semiconductor layer) | 0.05–0.4 degrees | GaNGaN |
twist width of GaN (intermediate layer and semiconductor layer) |
Table 1
d the intensity values of the gallium nitride (1 1 -2 0) plane in twist measurement are collectively shown in Table 1 below and FIG.
p. 30
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,162,189Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram describing a cross-sectional configuration of a semiconductor substrate according to an embodiment of the present invention taken …
FIG. 2B is an explanatory diagram schematically describing twist measurement in X-ray diffraction;
FIG. 3 is a schematic diagram describing a configuration of a reaction apparatus used for production of a gallium nitride single crystal according to an …
FIG. 4 is a perspective view showing a holder for a substrate shown in
FIG. 5A is a TEM bright field image in which a cross section near an interface between a sapphire substrate, and an intermediate layer and a semiconductor layer …
FIG. 6A is the result of tilt measurement of the gallium nitride crystals that form the intermediate layer and the semiconductor layer of the semiconductor …
FIG. 7.
FIG. 8 is a schematic diagram showing an arrangement of a plurality of measurement points on a 2-inch sapphire substrate in which a crystal plane of (0 0 0 1) …
FIG. 9.
FIG. 10 shows a SEM image of the sample according to Example 1. The observation was performed by setting the accelerating voltage at the time of SEM …
FIG. 11 are shown in black color on a color image, and are places where a crystalline phase was unable to be identified. These places were in black color also …
FIG. 12. The horizontal axis of
FIG. 13. The horizontal axis of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor substrate comprising: a sapphire substrate; an intermediate layer formed of gallium nitride with random crystal directions and provided on the sapphire substrate; and at least one or more semiconductor layers each of which is formed of a gallium nitride single crystal and that are provided on the intermediate layer., wherein a g allium nitride crystal layer that includes the intermediate layer and the semiconductor layer contains iron atoms, a concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is in a ran g e of from more than or equal to 1.0 x 10 16 atoms/cm 3 to less than or equal to 1.0 x 10 22 atom s/cm 3, and wherein the concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is such that a concentration of iron atoms is hi g her in an interface re g ion with the sapphire substrate and in a surface re g ion of the g allium nitride crystal layer opposite the interface re g ion with the sapphire substrate than the concentration of iron atoms in an intermediate re g ion between the surface re g ion and the interface re g ion. Currently amended
The semiconductor substrate according to claim 1, wherein a tilt width of gallium nitride that forms the intermediate layer and the semiconductor layer is more than or equal to 0.05 0 and less than or equal to 0.4 0. Original
The semiconductor substrate according to claim 1, wherein a twist width of gallium nitride that forms the intermediate layer and the semiconductor layer is more than or equal to 0.1 0 and less than or equal to 0.7 0. Original
The semiconductor substrate according to claim 1, wherein a plane orientation of a surface of the sapphire substrate on which the intermediate layer is provided is a c-plane or an a-plane. Original
The semiconductor substrate according to claim 1, wherein, in an in-plane direction of the gallium nitride crystal layer, a difference between concentrations of iron atoms at arbitrary two points in the intermediate region is less than or equal to 50% of the concentration of iron atoms at either one of the arbitrary two points. Currently amended
The semiconductor substrate according to claim 1, wherein the interface region is a region within 2 pm in the thickness direction of the gallium nitride from an interface with the sapphire substrate, and the surface region is a region within 1 pm in the thickness direction of the gallium nitride from a surface of the gallium nitride. Currently amended
A method for producing a gallium nitride single crystal included in the semiconductor substrate according to claim 1, the method comprising: a step of heating metal gallium and iron nitride in a nitrogen atmosphere to at least a reaction temperature at which the iron nitride and the metal gallium react together; and a step of, after the metal gallium and the iron nitride are heated to the reaction temperature, holding the metal gallium and the iron nitride at a temperature within a range of the reaction temperature for more than or equal to 20 hours, wherein the sapphire substrate is provided in the heated metal gallium and the heated iron nitride, the iron nitride contains one or more of tetrairon mononitride, triiron mononitride, and diiron mononitride, and the reaction temperature is more than 700 °C and less than or equal to 1000 C. Withdrawn
The semiconductor substrate according to claim 1, wherein the concentration of iron atoms at every depth of the intermediate region is lower than the concentration at the surface region and is lower than the concentration at the interface region. New
. Canceled
. Canceled
The semiconductor substrate according to laim 1, wherein a highest value of a concentration of iron atoms in the interface region is more than or equal to 10 times a lowest value of a concentration of iron atoms in the intermediate region. Currently amended
The semiconductor substrate according to laim wherein a highest value of a concentration of iron atoms in the surface region is more than or equal to 10 times a lowest value of a concentration of iron atoms in the intermediate region. Currently amended
The semiconductor substrate according to laim 1, wherein, in the thickness direction of the gallium nitride crystal layer, a difference between concentrations of iron atoms at arbitrary two points in the intermediate region is less than or equal to 50% of the concentration of iron atoms at either one of the arbitrary two points. Currently amended
At least one or more layers of gallium nitride single crystals that are provided on a sapphire substrate via an intermediate layer formed of gallium nitride with random crystal directions and each of which is formed of a single crystal. wherein a g allium nitride crystal layer that includes the intermediate layer and the semiconductor layer contains iron atoms, a concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is in a ran g e of from more than or equal to 1.0 x 10 16 atoms/cm 3 to less than or equal to 1.0 x 10 22 atoms/cm 3, and wherein the concentration distribution of iron atoms in the g allium nitride crystal layer, in a thickness direction of the g allium nitride crystal layer, is such that a concentration of iron atoms is hi g her in an interface re g ion with the sapphire substrate and in a surface re g ion of the g allium nitride crystal layer opposite the interface re g ion with the sapphire substrate than the concentration of iron atoms in an intermediate re g ion between the surface re g ion and the interface re g ion. Currently amended
The at least one or more layers of gallium nitride single crystals according to claim 12, wherein each of tilt widths of the gallium nitride that forms the intermediate layer and the gallium nitride single crystal is more than or equal to 0.05 0 and less than or equal to 0.4°. Original
The at least one or more layers of gallium nitride single crystals according to claim 12, wherein each of twist widths of the gallium nitride that forms the intermediate layer and the gallium nitride single crystal is more than or equal to 0.1 0 and less than or equal to 0.7 0. Original
The at least one or more layers of gallium nitride single crystals according to claim 12, wherein a plane orientation of a side of the sapphire substrate on which the intermediate layer is provided is a c-plane or an a-plane. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
A gallium nitride crystal was grown on a sapphire substrate by liquid phase growth using metal gallium and iron nitride. The semiconductor substrate was characterized by AFM, SEM, EBSD, and SIMS. SIMS measurement results of the iron atom concentration distribution in the GaN crystal layer were recorded, showing higher Fe concentration near the sapphire interface region and at the surface region compared to the intermediate region.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor substrate
gallium nitride single crystal layer(s) on sapphire
Materials described outside the worked examples.
iron nitride
tetrairon mononitride
Fe₄N
Measurements and analyses referenced in the patent, with their drawing references.
SIMS measurement of iron atom concentration distribution in GaN crystal layer along thickness direction; result shown in FIG. 12 for Example 1 and FIG. 13 for vapor-phase-grown GaN on sapphire.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
tilt width of GaN (intermediate layer and semiconductor layer) | 0.05–0.4 degrees | GaNGaN |
twist width of GaN (intermediate layer and semiconductor layer) |
Table 1
d the intensity values of the gallium nitride (1 1 -2 0) plane in twist measurement are collectively shown in Table 1 below and FIG.
p. 30
Related documents with shared materials, methods, properties, or citations.
triiron mononitride
Fe₃N
diiron mononitride
Fe₂N
AFM image in 5 µm x 5 µm observation area of sample according to Example 1 (FIG. 9).
SEM image of sample according to Example 1 (FIG. 10).
Inverse pole figure from EBSD analysis of sample according to Example 1 viewed from Z-axis direction (FIG. 11).
Tilt measurement (FIG. 6A) and twist measurement (FIG. 6B) of GaN single crystal forming the semiconductor layer according to Example 1.
| 0.1–0.7 degrees |
GaNGaN |
iron atom concentration in GaN crystal layer (thickness direction) | 10000000000000000–1e+22 atoms/cm3 | GaNGaN |
Temperature | ≥ 700 °C | — |
triiron mononitride
Fe₃N
diiron mononitride
Fe₂N
AFM image in 5 µm x 5 µm observation area of sample according to Example 1 (FIG. 9).
SEM image of sample according to Example 1 (FIG. 10).
Inverse pole figure from EBSD analysis of sample according to Example 1 viewed from Z-axis direction (FIG. 11).
Tilt measurement (FIG. 6A) and twist measurement (FIG. 6B) of GaN single crystal forming the semiconductor layer according to Example 1.
| 0.1–0.7 degrees |
GaNGaN |
iron atom concentration in GaN crystal layer (thickness direction) | 10000000000000000–1e+22 atoms/cm3 | GaNGaN |
Temperature | ≥ 700 °C | — |
triiron mononitride
Fe₃N
diiron mononitride
Fe₂N
AFM image in 5 µm x 5 µm observation area of sample according to Example 1 (FIG. 9).
SEM image of sample according to Example 1 (FIG. 10).
Inverse pole figure from EBSD analysis of sample according to Example 1 viewed from Z-axis direction (FIG. 11).
Tilt measurement (FIG. 6A) and twist measurement (FIG. 6B) of GaN single crystal forming the semiconductor layer according to Example 1.
| 0.1–0.7 degrees |
GaNGaN |
iron atom concentration in GaN crystal layer (thickness direction) | 10000000000000000–1e+22 atoms/cm3 | GaNGaN |
Temperature | ≥ 700 °C | — |
triiron mononitride
Fe₃N
diiron mononitride
Fe₂N
AFM image in 5 µm x 5 µm observation area of sample according to Example 1 (FIG. 9).
SEM image of sample according to Example 1 (FIG. 10).
Inverse pole figure from EBSD analysis of sample according to Example 1 viewed from Z-axis direction (FIG. 11).
Tilt measurement (FIG. 6A) and twist measurement (FIG. 6B) of GaN single crystal forming the semiconductor layer according to Example 1.
| 0.1–0.7 degrees |
GaNGaN |
iron atom concentration in GaN crystal layer (thickness direction) | 10000000000000000–1e+22 atoms/cm3 | GaNGaN |
Temperature | ≥ 700 °C | — |