Patent
Atlas literature
Patent
US 11,963,450 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart of steps (1) and (2) of a method of manufacturing a core-shell coaxial gallium nitride piezo- electric nanogenerator based on wet etching …
FIG. 2 schematically illustrates electrodeless photoelec- 60 trochemical etching on a gallium nitride wafer in step (2);
FIG. 3 is a flow chart of step (3) of the method according to one embodiment of the present disclosure;
FIG. 4 is a flow chart of a step of “peeling the core-shell coaxial gallium nitride nanowire array from the gallium 65 nitride wafer” in step (4) of the method …
FIG. 5 is a schematic diagram of the core-shell coaxial gallium nitride piezoelectric nanogenerator according to one embodiment of the present disclosure. In …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a core-shell coaxial gal-lium nitride (GaN) piezoelectric nanogenerator based on wet etching, the core-shell coaxial gallium nitride piezoelectric nanogenerator comprising a core-shell coaxial gallium nitride nanowire array and a flexible substrate; a first con-ductive layer being provided on a surface of the flexible substrate; the core-shell coaxial gallium nitride nanowire array being fixed to the flexible substrate; a top end of the core-shell coaxial gallium nitride nanowire array being provided with a second conductive layer; the first conductive layer and the second conductive layer being connected to an external circuit via a wire; and a nanowire of the core-shell coaxial gallium nitride nanowire array being covered with an alumina layer; and the method comprising: covering a center part of a gallium nitride wafer with a mask; and providing a precious metal layer on a surface of the gallium nitride wafer; removing the mask from the gallium nitride wafer; and performing an electrodeless photoelectrochemical B₂ etching on the gallium nitride wafer to form a primary gallium nitride nanowire array on the center part of the gallium nitride wafer; removing the precious metal layer from the surface of the gallium nitride wafer; and depositing the alumina layer on the surface of the gallium nitride wafer by magne-tron sputtering to cover the primary gallium nitride nanowire array to obtain the core-shell coaxial gallium nitride nanowire array; and providing the first conductive layer on the surface of the flexible substrate; and transferring the core-shell coaxial gallium nitride nanowire array to the flexible substrate; and providing the second conductive layer at the top end of the core-shell coaxial gallium nitride nanowire array; and connecting the second conductive layer with the exter-nal circuit through the wire to obtain the core-shell coaxial gallium nitride piezoelectric nanogenerator; wherein the first conductive layer is deposited on the flexible substrate by magnetron sputtering; the second conductive layer comprises a metal bonding layer and a gold layer; the metal bonding layer is deposited on the top end of the core-shell coaxial gallium nitride nanow-ire array by magnetron sputtering; and the gold layer is deposited on the metal bonding layer by magnetron sputtering.
The method of claim 1, wherein the electrodeless photoelectrochemical etching is performed at an etching speed of 500∼600 nm/min in an etching solution; the etching solution is an aqueous potassium persulfate-potassium hydroxide solution; and a concentration of both potassium persulfate and potassium hydroxide in the etching solution is 0.1 mol/L.
The method of claim 1, further comprising: after obtaining the core-shell coaxial gallium nitride nanowire array, spin-coating and curing an insulating resin on the surface of the gallium nitride wafer; and subjecting the insulating resin to inductively-coupled plasma etching to expose the top end of the core-shell coaxial gallium nitride nanowire array.
The method of claim 1, wherein the core-shell coaxial gallium nitride nanowire array is peeled from the gallium nitride wafer with a doctor blade; and the core-shell coaxial gallium nitride nanowire array is fixed on the flexible substrate with a thermosetting adhesive.
The method of claim 1, wherein a thickness of the alumina layer is 5-10 nm.
The method of claim 1, wherein the metal bonding layer is arranged between the gold layer and the core-shell coaxial gallium nitride nanowire array.
The method of claim 1, wherein the core-shell coaxial gallium nitride nanowire array is filled with an insulating material. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
core-shell coaxial GaN piezoelectric nanogenerator
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
alumina
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–10 nm | — |
Thickness | 500–600 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,963,450 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart of steps (1) and (2) of a method of manufacturing a core-shell coaxial gallium nitride piezo- electric nanogenerator based on wet etching …
FIG. 2 schematically illustrates electrodeless photoelec- 60 trochemical etching on a gallium nitride wafer in step (2);
FIG. 3 is a flow chart of step (3) of the method according to one embodiment of the present disclosure;
FIG. 4 is a flow chart of a step of “peeling the core-shell coaxial gallium nitride nanowire array from the gallium 65 nitride wafer” in step (4) of the method …
FIG. 5 is a schematic diagram of the core-shell coaxial gallium nitride piezoelectric nanogenerator according to one embodiment of the present disclosure. In …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a core-shell coaxial gal-lium nitride (GaN) piezoelectric nanogenerator based on wet etching, the core-shell coaxial gallium nitride piezoelectric nanogenerator comprising a core-shell coaxial gallium nitride nanowire array and a flexible substrate; a first con-ductive layer being provided on a surface of the flexible substrate; the core-shell coaxial gallium nitride nanowire array being fixed to the flexible substrate; a top end of the core-shell coaxial gallium nitride nanowire array being provided with a second conductive layer; the first conductive layer and the second conductive layer being connected to an external circuit via a wire; and a nanowire of the core-shell coaxial gallium nitride nanowire array being covered with an alumina layer; and the method comprising: covering a center part of a gallium nitride wafer with a mask; and providing a precious metal layer on a surface of the gallium nitride wafer; removing the mask from the gallium nitride wafer; and performing an electrodeless photoelectrochemical B₂ etching on the gallium nitride wafer to form a primary gallium nitride nanowire array on the center part of the gallium nitride wafer; removing the precious metal layer from the surface of the gallium nitride wafer; and depositing the alumina layer on the surface of the gallium nitride wafer by magne-tron sputtering to cover the primary gallium nitride nanowire array to obtain the core-shell coaxial gallium nitride nanowire array; and providing the first conductive layer on the surface of the flexible substrate; and transferring the core-shell coaxial gallium nitride nanowire array to the flexible substrate; and providing the second conductive layer at the top end of the core-shell coaxial gallium nitride nanowire array; and connecting the second conductive layer with the exter-nal circuit through the wire to obtain the core-shell coaxial gallium nitride piezoelectric nanogenerator; wherein the first conductive layer is deposited on the flexible substrate by magnetron sputtering; the second conductive layer comprises a metal bonding layer and a gold layer; the metal bonding layer is deposited on the top end of the core-shell coaxial gallium nitride nanow-ire array by magnetron sputtering; and the gold layer is deposited on the metal bonding layer by magnetron sputtering.
The method of claim 1, wherein the electrodeless photoelectrochemical etching is performed at an etching speed of 500∼600 nm/min in an etching solution; the etching solution is an aqueous potassium persulfate-potassium hydroxide solution; and a concentration of both potassium persulfate and potassium hydroxide in the etching solution is 0.1 mol/L.
The method of claim 1, further comprising: after obtaining the core-shell coaxial gallium nitride nanowire array, spin-coating and curing an insulating resin on the surface of the gallium nitride wafer; and subjecting the insulating resin to inductively-coupled plasma etching to expose the top end of the core-shell coaxial gallium nitride nanowire array.
The method of claim 1, wherein the core-shell coaxial gallium nitride nanowire array is peeled from the gallium nitride wafer with a doctor blade; and the core-shell coaxial gallium nitride nanowire array is fixed on the flexible substrate with a thermosetting adhesive.
The method of claim 1, wherein a thickness of the alumina layer is 5-10 nm.
The method of claim 1, wherein the metal bonding layer is arranged between the gold layer and the core-shell coaxial gallium nitride nanowire array.
The method of claim 1, wherein the core-shell coaxial gallium nitride nanowire array is filled with an insulating material. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
core-shell coaxial GaN piezoelectric nanogenerator
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
alumina
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–10 nm | — |
Thickness | 500–600 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,963,450 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart of steps (1) and (2) of a method of manufacturing a core-shell coaxial gallium nitride piezo- electric nanogenerator based on wet etching …
FIG. 2 schematically illustrates electrodeless photoelec- 60 trochemical etching on a gallium nitride wafer in step (2);
FIG. 3 is a flow chart of step (3) of the method according to one embodiment of the present disclosure;
FIG. 4 is a flow chart of a step of “peeling the core-shell coaxial gallium nitride nanowire array from the gallium 65 nitride wafer” in step (4) of the method …
FIG. 5 is a schematic diagram of the core-shell coaxial gallium nitride piezoelectric nanogenerator according to one embodiment of the present disclosure. In …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a core-shell coaxial gal-lium nitride (GaN) piezoelectric nanogenerator based on wet etching, the core-shell coaxial gallium nitride piezoelectric nanogenerator comprising a core-shell coaxial gallium nitride nanowire array and a flexible substrate; a first con-ductive layer being provided on a surface of the flexible substrate; the core-shell coaxial gallium nitride nanowire array being fixed to the flexible substrate; a top end of the core-shell coaxial gallium nitride nanowire array being provided with a second conductive layer; the first conductive layer and the second conductive layer being connected to an external circuit via a wire; and a nanowire of the core-shell coaxial gallium nitride nanowire array being covered with an alumina layer; and the method comprising: covering a center part of a gallium nitride wafer with a mask; and providing a precious metal layer on a surface of the gallium nitride wafer; removing the mask from the gallium nitride wafer; and performing an electrodeless photoelectrochemical B₂ etching on the gallium nitride wafer to form a primary gallium nitride nanowire array on the center part of the gallium nitride wafer; removing the precious metal layer from the surface of the gallium nitride wafer; and depositing the alumina layer on the surface of the gallium nitride wafer by magne-tron sputtering to cover the primary gallium nitride nanowire array to obtain the core-shell coaxial gallium nitride nanowire array; and providing the first conductive layer on the surface of the flexible substrate; and transferring the core-shell coaxial gallium nitride nanowire array to the flexible substrate; and providing the second conductive layer at the top end of the core-shell coaxial gallium nitride nanowire array; and connecting the second conductive layer with the exter-nal circuit through the wire to obtain the core-shell coaxial gallium nitride piezoelectric nanogenerator; wherein the first conductive layer is deposited on the flexible substrate by magnetron sputtering; the second conductive layer comprises a metal bonding layer and a gold layer; the metal bonding layer is deposited on the top end of the core-shell coaxial gallium nitride nanow-ire array by magnetron sputtering; and the gold layer is deposited on the metal bonding layer by magnetron sputtering.
The method of claim 1, wherein the electrodeless photoelectrochemical etching is performed at an etching speed of 500∼600 nm/min in an etching solution; the etching solution is an aqueous potassium persulfate-potassium hydroxide solution; and a concentration of both potassium persulfate and potassium hydroxide in the etching solution is 0.1 mol/L.
The method of claim 1, further comprising: after obtaining the core-shell coaxial gallium nitride nanowire array, spin-coating and curing an insulating resin on the surface of the gallium nitride wafer; and subjecting the insulating resin to inductively-coupled plasma etching to expose the top end of the core-shell coaxial gallium nitride nanowire array.
The method of claim 1, wherein the core-shell coaxial gallium nitride nanowire array is peeled from the gallium nitride wafer with a doctor blade; and the core-shell coaxial gallium nitride nanowire array is fixed on the flexible substrate with a thermosetting adhesive.
The method of claim 1, wherein a thickness of the alumina layer is 5-10 nm.
The method of claim 1, wherein the metal bonding layer is arranged between the gold layer and the core-shell coaxial gallium nitride nanowire array.
The method of claim 1, wherein the core-shell coaxial gallium nitride nanowire array is filled with an insulating material. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
core-shell coaxial GaN piezoelectric nanogenerator
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
alumina
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–10 nm | — |
Thickness | 500–600 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,963,450 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart of steps (1) and (2) of a method of manufacturing a core-shell coaxial gallium nitride piezo- electric nanogenerator based on wet etching …
FIG. 2 schematically illustrates electrodeless photoelec- 60 trochemical etching on a gallium nitride wafer in step (2);
FIG. 3 is a flow chart of step (3) of the method according to one embodiment of the present disclosure;
FIG. 4 is a flow chart of a step of “peeling the core-shell coaxial gallium nitride nanowire array from the gallium 65 nitride wafer” in step (4) of the method …
FIG. 5 is a schematic diagram of the core-shell coaxial gallium nitride piezoelectric nanogenerator according to one embodiment of the present disclosure. In …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a core-shell coaxial gal-lium nitride (GaN) piezoelectric nanogenerator based on wet etching, the core-shell coaxial gallium nitride piezoelectric nanogenerator comprising a core-shell coaxial gallium nitride nanowire array and a flexible substrate; a first con-ductive layer being provided on a surface of the flexible substrate; the core-shell coaxial gallium nitride nanowire array being fixed to the flexible substrate; a top end of the core-shell coaxial gallium nitride nanowire array being provided with a second conductive layer; the first conductive layer and the second conductive layer being connected to an external circuit via a wire; and a nanowire of the core-shell coaxial gallium nitride nanowire array being covered with an alumina layer; and the method comprising: covering a center part of a gallium nitride wafer with a mask; and providing a precious metal layer on a surface of the gallium nitride wafer; removing the mask from the gallium nitride wafer; and performing an electrodeless photoelectrochemical B₂ etching on the gallium nitride wafer to form a primary gallium nitride nanowire array on the center part of the gallium nitride wafer; removing the precious metal layer from the surface of the gallium nitride wafer; and depositing the alumina layer on the surface of the gallium nitride wafer by magne-tron sputtering to cover the primary gallium nitride nanowire array to obtain the core-shell coaxial gallium nitride nanowire array; and providing the first conductive layer on the surface of the flexible substrate; and transferring the core-shell coaxial gallium nitride nanowire array to the flexible substrate; and providing the second conductive layer at the top end of the core-shell coaxial gallium nitride nanowire array; and connecting the second conductive layer with the exter-nal circuit through the wire to obtain the core-shell coaxial gallium nitride piezoelectric nanogenerator; wherein the first conductive layer is deposited on the flexible substrate by magnetron sputtering; the second conductive layer comprises a metal bonding layer and a gold layer; the metal bonding layer is deposited on the top end of the core-shell coaxial gallium nitride nanow-ire array by magnetron sputtering; and the gold layer is deposited on the metal bonding layer by magnetron sputtering.
The method of claim 1, wherein the electrodeless photoelectrochemical etching is performed at an etching speed of 500∼600 nm/min in an etching solution; the etching solution is an aqueous potassium persulfate-potassium hydroxide solution; and a concentration of both potassium persulfate and potassium hydroxide in the etching solution is 0.1 mol/L.
The method of claim 1, further comprising: after obtaining the core-shell coaxial gallium nitride nanowire array, spin-coating and curing an insulating resin on the surface of the gallium nitride wafer; and subjecting the insulating resin to inductively-coupled plasma etching to expose the top end of the core-shell coaxial gallium nitride nanowire array.
The method of claim 1, wherein the core-shell coaxial gallium nitride nanowire array is peeled from the gallium nitride wafer with a doctor blade; and the core-shell coaxial gallium nitride nanowire array is fixed on the flexible substrate with a thermosetting adhesive.
The method of claim 1, wherein a thickness of the alumina layer is 5-10 nm.
The method of claim 1, wherein the metal bonding layer is arranged between the gold layer and the core-shell coaxial gallium nitride nanowire array.
The method of claim 1, wherein the core-shell coaxial gallium nitride nanowire array is filled with an insulating material. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
core-shell coaxial GaN piezoelectric nanogenerator
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
alumina
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–10 nm | — |
Thickness | 500–600 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
precious metal layer
metal bonding layer
gold layer
Au
potassium persulfate
K₂S₂O₈
potassium hydroxide
KOH
insulating resin
thermosetting adhesive
insulating material
| — |
Thickness | 70–120 nm | — |
precious metal layer
metal bonding layer
gold layer
Au
potassium persulfate
K₂S₂O₈
potassium hydroxide
KOH
insulating resin
thermosetting adhesive
insulating material
| — |
Thickness | 70–120 nm | — |
precious metal layer
metal bonding layer
gold layer
Au
potassium persulfate
K₂S₂O₈
potassium hydroxide
KOH
insulating resin
thermosetting adhesive
insulating material
| — |
Thickness | 70–120 nm | — |
precious metal layer
metal bonding layer
gold layer
Au
potassium persulfate
K₂S₂O₈
potassium hydroxide
KOH
insulating resin
thermosetting adhesive
insulating material
| — |
Thickness | 70–120 nm | — |
