A gallium nitride (GaN)-based diode, comprising: an intrinsic GaN-based semiconductor layer; GaN-based semiconductor layers [[with]]havin q a first conductivity type. [[and]] a first surface thereof disposed on a first surface of bondcd to the intrinsic GaN-based semiconductor layer; a first electrode made of metal and disposed positioned on a second surface of the intrinsic GaN-based semiconductor layer opposite [[a]]to the first surface bonded to the GaN based semiconductor layers there of the intrinsic GaN based semiconductor layer; a second electrode disposed positioned on a second surface of the GaN-based semiconductor layers opposite to [[a]]the first surface thereof bonded to the intrinsic GaN based semiconductor layer of the GaN based semiconductor layers of the first conductivity type; and voltage-resistant layers [[with]]having a second conductivity type and disposed formcd in regions of the intrinsic GaN-based semiconductor layer that come in contactin g [[with]] edges of the first electrode.

A method of fabricating a gallium nitride (GaN)-based diode, comprising: forming GaN-based semiconductor layers of a second conductivity type in regions over a sapphire substrate; forming an intrinsic GaN-based semiconductor layer by growing a GaN-based semiconductor in an Epitaxial Lateral Overgrowth (ELO) manner using the GaN-based semiconductor layers of the second conductivity type as a seed layer; forming lower Threading Dislocation (TD) blocking insulating layers in regions over the 3 Application No.: 14/447,225 Reply dated Response to Office Action of intrinsic GaN-based semiconductor layer; forming GaN-based semiconductor layers of a first conductivity type by growing a GaN- based semiconductor of the first conductivity type in an ELO manner using the lower TD blocking insulating layers as an ELO growth mask; forming a second electrode made of conductive materials over the GaN-based semiconductor layers of the first conductivity type and the lower TD blocking insulating layers; attaching a second substrate made of metal to the second electrode; removing the sapphire substrate; forming upper TD blocking insulating layers in areas of a surface from which the sapphire substrate has been removed which overlap the lower TD blocking insulating layers; and forming a first electrode in a region over the upper TD blocking insulating layers. withdrawn

A gallium nitride (GaN)-based diode, comprising: 4 Application No.: 14/447,225 Reply dated Response to Office Action of an intrinsic GaN-based semiconductor layer; GaN-based semiconductor layers [[with]]having an n+ type conductivity, [[and]]a first surface thereof disposed on a first surface of bonded to the intrinsic GaN-based semiconductor layer; a first electrode disposed made of metal and positioned on a second surface of the intrinsic GaN-based semiconductor layer opposite [[a]]to the first surface thereof bonded to the GaN based semiconductor layers of the intrinsic GaN based semiconductor layer; a second electrode disposed positioned on a second surface of the GaN-based semiconductor layers opposite to [[a]]the first surface thereof bonded to the intrinsic GaN based scmiconductor layers of the n + typc; and conductivity and disposed formed in regions of the com e in contacting [[with]] edges of the first scmiconductor layer of the GaN based voltage-resistant layers [[with]]havin q a p type intrinsic GaN-based semiconductor layer that electrode.

A gallium nitride (GaN)-based diode, comprising: an intrinsic GaN-based semiconductor layer; GaN-based semiconductor layers [[with]]havin q a first conductivity type. [[and]] a first surface thereof disposed on a first surface of bondcd to the intrinsic GaN-based semiconductor layer; a first electrode made of metal and disposed positioned on a second surface of the intrinsic GaN-based semiconductor layer opposite [[a]]to the first surface bonded to the GaN based semiconductor layers there of the intrinsic GaN based semiconductor layer; a second electrode disposed positioned on a second surface of the GaN-based semiconductor layers opposite to [[a]]the first surface thereof bonded to the intrinsic GaN based semiconductor layer of the GaN based semiconductor layers of the first conductivity type; and voltage-resistant layers [[with]]having a second conductivity type and disposed formcd in regions of the intrinsic GaN-based semiconductor layer that come in contactin g [[with]] edges of the first electrode.

A method of fabricating a gallium nitride (GaN)-based diode, comprising: forming GaN-based semiconductor layers of a second conductivity type in regions over a sapphire substrate; forming an intrinsic GaN-based semiconductor layer by growing a GaN-based semiconductor in an Epitaxial Lateral Overgrowth (ELO) manner using the GaN-based semiconductor layers of the second conductivity type as a seed layer; forming lower Threading Dislocation (TD) blocking insulating layers in regions over the 3 Application No.: 14/447,225 Reply dated Response to Office Action of intrinsic GaN-based semiconductor layer; forming GaN-based semiconductor layers of a first conductivity type by growing a GaN- based semiconductor of the first conductivity type in an ELO manner using the lower TD blocking insulating layers as an ELO growth mask; forming a second electrode made of conductive materials over the GaN-based semiconductor layers of the first conductivity type and the lower TD blocking insulating layers; attaching a second substrate made of metal to the second electrode; removing the sapphire substrate; forming upper TD blocking insulating layers in areas of a surface from which the sapphire substrate has been removed which overlap the lower TD blocking insulating layers; and forming a first electrode in a region over the upper TD blocking insulating layers. withdrawn

A gallium nitride (GaN)-based diode, comprising: 4 Application No.: 14/447,225 Reply dated Response to Office Action of an intrinsic GaN-based semiconductor layer; GaN-based semiconductor layers [[with]]having an n+ type conductivity, [[and]]a first surface thereof disposed on a first surface of bonded to the intrinsic GaN-based semiconductor layer; a first electrode disposed made of metal and positioned on a second surface of the intrinsic GaN-based semiconductor layer opposite [[a]]to the first surface thereof bonded to the GaN based semiconductor layers of the intrinsic GaN based semiconductor layer; a second electrode disposed positioned on a second surface of the GaN-based semiconductor layers opposite to [[a]]the first surface thereof bonded to the intrinsic GaN based scmiconductor layers of the n + typc; and conductivity and disposed formed in regions of the com e in contacting [[with]] edges of the first scmiconductor layer of the GaN based voltage-resistant layers [[with]]havin q a p type intrinsic GaN-based semiconductor layer that electrode.

A gallium nitride (GaN)-based diode, comprising: an intrinsic GaN-based semiconductor layer; GaN-based semiconductor layers [[with]]havin q a first conductivity type. [[and]] a first surface thereof disposed on a first surface of bondcd to the intrinsic GaN-based semiconductor layer; a first electrode made of metal and disposed positioned on a second surface of the intrinsic GaN-based semiconductor layer opposite [[a]]to the first surface bonded to the GaN based semiconductor layers there of the intrinsic GaN based semiconductor layer; a second electrode disposed positioned on a second surface of the GaN-based semiconductor layers opposite to [[a]]the first surface thereof bonded to the intrinsic GaN based semiconductor layer of the GaN based semiconductor layers of the first conductivity type; and voltage-resistant layers [[with]]having a second conductivity type and disposed formcd in regions of the intrinsic GaN-based semiconductor layer that come in contactin g [[with]] edges of the first electrode.

A method of fabricating a gallium nitride (GaN)-based diode, comprising: forming GaN-based semiconductor layers of a second conductivity type in regions over a sapphire substrate; forming an intrinsic GaN-based semiconductor layer by growing a GaN-based semiconductor in an Epitaxial Lateral Overgrowth (ELO) manner using the GaN-based semiconductor layers of the second conductivity type as a seed layer; forming lower Threading Dislocation (TD) blocking insulating layers in regions over the 3 Application No.: 14/447,225 Reply dated Response to Office Action of intrinsic GaN-based semiconductor layer; forming GaN-based semiconductor layers of a first conductivity type by growing a GaN- based semiconductor of the first conductivity type in an ELO manner using the lower TD blocking insulating layers as an ELO growth mask; forming a second electrode made of conductive materials over the GaN-based semiconductor layers of the first conductivity type and the lower TD blocking insulating layers; attaching a second substrate made of metal to the second electrode; removing the sapphire substrate; forming upper TD blocking insulating layers in areas of a surface from which the sapphire substrate has been removed which overlap the lower TD blocking insulating layers; and forming a first electrode in a region over the upper TD blocking insulating layers. withdrawn

A gallium nitride (GaN)-based diode, comprising: 4 Application No.: 14/447,225 Reply dated Response to Office Action of an intrinsic GaN-based semiconductor layer; GaN-based semiconductor layers [[with]]having an n+ type conductivity, [[and]]a first surface thereof disposed on a first surface of bonded to the intrinsic GaN-based semiconductor layer; a first electrode disposed made of metal and positioned on a second surface of the intrinsic GaN-based semiconductor layer opposite [[a]]to the first surface thereof bonded to the GaN based semiconductor layers of the intrinsic GaN based semiconductor layer; a second electrode disposed positioned on a second surface of the GaN-based semiconductor layers opposite to [[a]]the first surface thereof bonded to the intrinsic GaN based scmiconductor layers of the n + typc; and conductivity and disposed formed in regions of the com e in contacting [[with]] edges of the first scmiconductor layer of the GaN based voltage-resistant layers [[with]]havin q a p type intrinsic GaN-based semiconductor layer that electrode.

A gallium nitride (GaN)-based diode, comprising: an intrinsic GaN-based semiconductor layer; GaN-based semiconductor layers [[with]]havin q a first conductivity type. [[and]] a first surface thereof disposed on a first surface of bondcd to the intrinsic GaN-based semiconductor layer; a first electrode made of metal and disposed positioned on a second surface of the intrinsic GaN-based semiconductor layer opposite [[a]]to the first surface bonded to the GaN based semiconductor layers there of the intrinsic GaN based semiconductor layer; a second electrode disposed positioned on a second surface of the GaN-based semiconductor layers opposite to [[a]]the first surface thereof bonded to the intrinsic GaN based semiconductor layer of the GaN based semiconductor layers of the first conductivity type; and voltage-resistant layers [[with]]having a second conductivity type and disposed formcd in regions of the intrinsic GaN-based semiconductor layer that come in contactin g [[with]] edges of the first electrode.

A method of fabricating a gallium nitride (GaN)-based diode, comprising: forming GaN-based semiconductor layers of a second conductivity type in regions over a sapphire substrate; forming an intrinsic GaN-based semiconductor layer by growing a GaN-based semiconductor in an Epitaxial Lateral Overgrowth (ELO) manner using the GaN-based semiconductor layers of the second conductivity type as a seed layer; forming lower Threading Dislocation (TD) blocking insulating layers in regions over the 3 Application No.: 14/447,225 Reply dated Response to Office Action of intrinsic GaN-based semiconductor layer; forming GaN-based semiconductor layers of a first conductivity type by growing a GaN- based semiconductor of the first conductivity type in an ELO manner using the lower TD blocking insulating layers as an ELO growth mask; forming a second electrode made of conductive materials over the GaN-based semiconductor layers of the first conductivity type and the lower TD blocking insulating layers; attaching a second substrate made of metal to the second electrode; removing the sapphire substrate; forming upper TD blocking insulating layers in areas of a surface from which the sapphire substrate has been removed which overlap the lower TD blocking insulating layers; and forming a first electrode in a region over the upper TD blocking insulating layers. withdrawn

A gallium nitride (GaN)-based diode, comprising: 4 Application No.: 14/447,225 Reply dated Response to Office Action of an intrinsic GaN-based semiconductor layer; GaN-based semiconductor layers [[with]]having an n+ type conductivity, [[and]]a first surface thereof disposed on a first surface of bonded to the intrinsic GaN-based semiconductor layer; a first electrode disposed made of metal and positioned on a second surface of the intrinsic GaN-based semiconductor layer opposite [[a]]to the first surface thereof bonded to the GaN based semiconductor layers of the intrinsic GaN based semiconductor layer; a second electrode disposed positioned on a second surface of the GaN-based semiconductor layers opposite to [[a]]the first surface thereof bonded to the intrinsic GaN based scmiconductor layers of the n + typc; and conductivity and disposed formed in regions of the com e in contacting [[with]] edges of the first scmiconductor layer of the GaN based voltage-resistant layers [[with]]havin q a p type intrinsic GaN-based semiconductor layer that electrode.