GaN SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PROCESSING SURFACE OF GaN SINGLE CRYSTAL SUBSTRATE

Jin Suk Jeong

Patent

Atlas literature

Patent

US 8,337,614

GaN SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PROCESSING SURFACE OF GaN SINGLE CRYSTAL SUBSTRATE

Jin Suk Jeong

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 is a sectional view of a heterogeneous substrate and a gallium nitride layer grown on the heterogeneous substrate; [0026]

FIG. 2

FIG. 2 is a sectional view of the gallium nitride layer separated from the heterogeneous substrate; [0027]

FIG. 3

FIG. 3 is a sectional view of a gallium nitride single crystal substrate according to a ﬁrst exemplary embodiment of the present invention; [0028]

FIG. 4

FIG. 4 is a sectional view of the gallium nitride single crystal substrate grown on a base substrate; [0029]

FIG. 5

FIG. 5 is a sectional view of the gallium nitride single crystal substrate separated from the base substrate; [0030]

FIG. 6

FIGS. 6 through 11 are sectional views of a method of processing the surface of the gallium nitride single crystal substrate according to an embodiment of the …

FIG. 7

FIG. 7, when the second side 112 of the gallium nitride single crystal substrate 110 is bonded to the support bed 200, the ﬁrst side 111 is planarized. As a …

FIG. 8

FIGS. 8 and 9, the gallium nitride single crystal substrate 110 is separated from the support bed 200 and the planarized ﬁrst side 111 is bonded to the surface …

FIG. 9

FIG. 10

FIG. 10, when the ﬁrst side 111 of the gallium nitride single crystal substrate 110 is bonded to the surface of the support bed 200, the second side 112 is …

FIG. 11

FIG. 11. [0051]

FIG. 12

FIG. 12 is a ﬂow chart for explaining a method of processing the surface of the gallium nitride single crystal substrate according to the ﬁrst exemplary …

FIG. 13

FIG. 13 is a ﬂow chart for explaining a method of processing the surface of the gallium nitride single crystal substrate according to a second exemplary …

FIG. 14

FIG. 14 is a sectional view for explaining a thickness of a damage layer of the gallium nitride single crystal substrate according to the second exemplary …

FIG. 15

FIGS. 15 A and 1 5 B are pictures of the damage layers on the top side and the bottom side of the gallium nitride single crystal substrate; and [0035]

FIG. 16

performance graph

FIG. 16 is a graph illustrating the result of measuring the transmittance of the gallium nitride single crystal substrate being polished.

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 3 dependent

1
IndependentGaNGaN single crystal substrate (both-sides polished)
A substrate comprising: a gallium nitride single crystal substrate which is provided by polishing both sides of the single crystal substrate, wherein when transmittance of the single crystal substrate is measured by using light having wavelengths within the range of 370 to 800 nanometers (nm), the transmittance is within the range of 65 to 90 %.
1. 2
  Dependent← claim 1GaNGaN single crystal substrate (both-sides polished)
  The substrate according to claim 1, wherein the light to be radiated on the single crystal substrate for measuring the transmittance is from ultraviolet rays to infrared rays.
3
IndependentGaN
A method of processing the surface of a gallium nitride single crystal original substrate, comprising steps of: planarizing the top side and the bottom side of a gallium nitride original substrate positioned on a support bed; radiating light having wavelengths within the range of 370 to 800 nm onto the planarized gallium nitride original substrate; measuring transmittance of the gallium nitride original substrate; and conﬁrming whether the transmittance is within the range of 65 to 90 %.
1. 4
  Dependent← claim 3GaN
  The method according to claim 3, further comprising: when the transmittance is out of the range of 65 to 90 %, additionally planarizing at least one of the top side or the bottom side of the gallium nitride original substrate.
2. 18
  Dependent← claim 3GaN
  SAMSUN 3.0-032 5. The method according to claim 3, wherein the planarizing step further comprises steps of: planarizing any one of the top side or the bottom side of the gallium nitride original substrate, turning over the original substrate and bonding the planarized one side to the support bed, and planarizing the other one of the top side or the bottom side of the gallium nitride original substrate.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN single crystal substrate (both-sides polished)

GaNsubstrate

Materials

Materials described outside the worked examples.

gallium nitride single crystal substrate

GaN

Substrate

sapphire

Al₂O₃

Base Substrate

Process steps

Additional fabrication and treatment steps described in the patent.

Surface Planarization Polishing

Step 1

Process details

description:Planarizing top and bottom sides of GaN original substrate on a support bed; transmittance measured with 370–800 nm light; if transmittance out of 65–90%, additional planarization performed; substrate may be flipped and re-bonded to polish the other side

Materials:

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

thickness

Thickness

FIG. 14 is a sectional view for explaining a thickness of a damage layer of the gallium nitride single crystal substrate according to the second exemplary …

Figure references

FIG. 14

device performance measurement

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
transmittance at 370–800 nm (claimed range)	65–90	GaN
thickness ratio DLa/DLb of damage layers on both sides	0.99–1.01

Tables

Table 1
Both Both Single Single Side Side Side Side Wavelength Polished Polished Polished
the gallium nitride single crystal substrate according to an embodiment of the present invention are shown in Table 1 and FIG.
p. 9

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GaN SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PROCESSING SURFACE OF GaN SINGLE CRYSTAL SUBSTRATE | Matter42 Literature