Patent
US 11,881,679 B2GALLIUM NITRIDE SUBSTRATE AND SEMICONDUCTOR COMPOSITE SUBSTRATE
Yu Xu, Jianfeng Wang, Ke Xu
SUZHOU NANOWIN SCIENCE AND TECHNOLOGY CO., LTD., Suzhou (CN)·Jan. 23, 2024·US
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Patent
Atlas literature
Patent
US 11,881,679 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a structural diagram of a two-photon fluorescence microscope.
FIG. 2 is a two-photon excitation photoluminescence image of a typical free-standing GaN substrate.
FIG. 3 shows a schematic diagram of a surface of a 50 free-standing GaN substrate according to a first embodi- ment.
FIG. 4 is a schematic diagram of formation of tilt dislo- cations.
FIG. 5d are schematic diagrams of a method 55 for fabricating a free-standing substrate according to the first embodiment.
FIG. 6 is a schematic structural diagram of an epitaxial laser.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate, wherein the gallium nitride substrate is obtained by means of non-periodic structure epitaxial growth; the gallium nitride substrate has a surface having a diameter not less than 50 mm; nine circular regions having a diameter not greater than 1 mm are taken on a surface of the gallium nitride substrate; positions of the nine circular regions are respectively distributed at a center position and eight surrounding positions of the surface of the gallium nitride substrate; threading dislocation densities and threading dislocation tilt angles are calculated at the nine circular regions using a multi-photon excitation photolumi-nescence spectrum; an average value of products of the threading dislocation densities in the nine circular regions and tangent values of the threading dislocation tilt angles is not greater than 1E₆ cm⁻²; and a quotient of a difference between a maximum value and a minimum value of the products of the threading dislocation densities in the nine circular regions and the tangent values of the threading dislocation tilt angles divided by the average value is not greater than 50%.
The gallium nitride substrate according to claim 1, wherein the gallium nitride substrate has a surface having a diameter not less than 100 mm, and the average value of the products of the threading dislocation densities in the nine circular regions and the tangent values of the threading dislocation tilt angles is not greater than 5E₅ cm⁻².
The gallium nitride substrate according to claim 1, wherein the gallium nitride substrate has a surface having a diameter not less than 100 mm, and the quotient of the difference between the maximum value and the minimum value of the products of the threading dislocation densities in the nine circular regions and the tangent values of the threading dislocation tilt angles divided by the average value is not greater than 40%.
The gallium nitride substrate according to claim 1, wherein the eight surrounding positions are located on a same circumference and are distributed along the circum-ference at an equal interval.
A semiconductor composite substrate using the gallium nitride substrate according to claim 1 as a supporting substrate. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride free-standing substrate
semiconductor composite substrate
Materials described outside the worked examples.
gallium nitride
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average value of products of threading dislocation densities and tangent values of threading dislocation tilt angles (≤1E6 cm-2, diameter ≥50 mm) | — | GaN |
quotient of (max-min)/average of threading dislocation density × tan(tilt angle) products across nine regions (≤50%) |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 16
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,881,679 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a structural diagram of a two-photon fluorescence microscope.
FIG. 2 is a two-photon excitation photoluminescence image of a typical free-standing GaN substrate.
FIG. 3 shows a schematic diagram of a surface of a 50 free-standing GaN substrate according to a first embodi- ment.
FIG. 4 is a schematic diagram of formation of tilt dislo- cations.
FIG. 5d are schematic diagrams of a method 55 for fabricating a free-standing substrate according to the first embodiment.
FIG. 6 is a schematic structural diagram of an epitaxial laser.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate, wherein the gallium nitride substrate is obtained by means of non-periodic structure epitaxial growth; the gallium nitride substrate has a surface having a diameter not less than 50 mm; nine circular regions having a diameter not greater than 1 mm are taken on a surface of the gallium nitride substrate; positions of the nine circular regions are respectively distributed at a center position and eight surrounding positions of the surface of the gallium nitride substrate; threading dislocation densities and threading dislocation tilt angles are calculated at the nine circular regions using a multi-photon excitation photolumi-nescence spectrum; an average value of products of the threading dislocation densities in the nine circular regions and tangent values of the threading dislocation tilt angles is not greater than 1E₆ cm⁻²; and a quotient of a difference between a maximum value and a minimum value of the products of the threading dislocation densities in the nine circular regions and the tangent values of the threading dislocation tilt angles divided by the average value is not greater than 50%.
The gallium nitride substrate according to claim 1, wherein the gallium nitride substrate has a surface having a diameter not less than 100 mm, and the average value of the products of the threading dislocation densities in the nine circular regions and the tangent values of the threading dislocation tilt angles is not greater than 5E₅ cm⁻².
The gallium nitride substrate according to claim 1, wherein the gallium nitride substrate has a surface having a diameter not less than 100 mm, and the quotient of the difference between the maximum value and the minimum value of the products of the threading dislocation densities in the nine circular regions and the tangent values of the threading dislocation tilt angles divided by the average value is not greater than 40%.
The gallium nitride substrate according to claim 1, wherein the eight surrounding positions are located on a same circumference and are distributed along the circum-ference at an equal interval.
A semiconductor composite substrate using the gallium nitride substrate according to claim 1 as a supporting substrate. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride free-standing substrate
semiconductor composite substrate
Materials described outside the worked examples.
gallium nitride
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average value of products of threading dislocation densities and tangent values of threading dislocation tilt angles (≤1E6 cm-2, diameter ≥50 mm) | — | GaN |
quotient of (max-min)/average of threading dislocation density × tan(tilt angle) products across nine regions (≤50%) |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 16
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,881,679 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a structural diagram of a two-photon fluorescence microscope.
FIG. 2 is a two-photon excitation photoluminescence image of a typical free-standing GaN substrate.
FIG. 3 shows a schematic diagram of a surface of a 50 free-standing GaN substrate according to a first embodi- ment.
FIG. 4 is a schematic diagram of formation of tilt dislo- cations.
FIG. 5d are schematic diagrams of a method 55 for fabricating a free-standing substrate according to the first embodiment.
FIG. 6 is a schematic structural diagram of an epitaxial laser.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate, wherein the gallium nitride substrate is obtained by means of non-periodic structure epitaxial growth; the gallium nitride substrate has a surface having a diameter not less than 50 mm; nine circular regions having a diameter not greater than 1 mm are taken on a surface of the gallium nitride substrate; positions of the nine circular regions are respectively distributed at a center position and eight surrounding positions of the surface of the gallium nitride substrate; threading dislocation densities and threading dislocation tilt angles are calculated at the nine circular regions using a multi-photon excitation photolumi-nescence spectrum; an average value of products of the threading dislocation densities in the nine circular regions and tangent values of the threading dislocation tilt angles is not greater than 1E₆ cm⁻²; and a quotient of a difference between a maximum value and a minimum value of the products of the threading dislocation densities in the nine circular regions and the tangent values of the threading dislocation tilt angles divided by the average value is not greater than 50%.
The gallium nitride substrate according to claim 1, wherein the gallium nitride substrate has a surface having a diameter not less than 100 mm, and the average value of the products of the threading dislocation densities in the nine circular regions and the tangent values of the threading dislocation tilt angles is not greater than 5E₅ cm⁻².
The gallium nitride substrate according to claim 1, wherein the gallium nitride substrate has a surface having a diameter not less than 100 mm, and the quotient of the difference between the maximum value and the minimum value of the products of the threading dislocation densities in the nine circular regions and the tangent values of the threading dislocation tilt angles divided by the average value is not greater than 40%.
The gallium nitride substrate according to claim 1, wherein the eight surrounding positions are located on a same circumference and are distributed along the circum-ference at an equal interval.
A semiconductor composite substrate using the gallium nitride substrate according to claim 1 as a supporting substrate. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride free-standing substrate
semiconductor composite substrate
Materials described outside the worked examples.
gallium nitride
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average value of products of threading dislocation densities and tangent values of threading dislocation tilt angles (≤1E6 cm-2, diameter ≥50 mm) | — | GaN |
quotient of (max-min)/average of threading dislocation density × tan(tilt angle) products across nine regions (≤50%) |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 16
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,881,679 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a structural diagram of a two-photon fluorescence microscope.
FIG. 2 is a two-photon excitation photoluminescence image of a typical free-standing GaN substrate.
FIG. 3 shows a schematic diagram of a surface of a 50 free-standing GaN substrate according to a first embodi- ment.
FIG. 4 is a schematic diagram of formation of tilt dislo- cations.
FIG. 5d are schematic diagrams of a method 55 for fabricating a free-standing substrate according to the first embodiment.
FIG. 6 is a schematic structural diagram of an epitaxial laser.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate, wherein the gallium nitride substrate is obtained by means of non-periodic structure epitaxial growth; the gallium nitride substrate has a surface having a diameter not less than 50 mm; nine circular regions having a diameter not greater than 1 mm are taken on a surface of the gallium nitride substrate; positions of the nine circular regions are respectively distributed at a center position and eight surrounding positions of the surface of the gallium nitride substrate; threading dislocation densities and threading dislocation tilt angles are calculated at the nine circular regions using a multi-photon excitation photolumi-nescence spectrum; an average value of products of the threading dislocation densities in the nine circular regions and tangent values of the threading dislocation tilt angles is not greater than 1E₆ cm⁻²; and a quotient of a difference between a maximum value and a minimum value of the products of the threading dislocation densities in the nine circular regions and the tangent values of the threading dislocation tilt angles divided by the average value is not greater than 50%.
The gallium nitride substrate according to claim 1, wherein the gallium nitride substrate has a surface having a diameter not less than 100 mm, and the average value of the products of the threading dislocation densities in the nine circular regions and the tangent values of the threading dislocation tilt angles is not greater than 5E₅ cm⁻².
The gallium nitride substrate according to claim 1, wherein the gallium nitride substrate has a surface having a diameter not less than 100 mm, and the quotient of the difference between the maximum value and the minimum value of the products of the threading dislocation densities in the nine circular regions and the tangent values of the threading dislocation tilt angles divided by the average value is not greater than 40%.
The gallium nitride substrate according to claim 1, wherein the eight surrounding positions are located on a same circumference and are distributed along the circum-ference at an equal interval.
A semiconductor composite substrate using the gallium nitride substrate according to claim 1 as a supporting substrate. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride free-standing substrate
semiconductor composite substrate
Materials described outside the worked examples.
gallium nitride
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average value of products of threading dislocation densities and tangent values of threading dislocation tilt angles (≤1E6 cm-2, diameter ≥50 mm) | — | GaN |
quotient of (max-min)/average of threading dislocation density × tan(tilt angle) products across nine regions (≤50%) |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 16
Related documents with shared materials, methods, properties, or citations.
GaN |
average value of products of threading dislocation densities and tangent values of threading dislocation tilt angles (≤5E5 cm-2, diameter ≥100 mm) | — | GaN |
quotient of (max-min)/average of threading dislocation density × tan(tilt angle) products across nine regions (≤40%, diameter ≥100 mm) | — | GaN |
Thickness | 50–200 um | — |
Thickness | 0.5–5 um | — |
Thickness | 50–100 nm | — |
Thickness | ≤ 50 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 1 um | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 1000000 cm | — |
Thickness | ≥ 500000 cm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 150 um | — |
Cited non-patent literature · 2
GaN |
average value of products of threading dislocation densities and tangent values of threading dislocation tilt angles (≤5E5 cm-2, diameter ≥100 mm) | — | GaN |
quotient of (max-min)/average of threading dislocation density × tan(tilt angle) products across nine regions (≤40%, diameter ≥100 mm) | — | GaN |
Thickness | 50–200 um | — |
Thickness | 0.5–5 um | — |
Thickness | 50–100 nm | — |
Thickness | ≤ 50 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 1 um | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 1000000 cm | — |
Thickness | ≥ 500000 cm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 150 um | — |
Cited non-patent literature · 2
GaN |
average value of products of threading dislocation densities and tangent values of threading dislocation tilt angles (≤5E5 cm-2, diameter ≥100 mm) | — | GaN |
quotient of (max-min)/average of threading dislocation density × tan(tilt angle) products across nine regions (≤40%, diameter ≥100 mm) | — | GaN |
Thickness | 50–200 um | — |
Thickness | 0.5–5 um | — |
Thickness | 50–100 nm | — |
Thickness | ≤ 50 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 1 um | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 1000000 cm | — |
Thickness | ≥ 500000 cm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 150 um | — |
Cited non-patent literature · 2
GaN |
average value of products of threading dislocation densities and tangent values of threading dislocation tilt angles (≤5E5 cm-2, diameter ≥100 mm) | — | GaN |
quotient of (max-min)/average of threading dislocation density × tan(tilt angle) products across nine regions (≤40%, diameter ≥100 mm) | — | GaN |
Thickness | 50–200 um | — |
Thickness | 0.5–5 um | — |
Thickness | 50–100 nm | — |
Thickness | ≤ 50 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 1 um | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 1000000 cm | — |
Thickness | ≥ 500000 cm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 150 um | — |
Cited non-patent literature · 2