Patent
US 8,853,672GALLIUM NITRIDE SUBSTRATE AND EPITAXIAL WAFER
Shunsuke Yamamoto
US
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Patent
Atlas literature
Patent
US 8,853,672Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a three-dimensional optical profiler image showing scratches of a surface of a gallium nitride substrate according to an embodiment of the invention;
FIG.2 is a cross-sectional view schematically showing a HVPE growth device according to Example of the invention; and
FIG.3 is a cross-sectional view schematically showing an epitaxial wafer according to Example of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The gallium nitride substrate according to claim 1, wherein all the physical level SVG 13794539.03-11-2013.HE₆BW₅SPPXXIFW3.CLM30265667.15.367.1552.2289.1608.svg 0.187 6.407 Chemistry Black and white 1
The gallium nitride substrate according to claim 2, wherein all the physical level 2 differences have a dimension of not more than 2 m. 1
An epitaxial wafer, comprising: 2 the gallium nitride substrate according to claim 1; 3 a buffer layer on the gallium nitride substrate; and 4 an InGaN quantum well structure including an InGaN quantum well layer on the 5 buffer layer. 31
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
epitaxial wafer with InGaN quantum well structure
Materials described outside the worked examples.
gallium nitride substrate
GaN
buffer layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 332.6–397.3 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,853,672Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a three-dimensional optical profiler image showing scratches of a surface of a gallium nitride substrate according to an embodiment of the invention;
FIG.2 is a cross-sectional view schematically showing a HVPE growth device according to Example of the invention; and
FIG.3 is a cross-sectional view schematically showing an epitaxial wafer according to Example of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The gallium nitride substrate according to claim 1, wherein all the physical level SVG 13794539.03-11-2013.HE₆BW₅SPPXXIFW3.CLM30265667.15.367.1552.2289.1608.svg 0.187 6.407 Chemistry Black and white 1
The gallium nitride substrate according to claim 2, wherein all the physical level 2 differences have a dimension of not more than 2 m. 1
An epitaxial wafer, comprising: 2 the gallium nitride substrate according to claim 1; 3 a buffer layer on the gallium nitride substrate; and 4 an InGaN quantum well structure including an InGaN quantum well layer on the 5 buffer layer. 31
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
epitaxial wafer with InGaN quantum well structure
Materials described outside the worked examples.
gallium nitride substrate
GaN
buffer layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 332.6–397.3 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,853,672Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a three-dimensional optical profiler image showing scratches of a surface of a gallium nitride substrate according to an embodiment of the invention;
FIG.2 is a cross-sectional view schematically showing a HVPE growth device according to Example of the invention; and
FIG.3 is a cross-sectional view schematically showing an epitaxial wafer according to Example of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The gallium nitride substrate according to claim 1, wherein all the physical level SVG 13794539.03-11-2013.HE₆BW₅SPPXXIFW3.CLM30265667.15.367.1552.2289.1608.svg 0.187 6.407 Chemistry Black and white 1
The gallium nitride substrate according to claim 2, wherein all the physical level 2 differences have a dimension of not more than 2 m. 1
An epitaxial wafer, comprising: 2 the gallium nitride substrate according to claim 1; 3 a buffer layer on the gallium nitride substrate; and 4 an InGaN quantum well structure including an InGaN quantum well layer on the 5 buffer layer. 31
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
epitaxial wafer with InGaN quantum well structure
Materials described outside the worked examples.
gallium nitride substrate
GaN
buffer layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 332.6–397.3 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,853,672Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a three-dimensional optical profiler image showing scratches of a surface of a gallium nitride substrate according to an embodiment of the invention;
FIG.2 is a cross-sectional view schematically showing a HVPE growth device according to Example of the invention; and
FIG.3 is a cross-sectional view schematically showing an epitaxial wafer according to Example of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The gallium nitride substrate according to claim 1, wherein all the physical level SVG 13794539.03-11-2013.HE₆BW₅SPPXXIFW3.CLM30265667.15.367.1552.2289.1608.svg 0.187 6.407 Chemistry Black and white 1
The gallium nitride substrate according to claim 2, wherein all the physical level 2 differences have a dimension of not more than 2 m. 1
An epitaxial wafer, comprising: 2 the gallium nitride substrate according to claim 1; 3 a buffer layer on the gallium nitride substrate; and 4 an InGaN quantum well structure including an InGaN quantum well layer on the 5 buffer layer. 31
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
epitaxial wafer with InGaN quantum well structure
Materials described outside the worked examples.
gallium nitride substrate
GaN
buffer layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 332.6–397.3 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
InGaN quantum well layer
InGaN
sapphire substrate
TiN thin film
TiN
| 9–432.4 nm |
| — |
Thickness | ≤ 25 mm | — |
Voltage | ≤ 1 V | — |
Voltage | ≤ 2 V | — |
Thickness | ≥ 1 mm | — |
Voltage | ≥ 0.2 V | — |
InGaN quantum well layer
InGaN
sapphire substrate
TiN thin film
TiN
| 9–432.4 nm |
| — |
Thickness | ≤ 25 mm | — |
Voltage | ≤ 1 V | — |
Voltage | ≤ 2 V | — |
Thickness | ≥ 1 mm | — |
Voltage | ≥ 0.2 V | — |
InGaN quantum well layer
InGaN
sapphire substrate
TiN thin film
TiN
| 9–432.4 nm |
| — |
Thickness | ≤ 25 mm | — |
Voltage | ≤ 1 V | — |
Voltage | ≤ 2 V | — |
Thickness | ≥ 1 mm | — |
Voltage | ≥ 0.2 V | — |
InGaN quantum well layer
InGaN
sapphire substrate
TiN thin film
TiN
| 9–432.4 nm |
| — |
Thickness | ≤ 25 mm | — |
Voltage | ≤ 1 V | — |
Voltage | ≤ 2 V | — |
Thickness | ≥ 1 mm | — |
Voltage | ≥ 0.2 V | — |