METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES

David P. Bour

Patent

Atlas literature

Patent

US 8,853,063

METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES

David P. Bour, Thomas R. Prunty, Linda Romano, Richard J. Brown et al.

AVOGY, INC.·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 12 dependent

1
Independentn-type III-nitride-based epitaxial layergroup III element precursor gasgroup V element precursor gasn-type III-nitride drift layer for diode
A method of growing an n-type I II -nitride-based epitaxial layer for a drift layer of a diode, the method comprising: providing a substrate in an epitaxial growth reactor; forming a masking material coupled to a portion of a surface of the substrate; ﬂowing a ﬁrst gas into the epitaxial growth reactor, wherein the ﬁrst gas includes a group III element and carbon; and ﬂowing a second gas into the epitaxial growth reactor, wherein: the second gas includes a group V element; and a molar ratio of the group V element to the group III element is at least 5,000; and growing the n-type I II -nitride-based epitaxial layer to form the drift layer of the diode.
1. 2
  Dependent← claim 1Ga(CH₃)3Ga(C₂H₅)3
  The method of claim 1 wherein the ﬁrst gas comprises at least one of t ri -methyl gallium or triethyl gallium.
2. 3
  Dependent← claim 1NH₃
  The method of claim 1 wherein the second gas comprises ammonia.
3. 4
  Dependent← claim 1n-type III-nitride-based epitaxial layer
  The method of claim 1 wherein growing the n-type I II -nitride- based epitaxial layer comprises a metal-organic chemical vapor deposition process.
4. 5
  Dependent← claim 1n-type III-nitride-based epitaxial layer
  The method of claim 1 wherein the n-type I II -nitride-based epitaxial layer has a carbon concentration less than 1x 1016 cm⁻³.
5. 6
  Dependent← claim 1n-type III-nitride-based epitaxial layer
  The method of claim 1 wherein a growth rate of the n-type III- nitride-based epitaxial layer is between 1 p m/hr and 2 pm/hr. Page 2 of 5 App l. No. 14/061,741 PATENT Amdt. dated 93444-891183 (0023 10 US) Response to Oﬃce Action of
6. 7
  Dependent← claim 1n-type III-nitride drift layer for diode
  The method of claim 1 wherein a thickness of the drift layer is greater than 1 m.
8
Independentn-type GaN-based substrateepitaxial n-type drift layer (GaN-based)GaN-based diode with epitaxial n-type drift layer
A method of manufacturing a diode, the method comprising: providing an n-type GaN-based substrate having a ﬁrst surface and a ﬁrst electrical contact opposing the ﬁrst surface; forming an epitaxial n-type drift layer above the ﬁrst surface, the epitaxial n-type drift layer having a bottom surface and a top surface, wherein: the bottom surface is closer to the ﬁrst surface than the top surface; the epitaxial n-type drift layer is conﬁgured to conduct current; gases used in forming the epitaxial n-type drift layer include a group V element and a group III element; and a molar ratio of the group V element to the group III element is at least 5,000; and forming a second electrical contact above the top surface of the epitaxial n-type drift layer.
1. 9
  Dependent← claim 8NH₃
  The method of claim 8 wherein the gas including the group V element comprises at least one of ammonia or cracked ammonia.
2. 10
  Dependent← claim 8Ga(CH₃)3Ga(C₂H₅)3
  The method of claim 8 wherein the gas including the group III element comprises at least one of tri-methyl gallium, tri-ethyl gallium, cracked t ri -methyl gallium, or cracked tri-ethyl gallium.
3. 11
  Dependent← claim 8epitaxial n-type drift layer (GaN-based)
  The method of claim 8 wherein the epitaxial n-type drift layer has a carbon concentration less than 1x 1016 cm⁻³.
4. 12
  Dependent← claim 8epitaxial n-type drift layer (GaN-based)
  The method of claim 8 wherein a growth rate of the n-type drift layer is between 1 p m/hr and 2 pm/hr.
5. 13
  Dependent← claim 8n-type GaN-based substrate
  The method of claim 8 wherein the n-type GaN-based substrate comprises an n-type GaN substrate.
6. 14
  Dependent← claim 8
  The method of claim 8 wherein the a molar ratio of the group V element to the group III element is at least 10,000. Page 3 of 5 App l. No. 14/061,741 PATENT Amdt. dated 93444-891183 (0023 10 US) Response to Oﬃce Action of

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

n-type III-nitride drift layer for diode

n-type III-nitride-based epitaxial layerdrift layer

substratesubstrate

GaN-based diode with epitaxial n-type drift layer

top_contacttop contact

epitaxial n-type drift layer (GaN-based)drift layer

n-type GaN-based substratesubstrate

Materials

Materials described outside the worked examples.

n-type III-nitride-based epitaxial layer

Drift Layer Epitaxial Film

group III element precursor gas

Precursor Gas Group III

group V element precursor gas

Precursor Gas Group V

Process steps

Additional fabrication and treatment steps described in the patent.

Mocvd Growth

Step 1

Process details

first gas:group III element and carbon

second gas:group V element

masking material:formed on portion of substrate surface

V III molar ratio min:5000

growth rate um per hr:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
carbon concentration upper bound in n-type III-nitride drift layer	≤ 10000000000000000 cm⁻³	n-type III-nitride-based epitaxial layer
carbon concentration upper bound in epitaxial n-type GaN drift layer

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES | Matter42 Literature