Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Can Cao; Vijay Gopal Thirupakuzi Vangipuram; Abdul Mukit; Motahareh Helli; Jinwoo Hwang; Hongping Zhao; Wu Lu

Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Can Cao, Vijay Gopal Thirupakuzi Vangipuram, Abdul Mukit, Motahareh Helli et al.

2026·arXiv:2604.03485

Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Can Cao, Vijay Gopal Thirupakuzi Vangipuram, Abdul Mukit, Motahareh Helli et al.

2026·arXiv:2604.03485

Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Can Cao, Vijay Gopal Thirupakuzi Vangipuram, Abdul Mukit, Motahareh Helli et al.

2026·arXiv:2604.03485

Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Can Cao, Vijay Gopal Thirupakuzi Vangipuram, Abdul Mukit, Motahareh Helli et al.

2026·arXiv:2604.03485

Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Can Cao, Vijay Gopal Thirupakuzi Vangipuram, Abdul Mukit, Motahareh Helli et al.

2026·arXiv:2604.03485

Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Can Cao, Vijay Gopal Thirupakuzi Vangipuram, Abdul Mukit, Motahareh Helli et al.

2026·arXiv:2604.03485

Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Can Cao, Vijay Gopal Thirupakuzi Vangipuram, Abdul Mukit, Motahareh Helli et al.

2026·arXiv:2604.03485

Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Can Cao, Vijay Gopal Thirupakuzi Vangipuram, Abdul Mukit, Motahareh Helli et al.

2026·arXiv:2604.03485

All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabricated device on an ammonothermal Mn-doped semi-insulating GaN substrate.

3 preparations4 characterizations17 properties5 figures

ExperimentalAlScNStudied MaterialGaNStudied MaterialAlNStudied MaterialSiNxSubstrate / DielectricGaNSubstrate / DielectricTiCapping Or ContactAlCapping Or ContactNiCapping Or ContactAuCapping Or Contact

All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabricated device on an ammonothermal Mn-doped semi-insulating GaN substrate.

3 preparations4 characterizations17 properties5 figures

All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabricated device on an ammonothermal Mn-doped semi-insulating GaN substrate.

3 preparations4 characterizations17 properties5 figures

All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabricated device on an ammonothermal Mn-doped semi-insulating GaN substrate.

3 preparations4 characterizations17 properties5 figures

Type	Label	Value	Material	Sample	Source
Fet Sheet Resistance	sheet resistance	685ohm/sq	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Fet Carrier Concentration	sheet carrier density	11200000000000cm⁻²	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Fet Mobility	mobility	813cm²/Vs	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Contact Resistance	ohmic contact resistance	0.55ohm·mm	Ti Al Ni Au	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Surface Roughness	Ra RMS	0.372nm	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Electron Density	simulated 2DEG density	20900000000000cm⁻²	AlScN GaN AlN SiNx GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Maximum Drain Current Density	max drain current density	1A/mm	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Fet On Off Ratio	I_on/I_off	200000	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Breakdown Voltage	three-terminal breakdown voltage	63V	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Subthreshold Swing	subthreshold swing	63mV/dec	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Current Dispersion	current dispersion	7.8%	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Trap Density	Dit	211000000000cm⁻² eV^-1	AlScN GaN AlN SiNx GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Cutoff Frequency	fT	25.8GHz	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Maximum Oscillation Frequency	fmax	51.1GHz	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Output Power Density	load-pull output power density	4.04W/mm	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Power Added Efficiency	PAE	22.7%	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Noise Figure	minimum noise figure	<2.5dB	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—

Type	Label	Value	Material	Sample	Source
Fet Sheet Resistance	sheet resistance	685ohm/sq	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Fet Carrier Concentration	sheet carrier density	11200000000000cm⁻²	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Fet Mobility	mobility	813cm²/Vs	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Contact Resistance	ohmic contact resistance	0.55ohm·mm	Ti Al Ni Au	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Surface Roughness	Ra RMS	0.372nm	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Electron Density	simulated 2DEG density	20900000000000cm⁻²	AlScN GaN AlN SiNx GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Maximum Drain Current Density	max drain current density	1A/mm	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Fet On Off Ratio	I_on/I_off	200000	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Breakdown Voltage	three-terminal breakdown voltage	63V	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Subthreshold Swing	subthreshold swing	63mV/dec	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Current Dispersion	current dispersion	7.8%	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Trap Density	Dit	211000000000cm⁻² eV^-1	AlScN GaN AlN SiNx GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Cutoff Frequency	fT	25.8GHz	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Maximum Oscillation Frequency	fmax	51.1GHz	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Output Power Density	load-pull output power density	4.04W/mm	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Power Added Efficiency	PAE	22.7%	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Noise Figure	minimum noise figure	<2.5dB	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—

Type	Label	Value	Material	Sample	Source
Fet Sheet Resistance	sheet resistance	685ohm/sq	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Fet Carrier Concentration	sheet carrier density	11200000000000cm⁻²	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Fet Mobility	mobility	813cm²/Vs	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Contact Resistance	ohmic contact resistance	0.55ohm·mm	Ti Al Ni Au	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Surface Roughness	Ra RMS	0.372nm	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Electron Density	simulated 2DEG density	20900000000000cm⁻²	AlScN GaN AlN SiNx GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Maximum Drain Current Density	max drain current density	1A/mm	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Fet On Off Ratio	I_on/I_off	200000	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Breakdown Voltage	three-terminal breakdown voltage	63V	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Subthreshold Swing	subthreshold swing	63mV/dec	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Current Dispersion	current dispersion	7.8%	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Trap Density	Dit	211000000000cm⁻² eV^-1	AlScN GaN AlN SiNx GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Cutoff Frequency	fT	25.8GHz	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Maximum Oscillation Frequency	fmax	51.1GHz	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Output Power Density	load-pull output power density	4.04W/mm	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Power Added Efficiency	PAE	22.7%	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Noise Figure	minimum noise figure	<2.5dB	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—

Type	Label	Value	Material	Sample	Source
Fet Sheet Resistance	sheet resistance	685ohm/sq	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Fet Carrier Concentration	sheet carrier density	11200000000000cm⁻²	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Fet Mobility	mobility	813cm²/Vs	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Contact Resistance	ohmic contact resistance	0.55ohm·mm	Ti Al Ni Au	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Surface Roughness	Ra RMS	0.372nm	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Electron Density	simulated 2DEG density	20900000000000cm⁻²	AlScN GaN AlN SiNx GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Maximum Drain Current Density	max drain current density	1A/mm	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Fet On Off Ratio	I_on/I_off	200000	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Breakdown Voltage	three-terminal breakdown voltage	63V	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Subthreshold Swing	subthreshold swing	63mV/dec	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Current Dispersion	current dispersion	7.8%	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Trap Density	Dit	211000000000cm⁻² eV^-1	AlScN GaN AlN SiNx GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Cutoff Frequency	fT	25.8GHz	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Maximum Oscillation Frequency	fmax	51.1GHz	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Output Power Density	load-pull output power density	4.04W/mm	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Power Added Efficiency	PAE	22.7%	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—
Noise Figure	minimum noise figure	<2.5dB	AlScN GaN AlN GaN	All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabri	—

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Samples

All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabricated device on an ammonothermal Mn-doped semi-insulating GaN substrate.

Materials

Growth

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabricated device on an ammonothermal Mn-doped semi-insulating GaN substrate.

Materials

Growth

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabricated device on an ammonothermal Mn-doped semi-insulating GaN substrate.

Materials

Growth

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

All MOCVD-grown AlScN/GaN MIS-HEMT heterostructure and fabricated device on an ammonothermal Mn-doped semi-insulating GaN substrate.

Materials

Growth

Processing

Characterization

Properties

Simulations

Why these are connected