Patent
US 10,896,818STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
HAN, Jung
15 February 2018·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,896,818Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 A is a transmission electron micrograph taken with a diffraction vector of <0002>;
FIGS. 2H is a scanning-electron micrograph showing, in plan view, gallium- polar semipolar GaN stripes formed on a portion of a patterned sapphire substrate, …
FIG. 3 is a scanning-electron micrograph showing a cross-section view of coalesced semipolar GaN formed on a patterned sapphire substrate, according to some …
FIG. 4A is a transmission-electron micrograph showing stacking faults in a coalesced epitaxial layer of GaN on a patterned sapphire substrate, according to …
FIG. 5 shows a cathodoluminescence image recorded from a coalesced epitaxial layer of semipolar GaN formed on a patterned sapphire substrate, according to some …
FIG. 6F is a scanning electron micrograph of a regrown, coalesced layer of GaN on a patterned sapphire substrate, according to some embodiments;
FIG. 7A illustrates that other orientations (e.g., nonpolar) of a I II -nitride material may be produced according to the present embodiments;
FIG. 8 is a scanning electron micrograph of gallium-polar semipolar GaN regrown on a patterned sapphire substrate where stacking faults associated with growth …
FIG. 9 shows a cathodoluminescence image recorded from a coalesced epitaxial layer of semipolar GaN fo rm ed on a patterned sapphire substrate with reduced …
FIG. 10 B is a transmission electron micrograph taken with a diffraction vector of <1010>; and
FIG. 11 is a scanning electron micrograph of gallium-polar semipolar GaN grown on a patterned sapphire substrate where stacking faults associated with growth …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-16. Canceled
Canceled
A method for forming an epitaxial layer of III -nitride material on a patterned foreign substrate, the method comprising: receiving the patterned foreign substrate having separated III-nitride crystals formed thereon; and further growing the III -nitride crystals to include an impurity dopant; and eliminating a crystal growth facet on the further grown III -nitride crystals that forms stacking faults. Original
The method of claim 17, wherein further growing the III -nitride crystals comprises growing GaN or an alloy of GaN. Original
The method of claim 17, wherein further growing the III -nitride crystals comprises using Ge as the impurity dopant. Previously presented
The method of claim 17, wherein the crystal growth facet that is eliminated is [[the]] a (0001) facet of GaN. Currently amended
The method of claim 17, further comprising: continuing the growth of the I II -nitride crystals until the separated I II -nitride crystals coalesce into a continuous layer across the patterned foreign substrate; and further growing the I II -nitride crystals without the impurity dopant. Currently amended
The method of claim [[17]] 18, wherein further growing the I II -nitride crystals comprises using Ge as the impurity dopant to dope the GaN or the alloy of GaN with a dopant density between approximately 1x10 18 cm⁻³ and approximately 1x10 19 cm⁻³. Currently amended
The method of claim [[17]] 18, wherein further growing the I II -nitride crystals comprises metal-organic chemical vapor deposition of the GaN or the alloy of GaN on the separated III-nitride crystals. Currently amended
The method of claim 22, wherein a flow rate of NH 3 gas during the deposition is between approximately 0.5 slm and approximately 5 slm. Original
The method of claim 22, wherein a flow rate of trimethylgallium or triethylgallium gas during the deposition is between approximately 10 i mol/min and approximately 200 i mol/min. Original
The method of claim 22, wherein a temperature during the deposition is between approximately 950 ° C and approximately 1070 °C. Currently amended
The method of claim 22, wherein a pressure during the deposition is between approximately 50 mbar and approximately 400 mbar. Currently amended
A substrate comprising: a patterned substrate having separated crystal growth facets with masked regions of the substrate's surface between the separated crystal growth facets; and a first region of I II -nitride material formed above the patterned substrate containing an impurity dopant that eliminates a crystal growth facet of the I II -nitride material that forms stacking faults when the I II -nitride material grows over the masked regions. Withdrawn
The substrate of claim 30, wherein the I II -nitride material comprises GaN or an alloy of GaN. Withdrawn
(Withdrawn-Previously presented) The substrate of claim 30, further comprising a second region of I II -nitride material not containing the impurity dopant formed above the first region. Withdrawn
(Withdrawn-Previously presented) The substrate of claim 30, wherein the impurity dopant is Ge. Withdrawn
(Withdrawn-Previously presented) The substrate of claim 30, wherein the masked regions comprise a conformal oxide coating formed over the patterned substrate. Withdrawn
Canceled
Canceled
Canceled
40-50. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
epitaxial III-nitride layer on patterned foreign substrate
Materials described outside the worked examples.
III-nitride material
impurity dopant
GaN or alloy of GaN
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 0 A is a transmission electron micrograph taken with a diffraction vector of <0002>;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dopant Density | 1000000000000000000–10000000000000000000 | Ge |
Pressure | 10–100 mTorr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,896,818Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 A is a transmission electron micrograph taken with a diffraction vector of <0002>;
FIGS. 2H is a scanning-electron micrograph showing, in plan view, gallium- polar semipolar GaN stripes formed on a portion of a patterned sapphire substrate, …
FIG. 3 is a scanning-electron micrograph showing a cross-section view of coalesced semipolar GaN formed on a patterned sapphire substrate, according to some …
FIG. 4A is a transmission-electron micrograph showing stacking faults in a coalesced epitaxial layer of GaN on a patterned sapphire substrate, according to …
FIG. 5 shows a cathodoluminescence image recorded from a coalesced epitaxial layer of semipolar GaN formed on a patterned sapphire substrate, according to some …
FIG. 6F is a scanning electron micrograph of a regrown, coalesced layer of GaN on a patterned sapphire substrate, according to some embodiments;
FIG. 7A illustrates that other orientations (e.g., nonpolar) of a I II -nitride material may be produced according to the present embodiments;
FIG. 8 is a scanning electron micrograph of gallium-polar semipolar GaN regrown on a patterned sapphire substrate where stacking faults associated with growth …
FIG. 9 shows a cathodoluminescence image recorded from a coalesced epitaxial layer of semipolar GaN fo rm ed on a patterned sapphire substrate with reduced …
FIG. 10 B is a transmission electron micrograph taken with a diffraction vector of <1010>; and
FIG. 11 is a scanning electron micrograph of gallium-polar semipolar GaN grown on a patterned sapphire substrate where stacking faults associated with growth …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-16. Canceled
Canceled
A method for forming an epitaxial layer of III -nitride material on a patterned foreign substrate, the method comprising: receiving the patterned foreign substrate having separated III-nitride crystals formed thereon; and further growing the III -nitride crystals to include an impurity dopant; and eliminating a crystal growth facet on the further grown III -nitride crystals that forms stacking faults. Original
The method of claim 17, wherein further growing the III -nitride crystals comprises growing GaN or an alloy of GaN. Original
The method of claim 17, wherein further growing the III -nitride crystals comprises using Ge as the impurity dopant. Previously presented
The method of claim 17, wherein the crystal growth facet that is eliminated is [[the]] a (0001) facet of GaN. Currently amended
The method of claim 17, further comprising: continuing the growth of the I II -nitride crystals until the separated I II -nitride crystals coalesce into a continuous layer across the patterned foreign substrate; and further growing the I II -nitride crystals without the impurity dopant. Currently amended
The method of claim [[17]] 18, wherein further growing the I II -nitride crystals comprises using Ge as the impurity dopant to dope the GaN or the alloy of GaN with a dopant density between approximately 1x10 18 cm⁻³ and approximately 1x10 19 cm⁻³. Currently amended
The method of claim [[17]] 18, wherein further growing the I II -nitride crystals comprises metal-organic chemical vapor deposition of the GaN or the alloy of GaN on the separated III-nitride crystals. Currently amended
The method of claim 22, wherein a flow rate of NH 3 gas during the deposition is between approximately 0.5 slm and approximately 5 slm. Original
The method of claim 22, wherein a flow rate of trimethylgallium or triethylgallium gas during the deposition is between approximately 10 i mol/min and approximately 200 i mol/min. Original
The method of claim 22, wherein a temperature during the deposition is between approximately 950 ° C and approximately 1070 °C. Currently amended
The method of claim 22, wherein a pressure during the deposition is between approximately 50 mbar and approximately 400 mbar. Currently amended
A substrate comprising: a patterned substrate having separated crystal growth facets with masked regions of the substrate's surface between the separated crystal growth facets; and a first region of I II -nitride material formed above the patterned substrate containing an impurity dopant that eliminates a crystal growth facet of the I II -nitride material that forms stacking faults when the I II -nitride material grows over the masked regions. Withdrawn
The substrate of claim 30, wherein the I II -nitride material comprises GaN or an alloy of GaN. Withdrawn
(Withdrawn-Previously presented) The substrate of claim 30, further comprising a second region of I II -nitride material not containing the impurity dopant formed above the first region. Withdrawn
(Withdrawn-Previously presented) The substrate of claim 30, wherein the impurity dopant is Ge. Withdrawn
(Withdrawn-Previously presented) The substrate of claim 30, wherein the masked regions comprise a conformal oxide coating formed over the patterned substrate. Withdrawn
Canceled
Canceled
Canceled
40-50. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
epitaxial III-nitride layer on patterned foreign substrate
Materials described outside the worked examples.
III-nitride material
impurity dopant
GaN or alloy of GaN
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 0 A is a transmission electron micrograph taken with a diffraction vector of <0002>;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dopant Density | 1000000000000000000–10000000000000000000 | Ge |
Pressure | 10–100 mTorr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,896,818Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 A is a transmission electron micrograph taken with a diffraction vector of <0002>;
FIGS. 2H is a scanning-electron micrograph showing, in plan view, gallium- polar semipolar GaN stripes formed on a portion of a patterned sapphire substrate, …
FIG. 3 is a scanning-electron micrograph showing a cross-section view of coalesced semipolar GaN formed on a patterned sapphire substrate, according to some …
FIG. 4A is a transmission-electron micrograph showing stacking faults in a coalesced epitaxial layer of GaN on a patterned sapphire substrate, according to …
FIG. 5 shows a cathodoluminescence image recorded from a coalesced epitaxial layer of semipolar GaN formed on a patterned sapphire substrate, according to some …
FIG. 6F is a scanning electron micrograph of a regrown, coalesced layer of GaN on a patterned sapphire substrate, according to some embodiments;
FIG. 7A illustrates that other orientations (e.g., nonpolar) of a I II -nitride material may be produced according to the present embodiments;
FIG. 8 is a scanning electron micrograph of gallium-polar semipolar GaN regrown on a patterned sapphire substrate where stacking faults associated with growth …
FIG. 9 shows a cathodoluminescence image recorded from a coalesced epitaxial layer of semipolar GaN fo rm ed on a patterned sapphire substrate with reduced …
FIG. 10 B is a transmission electron micrograph taken with a diffraction vector of <1010>; and
FIG. 11 is a scanning electron micrograph of gallium-polar semipolar GaN grown on a patterned sapphire substrate where stacking faults associated with growth …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-16. Canceled
Canceled
A method for forming an epitaxial layer of III -nitride material on a patterned foreign substrate, the method comprising: receiving the patterned foreign substrate having separated III-nitride crystals formed thereon; and further growing the III -nitride crystals to include an impurity dopant; and eliminating a crystal growth facet on the further grown III -nitride crystals that forms stacking faults. Original
The method of claim 17, wherein further growing the III -nitride crystals comprises growing GaN or an alloy of GaN. Original
The method of claim 17, wherein further growing the III -nitride crystals comprises using Ge as the impurity dopant. Previously presented
The method of claim 17, wherein the crystal growth facet that is eliminated is [[the]] a (0001) facet of GaN. Currently amended
The method of claim 17, further comprising: continuing the growth of the I II -nitride crystals until the separated I II -nitride crystals coalesce into a continuous layer across the patterned foreign substrate; and further growing the I II -nitride crystals without the impurity dopant. Currently amended
The method of claim [[17]] 18, wherein further growing the I II -nitride crystals comprises using Ge as the impurity dopant to dope the GaN or the alloy of GaN with a dopant density between approximately 1x10 18 cm⁻³ and approximately 1x10 19 cm⁻³. Currently amended
The method of claim [[17]] 18, wherein further growing the I II -nitride crystals comprises metal-organic chemical vapor deposition of the GaN or the alloy of GaN on the separated III-nitride crystals. Currently amended
The method of claim 22, wherein a flow rate of NH 3 gas during the deposition is between approximately 0.5 slm and approximately 5 slm. Original
The method of claim 22, wherein a flow rate of trimethylgallium or triethylgallium gas during the deposition is between approximately 10 i mol/min and approximately 200 i mol/min. Original
The method of claim 22, wherein a temperature during the deposition is between approximately 950 ° C and approximately 1070 °C. Currently amended
The method of claim 22, wherein a pressure during the deposition is between approximately 50 mbar and approximately 400 mbar. Currently amended
A substrate comprising: a patterned substrate having separated crystal growth facets with masked regions of the substrate's surface between the separated crystal growth facets; and a first region of I II -nitride material formed above the patterned substrate containing an impurity dopant that eliminates a crystal growth facet of the I II -nitride material that forms stacking faults when the I II -nitride material grows over the masked regions. Withdrawn
The substrate of claim 30, wherein the I II -nitride material comprises GaN or an alloy of GaN. Withdrawn
(Withdrawn-Previously presented) The substrate of claim 30, further comprising a second region of I II -nitride material not containing the impurity dopant formed above the first region. Withdrawn
(Withdrawn-Previously presented) The substrate of claim 30, wherein the impurity dopant is Ge. Withdrawn
(Withdrawn-Previously presented) The substrate of claim 30, wherein the masked regions comprise a conformal oxide coating formed over the patterned substrate. Withdrawn
Canceled
Canceled
Canceled
40-50. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
epitaxial III-nitride layer on patterned foreign substrate
Materials described outside the worked examples.
III-nitride material
impurity dopant
GaN or alloy of GaN
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 0 A is a transmission electron micrograph taken with a diffraction vector of <0002>;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dopant Density | 1000000000000000000–10000000000000000000 | Ge |
Pressure | 10–100 mTorr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,896,818Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 A is a transmission electron micrograph taken with a diffraction vector of <0002>;
FIGS. 2H is a scanning-electron micrograph showing, in plan view, gallium- polar semipolar GaN stripes formed on a portion of a patterned sapphire substrate, …
FIG. 3 is a scanning-electron micrograph showing a cross-section view of coalesced semipolar GaN formed on a patterned sapphire substrate, according to some …
FIG. 4A is a transmission-electron micrograph showing stacking faults in a coalesced epitaxial layer of GaN on a patterned sapphire substrate, according to …
FIG. 5 shows a cathodoluminescence image recorded from a coalesced epitaxial layer of semipolar GaN formed on a patterned sapphire substrate, according to some …
FIG. 6F is a scanning electron micrograph of a regrown, coalesced layer of GaN on a patterned sapphire substrate, according to some embodiments;
FIG. 7A illustrates that other orientations (e.g., nonpolar) of a I II -nitride material may be produced according to the present embodiments;
FIG. 8 is a scanning electron micrograph of gallium-polar semipolar GaN regrown on a patterned sapphire substrate where stacking faults associated with growth …
FIG. 9 shows a cathodoluminescence image recorded from a coalesced epitaxial layer of semipolar GaN fo rm ed on a patterned sapphire substrate with reduced …
FIG. 10 B is a transmission electron micrograph taken with a diffraction vector of <1010>; and
FIG. 11 is a scanning electron micrograph of gallium-polar semipolar GaN grown on a patterned sapphire substrate where stacking faults associated with growth …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-16. Canceled
Canceled
A method for forming an epitaxial layer of III -nitride material on a patterned foreign substrate, the method comprising: receiving the patterned foreign substrate having separated III-nitride crystals formed thereon; and further growing the III -nitride crystals to include an impurity dopant; and eliminating a crystal growth facet on the further grown III -nitride crystals that forms stacking faults. Original
The method of claim 17, wherein further growing the III -nitride crystals comprises growing GaN or an alloy of GaN. Original
The method of claim 17, wherein further growing the III -nitride crystals comprises using Ge as the impurity dopant. Previously presented
The method of claim 17, wherein the crystal growth facet that is eliminated is [[the]] a (0001) facet of GaN. Currently amended
The method of claim 17, further comprising: continuing the growth of the I II -nitride crystals until the separated I II -nitride crystals coalesce into a continuous layer across the patterned foreign substrate; and further growing the I II -nitride crystals without the impurity dopant. Currently amended
The method of claim [[17]] 18, wherein further growing the I II -nitride crystals comprises using Ge as the impurity dopant to dope the GaN or the alloy of GaN with a dopant density between approximately 1x10 18 cm⁻³ and approximately 1x10 19 cm⁻³. Currently amended
The method of claim [[17]] 18, wherein further growing the I II -nitride crystals comprises metal-organic chemical vapor deposition of the GaN or the alloy of GaN on the separated III-nitride crystals. Currently amended
The method of claim 22, wherein a flow rate of NH 3 gas during the deposition is between approximately 0.5 slm and approximately 5 slm. Original
The method of claim 22, wherein a flow rate of trimethylgallium or triethylgallium gas during the deposition is between approximately 10 i mol/min and approximately 200 i mol/min. Original
The method of claim 22, wherein a temperature during the deposition is between approximately 950 ° C and approximately 1070 °C. Currently amended
The method of claim 22, wherein a pressure during the deposition is between approximately 50 mbar and approximately 400 mbar. Currently amended
A substrate comprising: a patterned substrate having separated crystal growth facets with masked regions of the substrate's surface between the separated crystal growth facets; and a first region of I II -nitride material formed above the patterned substrate containing an impurity dopant that eliminates a crystal growth facet of the I II -nitride material that forms stacking faults when the I II -nitride material grows over the masked regions. Withdrawn
The substrate of claim 30, wherein the I II -nitride material comprises GaN or an alloy of GaN. Withdrawn
(Withdrawn-Previously presented) The substrate of claim 30, further comprising a second region of I II -nitride material not containing the impurity dopant formed above the first region. Withdrawn
(Withdrawn-Previously presented) The substrate of claim 30, wherein the impurity dopant is Ge. Withdrawn
(Withdrawn-Previously presented) The substrate of claim 30, wherein the masked regions comprise a conformal oxide coating formed over the patterned substrate. Withdrawn
Canceled
Canceled
Canceled
40-50. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
epitaxial III-nitride layer on patterned foreign substrate
Materials described outside the worked examples.
III-nitride material
impurity dopant
GaN or alloy of GaN
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 0 A is a transmission electron micrograph taken with a diffraction vector of <0002>;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dopant Density | 1000000000000000000–10000000000000000000 | Ge |
Pressure | 10–100 mTorr |
Related documents with shared materials, methods, properties, or citations.
Germanium dopant
Ge
ammonia
NH₃
trimethylgallium
Ga(CH₃)3
triethylgallium
Ga(C₂H₅)3
conformal oxide coating
sapphire substrate
Al₂O₃
KOH etchant
KOH
FIG. 6F is a scanning electron micrograph of a regrown, coalesced layer of GaN on a patterned sapphire substrate, according to some embodiments;
FIG. 8 is a scanning electron micrograph of gallium-polar semipolar GaN regrown on a patterned sapphire substrate where stacking faults associated with growth …
FIG. 10 B is a transmission electron micrograph taken with a diffraction vector of <1010>; and
FIG. 11 is a scanning electron micrograph of gallium-polar semipolar GaN grown on a patterned sapphire substrate where stacking faults associated with growth …
| — |
Thickness | 10–50 nm | — |
Duration | 1–10 minutes | — |
Duration | 0.5–5 minutes | — |
Thickness | 20–100 nm | — |
Duration | 0.5–3 minutes | — |
Thickness | 100–20000 nm | — |
Duration | 1–60 minutes | — |
Thickness | 2–20 µm | — |
Thickness | 20–500 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 nm | — |
Temperature | 950–1070 °C | — |
Germanium dopant
Ge
ammonia
NH₃
trimethylgallium
Ga(CH₃)3
triethylgallium
Ga(C₂H₅)3
conformal oxide coating
sapphire substrate
Al₂O₃
KOH etchant
KOH
FIG. 6F is a scanning electron micrograph of a regrown, coalesced layer of GaN on a patterned sapphire substrate, according to some embodiments;
FIG. 8 is a scanning electron micrograph of gallium-polar semipolar GaN regrown on a patterned sapphire substrate where stacking faults associated with growth …
FIG. 10 B is a transmission electron micrograph taken with a diffraction vector of <1010>; and
FIG. 11 is a scanning electron micrograph of gallium-polar semipolar GaN grown on a patterned sapphire substrate where stacking faults associated with growth …
| — |
Thickness | 10–50 nm | — |
Duration | 1–10 minutes | — |
Duration | 0.5–5 minutes | — |
Thickness | 20–100 nm | — |
Duration | 0.5–3 minutes | — |
Thickness | 100–20000 nm | — |
Duration | 1–60 minutes | — |
Thickness | 2–20 µm | — |
Thickness | 20–500 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 nm | — |
Temperature | 950–1070 °C | — |
Germanium dopant
Ge
ammonia
NH₃
trimethylgallium
Ga(CH₃)3
triethylgallium
Ga(C₂H₅)3
conformal oxide coating
sapphire substrate
Al₂O₃
KOH etchant
KOH
FIG. 6F is a scanning electron micrograph of a regrown, coalesced layer of GaN on a patterned sapphire substrate, according to some embodiments;
FIG. 8 is a scanning electron micrograph of gallium-polar semipolar GaN regrown on a patterned sapphire substrate where stacking faults associated with growth …
FIG. 10 B is a transmission electron micrograph taken with a diffraction vector of <1010>; and
FIG. 11 is a scanning electron micrograph of gallium-polar semipolar GaN grown on a patterned sapphire substrate where stacking faults associated with growth …
| — |
Thickness | 10–50 nm | — |
Duration | 1–10 minutes | — |
Duration | 0.5–5 minutes | — |
Thickness | 20–100 nm | — |
Duration | 0.5–3 minutes | — |
Thickness | 100–20000 nm | — |
Duration | 1–60 minutes | — |
Thickness | 2–20 µm | — |
Thickness | 20–500 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 nm | — |
Temperature | 950–1070 °C | — |
Germanium dopant
Ge
ammonia
NH₃
trimethylgallium
Ga(CH₃)3
triethylgallium
Ga(C₂H₅)3
conformal oxide coating
sapphire substrate
Al₂O₃
KOH etchant
KOH
FIG. 6F is a scanning electron micrograph of a regrown, coalesced layer of GaN on a patterned sapphire substrate, according to some embodiments;
FIG. 8 is a scanning electron micrograph of gallium-polar semipolar GaN regrown on a patterned sapphire substrate where stacking faults associated with growth …
FIG. 10 B is a transmission electron micrograph taken with a diffraction vector of <1010>; and
FIG. 11 is a scanning electron micrograph of gallium-polar semipolar GaN grown on a patterned sapphire substrate where stacking faults associated with growth …
| — |
Thickness | 10–50 nm | — |
Duration | 1–10 minutes | — |
Duration | 0.5–5 minutes | — |
Thickness | 20–100 nm | — |
Duration | 0.5–3 minutes | — |
Thickness | 100–20000 nm | — |
Duration | 1–60 minutes | — |
Thickness | 2–20 µm | — |
Thickness | 20–500 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 nm | — |
Temperature | 950–1070 °C | — |