Patent
US 11,127,878A METHOD OF DEPOSITING GALLIUM NITRIDE ON A SUBSTRATE
Ahmad Shuhaimi Bin Abu Bakar
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,127,878Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows cross-sectional scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Figure 2 shows a topography scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Figure 3 is (a) (002) and (b) (102) phase analysis for 90 minutes deposited gallium nitride on a cone shaped patterned sapphire substrate.
Figure 4 shows (a) a cross-sectional scanning electron microscope images of low temperature buffer layer (LTBL)-gallium nitride (GaN) and high temperature GaN, and (b) growth mechanism of GaN island on a patterned sapphire substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of depositing a coating layer comprising gallium nitride on a cone-shaped patterned sapphire substrate, comprising the steps of: (a) providing the cone-shaped patterned sapphire substrate having a plurality of side walls and valleys; (b) forming a first layer of gallium nitride deposited on the cone-shaped patterned sapphire substrate, by reacting gaseous trimethylgallium and ammonia at a temperature ranging from 400 to 500 ° C, such that the first layer is formed on the side walls and the valleys; and (c) forming a second layer of gallium nitride deposited on top of the first layer, by reacting gaseous trimethylgallium and ammonia at a temperature ranging from 1000 to 1200 °C, to obtain the coating layer comprising the first layer of gallium nitride and the second layer of gallium nitride at a thickness ranging from 3.0 to 4.5 m. Currently amended
: The method according to claim 1, wherein the first layer of gallium nitride and the second layer of gallium nitride coalesces to form the coating layer. Original
: The method according to claim 1, wherein steps (b) and (c) are conducted using a metalorganic chemical vapor deposition technique. Currently amended
: The method according to claim 1, wherein step (b) is conducted over a time range of 3 to 150 minutes. Original
: The method according to claim 1, wherein a surface roughness of the coating layer ranges from 0.15 to 0.25 nm. Original
Canceled
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials2 process steps
GaN is deposited on a cone-shaped patterned sapphire substrate by MOCVD. The substrate is preheated at 1125 °C under hydrogen flow. A low-temperature buffer first layer of GaN (20–50 nm thick) is grown by reacting TMGa and NH₃ at 425 °C for up to 150 min. A second high-temperature GaN layer is then grown at 1100 °C for 90 min. The two layers coalesce to form a mirror-like, crack-free c-plane (0002) coating layer with total thickness 3.0–4.5 µm and surface roughness 0.15–0.25 nm.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-cone-shaped-patterned-sapphire substrate coating
Materials described outside the worked examples.
cone-shaped patterned sapphire substrate
Al₂O₃
hydrogen gas
H₂
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 shows cross-sectional scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
surface roughness of coating layer (coalesced GaN on cone-shaped PSS) | 0.15–0.25 nm | GaN |
total GaN coating layer thickness (first + second layers) | 3–4.5 µm |
Related documents with shared materials, methods, properties, or citations.
STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
Patent
Atlas literature
Patent
US 11,127,878Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows cross-sectional scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Figure 2 shows a topography scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Figure 3 is (a) (002) and (b) (102) phase analysis for 90 minutes deposited gallium nitride on a cone shaped patterned sapphire substrate.
Figure 4 shows (a) a cross-sectional scanning electron microscope images of low temperature buffer layer (LTBL)-gallium nitride (GaN) and high temperature GaN, and (b) growth mechanism of GaN island on a patterned sapphire substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of depositing a coating layer comprising gallium nitride on a cone-shaped patterned sapphire substrate, comprising the steps of: (a) providing the cone-shaped patterned sapphire substrate having a plurality of side walls and valleys; (b) forming a first layer of gallium nitride deposited on the cone-shaped patterned sapphire substrate, by reacting gaseous trimethylgallium and ammonia at a temperature ranging from 400 to 500 ° C, such that the first layer is formed on the side walls and the valleys; and (c) forming a second layer of gallium nitride deposited on top of the first layer, by reacting gaseous trimethylgallium and ammonia at a temperature ranging from 1000 to 1200 °C, to obtain the coating layer comprising the first layer of gallium nitride and the second layer of gallium nitride at a thickness ranging from 3.0 to 4.5 m. Currently amended
: The method according to claim 1, wherein the first layer of gallium nitride and the second layer of gallium nitride coalesces to form the coating layer. Original
: The method according to claim 1, wherein steps (b) and (c) are conducted using a metalorganic chemical vapor deposition technique. Currently amended
: The method according to claim 1, wherein step (b) is conducted over a time range of 3 to 150 minutes. Original
: The method according to claim 1, wherein a surface roughness of the coating layer ranges from 0.15 to 0.25 nm. Original
Canceled
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials2 process steps
GaN is deposited on a cone-shaped patterned sapphire substrate by MOCVD. The substrate is preheated at 1125 °C under hydrogen flow. A low-temperature buffer first layer of GaN (20–50 nm thick) is grown by reacting TMGa and NH₃ at 425 °C for up to 150 min. A second high-temperature GaN layer is then grown at 1100 °C for 90 min. The two layers coalesce to form a mirror-like, crack-free c-plane (0002) coating layer with total thickness 3.0–4.5 µm and surface roughness 0.15–0.25 nm.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-cone-shaped-patterned-sapphire substrate coating
Materials described outside the worked examples.
cone-shaped patterned sapphire substrate
Al₂O₃
hydrogen gas
H₂
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 shows cross-sectional scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
surface roughness of coating layer (coalesced GaN on cone-shaped PSS) | 0.15–0.25 nm | GaN |
total GaN coating layer thickness (first + second layers) | 3–4.5 µm |
Related documents with shared materials, methods, properties, or citations.
STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
Patent
Atlas literature
Patent
US 11,127,878Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows cross-sectional scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Figure 2 shows a topography scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Figure 3 is (a) (002) and (b) (102) phase analysis for 90 minutes deposited gallium nitride on a cone shaped patterned sapphire substrate.
Figure 4 shows (a) a cross-sectional scanning electron microscope images of low temperature buffer layer (LTBL)-gallium nitride (GaN) and high temperature GaN, and (b) growth mechanism of GaN island on a patterned sapphire substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of depositing a coating layer comprising gallium nitride on a cone-shaped patterned sapphire substrate, comprising the steps of: (a) providing the cone-shaped patterned sapphire substrate having a plurality of side walls and valleys; (b) forming a first layer of gallium nitride deposited on the cone-shaped patterned sapphire substrate, by reacting gaseous trimethylgallium and ammonia at a temperature ranging from 400 to 500 ° C, such that the first layer is formed on the side walls and the valleys; and (c) forming a second layer of gallium nitride deposited on top of the first layer, by reacting gaseous trimethylgallium and ammonia at a temperature ranging from 1000 to 1200 °C, to obtain the coating layer comprising the first layer of gallium nitride and the second layer of gallium nitride at a thickness ranging from 3.0 to 4.5 m. Currently amended
: The method according to claim 1, wherein the first layer of gallium nitride and the second layer of gallium nitride coalesces to form the coating layer. Original
: The method according to claim 1, wherein steps (b) and (c) are conducted using a metalorganic chemical vapor deposition technique. Currently amended
: The method according to claim 1, wherein step (b) is conducted over a time range of 3 to 150 minutes. Original
: The method according to claim 1, wherein a surface roughness of the coating layer ranges from 0.15 to 0.25 nm. Original
Canceled
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials2 process steps
GaN is deposited on a cone-shaped patterned sapphire substrate by MOCVD. The substrate is preheated at 1125 °C under hydrogen flow. A low-temperature buffer first layer of GaN (20–50 nm thick) is grown by reacting TMGa and NH₃ at 425 °C for up to 150 min. A second high-temperature GaN layer is then grown at 1100 °C for 90 min. The two layers coalesce to form a mirror-like, crack-free c-plane (0002) coating layer with total thickness 3.0–4.5 µm and surface roughness 0.15–0.25 nm.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-cone-shaped-patterned-sapphire substrate coating
Materials described outside the worked examples.
cone-shaped patterned sapphire substrate
Al₂O₃
hydrogen gas
H₂
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 shows cross-sectional scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
surface roughness of coating layer (coalesced GaN on cone-shaped PSS) | 0.15–0.25 nm | GaN |
total GaN coating layer thickness (first + second layers) | 3–4.5 µm |
Related documents with shared materials, methods, properties, or citations.
STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
Patent
Atlas literature
Patent
US 11,127,878Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows cross-sectional scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Figure 2 shows a topography scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Figure 3 is (a) (002) and (b) (102) phase analysis for 90 minutes deposited gallium nitride on a cone shaped patterned sapphire substrate.
Figure 4 shows (a) a cross-sectional scanning electron microscope images of low temperature buffer layer (LTBL)-gallium nitride (GaN) and high temperature GaN, and (b) growth mechanism of GaN island on a patterned sapphire substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of depositing a coating layer comprising gallium nitride on a cone-shaped patterned sapphire substrate, comprising the steps of: (a) providing the cone-shaped patterned sapphire substrate having a plurality of side walls and valleys; (b) forming a first layer of gallium nitride deposited on the cone-shaped patterned sapphire substrate, by reacting gaseous trimethylgallium and ammonia at a temperature ranging from 400 to 500 ° C, such that the first layer is formed on the side walls and the valleys; and (c) forming a second layer of gallium nitride deposited on top of the first layer, by reacting gaseous trimethylgallium and ammonia at a temperature ranging from 1000 to 1200 °C, to obtain the coating layer comprising the first layer of gallium nitride and the second layer of gallium nitride at a thickness ranging from 3.0 to 4.5 m. Currently amended
: The method according to claim 1, wherein the first layer of gallium nitride and the second layer of gallium nitride coalesces to form the coating layer. Original
: The method according to claim 1, wherein steps (b) and (c) are conducted using a metalorganic chemical vapor deposition technique. Currently amended
: The method according to claim 1, wherein step (b) is conducted over a time range of 3 to 150 minutes. Original
: The method according to claim 1, wherein a surface roughness of the coating layer ranges from 0.15 to 0.25 nm. Original
Canceled
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials2 process steps
GaN is deposited on a cone-shaped patterned sapphire substrate by MOCVD. The substrate is preheated at 1125 °C under hydrogen flow. A low-temperature buffer first layer of GaN (20–50 nm thick) is grown by reacting TMGa and NH₃ at 425 °C for up to 150 min. A second high-temperature GaN layer is then grown at 1100 °C for 90 min. The two layers coalesce to form a mirror-like, crack-free c-plane (0002) coating layer with total thickness 3.0–4.5 µm and surface roughness 0.15–0.25 nm.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-cone-shaped-patterned-sapphire substrate coating
Materials described outside the worked examples.
cone-shaped patterned sapphire substrate
Al₂O₃
hydrogen gas
H₂
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 shows cross-sectional scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
surface roughness of coating layer (coalesced GaN on cone-shaped PSS) | 0.15–0.25 nm | GaN |
total GaN coating layer thickness (first + second layers) | 3–4.5 µm |
Related documents with shared materials, methods, properties, or citations.
STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
Figure 2 shows a topography scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Figure 4 shows (a) a cross-sectional scanning electron microscope images of low temperature buffer layer (LTBL)-gallium nitride (GaN) and high temperature GaN, and (b) growth mechanism of GaN island on a patterned sapphire substrate.
first layer (low-temperature buffer) GaN thickness | 20–50 nm | GaN |
Thickness | 10–50 nm | — |
Temperature | 400–500 °C | — |
Temperature | 1000–1200 °C | — |
Duration | 3–150 minutes | — |
Duration | 3–90 minutes | — |
Figure 2 shows a topography scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Figure 4 shows (a) a cross-sectional scanning electron microscope images of low temperature buffer layer (LTBL)-gallium nitride (GaN) and high temperature GaN, and (b) growth mechanism of GaN island on a patterned sapphire substrate.
first layer (low-temperature buffer) GaN thickness | 20–50 nm | GaN |
Thickness | 10–50 nm | — |
Temperature | 400–500 °C | — |
Temperature | 1000–1200 °C | — |
Duration | 3–150 minutes | — |
Duration | 3–90 minutes | — |
Figure 2 shows a topography scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Figure 4 shows (a) a cross-sectional scanning electron microscope images of low temperature buffer layer (LTBL)-gallium nitride (GaN) and high temperature GaN, and (b) growth mechanism of GaN island on a patterned sapphire substrate.
first layer (low-temperature buffer) GaN thickness | 20–50 nm | GaN |
Thickness | 10–50 nm | — |
Temperature | 400–500 °C | — |
Temperature | 1000–1200 °C | — |
Duration | 3–150 minutes | — |
Duration | 3–90 minutes | — |
Figure 2 shows a topography scanning electron micrograph images of deposition of gallium nitride layer on a cone-shaped patterned sapphire substrate at various deposition durations, at (a) 3.2 minutes, (b) 16 minutes, (c) 32 minutes, and (d) 90 minutes.
Figure 4 shows (a) a cross-sectional scanning electron microscope images of low temperature buffer layer (LTBL)-gallium nitride (GaN) and high temperature GaN, and (b) growth mechanism of GaN island on a patterned sapphire substrate.
first layer (low-temperature buffer) GaN thickness | 20–50 nm | GaN |
Thickness | 10–50 nm | — |
Temperature | 400–500 °C | — |
Temperature | 1000–1200 °C | — |
Duration | 3–150 minutes | — |
Duration | 3–90 minutes | — |