Patent
Atlas literature
Patent
US 12,155,005 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram of a growth substrate including a nitride-based LED device, according to some aspects of the present disclosure.
FIGS. 2A and 2B are illustrations of a growth substrate subdivided into delimited areas, according to some aspects of the present disclosure.
FIG. 3 is a scanning electron microscope (SEM) image of a mechanical release layer grown on a growth substrate, according to some aspects of the present …
FIG. 4A is a SEM image of nitride-based LED devices, according to some aspects of the present disclosure.
FIGS. 5A and 5B are optical microscope images of nitride-based LED devices, according to some aspects of the present disclosure.
FIG. 6 is a graphical representation of current and voltage of a nitride-based LED device, according to some aspects of the present disclosure.
FIGS. 7A-7C are images of selectively releasing and transferring nitride-based LED devices from a growth sub- strate, according to some aspects of the present …
FIG. 8B is a microscope image of a nitride-based LED device transferred to a receiving substrate, according to some aspects of the present disclosure.
FIG. 9 is a graphical representation of current and voltage of a nitride-based LED device before transfer to a receiving substrate and after transfer to a …
FIG. 10 is a flow diagram outlining the method of growing and releasing nitride-based LED devices, according to some aspects of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: growing a set of nitride-based devices on a growth substrate pre-patterned into delimited areas physically separated one from another, each physically separated delimited area having a 2D hexagonal boron nitride (2D h-BN) release layer on an exposed growth surface of the growth substrate; selecting a nitride-based device from the set of nitride-based devices; and releasing the selected nitride-based device; wherein the 2D h-BN release layer of each of the physi-cally separated delimited areas is configured to achieve localized van der Waals epitaxy of one of the nitride-based devices of the set of nitride-based devices.
The method of claim 1 further comprising: subdividing the growth substrate into the physically sepa-rated delimited areas; and growing the 2D h-BN release layer on the growth substrate; wherein growing the set of nitride-based devices com-prises growing an individual nitride-based device of the set of nitride-based devices in a respective individual delimited area of the physically separated delimited areas; wherein selecting comprises individually selecting an individual nitride-based device; wherein releasing comprises individually releasing one or more of the selected nitride-based devices; and wherein individually releasing the selected nitride-based devices is via a dicing and cutting free mechanism.
A method comprising: pre-patterning a sapphire substrate into delimited areas physically separated one from another, each physically separated delimited area having an exposed growth surface of the sapphire substrate; growing a set of gallium nitride-based devices, one each in a respective one of the physically separated delim-ited areas, each physically separated delimited area comprising a laterally grown 2D hexagonal boron nitride (2D h-BN) release layer on the exposed growth surface of the sapphire substrate; and releasing, individually, one or more of the gallium nitride-based devices via localized van der Waals epitaxy; wherein lateral control of quality of the 2D h-BN release layer achieves the localized van der Waals epitaxy.
The method of claim 9 further comprising: transferring the released gallium nitride-based device to a receiving substrate.
A method comprising: growing a mechanical release layer directly on a growth surface of a growth substrate subdivided into delimited areas physically separated one from another; growing a set of nitride-based LED devices, one each on the mechanical release layer of one of the physically separated delimited areas; individually selecting a nitride-based LED device from the set of nitride-based LED devices; releasing the selected nitride-based LED device from the growth substrate via a dicing and cutting free mecha-nism directly resultant from the arrangement of the physically separated delimited areas; and B₂ transferring the selected nitride-based LED device to a receiving substrate; wherein releasing the selected nitride-based LED device comprises: positioning a liquid dissolvable tape on a support of a device capable of moving linearly with respect to a vertical axis; lowering the support such that the liquid dissolvable tape contacts the selected nitride-based LED device; affixing the selected nitride-based LED device to the liquid dissolvable tape; and removing the selected nitride-based LED device from the growth substrate by vertically lifting the support.
The method of claim 21, wherein the liquid dissolv-able tape is water dissolvable.
The method of claim 21, wherein the liquid dissolv-able tape dissolves in water within approximately one min-ute.
The method of claim 21 further comprising dissolving the liquid dissolvable tape from the nitride-based LED device after the selected nitride-based LED device is transferred to the receiving substrate.
A method comprising: growing a hexagonal boron nitride (h-BN) mechanical release layer on a growth substrate subdivided into delimited areas, each physically separated delimited area having an exposed growth surface of the growth substrate, the physically separated delimited areas separated one from another via a grid comprising dielectric material on the growth surface of the growth substrate, and the physically separated delimited areas forming discrete areas for nitride-based device growth; growing one or more nitride-based devices, each one of the one or more nitride-based devices grown in a respective one of the discrete areas for nitride-based device growth; selecting a nitride-based device from the one or more nitride-based devices; and releasing the selected nitride-based device via a dicing and cutting free mechanism; wherein: portions of the mechanical release layer directly grown on the growth surface in the discrete areas for nitride-based device growth are of a controlled qual-ity of laterally grown h-BN layers stacked together via van der Waals interactions, the control of the quality of the h-BN layers providing for localized van der Waals epitaxy of a single grown nitride-based device in a single discrete area for nitride-based device growth; portions of the mechanical release layer directly grown on the grid are of a reduced quality from those portions of the mechanical release layer forming the discrete areas for nitride-based device growth; and the releasing is dicing and cutting free as a direct result from: the reduced quality portions of the mechanical release layer directly grown on the grid; and the physical separation of each of the discrete areas for nitride-based device growth from one another. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
nitride-based LED (GaN-based LED on 2D h-BN/sapphire)
Materials described outside the worked examples.
2D hexagonal boron nitride
h-BN
nitride-based (gallium nitride-based) device material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a scanning electron microscope (SEM) image of a mechanical release layer grown on a growth substrate, according to some aspects of the present …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
blue light emission wavelength (claimed range) | 400–450 nm | — |
Thickness | 100–500 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,155,005 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram of a growth substrate including a nitride-based LED device, according to some aspects of the present disclosure.
FIGS. 2A and 2B are illustrations of a growth substrate subdivided into delimited areas, according to some aspects of the present disclosure.
FIG. 3 is a scanning electron microscope (SEM) image of a mechanical release layer grown on a growth substrate, according to some aspects of the present …
FIG. 4A is a SEM image of nitride-based LED devices, according to some aspects of the present disclosure.
FIGS. 5A and 5B are optical microscope images of nitride-based LED devices, according to some aspects of the present disclosure.
FIG. 6 is a graphical representation of current and voltage of a nitride-based LED device, according to some aspects of the present disclosure.
FIGS. 7A-7C are images of selectively releasing and transferring nitride-based LED devices from a growth sub- strate, according to some aspects of the present …
FIG. 8B is a microscope image of a nitride-based LED device transferred to a receiving substrate, according to some aspects of the present disclosure.
FIG. 9 is a graphical representation of current and voltage of a nitride-based LED device before transfer to a receiving substrate and after transfer to a …
FIG. 10 is a flow diagram outlining the method of growing and releasing nitride-based LED devices, according to some aspects of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: growing a set of nitride-based devices on a growth substrate pre-patterned into delimited areas physically separated one from another, each physically separated delimited area having a 2D hexagonal boron nitride (2D h-BN) release layer on an exposed growth surface of the growth substrate; selecting a nitride-based device from the set of nitride-based devices; and releasing the selected nitride-based device; wherein the 2D h-BN release layer of each of the physi-cally separated delimited areas is configured to achieve localized van der Waals epitaxy of one of the nitride-based devices of the set of nitride-based devices.
The method of claim 1 further comprising: subdividing the growth substrate into the physically sepa-rated delimited areas; and growing the 2D h-BN release layer on the growth substrate; wherein growing the set of nitride-based devices com-prises growing an individual nitride-based device of the set of nitride-based devices in a respective individual delimited area of the physically separated delimited areas; wherein selecting comprises individually selecting an individual nitride-based device; wherein releasing comprises individually releasing one or more of the selected nitride-based devices; and wherein individually releasing the selected nitride-based devices is via a dicing and cutting free mechanism.
A method comprising: pre-patterning a sapphire substrate into delimited areas physically separated one from another, each physically separated delimited area having an exposed growth surface of the sapphire substrate; growing a set of gallium nitride-based devices, one each in a respective one of the physically separated delim-ited areas, each physically separated delimited area comprising a laterally grown 2D hexagonal boron nitride (2D h-BN) release layer on the exposed growth surface of the sapphire substrate; and releasing, individually, one or more of the gallium nitride-based devices via localized van der Waals epitaxy; wherein lateral control of quality of the 2D h-BN release layer achieves the localized van der Waals epitaxy.
The method of claim 9 further comprising: transferring the released gallium nitride-based device to a receiving substrate.
A method comprising: growing a mechanical release layer directly on a growth surface of a growth substrate subdivided into delimited areas physically separated one from another; growing a set of nitride-based LED devices, one each on the mechanical release layer of one of the physically separated delimited areas; individually selecting a nitride-based LED device from the set of nitride-based LED devices; releasing the selected nitride-based LED device from the growth substrate via a dicing and cutting free mecha-nism directly resultant from the arrangement of the physically separated delimited areas; and B₂ transferring the selected nitride-based LED device to a receiving substrate; wherein releasing the selected nitride-based LED device comprises: positioning a liquid dissolvable tape on a support of a device capable of moving linearly with respect to a vertical axis; lowering the support such that the liquid dissolvable tape contacts the selected nitride-based LED device; affixing the selected nitride-based LED device to the liquid dissolvable tape; and removing the selected nitride-based LED device from the growth substrate by vertically lifting the support.
The method of claim 21, wherein the liquid dissolv-able tape is water dissolvable.
The method of claim 21, wherein the liquid dissolv-able tape dissolves in water within approximately one min-ute.
The method of claim 21 further comprising dissolving the liquid dissolvable tape from the nitride-based LED device after the selected nitride-based LED device is transferred to the receiving substrate.
A method comprising: growing a hexagonal boron nitride (h-BN) mechanical release layer on a growth substrate subdivided into delimited areas, each physically separated delimited area having an exposed growth surface of the growth substrate, the physically separated delimited areas separated one from another via a grid comprising dielectric material on the growth surface of the growth substrate, and the physically separated delimited areas forming discrete areas for nitride-based device growth; growing one or more nitride-based devices, each one of the one or more nitride-based devices grown in a respective one of the discrete areas for nitride-based device growth; selecting a nitride-based device from the one or more nitride-based devices; and releasing the selected nitride-based device via a dicing and cutting free mechanism; wherein: portions of the mechanical release layer directly grown on the growth surface in the discrete areas for nitride-based device growth are of a controlled qual-ity of laterally grown h-BN layers stacked together via van der Waals interactions, the control of the quality of the h-BN layers providing for localized van der Waals epitaxy of a single grown nitride-based device in a single discrete area for nitride-based device growth; portions of the mechanical release layer directly grown on the grid are of a reduced quality from those portions of the mechanical release layer forming the discrete areas for nitride-based device growth; and the releasing is dicing and cutting free as a direct result from: the reduced quality portions of the mechanical release layer directly grown on the grid; and the physical separation of each of the discrete areas for nitride-based device growth from one another. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
nitride-based LED (GaN-based LED on 2D h-BN/sapphire)
Materials described outside the worked examples.
2D hexagonal boron nitride
h-BN
nitride-based (gallium nitride-based) device material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a scanning electron microscope (SEM) image of a mechanical release layer grown on a growth substrate, according to some aspects of the present …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
blue light emission wavelength (claimed range) | 400–450 nm | — |
Thickness | 100–500 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,155,005 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram of a growth substrate including a nitride-based LED device, according to some aspects of the present disclosure.
FIGS. 2A and 2B are illustrations of a growth substrate subdivided into delimited areas, according to some aspects of the present disclosure.
FIG. 3 is a scanning electron microscope (SEM) image of a mechanical release layer grown on a growth substrate, according to some aspects of the present …
FIG. 4A is a SEM image of nitride-based LED devices, according to some aspects of the present disclosure.
FIGS. 5A and 5B are optical microscope images of nitride-based LED devices, according to some aspects of the present disclosure.
FIG. 6 is a graphical representation of current and voltage of a nitride-based LED device, according to some aspects of the present disclosure.
FIGS. 7A-7C are images of selectively releasing and transferring nitride-based LED devices from a growth sub- strate, according to some aspects of the present …
FIG. 8B is a microscope image of a nitride-based LED device transferred to a receiving substrate, according to some aspects of the present disclosure.
FIG. 9 is a graphical representation of current and voltage of a nitride-based LED device before transfer to a receiving substrate and after transfer to a …
FIG. 10 is a flow diagram outlining the method of growing and releasing nitride-based LED devices, according to some aspects of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: growing a set of nitride-based devices on a growth substrate pre-patterned into delimited areas physically separated one from another, each physically separated delimited area having a 2D hexagonal boron nitride (2D h-BN) release layer on an exposed growth surface of the growth substrate; selecting a nitride-based device from the set of nitride-based devices; and releasing the selected nitride-based device; wherein the 2D h-BN release layer of each of the physi-cally separated delimited areas is configured to achieve localized van der Waals epitaxy of one of the nitride-based devices of the set of nitride-based devices.
The method of claim 1 further comprising: subdividing the growth substrate into the physically sepa-rated delimited areas; and growing the 2D h-BN release layer on the growth substrate; wherein growing the set of nitride-based devices com-prises growing an individual nitride-based device of the set of nitride-based devices in a respective individual delimited area of the physically separated delimited areas; wherein selecting comprises individually selecting an individual nitride-based device; wherein releasing comprises individually releasing one or more of the selected nitride-based devices; and wherein individually releasing the selected nitride-based devices is via a dicing and cutting free mechanism.
A method comprising: pre-patterning a sapphire substrate into delimited areas physically separated one from another, each physically separated delimited area having an exposed growth surface of the sapphire substrate; growing a set of gallium nitride-based devices, one each in a respective one of the physically separated delim-ited areas, each physically separated delimited area comprising a laterally grown 2D hexagonal boron nitride (2D h-BN) release layer on the exposed growth surface of the sapphire substrate; and releasing, individually, one or more of the gallium nitride-based devices via localized van der Waals epitaxy; wherein lateral control of quality of the 2D h-BN release layer achieves the localized van der Waals epitaxy.
The method of claim 9 further comprising: transferring the released gallium nitride-based device to a receiving substrate.
A method comprising: growing a mechanical release layer directly on a growth surface of a growth substrate subdivided into delimited areas physically separated one from another; growing a set of nitride-based LED devices, one each on the mechanical release layer of one of the physically separated delimited areas; individually selecting a nitride-based LED device from the set of nitride-based LED devices; releasing the selected nitride-based LED device from the growth substrate via a dicing and cutting free mecha-nism directly resultant from the arrangement of the physically separated delimited areas; and B₂ transferring the selected nitride-based LED device to a receiving substrate; wherein releasing the selected nitride-based LED device comprises: positioning a liquid dissolvable tape on a support of a device capable of moving linearly with respect to a vertical axis; lowering the support such that the liquid dissolvable tape contacts the selected nitride-based LED device; affixing the selected nitride-based LED device to the liquid dissolvable tape; and removing the selected nitride-based LED device from the growth substrate by vertically lifting the support.
The method of claim 21, wherein the liquid dissolv-able tape is water dissolvable.
The method of claim 21, wherein the liquid dissolv-able tape dissolves in water within approximately one min-ute.
The method of claim 21 further comprising dissolving the liquid dissolvable tape from the nitride-based LED device after the selected nitride-based LED device is transferred to the receiving substrate.
A method comprising: growing a hexagonal boron nitride (h-BN) mechanical release layer on a growth substrate subdivided into delimited areas, each physically separated delimited area having an exposed growth surface of the growth substrate, the physically separated delimited areas separated one from another via a grid comprising dielectric material on the growth surface of the growth substrate, and the physically separated delimited areas forming discrete areas for nitride-based device growth; growing one or more nitride-based devices, each one of the one or more nitride-based devices grown in a respective one of the discrete areas for nitride-based device growth; selecting a nitride-based device from the one or more nitride-based devices; and releasing the selected nitride-based device via a dicing and cutting free mechanism; wherein: portions of the mechanical release layer directly grown on the growth surface in the discrete areas for nitride-based device growth are of a controlled qual-ity of laterally grown h-BN layers stacked together via van der Waals interactions, the control of the quality of the h-BN layers providing for localized van der Waals epitaxy of a single grown nitride-based device in a single discrete area for nitride-based device growth; portions of the mechanical release layer directly grown on the grid are of a reduced quality from those portions of the mechanical release layer forming the discrete areas for nitride-based device growth; and the releasing is dicing and cutting free as a direct result from: the reduced quality portions of the mechanical release layer directly grown on the grid; and the physical separation of each of the discrete areas for nitride-based device growth from one another. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
nitride-based LED (GaN-based LED on 2D h-BN/sapphire)
Materials described outside the worked examples.
2D hexagonal boron nitride
h-BN
nitride-based (gallium nitride-based) device material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a scanning electron microscope (SEM) image of a mechanical release layer grown on a growth substrate, according to some aspects of the present …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
blue light emission wavelength (claimed range) | 400–450 nm | — |
Thickness | 100–500 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,155,005 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram of a growth substrate including a nitride-based LED device, according to some aspects of the present disclosure.
FIGS. 2A and 2B are illustrations of a growth substrate subdivided into delimited areas, according to some aspects of the present disclosure.
FIG. 3 is a scanning electron microscope (SEM) image of a mechanical release layer grown on a growth substrate, according to some aspects of the present …
FIG. 4A is a SEM image of nitride-based LED devices, according to some aspects of the present disclosure.
FIGS. 5A and 5B are optical microscope images of nitride-based LED devices, according to some aspects of the present disclosure.
FIG. 6 is a graphical representation of current and voltage of a nitride-based LED device, according to some aspects of the present disclosure.
FIGS. 7A-7C are images of selectively releasing and transferring nitride-based LED devices from a growth sub- strate, according to some aspects of the present …
FIG. 8B is a microscope image of a nitride-based LED device transferred to a receiving substrate, according to some aspects of the present disclosure.
FIG. 9 is a graphical representation of current and voltage of a nitride-based LED device before transfer to a receiving substrate and after transfer to a …
FIG. 10 is a flow diagram outlining the method of growing and releasing nitride-based LED devices, according to some aspects of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: growing a set of nitride-based devices on a growth substrate pre-patterned into delimited areas physically separated one from another, each physically separated delimited area having a 2D hexagonal boron nitride (2D h-BN) release layer on an exposed growth surface of the growth substrate; selecting a nitride-based device from the set of nitride-based devices; and releasing the selected nitride-based device; wherein the 2D h-BN release layer of each of the physi-cally separated delimited areas is configured to achieve localized van der Waals epitaxy of one of the nitride-based devices of the set of nitride-based devices.
The method of claim 1 further comprising: subdividing the growth substrate into the physically sepa-rated delimited areas; and growing the 2D h-BN release layer on the growth substrate; wherein growing the set of nitride-based devices com-prises growing an individual nitride-based device of the set of nitride-based devices in a respective individual delimited area of the physically separated delimited areas; wherein selecting comprises individually selecting an individual nitride-based device; wherein releasing comprises individually releasing one or more of the selected nitride-based devices; and wherein individually releasing the selected nitride-based devices is via a dicing and cutting free mechanism.
A method comprising: pre-patterning a sapphire substrate into delimited areas physically separated one from another, each physically separated delimited area having an exposed growth surface of the sapphire substrate; growing a set of gallium nitride-based devices, one each in a respective one of the physically separated delim-ited areas, each physically separated delimited area comprising a laterally grown 2D hexagonal boron nitride (2D h-BN) release layer on the exposed growth surface of the sapphire substrate; and releasing, individually, one or more of the gallium nitride-based devices via localized van der Waals epitaxy; wherein lateral control of quality of the 2D h-BN release layer achieves the localized van der Waals epitaxy.
The method of claim 9 further comprising: transferring the released gallium nitride-based device to a receiving substrate.
A method comprising: growing a mechanical release layer directly on a growth surface of a growth substrate subdivided into delimited areas physically separated one from another; growing a set of nitride-based LED devices, one each on the mechanical release layer of one of the physically separated delimited areas; individually selecting a nitride-based LED device from the set of nitride-based LED devices; releasing the selected nitride-based LED device from the growth substrate via a dicing and cutting free mecha-nism directly resultant from the arrangement of the physically separated delimited areas; and B₂ transferring the selected nitride-based LED device to a receiving substrate; wherein releasing the selected nitride-based LED device comprises: positioning a liquid dissolvable tape on a support of a device capable of moving linearly with respect to a vertical axis; lowering the support such that the liquid dissolvable tape contacts the selected nitride-based LED device; affixing the selected nitride-based LED device to the liquid dissolvable tape; and removing the selected nitride-based LED device from the growth substrate by vertically lifting the support.
The method of claim 21, wherein the liquid dissolv-able tape is water dissolvable.
The method of claim 21, wherein the liquid dissolv-able tape dissolves in water within approximately one min-ute.
The method of claim 21 further comprising dissolving the liquid dissolvable tape from the nitride-based LED device after the selected nitride-based LED device is transferred to the receiving substrate.
A method comprising: growing a hexagonal boron nitride (h-BN) mechanical release layer on a growth substrate subdivided into delimited areas, each physically separated delimited area having an exposed growth surface of the growth substrate, the physically separated delimited areas separated one from another via a grid comprising dielectric material on the growth surface of the growth substrate, and the physically separated delimited areas forming discrete areas for nitride-based device growth; growing one or more nitride-based devices, each one of the one or more nitride-based devices grown in a respective one of the discrete areas for nitride-based device growth; selecting a nitride-based device from the one or more nitride-based devices; and releasing the selected nitride-based device via a dicing and cutting free mechanism; wherein: portions of the mechanical release layer directly grown on the growth surface in the discrete areas for nitride-based device growth are of a controlled qual-ity of laterally grown h-BN layers stacked together via van der Waals interactions, the control of the quality of the h-BN layers providing for localized van der Waals epitaxy of a single grown nitride-based device in a single discrete area for nitride-based device growth; portions of the mechanical release layer directly grown on the grid are of a reduced quality from those portions of the mechanical release layer forming the discrete areas for nitride-based device growth; and the releasing is dicing and cutting free as a direct result from: the reduced quality portions of the mechanical release layer directly grown on the grid; and the physical separation of each of the discrete areas for nitride-based device growth from one another. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
nitride-based LED (GaN-based LED on 2D h-BN/sapphire)
Materials described outside the worked examples.
2D hexagonal boron nitride
h-BN
nitride-based (gallium nitride-based) device material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a scanning electron microscope (SEM) image of a mechanical release layer grown on a growth substrate, according to some aspects of the present …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
blue light emission wavelength (claimed range) | 400–450 nm | — |
Thickness | 100–500 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
sapphire
Al₂O₃
silicon dioxide mask
SiO₂
aluminum gallium nitride nucleation layer
AlGaN
n-type gallium nitride (silicon-doped)
GaN:Si
p-type gallium nitride (magnesium-doped)
GaN:Mg
indium gallium nitride quantum well layer
InGaN
FIG. 4A is a SEM image of nitride-based LED devices, according to some aspects of the present disclosure.
| — |
Thickness | 2–4 nm | — |
Temperature | 1000–1400 °C | — |
Thickness | 3–20 nm | — |
Cited non-patent literature · 3
sapphire
Al₂O₃
silicon dioxide mask
SiO₂
aluminum gallium nitride nucleation layer
AlGaN
n-type gallium nitride (silicon-doped)
GaN:Si
p-type gallium nitride (magnesium-doped)
GaN:Mg
indium gallium nitride quantum well layer
InGaN
FIG. 4A is a SEM image of nitride-based LED devices, according to some aspects of the present disclosure.
| — |
Thickness | 2–4 nm | — |
Temperature | 1000–1400 °C | — |
Thickness | 3–20 nm | — |
Cited non-patent literature · 3
sapphire
Al₂O₃
silicon dioxide mask
SiO₂
aluminum gallium nitride nucleation layer
AlGaN
n-type gallium nitride (silicon-doped)
GaN:Si
p-type gallium nitride (magnesium-doped)
GaN:Mg
indium gallium nitride quantum well layer
InGaN
FIG. 4A is a SEM image of nitride-based LED devices, according to some aspects of the present disclosure.
| — |
Thickness | 2–4 nm | — |
Temperature | 1000–1400 °C | — |
Thickness | 3–20 nm | — |
Cited non-patent literature · 3
sapphire
Al₂O₃
silicon dioxide mask
SiO₂
aluminum gallium nitride nucleation layer
AlGaN
n-type gallium nitride (silicon-doped)
GaN:Si
p-type gallium nitride (magnesium-doped)
GaN:Mg
indium gallium nitride quantum well layer
InGaN
FIG. 4A is a SEM image of nitride-based LED devices, according to some aspects of the present disclosure.
| — |
Thickness | 2–4 nm | — |
Temperature | 1000–1400 °C | — |
Thickness | 3–20 nm | — |
Cited non-patent literature · 3
