Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations1 characterization5 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Bubble Diameter | Bubble 1 diameter | 2.6um | — | |||
| Bubble Diameter | Bubble 2 diameter | 4.3um | — | |||
| Bubble Diameter | Bubble 3 diameter | 7.1um | — | |||
| Bubble Diameter | Bubble 4 diameter | 9.4um | — | |||
| Film Thickness | epitaxial hBN thickness | 18nm | — |
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A single spin in hexagonal boron nitride for vectorial quantum magnetometry
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Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
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Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations1 characterization5 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Bubble Diameter | Bubble 1 diameter | 2.6um | — | |||
| Bubble Diameter | Bubble 2 diameter | 4.3um | — | |||
| Bubble Diameter | Bubble 3 diameter | 7.1um | — | |||
| Bubble Diameter | Bubble 4 diameter | 9.4um | — | |||
| Film Thickness | epitaxial hBN thickness | 18nm | — |
Related documents with shared materials, methods, properties, or citations.
A single spin in hexagonal boron nitride for vectorial quantum magnetometry
A quantum coherent spin in a two-dimensional material at room temperature
Mitigation of Delamination of Epitaxial Large-Area Boron Nitride for Semiconductor Processing
METHOD FOR LARGE SCALE GROWTH AND FABRICATION OF III-NITRIDE DEVICES ON 2D-LAYERED H-BN WITHOUT SPONTANEOUS DELAMINATION
Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence
Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN
Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations1 characterization5 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Bubble Diameter | Bubble 1 diameter | 2.6um | — | |||
| Bubble Diameter | Bubble 2 diameter | 4.3um | — | |||
| Bubble Diameter | Bubble 3 diameter | 7.1um | — | |||
| Bubble Diameter | Bubble 4 diameter | 9.4um | — | |||
| Film Thickness | epitaxial hBN thickness | 18nm | — |
Related documents with shared materials, methods, properties, or citations.
A single spin in hexagonal boron nitride for vectorial quantum magnetometry
A quantum coherent spin in a two-dimensional material at room temperature
Mitigation of Delamination of Epitaxial Large-Area Boron Nitride for Semiconductor Processing
METHOD FOR LARGE SCALE GROWTH AND FABRICATION OF III-NITRIDE DEVICES ON 2D-LAYERED H-BN WITHOUT SPONTANEOUS DELAMINATION
Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence
Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN
Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations1 characterization5 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Bubble Diameter | Bubble 1 diameter | 2.6um | — | |||
| Bubble Diameter | Bubble 2 diameter | 4.3um | — | |||
| Bubble Diameter | Bubble 3 diameter | 7.1um | — | |||
| Bubble Diameter | Bubble 4 diameter | 9.4um | — | |||
| Film Thickness | epitaxial hBN thickness | 18nm | — |
Related documents with shared materials, methods, properties, or citations.
A single spin in hexagonal boron nitride for vectorial quantum magnetometry
A quantum coherent spin in a two-dimensional material at room temperature
Mitigation of Delamination of Epitaxial Large-Area Boron Nitride for Semiconductor Processing
METHOD FOR LARGE SCALE GROWTH AND FABRICATION OF III-NITRIDE DEVICES ON 2D-LAYERED H-BN WITHOUT SPONTANEOUS DELAMINATION
Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence
Bandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlN
Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN
Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
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