A single spin in hexagonal boron nitride for vectorial quantum magnetometry

Paper details

Research paper

Experimental GrowthExperimental Characterization

Carmem M. Gilardoni, Simone Eizagirre Barker, Catherine L. Curtin, Stephanie A. Fraser et al.

arXiv·2024·10.48550/arXiv.2403.12291·arXiv:2408.10348

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 preparation2 characterizations11 properties1 figure

ExperimentalhBNStudied Material

hexagonal boron nitride

hBN

Studied Material

Also known as

hBNhexagonal boron nitride

studied material

triethylboron

B(C₂H₅)3

Precursor

Related documents with shared materials, methods, properties, or citations.

A single spin in hexagonal boron nitride for vectorial quantum magnetometry | Matter42 Literature

Type	Label	Value	Material	Sample	Source
PL Peak	zero-phonon line	2.1eV	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fA	22%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fB	30%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fA	1.8%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fB	12.9%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fC	2.7%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Fet Threshold Voltage	zero-field splitting D	2.025GHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Fet Threshold Voltage	zero-field splitting E	70MHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
PL Peak	ODMR resonance fA	0.129GHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
PL Peak	ODMR resonance fB	1.95GHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
PL Peak	bias field	51mT	hBN	Wafer-scale multilayer hBN hosting individually addressable	—

Type	Label	Value	Material	Sample	Source
PL Peak	zero-phonon line	2.1eV	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fA	22%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fB	30%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fA	1.8%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fB	12.9%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fC	2.7%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Fet Threshold Voltage	zero-field splitting D	2.025GHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Fet Threshold Voltage	zero-field splitting E	70MHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
PL Peak	ODMR resonance fA	0.129GHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
PL Peak	ODMR resonance fB	1.95GHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
PL Peak	bias field	51mT	hBN	Wafer-scale multilayer hBN hosting individually addressable	—

Type	Label	Value	Material	Sample	Source
PL Peak	zero-phonon line	2.1eV	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fA	22%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fB	30%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fA	1.8%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fB	12.9%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fC	2.7%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Fet Threshold Voltage	zero-field splitting D	2.025GHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Fet Threshold Voltage	zero-field splitting E	70MHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
PL Peak	ODMR resonance fA	0.129GHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
PL Peak	ODMR resonance fB	1.95GHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
PL Peak	bias field	51mT	hBN	Wafer-scale multilayer hBN hosting individually addressable	—

Type	Label	Value	Material	Sample	Source
PL Peak	zero-phonon line	2.1eV	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fA	22%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fB	30%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fA	1.8%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fB	12.9%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Raman Peak Intensity	ODMR contrast fC	2.7%	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Fet Threshold Voltage	zero-field splitting D	2.025GHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
Fet Threshold Voltage	zero-field splitting E	70MHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
PL Peak	ODMR resonance fA	0.129GHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
PL Peak	ODMR resonance fB	1.95GHz	hBN	Wafer-scale multilayer hBN hosting individually addressable	—
PL Peak	bias field	51mT	hBN	Wafer-scale multilayer hBN hosting individually addressable	—