Abstract

We investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emit in the telecom C-band. Using pump-probe Faraday ellipticity measurements, we determine electron and hole g-factors of |ge| = 0.934 and |gh| = 0.471, with the electron g-factor being nearly twice as low as typical molecular beam epitaxy Stranski-Krastanov (SK) grown samples. Most significantly, we measure a longitudinal spin relaxation time T₁ = 2.95µs, representing an order of magnitude improvement over comparable MBE SK grown samples. Despite significant electron g-factor anisotropy, we observed that it is reduced relative to similar material composition samples grown with MBE or MOVPE SK methods. We attribute these g-factor anisotropy and spin lifetime improvements to the enhanced structural symmetry achieved via MOVPE droplet epitaxy, which mitigates the inherent structural asymmetry in strain-driven growth approaches for InAs/InP quantum dots. These results demonstrate that MOVPE droplet epitaxy-grown InAs/InGaAs/InP quantum dots exhibit favorable spin properties for potential implementation in quantum information applications.

Abstract

We investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emit in the telecom C-band. Using pump-probe Faraday ellipticity measurements, we determine electron and hole g-factors of |ge| = 0.934 and |gh| = 0.471, with the electron g-factor being nearly twice as low as typical molecular beam epitaxy Stranski-Krastanov (SK) grown samples. Most significantly, we measure a longitudinal spin relaxation time T₁ = 2.95µs, representing an order of magnitude improvement over comparable MBE SK grown samples. Despite significant electron g-factor anisotropy, we observed that it is reduced relative to similar material composition samples grown with MBE or MOVPE SK methods. We attribute these g-factor anisotropy and spin lifetime improvements to the enhanced structural symmetry achieved via MOVPE droplet epitaxy, which mitigates the inherent structural asymmetry in strain-driven growth approaches for InAs/InP quantum dots. These results demonstrate that MOVPE droplet epitaxy-grown InAs/InGaAs/InP quantum dots exhibit favorable spin properties for potential implementation in quantum information applications.

Abstract

We investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emit in the telecom C-band. Using pump-probe Faraday ellipticity measurements, we determine electron and hole g-factors of |ge| = 0.934 and |gh| = 0.471, with the electron g-factor being nearly twice as low as typical molecular beam epitaxy Stranski-Krastanov (SK) grown samples. Most significantly, we measure a longitudinal spin relaxation time T₁ = 2.95µs, representing an order of magnitude improvement over comparable MBE SK grown samples. Despite significant electron g-factor anisotropy, we observed that it is reduced relative to similar material composition samples grown with MBE or MOVPE SK methods. We attribute these g-factor anisotropy and spin lifetime improvements to the enhanced structural symmetry achieved via MOVPE droplet epitaxy, which mitigates the inherent structural asymmetry in strain-driven growth approaches for InAs/InP quantum dots. These results demonstrate that MOVPE droplet epitaxy-grown InAs/InGaAs/InP quantum dots exhibit favorable spin properties for potential implementation in quantum information applications.

Abstract

We investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emit in the telecom C-band. Using pump-probe Faraday ellipticity measurements, we determine electron and hole g-factors of |ge| = 0.934 and |gh| = 0.471, with the electron g-factor being nearly twice as low as typical molecular beam epitaxy Stranski-Krastanov (SK) grown samples. Most significantly, we measure a longitudinal spin relaxation time T₁ = 2.95µs, representing an order of magnitude improvement over comparable MBE SK grown samples. Despite significant electron g-factor anisotropy, we observed that it is reduced relative to similar material composition samples grown with MBE or MOVPE SK methods. We attribute these g-factor anisotropy and spin lifetime improvements to the enhanced structural symmetry achieved via MOVPE droplet epitaxy, which mitigates the inherent structural asymmetry in strain-driven growth approaches for InAs/InP quantum dots. These results demonstrate that MOVPE droplet epitaxy-grown InAs/InGaAs/InP quantum dots exhibit favorable spin properties for potential implementation in quantum information applications.