Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
MOVPE droplet epitaxy-grown telecom quantum-dot heterostructure on (100)-oriented InP, consisting of an InP buffer, three repetitions of an active region with In0.47Ga0.53As interlayer, InAs quantum dots, InP capping, and InP burial layers.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
MOVPE droplet epitaxy-grown telecom quantum-dot heterostructure on (100)-oriented InP, consisting of an InP buffer, three repetitions of an active region with In0.47Ga0.53As interlayer, InAs quantum dots, InP capping, and InP burial layers.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
MOVPE droplet epitaxy-grown telecom quantum-dot heterostructure on (100)-oriented InP, consisting of an InP buffer, three repetitions of an active region with In0.47Ga0.53As interlayer, InAs quantum dots, InP capping, and InP burial layers.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
MOVPE droplet epitaxy-grown telecom quantum-dot heterostructure on (100)-oriented InP, consisting of an InP buffer, three repetitions of an active region with In0.47Ga0.53As interlayer, InAs quantum dots, InP capping, and InP burial layers.
