Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region

Bartosz KAMIŃSKI; Agata ZIELIŃSKA; Anna MUSIAŁ; Ching-Wen SHIH; Imad LIMAME; Sven RODT; Stephan REITZENSTEIN; Grzegorz SĘK

doi:10.15199/48.2023.10.62

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputed Raman

Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region

Bartosz KAMIŃSKI, Agata ZIELIŃSKA, Anna MUSIAŁ, Ching-Wen SHIH et al.

2025·10.15199/48.2023.10.62·arXiv:2305.04938

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Reference structure without DBRs for optical characterization of the active region independent of the cavity; In0.37Ga0.63As/GaAs quantum dots formed by self-assembly in Stranski-Krastanow growth mode on GaAs substrate.

1 preparation1 characterization6 properties4 figures

ExperimentalIn0.37Ga0.63AsStudied MaterialGaAsSubstrate / Dielectric

Full DBR-based planar cavity with a single QD layer inside the cavity, GaAs λ/4 cap on the upper mirror, bottom mirror with 33.5 pairs and top mirror with 29.5 pairs of Al0.9Ga0.1As/Al0.2Ga0.8As layers, grown on (001) GaAs substrate.

1 preparation2 characterizations5 figures

ExperimentalIn0.37Ga0.63AsStudied MaterialGaAsSubstrate / DielectricAl0.2Ga0.8AsStudied MaterialAl0.9Ga0.1AsStudied Material

Materials

In0.37Ga0.63As

Studied Material

Also known as

InGaAs quantum dotsIn(Ga)As QDs

Variables

In_content= 0.37

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Pl Peak Shift	QD emission blueshift relative to bulk In0.37Ga0.63As	0.3eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Fwhm	QD emission ensemble	65nm	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Fwhm	inhomogeneous broadening	0.02eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Fwhm	inhomogeneous broadening	0.08eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Activation Energy	PL quenching activation energy	0.1eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Intensity	QD emission	normalized integrated intensity	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—

Properties

Type	Label	Value	Material	Sample	Source
Pl Peak Shift	QD emission blueshift relative to bulk In0.37Ga0.63As	0.3eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Fwhm	QD emission ensemble	65nm	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Fwhm	inhomogeneous broadening	0.02eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Fwhm	inhomogeneous broadening	0.08eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Activation Energy	PL quenching activation energy	0.1eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Intensity	QD emission	normalized integrated intensity	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—

Properties

Type	Label	Value	Material	Sample	Source
Pl Peak Shift	QD emission blueshift relative to bulk In0.37Ga0.63As	0.3eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Fwhm	QD emission ensemble	65nm	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Fwhm	inhomogeneous broadening	0.02eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Fwhm	inhomogeneous broadening	0.08eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Activation Energy	PL quenching activation energy	0.1eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Intensity	QD emission	normalized integrated intensity	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—

Properties

Type	Label	Value	Material	Sample	Source
Pl Peak Shift	QD emission blueshift relative to bulk In0.37Ga0.63As	0.3eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Fwhm	QD emission ensemble	65nm	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Fwhm	inhomogeneous broadening	0.02eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Fwhm	inhomogeneous broadening	0.08eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Activation Energy	PL quenching activation energy	0.1eV	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—
Pl Peak Intensity	QD emission	normalized integrated intensity	In0.37Ga0.63As	Reference structure without DBRs for optical characterizatio	—

Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region

Samples

Reference structure without DBRs for optical characterization of the active region independent of the cavity; In0.37Ga0.63As/GaAs quantum dots formed by self-assembly in Stranski-Krastanow growth mode on GaAs substrate.

Full DBR-based planar cavity with a single QD layer inside the cavity, GaAs λ/4 cap on the upper mirror, bottom mirror with 33.5 pairs and top mirror with 29.5 pairs of Al0.9Ga0.1As/Al0.2Ga0.8As layers, grown on (001) GaAs substrate.

Materials

Why these are connected

Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region

Samples

Reference structure without DBRs for optical characterization of the active region independent of the cavity; In0.37Ga0.63As/GaAs quantum dots formed by self-assembly in Stranski-Krastanow growth mode on GaAs substrate.

Full DBR-based planar cavity with a single QD layer inside the cavity, GaAs λ/4 cap on the upper mirror, bottom mirror with 33.5 pairs and top mirror with 29.5 pairs of Al0.9Ga0.1As/Al0.2Ga0.8As layers, grown on (001) GaAs substrate.

Materials

Why these are connected

Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region

Samples

Reference structure without DBRs for optical characterization of the active region independent of the cavity; In0.37Ga0.63As/GaAs quantum dots formed by self-assembly in Stranski-Krastanow growth mode on GaAs substrate.

Full DBR-based planar cavity with a single QD layer inside the cavity, GaAs λ/4 cap on the upper mirror, bottom mirror with 33.5 pairs and top mirror with 29.5 pairs of Al0.9Ga0.1As/Al0.2Ga0.8As layers, grown on (001) GaAs substrate.

Materials

Why these are connected

Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region

Samples

Reference structure without DBRs for optical characterization of the active region independent of the cavity; In0.37Ga0.63As/GaAs quantum dots formed by self-assembly in Stranski-Krastanow growth mode on GaAs substrate.

Full DBR-based planar cavity with a single QD layer inside the cavity, GaAs λ/4 cap on the upper mirror, bottom mirror with 33.5 pairs and top mirror with 29.5 pairs of Al0.9Ga0.1As/Al0.2Ga0.8As layers, grown on (001) GaAs substrate.

Materials

Why these are connected

Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region

Samples

Reference structure without DBRs for optical characterization of the active region independent of the cavity; In0.37Ga0.63As/GaAs quantum dots formed by self-assembly in Stranski-Krastanow growth mode on GaAs substrate.

Full DBR-based planar cavity with a single QD layer inside the cavity, GaAs λ/4 cap on the upper mirror, bottom mirror with 33.5 pairs and top mirror with 29.5 pairs of Al0.9Ga0.1As/Al0.2Ga0.8As layers, grown on (001) GaAs substrate.

Materials

Why these are connected

Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region

Samples

Reference structure without DBRs for optical characterization of the active region independent of the cavity; In0.37Ga0.63As/GaAs quantum dots formed by self-assembly in Stranski-Krastanow growth mode on GaAs substrate.

Full DBR-based planar cavity with a single QD layer inside the cavity, GaAs λ/4 cap on the upper mirror, bottom mirror with 33.5 pairs and top mirror with 29.5 pairs of Al0.9Ga0.1As/Al0.2Ga0.8As layers, grown on (001) GaAs substrate.

Materials

Why these are connected

Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region

Samples

Reference structure without DBRs for optical characterization of the active region independent of the cavity; In0.37Ga0.63As/GaAs quantum dots formed by self-assembly in Stranski-Krastanow growth mode on GaAs substrate.

Full DBR-based planar cavity with a single QD layer inside the cavity, GaAs λ/4 cap on the upper mirror, bottom mirror with 33.5 pairs and top mirror with 29.5 pairs of Al0.9Ga0.1As/Al0.2Ga0.8As layers, grown on (001) GaAs substrate.

Materials

Why these are connected

Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region

Samples

Reference structure without DBRs for optical characterization of the active region independent of the cavity; In0.37Ga0.63As/GaAs quantum dots formed by self-assembly in Stranski-Krastanow growth mode on GaAs substrate.

Full DBR-based planar cavity with a single QD layer inside the cavity, GaAs λ/4 cap on the upper mirror, bottom mirror with 33.5 pairs and top mirror with 29.5 pairs of Al0.9Ga0.1As/Al0.2Ga0.8As layers, grown on (001) GaAs substrate.

Materials

Why these are connected

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