Patent
US 11,424,597TUNNEL JUNCTION FOR GASA BASED VCSELS AND METHOD THEREFORE
PING-SHOW WONG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,424,597Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a buried tunnel junction (BTJ) for use in a vertical cavity surface- emitting laser; [0015]
FIG. 2 is a cross section view of a test device used to characterize properties of a tunnel junction; [0016]
FIG. 3 is the cross section of a vertical cavity surface emitting laser with a buried tunnel junction aperture of the present invention; [0017]
FIG. 4 is the tunnel junction of the vertical cavity surface emitting laser with a buried tunnel junction aperture of the present invention; [0018]
FIG. 5 is the voltage-current behavior of a Te doped tunnel junction; [0019]
FIG. 6A is the current-voltage behavior of a tunnel junction vertical cavity surface emitting laser fabricated according to the current invention; and [0020]
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A vertical-cavity surface-emitting laser (V C SEL) comprising: a substrate formed of GaAs; a pair of mirrors, wherein the pair of mirrors comprises a bottom N-type mirror formed on the substrate; and a top mirror, wherein the top mirror has a bottom section attached to a top section, the top section of the top mirror being an N-type top section and the bottom section being a P-type bottom section; a tunnel junction formed between the bottom section and the top section of the top mirror, the tunnel junction formed directly on the bottom section of the top mirror, wherein the tunnel junction comprises: a p-layer formed directly on the bottom section of the top mirror and having a p++ do p ant; and an n-layer formed on the p-layer, wherein Tellurium is used as an n++ dopant in the n-layer; wherein the p-layer and the n-layer of the tunnel junction are formed of GaAs, AI GaAs, or I nGaP; and wherein the n++ d o pant exceeds doping levels of 2E₁₉ cm⁻³ and the p++ d op ant exceeds doping levels greater than I E₂₀ cm -3 Currently amended
3. The V C SEL of Claim 1, wherein Carbon is used as the a p+ + dopant in the p-layer. Currently amended
6. The VCSEL of Claim 1, comprising: an active region formed between the pair of mirrors. Previously presented
2. Canceled
4 Canceled
5. Canceled
8. Canceled
9. Canceled
10. Canceled
11. Canceled
12. Canceled
13. Canceled
14. Canceled
15. Canceled
16. A vertical-cavity surface-emitting laser (VCSE L) comprising: a substrate; a first mirror formed on the substrate, the first mirror being a first N-type mirror; an active region formed on the first mirror; a second mirror formed above the active region, the second mirror comprising: a bottom mirror section formed on the active region; and a top mirror section formed on and attached to the bottom mirror section, the top mirror section being a second N-type mirror; and a tunnel junction formed directly on the bottom mirror section of the second mirror; wherein the tunnel junction comprises: a p-layer formed directly on the bottom mirror section, wherein Carbon is used as a p++ dopant in the p-layer; and an n-layer formed on the p-layer, wherein Tellurium is used as an n++ dopant in the n-l ayer and exceeds doping levels of 2E₁₉ cm⁻³ and carbon is used as the p+ + dopant in the p-layer and has doping levels greater than 1 E₂₀ cm- 3; wherein the p-layer and the n-layer of the tunnel junction are formed of GaAs, AIGaAs, or InGaP. Previously presented
17. The V C SEL of Claim 16, comprising: a metal layer formed on the second mirror; and an opening formed in the metal layer. Original
18. The V C SEL of Claim 16, wherein Carbon is used as a p ++ dopant in the p-layer. Original
20. The VCSEL of Claim 16, wherein the substrate is formed of GaAs. Original
19. Canceled
21. Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
8 materials1 process step
A tunnel junction verification structure was grown using a low-pressure (100 torr) MOCVD reactor with trimethylaluminum, trimethylgallium, trimethylindium, arsine, phosphine, disilane, diethyltelluride, and carbontetrabromide. The structure comprises a p++ layer (GaAs:C, AlGaAs:C, or InGaP:C) and an n++ layer (GaAs:Te, AlGaAs:Te, or InGaP:Te) sandwiched between a GaAs p-n junction. Mesas of various shapes and sizes were etched to facilitate current confinement for I-V measurement.
Layer stacks claimed or described, ordered top of device to substrate.
BTJ VCSEL (Claim 1)
Materials described outside the worked examples.
Carbon (p++ dopant)
C
GaAs:Te (n++ layer)
GaAs:Te
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 100000000000000000000 cm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Impact of Surface Passivation on the Efficiency and High-speed Modulation of III–V GaAs/AlGaAs Nanopillar Array LEDs
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
Patent
Atlas literature
Patent
US 11,424,597Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a buried tunnel junction (BTJ) for use in a vertical cavity surface- emitting laser; [0015]
FIG. 2 is a cross section view of a test device used to characterize properties of a tunnel junction; [0016]
FIG. 3 is the cross section of a vertical cavity surface emitting laser with a buried tunnel junction aperture of the present invention; [0017]
FIG. 4 is the tunnel junction of the vertical cavity surface emitting laser with a buried tunnel junction aperture of the present invention; [0018]
FIG. 5 is the voltage-current behavior of a Te doped tunnel junction; [0019]
FIG. 6A is the current-voltage behavior of a tunnel junction vertical cavity surface emitting laser fabricated according to the current invention; and [0020]
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A vertical-cavity surface-emitting laser (V C SEL) comprising: a substrate formed of GaAs; a pair of mirrors, wherein the pair of mirrors comprises a bottom N-type mirror formed on the substrate; and a top mirror, wherein the top mirror has a bottom section attached to a top section, the top section of the top mirror being an N-type top section and the bottom section being a P-type bottom section; a tunnel junction formed between the bottom section and the top section of the top mirror, the tunnel junction formed directly on the bottom section of the top mirror, wherein the tunnel junction comprises: a p-layer formed directly on the bottom section of the top mirror and having a p++ do p ant; and an n-layer formed on the p-layer, wherein Tellurium is used as an n++ dopant in the n-layer; wherein the p-layer and the n-layer of the tunnel junction are formed of GaAs, AI GaAs, or I nGaP; and wherein the n++ d o pant exceeds doping levels of 2E₁₉ cm⁻³ and the p++ d op ant exceeds doping levels greater than I E₂₀ cm -3 Currently amended
3. The V C SEL of Claim 1, wherein Carbon is used as the a p+ + dopant in the p-layer. Currently amended
6. The VCSEL of Claim 1, comprising: an active region formed between the pair of mirrors. Previously presented
2. Canceled
4 Canceled
5. Canceled
8. Canceled
9. Canceled
10. Canceled
11. Canceled
12. Canceled
13. Canceled
14. Canceled
15. Canceled
16. A vertical-cavity surface-emitting laser (VCSE L) comprising: a substrate; a first mirror formed on the substrate, the first mirror being a first N-type mirror; an active region formed on the first mirror; a second mirror formed above the active region, the second mirror comprising: a bottom mirror section formed on the active region; and a top mirror section formed on and attached to the bottom mirror section, the top mirror section being a second N-type mirror; and a tunnel junction formed directly on the bottom mirror section of the second mirror; wherein the tunnel junction comprises: a p-layer formed directly on the bottom mirror section, wherein Carbon is used as a p++ dopant in the p-layer; and an n-layer formed on the p-layer, wherein Tellurium is used as an n++ dopant in the n-l ayer and exceeds doping levels of 2E₁₉ cm⁻³ and carbon is used as the p+ + dopant in the p-layer and has doping levels greater than 1 E₂₀ cm- 3; wherein the p-layer and the n-layer of the tunnel junction are formed of GaAs, AIGaAs, or InGaP. Previously presented
17. The V C SEL of Claim 16, comprising: a metal layer formed on the second mirror; and an opening formed in the metal layer. Original
18. The V C SEL of Claim 16, wherein Carbon is used as a p ++ dopant in the p-layer. Original
20. The VCSEL of Claim 16, wherein the substrate is formed of GaAs. Original
19. Canceled
21. Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
8 materials1 process step
A tunnel junction verification structure was grown using a low-pressure (100 torr) MOCVD reactor with trimethylaluminum, trimethylgallium, trimethylindium, arsine, phosphine, disilane, diethyltelluride, and carbontetrabromide. The structure comprises a p++ layer (GaAs:C, AlGaAs:C, or InGaP:C) and an n++ layer (GaAs:Te, AlGaAs:Te, or InGaP:Te) sandwiched between a GaAs p-n junction. Mesas of various shapes and sizes were etched to facilitate current confinement for I-V measurement.
Layer stacks claimed or described, ordered top of device to substrate.
BTJ VCSEL (Claim 1)
Materials described outside the worked examples.
Carbon (p++ dopant)
C
GaAs:Te (n++ layer)
GaAs:Te
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 100000000000000000000 cm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Impact of Surface Passivation on the Efficiency and High-speed Modulation of III–V GaAs/AlGaAs Nanopillar Array LEDs
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
Patent
Atlas literature
Patent
US 11,424,597Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a buried tunnel junction (BTJ) for use in a vertical cavity surface- emitting laser; [0015]
FIG. 2 is a cross section view of a test device used to characterize properties of a tunnel junction; [0016]
FIG. 3 is the cross section of a vertical cavity surface emitting laser with a buried tunnel junction aperture of the present invention; [0017]
FIG. 4 is the tunnel junction of the vertical cavity surface emitting laser with a buried tunnel junction aperture of the present invention; [0018]
FIG. 5 is the voltage-current behavior of a Te doped tunnel junction; [0019]
FIG. 6A is the current-voltage behavior of a tunnel junction vertical cavity surface emitting laser fabricated according to the current invention; and [0020]
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A vertical-cavity surface-emitting laser (V C SEL) comprising: a substrate formed of GaAs; a pair of mirrors, wherein the pair of mirrors comprises a bottom N-type mirror formed on the substrate; and a top mirror, wherein the top mirror has a bottom section attached to a top section, the top section of the top mirror being an N-type top section and the bottom section being a P-type bottom section; a tunnel junction formed between the bottom section and the top section of the top mirror, the tunnel junction formed directly on the bottom section of the top mirror, wherein the tunnel junction comprises: a p-layer formed directly on the bottom section of the top mirror and having a p++ do p ant; and an n-layer formed on the p-layer, wherein Tellurium is used as an n++ dopant in the n-layer; wherein the p-layer and the n-layer of the tunnel junction are formed of GaAs, AI GaAs, or I nGaP; and wherein the n++ d o pant exceeds doping levels of 2E₁₉ cm⁻³ and the p++ d op ant exceeds doping levels greater than I E₂₀ cm -3 Currently amended
3. The V C SEL of Claim 1, wherein Carbon is used as the a p+ + dopant in the p-layer. Currently amended
6. The VCSEL of Claim 1, comprising: an active region formed between the pair of mirrors. Previously presented
2. Canceled
4 Canceled
5. Canceled
8. Canceled
9. Canceled
10. Canceled
11. Canceled
12. Canceled
13. Canceled
14. Canceled
15. Canceled
16. A vertical-cavity surface-emitting laser (VCSE L) comprising: a substrate; a first mirror formed on the substrate, the first mirror being a first N-type mirror; an active region formed on the first mirror; a second mirror formed above the active region, the second mirror comprising: a bottom mirror section formed on the active region; and a top mirror section formed on and attached to the bottom mirror section, the top mirror section being a second N-type mirror; and a tunnel junction formed directly on the bottom mirror section of the second mirror; wherein the tunnel junction comprises: a p-layer formed directly on the bottom mirror section, wherein Carbon is used as a p++ dopant in the p-layer; and an n-layer formed on the p-layer, wherein Tellurium is used as an n++ dopant in the n-l ayer and exceeds doping levels of 2E₁₉ cm⁻³ and carbon is used as the p+ + dopant in the p-layer and has doping levels greater than 1 E₂₀ cm- 3; wherein the p-layer and the n-layer of the tunnel junction are formed of GaAs, AIGaAs, or InGaP. Previously presented
17. The V C SEL of Claim 16, comprising: a metal layer formed on the second mirror; and an opening formed in the metal layer. Original
18. The V C SEL of Claim 16, wherein Carbon is used as a p ++ dopant in the p-layer. Original
20. The VCSEL of Claim 16, wherein the substrate is formed of GaAs. Original
19. Canceled
21. Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
8 materials1 process step
A tunnel junction verification structure was grown using a low-pressure (100 torr) MOCVD reactor with trimethylaluminum, trimethylgallium, trimethylindium, arsine, phosphine, disilane, diethyltelluride, and carbontetrabromide. The structure comprises a p++ layer (GaAs:C, AlGaAs:C, or InGaP:C) and an n++ layer (GaAs:Te, AlGaAs:Te, or InGaP:Te) sandwiched between a GaAs p-n junction. Mesas of various shapes and sizes were etched to facilitate current confinement for I-V measurement.
Layer stacks claimed or described, ordered top of device to substrate.
BTJ VCSEL (Claim 1)
Materials described outside the worked examples.
Carbon (p++ dopant)
C
GaAs:Te (n++ layer)
GaAs:Te
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 100000000000000000000 cm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Impact of Surface Passivation on the Efficiency and High-speed Modulation of III–V GaAs/AlGaAs Nanopillar Array LEDs
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
Patent
Atlas literature
Patent
US 11,424,597Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a buried tunnel junction (BTJ) for use in a vertical cavity surface- emitting laser; [0015]
FIG. 2 is a cross section view of a test device used to characterize properties of a tunnel junction; [0016]
FIG. 3 is the cross section of a vertical cavity surface emitting laser with a buried tunnel junction aperture of the present invention; [0017]
FIG. 4 is the tunnel junction of the vertical cavity surface emitting laser with a buried tunnel junction aperture of the present invention; [0018]
FIG. 5 is the voltage-current behavior of a Te doped tunnel junction; [0019]
FIG. 6A is the current-voltage behavior of a tunnel junction vertical cavity surface emitting laser fabricated according to the current invention; and [0020]
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A vertical-cavity surface-emitting laser (V C SEL) comprising: a substrate formed of GaAs; a pair of mirrors, wherein the pair of mirrors comprises a bottom N-type mirror formed on the substrate; and a top mirror, wherein the top mirror has a bottom section attached to a top section, the top section of the top mirror being an N-type top section and the bottom section being a P-type bottom section; a tunnel junction formed between the bottom section and the top section of the top mirror, the tunnel junction formed directly on the bottom section of the top mirror, wherein the tunnel junction comprises: a p-layer formed directly on the bottom section of the top mirror and having a p++ do p ant; and an n-layer formed on the p-layer, wherein Tellurium is used as an n++ dopant in the n-layer; wherein the p-layer and the n-layer of the tunnel junction are formed of GaAs, AI GaAs, or I nGaP; and wherein the n++ d o pant exceeds doping levels of 2E₁₉ cm⁻³ and the p++ d op ant exceeds doping levels greater than I E₂₀ cm -3 Currently amended
3. The V C SEL of Claim 1, wherein Carbon is used as the a p+ + dopant in the p-layer. Currently amended
6. The VCSEL of Claim 1, comprising: an active region formed between the pair of mirrors. Previously presented
2. Canceled
4 Canceled
5. Canceled
8. Canceled
9. Canceled
10. Canceled
11. Canceled
12. Canceled
13. Canceled
14. Canceled
15. Canceled
16. A vertical-cavity surface-emitting laser (VCSE L) comprising: a substrate; a first mirror formed on the substrate, the first mirror being a first N-type mirror; an active region formed on the first mirror; a second mirror formed above the active region, the second mirror comprising: a bottom mirror section formed on the active region; and a top mirror section formed on and attached to the bottom mirror section, the top mirror section being a second N-type mirror; and a tunnel junction formed directly on the bottom mirror section of the second mirror; wherein the tunnel junction comprises: a p-layer formed directly on the bottom mirror section, wherein Carbon is used as a p++ dopant in the p-layer; and an n-layer formed on the p-layer, wherein Tellurium is used as an n++ dopant in the n-l ayer and exceeds doping levels of 2E₁₉ cm⁻³ and carbon is used as the p+ + dopant in the p-layer and has doping levels greater than 1 E₂₀ cm- 3; wherein the p-layer and the n-layer of the tunnel junction are formed of GaAs, AIGaAs, or InGaP. Previously presented
17. The V C SEL of Claim 16, comprising: a metal layer formed on the second mirror; and an opening formed in the metal layer. Original
18. The V C SEL of Claim 16, wherein Carbon is used as a p ++ dopant in the p-layer. Original
20. The VCSEL of Claim 16, wherein the substrate is formed of GaAs. Original
19. Canceled
21. Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
8 materials1 process step
A tunnel junction verification structure was grown using a low-pressure (100 torr) MOCVD reactor with trimethylaluminum, trimethylgallium, trimethylindium, arsine, phosphine, disilane, diethyltelluride, and carbontetrabromide. The structure comprises a p++ layer (GaAs:C, AlGaAs:C, or InGaP:C) and an n++ layer (GaAs:Te, AlGaAs:Te, or InGaP:Te) sandwiched between a GaAs p-n junction. Mesas of various shapes and sizes were etched to facilitate current confinement for I-V measurement.
Layer stacks claimed or described, ordered top of device to substrate.
BTJ VCSEL (Claim 1)
Materials described outside the worked examples.
Carbon (p++ dopant)
C
GaAs:Te (n++ layer)
GaAs:Te
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 100000000000000000000 cm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Impact of Surface Passivation on the Efficiency and High-speed Modulation of III–V GaAs/AlGaAs Nanopillar Array LEDs
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
BTJ VCSEL (Claim 16)
AlGaAs:Te (n++ layer)
AlGaAs:Te
InGaP:Te (n++ layer)
InGaP:Te
| — |
BTJ VCSEL (Claim 16)
AlGaAs:Te (n++ layer)
AlGaAs:Te
InGaP:Te (n++ layer)
InGaP:Te
| — |
BTJ VCSEL (Claim 16)
AlGaAs:Te (n++ layer)
AlGaAs:Te
InGaP:Te (n++ layer)
InGaP:Te
| — |
BTJ VCSEL (Claim 16)
AlGaAs:Te (n++ layer)
AlGaAs:Te
InGaP:Te (n++ layer)
InGaP:Te
| — |