GALLIUM ARSENIDE HETEROJUNCTION SEMICONDUCTOR STRUCTURE

Brian G. Moser

Patent

Atlas literature

Patent

US 9,761,678

GALLIUM ARSENIDE HETEROJUNCTION SEMICONDUCTOR STRUCTURE

Brian G. Moser

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

19 independent · 12 dependent

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18
IndependentGaAsGaInNAsSbheterojunction bipolar transistor (HBT)
A method of forming a semiconductor structure comprising: providing a semiconductor substrate formed from Gallium Arsenide (GaAs); forming a collector layer over the semiconductor substrate; forming a base layer over the semiconductor substrate such that the base layer is formed from a Gallium Indium Nitride Arsenide Antimonide (GaInNAsSb) compound; and forming an emitter layer over the semiconductor substrate. withdrawn
1. 19
  Dependent← claim 18GaInNAsSb
  The method of claim 18 wherein forming the base layer over the semiconductor substrate comprises growing the base layer epitaxially such that the GaInNAsSb compound is a GaInNAsSb crystal. withdrawn
2. 24
  Dependent← claim 18GaInNAsSbAlGaAsInGaPGaAsheterojunction bipolar transistor (HBT)
  The method of claim 18 wherein: forming the collector layer over the semiconductor substrate comprises growing the collector layer epitaxially over the semiconductor substrate so that the collector layer is formed as a ﬁrst crystal doped such that the collector layer is n-type, the ﬁrst crystal being selected from a group consisting of an Aluminum Gallium Arsenide (AlGaAs) crystal, an Indium Gallium Phosphide (InGaP) crystal, and a GaAs crystal; forming the base layer comprises growing the base layer epitaxially on the collector layer such that the GaInNAsSb compound is a GaInNAsSb crystal doped such that the base layer is p- type; and forming the emitter layer over the semiconductor substrate comprises growing the emitter layer epitaxially on the base layer such that the emitter layer is formed as a second crystal doped such that the emitter layer is n-type, the second crystal being selected from a group consisting of an AlGaAs crystal and an InGaP crystal. withdrawn
28
IndependentGaAsGaInNAsSbInGaAsheterojunction bipolar transistor (HBT)
A heterojunction bipolar transistor (HBT) comprising: a semiconductor substrate formed from a Gallium Arsenide (GaAs) crystal having a ﬁrst lattice constant; a base layer formed over the semiconductor substrate, wherein the base layer is epitaxial so as to be formed from a Gallium Indium Nitride Arsenide Antimonide (GaInNAsSb) crystal having a second lattice constant and having a ﬁrst bandgap, wherein the second lattice constant substantially matches the ﬁrst lattice constant of the GaAs crystal and wherein the GaInNAsSB crystal is doped such that the base layer is p-type; 4 Attorney Docket No. 2867-1001 Application No. 13/655,659 a collector layer formed over the semiconductor substrate, wherein the collector layer is epitaxial so as to be formed from a third crystal having a third lattice constant that substantially matches the ﬁrst lattice constant of the GaAs crystal, and wherein the third crystal is doped such that the collector layer is n-type and the base layer is formed on the collector layer so that a ﬁrst heterojunction of the HBT is provided between the collector layer and so that the ﬁrst heterojunction has ﬁrst bandgap discontinuity; an emitter layer formed over the semiconductor substrate wherein the emitter layer is epitaxial so as to be formed from an Indium Gallium Arsenide (InGaAs) crystal having a fourth lattice constant that substantially matches the ﬁrst lattice constant of the GaAs crystal and wherein the I nGaAs crystal is doped such that the emitter layer is n-type and the base layer is formed on the emitter layer so that a second heterojunction of the HBT is provided between the base layer and the emitter layer and so that the second heterojunction of the HBT has a second bandgap discontinuity, wherein the ﬁrst bandgap discontinuity and the second bandgap discontinuity deﬁne a turn on voltage of the HBT and a knee voltage of the HBT.
1. 29
  Dependent← claim 28GaInNAsSbInGaAsheterojunction bipolar transistor (HBT)
  The HBT of claim 28 wherein the GaInNAsSB crystal and the third crystal are conﬁgured to provide the ﬁrst heterojunction such that the ﬁrst bandgap discontinuity only includes a ﬁrst valence bandgap discontinuity, and wherein the third crystal and the InGaAs crystal are conﬁgured such that the second bandgap discontinuity is divided between a second valence band discontinuity and a ﬁrst conduction band discontinuity.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

heterojunction bipolar transistor (HBT)

InGaAsemitter

GaInNAsSbbase

collectorcollector

GaAssubstrate

Materials

Materials described outside the worked examples.

Gallium Arsenide

GaAs

Semiconductor Substrate

Gallium Indium Nitride Arsenide Antimonide

GaInNAsSb

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
—	1.8–1.9 eV	—
—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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