Patent
US 8,619,356MULTI-LAYER GALLIUM ARSENIDE-BASED FRESNEL PHASE-SHIFT DEVICE FOR INFRARED WAVELENGTH CONVERSION
David Weyburne
US
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Patent
Atlas literature
Patent
US 8,619,356Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic side view of a layered structure for quasi-phase- matching according to the teachings of the present invention showing thin Al xGaixAs …
FIG. 2 is a schematic side view of a crystal structure according to the teachings of the present invention showing the input of a pump beam into the crystal …
FIG. 3 is a schematic side view of a crystal structure according to the teachings of the present invention showing pump beam propagation through the wafer and …
FIG. 4 shows one possible implementation of the new invention. The GaAs crystal wafer is shown on its side. The epitaxial layers (not shown in this view) are …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
(orginal) A method for making a nonlinear optical crystal structure, comprising depositing contiguous alternating layers of gallium arsenide and aluminum gallium arsenide onto a substrate, wherein every layer of gallium arsenide is a first thickness greater than about 1 mm and every layer of aluminum gallium arsenide is a second, thinner, thickness. unknown
(orginal) The method for making a nonlinear optical crystal structure according to claim 3, wherein the substrate is made of gallium arsenide. unknown
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
multi-layer GaAs-AlGaAs nonlinear optical crystal structure
Materials described outside the worked examples.
gallium arsenide
GaAs
aluminum gallium arsenide
AlGaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–5 mm | — |
Thickness | 0.5–1 mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,619,356Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic side view of a layered structure for quasi-phase- matching according to the teachings of the present invention showing thin Al xGaixAs …
FIG. 2 is a schematic side view of a crystal structure according to the teachings of the present invention showing the input of a pump beam into the crystal …
FIG. 3 is a schematic side view of a crystal structure according to the teachings of the present invention showing pump beam propagation through the wafer and …
FIG. 4 shows one possible implementation of the new invention. The GaAs crystal wafer is shown on its side. The epitaxial layers (not shown in this view) are …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
(orginal) A method for making a nonlinear optical crystal structure, comprising depositing contiguous alternating layers of gallium arsenide and aluminum gallium arsenide onto a substrate, wherein every layer of gallium arsenide is a first thickness greater than about 1 mm and every layer of aluminum gallium arsenide is a second, thinner, thickness. unknown
(orginal) The method for making a nonlinear optical crystal structure according to claim 3, wherein the substrate is made of gallium arsenide. unknown
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
multi-layer GaAs-AlGaAs nonlinear optical crystal structure
Materials described outside the worked examples.
gallium arsenide
GaAs
aluminum gallium arsenide
AlGaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–5 mm | — |
Thickness | 0.5–1 mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,619,356Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic side view of a layered structure for quasi-phase- matching according to the teachings of the present invention showing thin Al xGaixAs …
FIG. 2 is a schematic side view of a crystal structure according to the teachings of the present invention showing the input of a pump beam into the crystal …
FIG. 3 is a schematic side view of a crystal structure according to the teachings of the present invention showing pump beam propagation through the wafer and …
FIG. 4 shows one possible implementation of the new invention. The GaAs crystal wafer is shown on its side. The epitaxial layers (not shown in this view) are …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
(orginal) A method for making a nonlinear optical crystal structure, comprising depositing contiguous alternating layers of gallium arsenide and aluminum gallium arsenide onto a substrate, wherein every layer of gallium arsenide is a first thickness greater than about 1 mm and every layer of aluminum gallium arsenide is a second, thinner, thickness. unknown
(orginal) The method for making a nonlinear optical crystal structure according to claim 3, wherein the substrate is made of gallium arsenide. unknown
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
multi-layer GaAs-AlGaAs nonlinear optical crystal structure
Materials described outside the worked examples.
gallium arsenide
GaAs
aluminum gallium arsenide
AlGaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–5 mm | — |
Thickness | 0.5–1 mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,619,356Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic side view of a layered structure for quasi-phase- matching according to the teachings of the present invention showing thin Al xGaixAs …
FIG. 2 is a schematic side view of a crystal structure according to the teachings of the present invention showing the input of a pump beam into the crystal …
FIG. 3 is a schematic side view of a crystal structure according to the teachings of the present invention showing pump beam propagation through the wafer and …
FIG. 4 shows one possible implementation of the new invention. The GaAs crystal wafer is shown on its side. The epitaxial layers (not shown in this view) are …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
(orginal) A method for making a nonlinear optical crystal structure, comprising depositing contiguous alternating layers of gallium arsenide and aluminum gallium arsenide onto a substrate, wherein every layer of gallium arsenide is a first thickness greater than about 1 mm and every layer of aluminum gallium arsenide is a second, thinner, thickness. unknown
(orginal) The method for making a nonlinear optical crystal structure according to claim 3, wherein the substrate is made of gallium arsenide. unknown
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
multi-layer GaAs-AlGaAs nonlinear optical crystal structure
Materials described outside the worked examples.
gallium arsenide
GaAs
aluminum gallium arsenide
AlGaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–5 mm | — |
Thickness | 0.5–1 mm |
Related documents with shared materials, methods, properties, or citations.
AlxGa₁-xAs
lithium niobate
LiNbO₃
| — |
Thickness | ≥ 1 mm | — |
AlxGa₁-xAs
lithium niobate
LiNbO₃
| — |
Thickness | ≥ 1 mm | — |
AlxGa₁-xAs
lithium niobate
LiNbO₃
| — |
Thickness | ≥ 1 mm | — |
AlxGa₁-xAs
lithium niobate
LiNbO₃
| — |
Thickness | ≥ 1 mm | — |