Patent
US 8,987,129GROUP-V DOPING OF GaAs-BASED LAYERS TO IMPROVE RADIATION TOLERANCE OF SOLAR CELLS
Joseph C. Boisvert
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,987,129Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart showing one method of making a photovoltaic cell comprising a GaAs layer incorporating a group-V element- containing material; 5
FIG. 2 is are schematic representations of a GaInP/GaAs/Ge photovoltaic cells showing the incorporation of GaAs-containing layers; and
FIG. 3 is a schematic representations of a (A I)GaInP/Ga(In)As/Ga l nAs metamorphic photovoltaic cell showing the incorporation of GaAs- containing layers.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for repairing radiation-induced damage to photovoltaic cells comprising the steps of: providing a photovoltaic cell made by sequentially growing semiconductor alloys that are lattice-matched to a Ge substrate; providing at least one subcell layer comprising a GaAs-based material having a lattice and a first current and voltage retention; providing at least one subcell layer material comprising an amount of group-V element, said group-V element subcell layer located proximate to the GaAs-based subcell layer; doping the GaAs-based subcell with a group-V element dopant; and providing an amount of the group-V element for migration into the GaAs-based material lattice substantially immediately after exposure of the photovoltaic cell to radiation.
The method of Claim 1, wherein the GaAs-based subcell incorporating the group- V element dopant achieves a second current and voltage retention after exposure to radiation that is greater than the first current and voltage retention of the GaAs-based subcell without the group-V element dopant.
The method of Claim 1, wherein the photovoltaic cell comprises a multi-junction cell.
The method of Claim 1, wherein the photovoltaic cell comprises a single junction cell.
The method of Claim 1, wherein the group-V element subcell comprises at least one group-V element.
The method of Claim 1, wherein the group-V-element subcell comprises nitrogen. RALEIGH 482657 In re: Joseph C. Boisvert, et al. App l. No.: 13/627,48 1 Pag e 3 of
The method of Claim 1, wherein the group-V element sub c ell comprises a band gap that is substantially equivalent to the GaAs-based sub c ell.
The method of Claim 1, wherein the semiconductor alloy is selected from the group consisting of: GaAs, GaInAs, GaAsSb, GaAsBi, GaInAsP, A l GaAs, GaInAsSb, Al GaInAs, A l InAs, A l GaAsSb, A l GaInAsSb, A l GaInAsP, and combinations thereof.
The method of Claim 1, further comprising the step of: passivating As vacancies in the GaAs-based subcells resulting from exposure to radiation with at least one group-V element during and substantially immediately after exposure to radiation.
A solar cell made according to the method of Claim 1. RALEIGH 482657 In re: Joseph C. Boisvert, et al. App l. No.: 13/627,48 1 Pag e 4 of 5 withdrawn
A spacecraft comprising a photovoltaic cell made according to the method of Claim 1. withdrawn
A method for repairing radiation damage in photovoltaic cells comprising GaAs- based subcells comprising the steps o f: providing a photovoltaic cell comprising at least one GaAs-based subcell comprising As vacancies upon exposure to radiation; providing a material comprising an amount of group-V element; and incorporating the group-V element-containing material into the GaAs subcell.
A vehicle comprising a photovoltaic cell made according to the method of withdrawn
A laser comprising the photovoltaic cell made according to the method of withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
radiation-tolerant photovoltaic cell
Materials described outside the worked examples.
GaAs-based subcell material
GaAs
group-V element dopant/subcell material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaAs bandgap at 300K | 1.42 eV | GaAs |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,987,129Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart showing one method of making a photovoltaic cell comprising a GaAs layer incorporating a group-V element- containing material; 5
FIG. 2 is are schematic representations of a GaInP/GaAs/Ge photovoltaic cells showing the incorporation of GaAs-containing layers; and
FIG. 3 is a schematic representations of a (A I)GaInP/Ga(In)As/Ga l nAs metamorphic photovoltaic cell showing the incorporation of GaAs- containing layers.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for repairing radiation-induced damage to photovoltaic cells comprising the steps of: providing a photovoltaic cell made by sequentially growing semiconductor alloys that are lattice-matched to a Ge substrate; providing at least one subcell layer comprising a GaAs-based material having a lattice and a first current and voltage retention; providing at least one subcell layer material comprising an amount of group-V element, said group-V element subcell layer located proximate to the GaAs-based subcell layer; doping the GaAs-based subcell with a group-V element dopant; and providing an amount of the group-V element for migration into the GaAs-based material lattice substantially immediately after exposure of the photovoltaic cell to radiation.
The method of Claim 1, wherein the GaAs-based subcell incorporating the group- V element dopant achieves a second current and voltage retention after exposure to radiation that is greater than the first current and voltage retention of the GaAs-based subcell without the group-V element dopant.
The method of Claim 1, wherein the photovoltaic cell comprises a multi-junction cell.
The method of Claim 1, wherein the photovoltaic cell comprises a single junction cell.
The method of Claim 1, wherein the group-V element subcell comprises at least one group-V element.
The method of Claim 1, wherein the group-V-element subcell comprises nitrogen. RALEIGH 482657 In re: Joseph C. Boisvert, et al. App l. No.: 13/627,48 1 Pag e 3 of
The method of Claim 1, wherein the group-V element sub c ell comprises a band gap that is substantially equivalent to the GaAs-based sub c ell.
The method of Claim 1, wherein the semiconductor alloy is selected from the group consisting of: GaAs, GaInAs, GaAsSb, GaAsBi, GaInAsP, A l GaAs, GaInAsSb, Al GaInAs, A l InAs, A l GaAsSb, A l GaInAsSb, A l GaInAsP, and combinations thereof.
The method of Claim 1, further comprising the step of: passivating As vacancies in the GaAs-based subcells resulting from exposure to radiation with at least one group-V element during and substantially immediately after exposure to radiation.
A solar cell made according to the method of Claim 1. RALEIGH 482657 In re: Joseph C. Boisvert, et al. App l. No.: 13/627,48 1 Pag e 4 of 5 withdrawn
A spacecraft comprising a photovoltaic cell made according to the method of Claim 1. withdrawn
A method for repairing radiation damage in photovoltaic cells comprising GaAs- based subcells comprising the steps o f: providing a photovoltaic cell comprising at least one GaAs-based subcell comprising As vacancies upon exposure to radiation; providing a material comprising an amount of group-V element; and incorporating the group-V element-containing material into the GaAs subcell.
A vehicle comprising a photovoltaic cell made according to the method of withdrawn
A laser comprising the photovoltaic cell made according to the method of withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
radiation-tolerant photovoltaic cell
Materials described outside the worked examples.
GaAs-based subcell material
GaAs
group-V element dopant/subcell material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaAs bandgap at 300K | 1.42 eV | GaAs |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,987,129Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart showing one method of making a photovoltaic cell comprising a GaAs layer incorporating a group-V element- containing material; 5
FIG. 2 is are schematic representations of a GaInP/GaAs/Ge photovoltaic cells showing the incorporation of GaAs-containing layers; and
FIG. 3 is a schematic representations of a (A I)GaInP/Ga(In)As/Ga l nAs metamorphic photovoltaic cell showing the incorporation of GaAs- containing layers.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for repairing radiation-induced damage to photovoltaic cells comprising the steps of: providing a photovoltaic cell made by sequentially growing semiconductor alloys that are lattice-matched to a Ge substrate; providing at least one subcell layer comprising a GaAs-based material having a lattice and a first current and voltage retention; providing at least one subcell layer material comprising an amount of group-V element, said group-V element subcell layer located proximate to the GaAs-based subcell layer; doping the GaAs-based subcell with a group-V element dopant; and providing an amount of the group-V element for migration into the GaAs-based material lattice substantially immediately after exposure of the photovoltaic cell to radiation.
The method of Claim 1, wherein the GaAs-based subcell incorporating the group- V element dopant achieves a second current and voltage retention after exposure to radiation that is greater than the first current and voltage retention of the GaAs-based subcell without the group-V element dopant.
The method of Claim 1, wherein the photovoltaic cell comprises a multi-junction cell.
The method of Claim 1, wherein the photovoltaic cell comprises a single junction cell.
The method of Claim 1, wherein the group-V element subcell comprises at least one group-V element.
The method of Claim 1, wherein the group-V-element subcell comprises nitrogen. RALEIGH 482657 In re: Joseph C. Boisvert, et al. App l. No.: 13/627,48 1 Pag e 3 of
The method of Claim 1, wherein the group-V element sub c ell comprises a band gap that is substantially equivalent to the GaAs-based sub c ell.
The method of Claim 1, wherein the semiconductor alloy is selected from the group consisting of: GaAs, GaInAs, GaAsSb, GaAsBi, GaInAsP, A l GaAs, GaInAsSb, Al GaInAs, A l InAs, A l GaAsSb, A l GaInAsSb, A l GaInAsP, and combinations thereof.
The method of Claim 1, further comprising the step of: passivating As vacancies in the GaAs-based subcells resulting from exposure to radiation with at least one group-V element during and substantially immediately after exposure to radiation.
A solar cell made according to the method of Claim 1. RALEIGH 482657 In re: Joseph C. Boisvert, et al. App l. No.: 13/627,48 1 Pag e 4 of 5 withdrawn
A spacecraft comprising a photovoltaic cell made according to the method of Claim 1. withdrawn
A method for repairing radiation damage in photovoltaic cells comprising GaAs- based subcells comprising the steps o f: providing a photovoltaic cell comprising at least one GaAs-based subcell comprising As vacancies upon exposure to radiation; providing a material comprising an amount of group-V element; and incorporating the group-V element-containing material into the GaAs subcell.
A vehicle comprising a photovoltaic cell made according to the method of withdrawn
A laser comprising the photovoltaic cell made according to the method of withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
radiation-tolerant photovoltaic cell
Materials described outside the worked examples.
GaAs-based subcell material
GaAs
group-V element dopant/subcell material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaAs bandgap at 300K | 1.42 eV | GaAs |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,987,129Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart showing one method of making a photovoltaic cell comprising a GaAs layer incorporating a group-V element- containing material; 5
FIG. 2 is are schematic representations of a GaInP/GaAs/Ge photovoltaic cells showing the incorporation of GaAs-containing layers; and
FIG. 3 is a schematic representations of a (A I)GaInP/Ga(In)As/Ga l nAs metamorphic photovoltaic cell showing the incorporation of GaAs- containing layers.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for repairing radiation-induced damage to photovoltaic cells comprising the steps of: providing a photovoltaic cell made by sequentially growing semiconductor alloys that are lattice-matched to a Ge substrate; providing at least one subcell layer comprising a GaAs-based material having a lattice and a first current and voltage retention; providing at least one subcell layer material comprising an amount of group-V element, said group-V element subcell layer located proximate to the GaAs-based subcell layer; doping the GaAs-based subcell with a group-V element dopant; and providing an amount of the group-V element for migration into the GaAs-based material lattice substantially immediately after exposure of the photovoltaic cell to radiation.
The method of Claim 1, wherein the GaAs-based subcell incorporating the group- V element dopant achieves a second current and voltage retention after exposure to radiation that is greater than the first current and voltage retention of the GaAs-based subcell without the group-V element dopant.
The method of Claim 1, wherein the photovoltaic cell comprises a multi-junction cell.
The method of Claim 1, wherein the photovoltaic cell comprises a single junction cell.
The method of Claim 1, wherein the group-V element subcell comprises at least one group-V element.
The method of Claim 1, wherein the group-V-element subcell comprises nitrogen. RALEIGH 482657 In re: Joseph C. Boisvert, et al. App l. No.: 13/627,48 1 Pag e 3 of
The method of Claim 1, wherein the group-V element sub c ell comprises a band gap that is substantially equivalent to the GaAs-based sub c ell.
The method of Claim 1, wherein the semiconductor alloy is selected from the group consisting of: GaAs, GaInAs, GaAsSb, GaAsBi, GaInAsP, A l GaAs, GaInAsSb, Al GaInAs, A l InAs, A l GaAsSb, A l GaInAsSb, A l GaInAsP, and combinations thereof.
The method of Claim 1, further comprising the step of: passivating As vacancies in the GaAs-based subcells resulting from exposure to radiation with at least one group-V element during and substantially immediately after exposure to radiation.
A solar cell made according to the method of Claim 1. RALEIGH 482657 In re: Joseph C. Boisvert, et al. App l. No.: 13/627,48 1 Pag e 4 of 5 withdrawn
A spacecraft comprising a photovoltaic cell made according to the method of Claim 1. withdrawn
A method for repairing radiation damage in photovoltaic cells comprising GaAs- based subcells comprising the steps o f: providing a photovoltaic cell comprising at least one GaAs-based subcell comprising As vacancies upon exposure to radiation; providing a material comprising an amount of group-V element; and incorporating the group-V element-containing material into the GaAs subcell.
A vehicle comprising a photovoltaic cell made according to the method of withdrawn
A laser comprising the photovoltaic cell made according to the method of withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
radiation-tolerant photovoltaic cell
Materials described outside the worked examples.
GaAs-based subcell material
GaAs
group-V element dopant/subcell material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaAs bandgap at 300K | 1.42 eV | GaAs |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Ge
nitrogen
N
GaInAs
GaAsSb
GaAsBi
GaInAsP
AlGaAs
GaInAsSb
AlGaInAs
AlInAs
AlGaAsSb
AlGaInAsSb
AlGaInAsP
GaInP
dimethyl hydrazine (symmetric or nonsymmetric)
trimethylhydrazine
nitrogen trifluoride
NF₃
| 900–1700 nm |
| — |
Thickness | 650–900 nm | — |
Thickness | 300–650 nm | — |
Thickness | 900–1300 nm | — |
Ge
nitrogen
N
GaInAs
GaAsSb
GaAsBi
GaInAsP
AlGaAs
GaInAsSb
AlGaInAs
AlInAs
AlGaAsSb
AlGaInAsSb
AlGaInAsP
GaInP
dimethyl hydrazine (symmetric or nonsymmetric)
trimethylhydrazine
nitrogen trifluoride
NF₃
| 900–1700 nm |
| — |
Thickness | 650–900 nm | — |
Thickness | 300–650 nm | — |
Thickness | 900–1300 nm | — |
Ge
nitrogen
N
GaInAs
GaAsSb
GaAsBi
GaInAsP
AlGaAs
GaInAsSb
AlGaInAs
AlInAs
AlGaAsSb
AlGaInAsSb
AlGaInAsP
GaInP
dimethyl hydrazine (symmetric or nonsymmetric)
trimethylhydrazine
nitrogen trifluoride
NF₃
| 900–1700 nm |
| — |
Thickness | 650–900 nm | — |
Thickness | 300–650 nm | — |
Thickness | 900–1300 nm | — |
Ge
nitrogen
N
GaInAs
GaAsSb
GaAsBi
GaInAsP
AlGaAs
GaInAsSb
AlGaInAs
AlInAs
AlGaAsSb
AlGaInAsSb
AlGaInAsP
GaInP
dimethyl hydrazine (symmetric or nonsymmetric)
trimethylhydrazine
nitrogen trifluoride
NF₃
| 900–1700 nm |
| — |
Thickness | 650–900 nm | — |
Thickness | 300–650 nm | — |
Thickness | 900–1300 nm | — |