Abstract

Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor, giving them a quantized energy spectrum. The simplest spin qubit is a single electron spin located in a quantum dot, but many additional varieties have been developed, some containing multiple spins in multiple quantum dots, each of which has different benefits and drawbacks. While these spins act as simple quantum systems in many ways, they also experience complex effects due to their semiconductor environment. They can be controlled by both magnetic and electric fields depending on their configuration and are therefore dephased by magnetic and electric field noise, with different types of spin qubits having different control mechanisms and noise susceptibilities. While initial experiments were primarily performed in gallium arsenide (GaAs) based materials, silicon qubits have developed substantially and research on qubits in metal-oxide-semiconductor (Si-MOS), silicon/silicon germanium (Si/SiGe) heterostructures, and donors in silicon is also being pursued. An increasing number of spin qubit varieties have attained error rates that are low enough to be compatible with quantum error correction for single-qubit gates and two-qubit gates have been performed in several with success rates, or fidelities, of 90-95%.

Abstract

Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor, giving them a quantized energy spectrum. The simplest spin qubit is a single electron spin located in a quantum dot, but many additional varieties have been developed, some containing multiple spins in multiple quantum dots, each of which has different benefits and drawbacks. While these spins act as simple quantum systems in many ways, they also experience complex effects due to their semiconductor environment. They can be controlled by both magnetic and electric fields depending on their configuration and are therefore dephased by magnetic and electric field noise, with different types of spin qubits having different control mechanisms and noise susceptibilities. While initial experiments were primarily performed in gallium arsenide (GaAs) based materials, silicon qubits have developed substantially and research on qubits in metal-oxide-semiconductor (Si-MOS), silicon/silicon germanium (Si/SiGe) heterostructures, and donors in silicon is also being pursued. An increasing number of spin qubit varieties have attained error rates that are low enough to be compatible with quantum error correction for single-qubit gates and two-qubit gates have been performed in several with success rates, or fidelities, of 90-95%.

Abstract

Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor, giving them a quantized energy spectrum. The simplest spin qubit is a single electron spin located in a quantum dot, but many additional varieties have been developed, some containing multiple spins in multiple quantum dots, each of which has different benefits and drawbacks. While these spins act as simple quantum systems in many ways, they also experience complex effects due to their semiconductor environment. They can be controlled by both magnetic and electric fields depending on their configuration and are therefore dephased by magnetic and electric field noise, with different types of spin qubits having different control mechanisms and noise susceptibilities. While initial experiments were primarily performed in gallium arsenide (GaAs) based materials, silicon qubits have developed substantially and research on qubits in metal-oxide-semiconductor (Si-MOS), silicon/silicon germanium (Si/SiGe) heterostructures, and donors in silicon is also being pursued. An increasing number of spin qubit varieties have attained error rates that are low enough to be compatible with quantum error correction for single-qubit gates and two-qubit gates have been performed in several with success rates, or fidelities, of 90-95%.

Abstract

Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor, giving them a quantized energy spectrum. The simplest spin qubit is a single electron spin located in a quantum dot, but many additional varieties have been developed, some containing multiple spins in multiple quantum dots, each of which has different benefits and drawbacks. While these spins act as simple quantum systems in many ways, they also experience complex effects due to their semiconductor environment. They can be controlled by both magnetic and electric fields depending on their configuration and are therefore dephased by magnetic and electric field noise, with different types of spin qubits having different control mechanisms and noise susceptibilities. While initial experiments were primarily performed in gallium arsenide (GaAs) based materials, silicon qubits have developed substantially and research on qubits in metal-oxide-semiconductor (Si-MOS), silicon/silicon germanium (Si/SiGe) heterostructures, and donors in silicon is also being pursued. An increasing number of spin qubit varieties have attained error rates that are low enough to be compatible with quantum error correction for single-qubit gates and two-qubit gates have been performed in several with success rates, or fidelities, of 90-95%.