Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Yi Huang; B. I. Shklovskii; M. A. Zudov

doi:10.1103/PhysRevMaterials.6.L061001

Paper details

Research paper

Theoretical

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Yi Huang, B. I. Shklovskii, M. A. Zudov

arXiv preprint·2022·10.1103/PhysRevMaterials.6.L061001·arXiv:2205.00365

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.88As barriers, modeled as a 2DEG system for mobility and quantum mobility calculations.

18 properties

SimulatedGaAsStudied MaterialAl0.12Ga0.88AsStudied Material

Materials

GaAs

Studied Material

Also known as

GaAs quantum well

studied material

Al0.12Ga0.88As

Studied Material

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Mobility Power Law Exponent	transport mobility exponent	0.85	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Power Law Exponent	quantum mobility exponent	0.85	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility	transport mobility	3.510⁷ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility	record mobility cited from recent MBE sample	4.410⁷ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Background Impurity Concentration	N₁	140000000000000cm⁻³	GaAs	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Background Impurity Concentration	N₁ = N₂	5000000000000cm⁻³	GaAs	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Background Impurity Concentration	N₂ = N₁	5000000000000cm⁻³	GaAs	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Interface Roughness Height	Delta	2.83angstrom	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Interface Roughness Lateral Size	Lambda	80angstrom	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility	interface-roughness-limited mobility near crossover	4.710² n_e^-2	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Power Law Exponent	transport mobility exponent	1.12	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Power Law Exponent	quantum mobility exponent	0.87	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	transport mobility prefactor	38.310⁶ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	transport mobility prefactor	43.110⁶ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	quantum mobility prefactor	1.4n_e⁰.85	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	quantum mobility prefactor	13.3n_e⁰.87	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Remote Donor Scattering Mobility	mu_RI	7.710⁶ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Alloy Disorder Mobility Increase Factor	mobility increase factor on raising x from 0.12 to 0.24	2.4	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Xrd Lattice Constant A	lattice constant a	5.67Å	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Mobility Power Law Exponent	transport mobility exponent	0.85	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Power Law Exponent	quantum mobility exponent	0.85	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility	transport mobility	3.510⁷ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility	record mobility cited from recent MBE sample	4.410⁷ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Background Impurity Concentration	N₁	140000000000000cm⁻³	GaAs	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Background Impurity Concentration	N₁ = N₂	5000000000000cm⁻³	GaAs	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Background Impurity Concentration	N₂ = N₁	5000000000000cm⁻³	GaAs	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Interface Roughness Height	Delta	2.83angstrom	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Interface Roughness Lateral Size	Lambda	80angstrom	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility	interface-roughness-limited mobility near crossover	4.710² n_e^-2	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Power Law Exponent	transport mobility exponent	1.12	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Power Law Exponent	quantum mobility exponent	0.87	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	transport mobility prefactor	38.310⁶ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	transport mobility prefactor	43.110⁶ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	quantum mobility prefactor	1.4n_e⁰.85	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	quantum mobility prefactor	13.3n_e⁰.87	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Remote Donor Scattering Mobility	mu_RI	7.710⁶ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Alloy Disorder Mobility Increase Factor	mobility increase factor on raising x from 0.12 to 0.24	2.4	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Xrd Lattice Constant A	lattice constant a	5.67Å	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Mobility Power Law Exponent	transport mobility exponent	0.85	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Power Law Exponent	quantum mobility exponent	0.85	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility	transport mobility	3.510⁷ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility	record mobility cited from recent MBE sample	4.410⁷ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Background Impurity Concentration	N₁	140000000000000cm⁻³	GaAs	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Background Impurity Concentration	N₁ = N₂	5000000000000cm⁻³	GaAs	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Background Impurity Concentration	N₂ = N₁	5000000000000cm⁻³	GaAs	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Interface Roughness Height	Delta	2.83angstrom	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Interface Roughness Lateral Size	Lambda	80angstrom	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility	interface-roughness-limited mobility near crossover	4.710² n_e^-2	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Power Law Exponent	transport mobility exponent	1.12	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Power Law Exponent	quantum mobility exponent	0.87	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	transport mobility prefactor	38.310⁶ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	transport mobility prefactor	43.110⁶ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	quantum mobility prefactor	1.4n_e⁰.85	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	quantum mobility prefactor	13.3n_e⁰.87	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Remote Donor Scattering Mobility	mu_RI	7.710⁶ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Alloy Disorder Mobility Increase Factor	mobility increase factor on raising x from 0.12 to 0.24	2.4	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Xrd Lattice Constant A	lattice constant a	5.67Å	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Mobility Power Law Exponent	transport mobility exponent	0.85	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Power Law Exponent	quantum mobility exponent	0.85	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility	transport mobility	3.510⁷ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility	record mobility cited from recent MBE sample	4.410⁷ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Background Impurity Concentration	N₁	140000000000000cm⁻³	GaAs	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Background Impurity Concentration	N₁ = N₂	5000000000000cm⁻³	GaAs	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Background Impurity Concentration	N₂ = N₁	5000000000000cm⁻³	GaAs	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Interface Roughness Height	Delta	2.83angstrom	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Interface Roughness Lateral Size	Lambda	80angstrom	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility	interface-roughness-limited mobility near crossover	4.710² n_e^-2	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Power Law Exponent	transport mobility exponent	1.12	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Power Law Exponent	quantum mobility exponent	0.87	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	transport mobility prefactor	38.310⁶ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	transport mobility prefactor	43.110⁶ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	quantum mobility prefactor	1.4n_e⁰.85	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Mobility Prefactor	quantum mobility prefactor	13.3n_e⁰.87	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Remote Donor Scattering Mobility	mu_RI	7.710⁶ cm²/Vs	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Alloy Disorder Mobility Increase Factor	mobility increase factor on raising x from 0.12 to 0.24	2.4	GaAs Al0.12Ga0.88As	State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.8		—
Xrd Lattice Constant A	lattice constant a	5.67Å	—	—	—	—

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Samples

State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.88As barriers, modeled as a 2DEG system for mobility and quantum mobility calculations.

Materials

Why these are connected

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Samples

State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.88As barriers, modeled as a 2DEG system for mobility and quantum mobility calculations.

Materials

Why these are connected

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Samples

State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.88As barriers, modeled as a 2DEG system for mobility and quantum mobility calculations.

Materials

Why these are connected

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Samples

State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.88As barriers, modeled as a 2DEG system for mobility and quantum mobility calculations.

Materials

Why these are connected

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Samples

State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.88As barriers, modeled as a 2DEG system for mobility and quantum mobility calculations.

Materials

Why these are connected

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Samples

State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.88As barriers, modeled as a 2DEG system for mobility and quantum mobility calculations.

Materials

Why these are connected

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Samples

State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.88As barriers, modeled as a 2DEG system for mobility and quantum mobility calculations.

Materials

Why these are connected

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Samples

State-of-the-art GaAs quantum well surrounded by Al0.12Ga0.88As barriers, modeled as a 2DEG system for mobility and quantum mobility calculations.

Materials

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations