Research paperExperimental CharacterizationTheoreticalMagnetotransport Spectroscopy of Strongly Rashba-Split Hole Subbands Reveals Many-Body InteractionsF. Sfigakis, N. A. Cockton, M. Korkusinski, S. R. Harrigan et al.arXiv·2026·arXiv:2602.12440AbstractWe report the results of magnetotransport experiments carried out on low-disorder 2D hole gases (2DHG) in the strongly correlated liquid regime, hosted in dopant-free (100) GaAs/AlGaAs single heterojunctions. Over a wide range of 2DHG densities, Fourier analysis of low-field Shubnikov–de Haas oscillations reveals two spin-orbit-split heavy-hole subbands with distinct effective masses contributing to transport. Quantitative comparison with numerical calculations based on the Luttinger model reveals that both effective masses are enhanced by a common factor (≈2.3), which we attribute to many-body interactions.Read more
Dopant-free (100) GaAs/Al0.3Ga0.7As single heterojunction gated Hall-bar HIGFET device, sample J.1 characterization2 properties4 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialSiO₂Substrate / DielectricExpand
Dopant-free (100) GaAs/Al0.3Ga0.7As single heterojunction gated Hall-bar HIGFET device, sample H.1 characterization2 properties4 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialSiO₂Substrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalMagnetotransport Spectroscopy of Strongly Rashba-Split Hole Subbands Reveals Many-Body InteractionsF. Sfigakis, N. A. Cockton, M. Korkusinski, S. R. Harrigan et al.arXiv·2026·arXiv:2602.12440AbstractWe report the results of magnetotransport experiments carried out on low-disorder 2D hole gases (2DHG) in the strongly correlated liquid regime, hosted in dopant-free (100) GaAs/AlGaAs single heterojunctions. Over a wide range of 2DHG densities, Fourier analysis of low-field Shubnikov–de Haas oscillations reveals two spin-orbit-split heavy-hole subbands with distinct effective masses contributing to transport. Quantitative comparison with numerical calculations based on the Luttinger model reveals that both effective masses are enhanced by a common factor (≈2.3), which we attribute to many-body interactions.Read more
Dopant-free (100) GaAs/Al0.3Ga0.7As single heterojunction gated Hall-bar HIGFET device, sample J.1 characterization2 properties4 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialSiO₂Substrate / DielectricExpand
Dopant-free (100) GaAs/Al0.3Ga0.7As single heterojunction gated Hall-bar HIGFET device, sample H.1 characterization2 properties4 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialSiO₂Substrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalMagnetotransport Spectroscopy of Strongly Rashba-Split Hole Subbands Reveals Many-Body InteractionsF. Sfigakis, N. A. Cockton, M. Korkusinski, S. R. Harrigan et al.arXiv·2026·arXiv:2602.12440AbstractWe report the results of magnetotransport experiments carried out on low-disorder 2D hole gases (2DHG) in the strongly correlated liquid regime, hosted in dopant-free (100) GaAs/AlGaAs single heterojunctions. Over a wide range of 2DHG densities, Fourier analysis of low-field Shubnikov–de Haas oscillations reveals two spin-orbit-split heavy-hole subbands with distinct effective masses contributing to transport. Quantitative comparison with numerical calculations based on the Luttinger model reveals that both effective masses are enhanced by a common factor (≈2.3), which we attribute to many-body interactions.Read more
Dopant-free (100) GaAs/Al0.3Ga0.7As single heterojunction gated Hall-bar HIGFET device, sample J.1 characterization2 properties4 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialSiO₂Substrate / DielectricExpand
Dopant-free (100) GaAs/Al0.3Ga0.7As single heterojunction gated Hall-bar HIGFET device, sample H.1 characterization2 properties4 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialSiO₂Substrate / DielectricExpand
Research paperExperimental CharacterizationTheoreticalMagnetotransport Spectroscopy of Strongly Rashba-Split Hole Subbands Reveals Many-Body InteractionsF. Sfigakis, N. A. Cockton, M. Korkusinski, S. R. Harrigan et al.arXiv·2026·arXiv:2602.12440AbstractWe report the results of magnetotransport experiments carried out on low-disorder 2D hole gases (2DHG) in the strongly correlated liquid regime, hosted in dopant-free (100) GaAs/AlGaAs single heterojunctions. Over a wide range of 2DHG densities, Fourier analysis of low-field Shubnikov–de Haas oscillations reveals two spin-orbit-split heavy-hole subbands with distinct effective masses contributing to transport. Quantitative comparison with numerical calculations based on the Luttinger model reveals that both effective masses are enhanced by a common factor (≈2.3), which we attribute to many-body interactions.Read more
Dopant-free (100) GaAs/Al0.3Ga0.7As single heterojunction gated Hall-bar HIGFET device, sample J.1 characterization2 properties4 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialSiO₂Substrate / DielectricExpand
Dopant-free (100) GaAs/Al0.3Ga0.7As single heterojunction gated Hall-bar HIGFET device, sample H.1 characterization2 properties4 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialSiO₂Substrate / DielectricExpand