Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Carrier Density | electron density | 1.71×10^11 (before illumination) / 3.39×10^11 (after illumination)cm⁻² | — | |||
| Fet Mobility | mobility | 1.59×10^6 (before illumination) / 3.82×10^6 (after illumination)cm²/Vs | — | |||
| Carrier Density | electron density | 2.08×10^11 (before illumination) / 3.06×10^11 (after illumination)cm⁻² | — | |||
| Fet Mobility | mobility | 3.06×10^6 (before illumination) / 5.15×10^6 (after illumination)cm²/Vs | — | |||
| Substrate Depth | 2DEG depth below surface | 90nm | Chip 1 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 2 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 3 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 4 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 5 GaAs/AlGaAs heterostructure with multiplexed split-ga | — |
Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Carrier Density | electron density | 1.71×10^11 (before illumination) / 3.39×10^11 (after illumination)cm⁻² | — | |||
| Fet Mobility | mobility | 1.59×10^6 (before illumination) / 3.82×10^6 (after illumination)cm²/Vs | — | |||
| Carrier Density | electron density | 2.08×10^11 (before illumination) / 3.06×10^11 (after illumination)cm⁻² | — | |||
| Fet Mobility | mobility | 3.06×10^6 (before illumination) / 5.15×10^6 (after illumination)cm²/Vs | — | |||
| Substrate Depth | 2DEG depth below surface | 90nm | Chip 1 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 2 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 3 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 4 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 5 GaAs/AlGaAs heterostructure with multiplexed split-ga | — |
Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Carrier Density | electron density | 1.71×10^11 (before illumination) / 3.39×10^11 (after illumination)cm⁻² | — | |||
| Fet Mobility | mobility | 1.59×10^6 (before illumination) / 3.82×10^6 (after illumination)cm²/Vs | — | |||
| Carrier Density | electron density | 2.08×10^11 (before illumination) / 3.06×10^11 (after illumination)cm⁻² | — | |||
| Fet Mobility | mobility | 3.06×10^6 (before illumination) / 5.15×10^6 (after illumination)cm²/Vs | — | |||
| Substrate Depth | 2DEG depth below surface | 90nm | Chip 1 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 2 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 3 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 4 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 5 GaAs/AlGaAs heterostructure with multiplexed split-ga | — |
Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Carrier Density | electron density | 1.71×10^11 (before illumination) / 3.39×10^11 (after illumination)cm⁻² | — | |||
| Fet Mobility | mobility | 1.59×10^6 (before illumination) / 3.82×10^6 (after illumination)cm²/Vs | — | |||
| Carrier Density | electron density | 2.08×10^11 (before illumination) / 3.06×10^11 (after illumination)cm⁻² | — | |||
| Fet Mobility | mobility | 3.06×10^6 (before illumination) / 5.15×10^6 (after illumination)cm²/Vs | — | |||
| Substrate Depth | 2DEG depth below surface | 90nm | Chip 1 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 2 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 3 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 4 GaAs/AlGaAs heterostructure with multiplexed split-gaChip 5 GaAs/AlGaAs heterostructure with multiplexed split-ga | — |
Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings