Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)

T. J. Martz-Oberlander; B. Bulgaru; Z. Berkson-Korenberg; Q. Hawkins; K.W. West; K.W. Baldwin; A. Gupta; L. N. Pfeiffer; G. Gervais

doi:10.48550/arXiv.2601.15418

Paper

Atlas literature

Research paper

Experimental Characterization

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)

T. J. Martz-Oberlander, B. Bulgaru, Z. Berkson-Korenberg, Q. Hawkins et al.

arXiv preprint·2026·arXiv:2601.15418

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Flip-chip device using FPI gate assembly mounted on GaAs/AlGaAs wafer #P₅-4-21.1.

3 preparations2 characterizations3 properties3 figures

ExperimentalGaAs/AlGaAs quantum well 2DEGStudied Material

Flip-chip device using TRP gate assembly mounted on GaAs/AlGaAs wafer #3-11-10.2.

3 preparations2 characterizations2 properties2 figures

ExperimentalGaAs/AlGaAs quantum well 2DEGStudied Material

Second TRP device based on a different piece from wafer #3-11-10.2 with 40 nm Al₂O₃ capping layer deposited by ALD.

4 preparations2 characterizations1 property2 figures

ExperimentalGaAs/AlGaAs quantum well 2DEGStudied Material

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs) | Matter42 Literature

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)

Samples

Flip-chip device using FPI gate assembly mounted on GaAs/AlGaAs wafer #P₅-4-21.1.

Flip-chip device using TRP gate assembly mounted on GaAs/AlGaAs wafer #3-11-10.2.

Second TRP device based on a different piece from wafer #3-11-10.2 with 40 nm Al₂O₃ capping layer deposited by ALD.

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)

Samples

Flip-chip device using FPI gate assembly mounted on GaAs/AlGaAs wafer #P₅-4-21.1.

Flip-chip device using TRP gate assembly mounted on GaAs/AlGaAs wafer #3-11-10.2.

Second TRP device based on a different piece from wafer #3-11-10.2 with 40 nm Al₂O₃ capping layer deposited by ALD.

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)

Samples

Flip-chip device using FPI gate assembly mounted on GaAs/AlGaAs wafer #P₅-4-21.1.

Flip-chip device using TRP gate assembly mounted on GaAs/AlGaAs wafer #3-11-10.2.

Second TRP device based on a different piece from wafer #3-11-10.2 with 40 nm Al₂O₃ capping layer deposited by ALD.

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)

Samples

Flip-chip device using FPI gate assembly mounted on GaAs/AlGaAs wafer #P₅-4-21.1.

Flip-chip device using TRP gate assembly mounted on GaAs/AlGaAs wafer #3-11-10.2.

Second TRP device based on a different piece from wafer #3-11-10.2 with 40 nm Al₂O₃ capping layer deposited by ALD.

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)

Samples

Flip-chip device using FPI gate assembly mounted on GaAs/AlGaAs wafer #P₅-4-21.1.

Flip-chip device using TRP gate assembly mounted on GaAs/AlGaAs wafer #3-11-10.2.

Second TRP device based on a different piece from wafer #3-11-10.2 with 40 nm Al₂O₃ capping layer deposited by ALD.

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)

Samples

Flip-chip device using FPI gate assembly mounted on GaAs/AlGaAs wafer #P₅-4-21.1.

Flip-chip device using TRP gate assembly mounted on GaAs/AlGaAs wafer #3-11-10.2.

Second TRP device based on a different piece from wafer #3-11-10.2 with 40 nm Al₂O₃ capping layer deposited by ALD.

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)

Samples

Flip-chip device using FPI gate assembly mounted on GaAs/AlGaAs wafer #P₅-4-21.1.

Flip-chip device using TRP gate assembly mounted on GaAs/AlGaAs wafer #3-11-10.2.

Second TRP device based on a different piece from wafer #3-11-10.2 with 40 nm Al₂O₃ capping layer deposited by ALD.

Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)

Samples

Flip-chip device using FPI gate assembly mounted on GaAs/AlGaAs wafer #P₅-4-21.1.

Flip-chip device using TRP gate assembly mounted on GaAs/AlGaAs wafer #3-11-10.2.

Second TRP device based on a different piece from wafer #3-11-10.2 with 40 nm Al₂O₃ capping layer deposited by ALD.

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